HR1A4A: 产品描述Power Bipolar Transistor, 1A I(C), 60V V(BR)CEO, 1-Element, PNP, Silicon, Plastic/Epoxy, 3 Pin, POWER, PLASTIC, SC-62, 3 PIN; 产品类别分立半导体晶体管; 文件大小270KB，共6页; 制造商NEC(日电)

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HR1A4A概述

Power Bipolar Transistor, 1A I(C), 60V V(BR)CEO, 1-Element, PNP, Silicon, Plastic/Epoxy, 3 Pin, POWER, PLASTIC, SC-62, 3 PIN

HR1A4A规格参数

参数名称	属性值
厂商名称	NEC(日电)
包装说明	POWER, PLASTIC, SC-62, 3 PIN
Reach Compliance Code	unknown
其他特性	BUILT-IN BIAS RESISTOR
外壳连接	COLLECTOR
最大集电极电流 (IC)	1 A
集电极-发射极最大电压	60 V
配置	SINGLE WITH BUILT-IN RESISTOR
最小直流电流增益 (hFE)	50
JESD-30 代码	R-PSSO-F3
元件数量	1
端子数量	3
最高工作温度	150 °C
封装主体材料	PLASTIC/EPOXY
封装形状	RECTANGULAR
封装形式	SMALL OUTLINE
极性/信道类型	PNP
功耗环境最大值	2 W
认证状态	Not Qualified
表面贴装	YES
端子形式	FLAT
端子位置	SINGLE
晶体管应用	SWITCHING
晶体管元件材料	SILICON

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DATA SHEET

COMPOUND TRANSISTOR

HR1 SERIES

on-chip resistor PNP silicon epitaxial transistor

For mid-speed switching

FEATURES

• Up to 2A high current drives such as IC outputs and actuators available

• On-chip bias resistor

• Low power consumption during drive

PACKAGE DRAWING (UNIT: mm)

HR1 SERIES LISTS

Products

HR1A3M

HR1F3P

HR1L3N

HR1A4M

HR1L2Q

HR1F2Q

HR1A4A

Marking

(kΩ)

1.0

2.2

4.7

0.47

0.22

−

(kΩ)

1.0

4.7

2.2

ABSOLUTE MAXIMUM RATINGS (T

= 25°C)

Parameter

Collector to base voltage

Collector to emitter voltage

Emitter to base voltage

Collector current (DC)

Collector current (Pulse)

Base current (DC)

Total power dissipation

Junction temperature

Storage temperature

Symbol

CBO

CEO

EBO

C(DC)

C(pulse)

Note1

Ratings

−60

−10

−1.0

−2.0

−0.02

2.0

150

−55

to +150

Unit

°C

B(DC)

Note2

stg

Notes 1.

≤

10 ms, duty cycle

≤

50 %

When 0.7 mm

16 cm

ceramic board is used

The information in this document is subject to change without notice. Before using this document, please

confirm that this is the latest version.

Not all products and/or types are available in every country. Please check with an NEC Electronics

sales representative for availability and additional information.

Document No. D16184EJ4V0DS00 (4th edition)

Date Published August 2006 NS CP(K)

Printed in Japan

The mark <R> shows major revised points.

The revised points can be easily searched by copying an "<R>" in the PDF file and specifying it in the "Find what:" field.

