V30100SG-E3, VF30100SG-E3, VB30100SG-E3, VI30100SG-E3
www.vishay.com
Vishay General Semiconductor
Ultra Low V
F
= 0.437 V at I
F
= 5 A
High Voltage Trench MOS Barrier Schottky Rectifier
TMBS
®
TO-220AB
ITO-220AB
FEATURES
• Trench MOS Schottky technology
• Low forward voltage drop, low power losses
• High efficiency operation
• Low thermal resistance
• Meets MSL level 1, per J-STD-020, LF maximum
peak of 245 °C (for TO-263AB package)
2
V30100SG
PIN 1
PIN 2
CASE
3
1
VF30100SG
PIN 1
PIN 2
2
3
1
• Solder bath temperature 275 °C maximum, 10 s, per
JESD 22-B106 (for TO-220AB, ITO-220AB, and
TO-262AA package)
• Material categorization: For definitions of compliance
please see
www.vishay.com/doc?99912
PIN 3
PIN 3
TO-263AB
K
K
TO-262AA
TYPICAL APPLICATIONS
For use in high frequency converters, switching power
supplies, freewheeling diodes, OR-ing diode, DC/DC
converters and reverse battery protection.
A
NC
1
VB30100SG
NC
A
K
HEATSINK
2
3
MECHANICAL DATA
Case:
TO-220AB,
ITO-220AB,
TO-263AB
and
TO-262AA
Molding compound meets UL 94 V-0 flammability rating
Base P/N-E3 - RoHS-compliant, commercial grade
Terminals:
Matte tin plated leads, solderable
J-STD-002 and JESD 22-B102
E3 suffix meets JESD 201 class 1A whisker test
per
VI30100SG
PIN 1
PIN 2
K
PIN 3
PRIMARY CHARACTERISTICS
I
F(AV)
V
RRM
I
FSM
V
F
at I
F
= 30 A
T
J
max.
Package
Diode variation
30 A
100 V
250 A
0.76 V
150 °C
TO-220AB, ITO-220AB,
TO-263AB, TO-262AA
Single die
Polarity:
As marked
Mounting Torque:
10 in-lbs maximum
MAXIMUM RATINGS
(T
A
= 25 °C unless otherwise noted)
PARAMETER
Maximum repetitive peak reverse voltage
Maximum average forward rectified current (fig. 1)
Peak forward surge current 8.3 ms single half
sine-wave superimposed on rated load
Non-repetitive avalanche energy at T
J
= 25 °C, L = 90 mH
Peak repetitive reverse current at t
p
= 2 μs, 1 kHz,
T
J
= 38 °C ± 2 °C
Voltage rate of change (rated V
R
)
Isolation voltage (ITO-220AB only) from terminal to heatsink
t = 1 min
Operating junction and storage temperature range
SYMBOL
V
RRM
I
F(AV)
I
FSM
E
AS
I
RRM
dV/dt
V
AC
T
J
, T
STG
V30100SG
VF30100SG
VB30100SG
30
250
230
1.0
10 000
1500
-40 to +150
VI30100SG
UNIT
V
A
A
mJ
A
V/μs
V
°C
100
Revision: 11-Sep-13
Document Number: 88996
1
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
V30100SG-E3, VF30100SG-E3, VB30100SG-E3, VI30100SG-E3
www.vishay.com
Vishay General Semiconductor
ELECTRICAL CHARACTERISTICS
(T
A
= 25 °C unless otherwise noted)
PARAMETER
Breakdown voltage
TEST CONDITIONS
I
R
= 10 mA
I
F
= 5 A
I
F
= 10 A
Instantaneous forward voltage
I
F
= 30 A
I
F
= 5 A
I
F
= 10 A
I
F
= 30 A
V
R
= 70 V
Reverse current
V
R
= 100 V
Notes
(1)
Pulse test: 300 μs pulse width, 1 % duty cycle
(2)
Pulse test: Pulse width
40 ms
T
A
= 25 °C
T
A
= 125 °C
T
A
= 25 °C
T
A
= 125 °C
I
R (2)
T
A
= 125 °C
T
A
= 25 °C
V
F (1)
T
A
= 25 °C
SYMBOL
V
BR
TYP.
