Datasheet> 器件分类 > 分立半导体> 晶体管> HN2E02F-GR

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HN2E02F-GR: 产品描述TRANSISTOR 150 mA, 50 V, NPN, Si, SMALL SIGNAL TRANSISTOR, 2-3N1D, SM6, 6 PIN, BIP General Purpose Small Signal; 产品类别分立半导体晶体管; 文件大小256KB，共6页; 制造商Toshiba(东芝); 官网地址http://toshiba-semicon-storage.com/

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HN2E02F-GR概述

TRANSISTOR 150 mA, 50 V, NPN, Si, SMALL SIGNAL TRANSISTOR, 2-3N1D, SM6, 6 PIN, BIP General Purpose Small Signal

HN2E02F-GR规格参数

参数名称	属性值
厂商名称	Toshiba(东芝)
包装说明	2-3N1D, SM6, 6 PIN
针数	6
Reach Compliance Code	unknown
ECCN代码	EAR99
最大集电极电流 (IC)	0.15 A
集电极-发射极最大电压	50 V
配置	SINGLE WITH BUILT-IN DIODE
最小直流电流增益 (hFE)	200
JESD-30 代码	R-PDSO-G6
元件数量	1
端子数量	6
最高工作温度	125 °C
封装主体材料	PLASTIC/EPOXY
封装形状	RECTANGULAR
封装形式	SMALL OUTLINE
极性/信道类型	NPN
最大功率耗散 (Abs)	0.3 W
认证状态	Not Qualified
表面贴装	YES
端子形式	GULL WING
端子位置	DUAL
晶体管应用	SWITCHING
晶体管元件材料	SILICON
标称过渡频率 (fT)	60 MHz

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HN2E02F

TOSHIBA MULTI CHIP DISCRETE DEVICE

HN2E02F

Super High Speed Switching Application

Audio Frequency Amplifier Application

AM Amplifier Application

Low Forward Voltage Drop

Fast Reverse Recovery Time

Low Total Capacitance

: V

F(3

)=0.98V(typ.)

: t

=1.6ns(typ.)

: C

=0.5pF(typ.)

: V

CEO

=50V

: I

=150mA(max.)

: h

FE(

=0.1mA)/ h

FE(

=2mA) =0.95

: 1SS352 Equivalent

: 2SC4738 Equivalent

1.Anode

2.Base

3.Collector

4.Emitter

5.NC

6.Cathode

Unit: mm

High Voltage

High Collector Current

Good h

FE Linearity

Q1 (Diode)

Q2 (Transistor)

Q1 (Diode) Absolute Maximum Ratings

(Ta = 25°C)

Characteristic

Maximum (peak) reverse voltage

Reverse voltage

Maximum (peak) forward current

Average forward current

Surge current (10ms)

Symbol

FSM

Rating

300

100

Unit

JEDEC

JEITA

TOSHIBA

―

2-3N1D

Weight: 0.015g (typ.)

Q2 (Transistor) Absolute Maximum Ratings (

Ta = 25°C

)

Characteristic

Collector-base voltage

Collector-emitter voltage

Emitter-base voltage

Collector current

Base current

Symbol

CBO

CEO

EBO

Rating

150

Unit

Absolute Maximum Ratings

(Ta = 25°C) (Q1, Q2 Common)

Characteristic

Collector power dissipation

Junction temperature

Storage temperature range

Symbol

stg

Rating

300

125

−55~125

Unit

°C

Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the

significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if

the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum

ratings.

Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook

(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test

report and estimated failure rate, etc).

*Total rating: Power dissipation per element should not exceed 200mW per element.

2007-11-22

HN2E02F-GR相似产品对比

	HN2E02F-GR	HN2E02F-Y	HN2E02F-BL
描述	TRANSISTOR 150 mA, 50 V, NPN, Si, SMALL SIGNAL TRANSISTOR, 2-3N1D, SM6, 6 PIN, BIP General Purpose Small Signal	TRANSISTOR 150 mA, 50 V, NPN, Si, SMALL SIGNAL TRANSISTOR, 2-3N1D, SM6, 6 PIN, BIP General Purpose Small Signal	TRANSISTOR 150 mA, 50 V, NPN, Si, SMALL SIGNAL TRANSISTOR, 2-3N1D, SM6, 6 PIN, BIP General Purpose Small Signal
厂商名称	Toshiba(东芝)	Toshiba(东芝)	Toshiba(东芝)
包装说明	2-3N1D, SM6, 6 PIN	SMALL OUTLINE, R-PDSO-G6	SMALL OUTLINE, R-PDSO-G6
针数	6	6	6
Reach Compliance Code	unknown	unknown	unknown
ECCN代码	EAR99	EAR99	EAR99
最大集电极电流 (IC)	0.15 A	0.15 A	0.15 A
集电极-发射极最大电压	50 V	50 V	50 V
配置	SINGLE WITH BUILT-IN DIODE	SINGLE WITH BUILT-IN DIODE	SINGLE WITH BUILT-IN DIODE
最小直流电流增益 (hFE)	200	120	350
JESD-30 代码	R-PDSO-G6	R-PDSO-G6	R-PDSO-G6
元件数量	1	1	1
端子数量	6	6	6
最高工作温度	125 °C	125 °C	125 °C
封装主体材料	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY
封装形状	RECTANGULAR	RECTANGULAR	RECTANGULAR
封装形式	SMALL OUTLINE	SMALL OUTLINE	SMALL OUTLINE
极性/信道类型	NPN	NPN	NPN
最大功率耗散 (Abs)	0.3 W	0.3 W	0.3 W
认证状态	Not Qualified	Not Qualified	Not Qualified
表面贴装	YES	YES	YES
端子形式	GULL WING	GULL WING	GULL WING
端子位置	DUAL	DUAL	DUAL
晶体管应用	SWITCHING	SWITCHING	SWITCHING
晶体管元件材料	SILICON	SILICON	SILICON
标称过渡频率 (fT)	60 MHz	60 MHz	60 MHz
Base Number Matches	-	1	1

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