2006

HR1A4A相似产品对比

	HR1A4A	HR1L2Q	HR1A3M	HR1A4M	HR1F3P	HR1L3N	HR1F2Q
描述	Power Bipolar Transistor, 1A I(C), 60V V(BR)CEO, 1-Element, PNP, Silicon, Plastic/Epoxy, 3 Pin, POWER, PLASTIC, SC-62, 3 PIN	Power Bipolar Transistor, 1A I(C), 60V V(BR)CEO, 1-Element, PNP, Silicon, Plastic/Epoxy, 3 Pin, POWER, PLASTIC, SC-62, 3 PIN	Power Bipolar Transistor, 1A I(C), 60V V(BR)CEO, 1-Element, PNP, Silicon, Plastic/Epoxy, 3 Pin, POWER, PLASTIC, SC-62, 3 PIN	Power Bipolar Transistor, 1A I(C), 60V V(BR)CEO, 1-Element, PNP, Silicon, Plastic/Epoxy, 3 Pin, POWER, PLASTIC, SC-62, 3 PIN	Power Bipolar Transistor, 1A I(C), 60V V(BR)CEO, 1-Element, PNP, Silicon, Plastic/Epoxy, 3 Pin, POWER, PLASTIC, SC-62, 3 PIN	Power Bipolar Transistor, 1A I(C), 60V V(BR)CEO, 1-Element, PNP, Silicon, Plastic/Epoxy, 3 Pin, POWER, PLASTIC, SC-62, 3 PIN	Power Bipolar Transistor, 1A I(C), 60V V(BR)CEO, 1-Element, PNP, Silicon, Plastic/Epoxy, 3 Pin, POWER, PLASTIC, SC-62, 3 PIN
包装说明	POWER, PLASTIC, SC-62, 3 PIN	POWER, PLASTIC, SC-62, 3 PIN	POWER, PLASTIC, SC-62, 3 PIN	POWER, PLASTIC, SC-62, 3 PIN	POWER, PLASTIC, SC-62, 3 PIN	POWER, PLASTIC, SC-62, 3 PIN	POWER, PLASTIC, SC-62, 3 PIN
Reach Compliance Code	unknown	unknown	unknown	unknown	unknown	unknown	unknown
其他特性	BUILT-IN BIAS RESISTOR	BUILT-IN BIAS RESISTOR RATIO IS 10	BUILT-IN BIAS RESISTOR RATIO IS 1	BUILT-IN BIAS RESISTOR RATIO IS 1	BUILT-IN BIAS RESISTOR RATIO IS 4.5455	BUILT-IN BIAS RESISTOR RATIO IS 2.1277	BUILT-IN BIAS RESISTOR RATIO IS 10
外壳连接	COLLECTOR	COLLECTOR	COLLECTOR	COLLECTOR	COLLECTOR	COLLECTOR	COLLECTOR
最大集电极电流 (IC)	1 A	1 A	1 A	1 A	1 A	1 A	1 A
集电极-发射极最大电压	60 V	60 V	60 V	60 V	60 V	60 V	60 V
配置	SINGLE WITH BUILT-IN RESISTOR	SINGLE WITH BUILT-IN RESISTOR	SINGLE WITH BUILT-IN RESISTOR	SINGLE WITH BUILT-IN RESISTOR	SINGLE WITH BUILT-IN RESISTOR	SINGLE WITH BUILT-IN RESISTOR	SINGLE WITH BUILT-IN RESISTOR
最小直流电流增益 (hFE)	50	50	50	50	50	50	50
JESD-30 代码	R-PSSO-F3	R-PSSO-F3	R-PSSO-F3	R-PSSO-F3	R-PSSO-F3	R-PSSO-F3	R-PSSO-F3
元件数量	1	1	1	1	1	1	1
端子数量	3	3	3	3	3	3	3
最高工作温度	150 °C	150 °C	150 °C	150 °C	150 °C	150 °C	150 °C
封装主体材料	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY
封装形状	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR
封装形式	SMALL OUTLINE	SMALL OUTLINE	SMALL OUTLINE	SMALL OUTLINE	SMALL OUTLINE	SMALL OUTLINE	SMALL OUTLINE
极性/信道类型	PNP	PNP	PNP	PNP	PNP	PNP	PNP
功耗环境最大值	2 W	2 W	2 W	2 W	2 W	2 W	2 W
认证状态	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified
表面贴装	YES	YES	YES	YES	YES	YES	YES
端子形式	FLAT	FLAT	FLAT	FLAT	FLAT	FLAT	FLAT
端子位置	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE
晶体管应用	SWITCHING	SWITCHING	SWITCHING	SWITCHING	SWITCHING	SWITCHING	SWITCHING
晶体管元件材料	SILICON	SILICON	SILICON	SILICON	SILICON	SILICON	SILICON
厂商名称	NEC(日电)	-	-	NEC(日电)	NEC(日电)	NEC(日电)	NEC(日电)

HR1A4A

HR1A4A概述

HR1A4A规格参数

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