100 (minimum)
0.50
0.60
0.92
0.44
0.55
0.76
8.8
6.5
43
35
MAX.
-
-
-
1.00
-
-
0.83
-
-
350
35
µA
mA
µA
mA
V
UNIT
V
THERMAL CHARACTERISTICS
(T
A
= 25 °C unless otherwise noted)
PARAMETER
Typical thermal resistance
SYMBOL
R
JC
V30100SG
2.0
VF30100SG VB30100SG
30
2.0
VI30100SG
2.0
UNIT
°C/W
ORDERING INFORMATION
(Example)
PACKAGE
TO-220AB
ITO-220AB
TO-263AB
TO-263AB
TO-262AA
PREFERRED P/N
V30100SG-E3/4W
VF30100SG-E3/4W
VB30100SG-E3/4W
VB30100SG-E3/8W
VI30100SG-E3/4W
UNIT WEIGHT (g)
1.88
1.74
1.37
1.37
1.45
PACKAGE CODE
4W
4W
4W
8W
4W
BASE QUANTITY
50/tube
50/tube
50/tube
800/reel
50/tube
DELIVERY MODE
Tube
Tube
Tube
Tape and reel
Tube
RATINGS AND CHARACTERISTICS CURVES
(T
A
= 25 °C unless otherwise noted)
35
Resistive or Inductive Load
32
D = 0.5
V(B,I)30100SG
28
D = 0.3
D = 0.2
D = 0.1
D = 1.0
D = 0.8
Average Forward Current (A)
30
25
20
15
10
5
0
0
25
50
75
100
VF30100SG
Average Power Loss (W)
24
20
16
12
8
4
0
T
D = t
p
/T
t
p
125
150
0
4
8
12
16
20
24
28
32
36
Case Temperature (°C)
Average Forward Current (A)
Fig. 1 -
Forward Current Derating Curve
Fig. 2 -
Forward Power Loss Characteristics
Revision: 11-Sep-13
Document Number: 88996
2
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
V30100SG-E3, VF30100SG-E3, VB30100SG-E3, VI30100SG-E3
www.vishay.com
Vishay General Semiconductor
10
100
Transient Thermal Impedance (°C/W)
Instantaneous Forward Current (A)
T
A
= 150 °C
Junction to Case
1
10
T
A
= 125 °C
0.1
1
T
A
= 25 °C
0.01
V(I)30100SG
0.001
0.01
0.1
0
0.2
0.4
0.6
0.8
1.0
1.2
0.1
1
10
100
Instantaneous Forward
Voltage
(V)
t - Pulse Duration (s)
Fig. 3 -
Typical Instantaneous Forward Characteristics
Fig. 6 -
Typical Transient Thermal Impedance
100
10
Transient Thermal Impedance (°C/W)
Instantaneous Reverse Current (mA)
T
A
= 150 °C
10
T
A
= 125 °C
1
Junction to Case
1
0.1
T
A
= 25 °C
0.01
VF30100SG
0.1
0.01
0.001
10
20
30
40
50
60
70
80
90
100
0.1
1
10
100
Percent of Rated Peak Reverse
Voltage
(%)
t - Pulse Duration (s)
Fig. 4 -
Typical Reverse Characteristics
Fig. 7 -
Typical Transient Thermal Impedance
10 000
T
J
= 25 °C
f = 1.0 MHz
V
sig
= 50 mVp-p
Junction Capacitance (pF)
1000
100
0.1
1
10
100
Reverse
Voltage
(V)
Fig. 5 -
Typical Junction Capacitance
Revision: 11-Sep-13
Document Number: 88996
3
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
V30100SG-E3, VF30100SG-E3, VB30100SG-E3, VI30100SG-E3
www.vishay.com
PACKAGE OUTLINE DIMENSIONS
in inches (millimeters)
TO-220AB
0.415 (10.54) MAX.
0.370 (9.40)
0.360 (9.14)
0.154 (3.91)
0.148 (3.74)
0.113 (2.87)
0.103 (2.62)
0.145 (3.68)
0.135 (3.43)
0.635 (16.13)
0.625 (15.87)
3
0.603 (15.32)
0.573 (14.55)
0.350 (8.89)
0.330 (8.38)
1.148 (29.16)
1.118 (28.40)
0.110 (2.79)
0.100 (2.54)
0.560 (14.22)
0.530 (13.46)
0.035 (0.90)
0.028 (0.70)
0.205 (5.20)
0.195 (4.95)
0.022 (0.56)
0.014 (0.36)
0.185 (4.70)
0.175 (4.44)
0.055 (1.39)
0.045 (1.14)
45° REF.
0.404 (10.26)
0.384 (9.75)
0.076 (1.93) REF.
0.076 (1.93) REF.
7° REF.
0.140 (3.56) DIA.
0.125 (3.17) DIA.
0.135 (3.43) DIA.
0.122 (3.08) DIA.
Vishay General Semiconductor
ITO-220AB
0.190 (4.83)
0.170 (4.32)
0.110 (2.79)
0.100 (2.54)
0.600 (15.24)
0.580 (14.73)
PIN
0.671 (17.04)
0.651 (16.54)
7° REF.
0.350 (8.89)
0.330 (8.38)
1
0.160 (4.06)
0.140 (3.56)
0.057 (1.45)
0.045 (1.14)
0.105 (2.67)
0.095 (2.41)
0.104 (2.65)
0.096 (2.45)
PIN
2
1
2
3
7° REF.
0.560 (14.22)
0.530 (13.46)
0.057 (1.45)
0.045 (1.14)
0.025 (0.64)
0.015 (0.38)
0.105 (2.67)
0.095 (2.41)
0.191 (4.85)
0.171 (4.35)
0.110 (2.79)
0.100 (2.54)
0.057 (1.45)
0.045 (1.14)
0.035 (0.89)
0.025 (0.64)
0.205 (5.21)
0.195 (4.95)
0.028 (0.71)
0.020 (0.51)
TO-262AA
0.411 (10.45) MAX.
0.250 (6.35) MIN.
K
0.055 (1.40)
0.047 (1.19)
0.185 (4.70)
0.175 (4.44)
0.055 (1.40)
0.045 (1.14)
30° (TYP.)
(REF.)
0.950 (24.13)
0.920 (23.37)
1
0.160 (4.06)
0.140 (3.56)
0.057 (1.45)
0.045 (1.14)
PIN
2
0.510 (12.95)
0.470 (11.94)
3
0.350 (8.89)
0.330 (8.38)
0.401 (10.19)
0.381 (9.68)
0.110 (2.79)
0.100 (2.54)
0.560 (14.22)
0.530 (13.46)
0.104 (2.65)
0.096 (2.45)
0.035 (0.90)
0.028 (0.70)
0.205 (5.20)
0.195 (4.95)
0.022 (0.56)
0.014 (0.35)
TO-263AB
0.411 (10.45)
0.380 (9.65)
0.245 (6.22)
MIN.
K
0.360 (9.14)
0.320 (8.13)
NC
K
A
0.055 (1.40)
0.047 (1.19)
0.670 (17.02)
0.591 (15.00)
0.15 (3.81) MIN.
0.08 (2.032) MIN.
0.105 (2.67)
0.095 (2.41)
0.33 (8.38) MIN.
0.190 (4.83)
0.160 (4.06)
0.055 (1.40)
0.045 (1.14)
Mounting Pad Layout
0.42 (10.66) MIN.
0.624 (15.85)
0.591 (15.00)
0.037 (0.940)
0.027 (0.686)
0.105 (2.67)
0.095 (2.41)
0 to 0.01 (0 to 0.254)
0.110 (2.79)
0.090 (2.29)
0.021 (0.53)
0.014 (0.36)
0.205 (5.20)
0.195 (4.95)
0.140 (3.56)
0.110 (2.79)
Revision: 11-Sep-13
Document Number: 88996
4
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
Legal Disclaimer Notice
www.vishay.com
Vishay
Disclaimer
ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE.
Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively,
“Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other
disclosure relating to any product.
Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or
the continuing production of any product. To the maximum extent permitted by applicable law, Vishay disclaims (i) any and all
liability arising out of the application or use of any product, (ii) any and all liability, including without limitation special,
consequential or incidental damages, and (iii) any and all implied warranties, including warranties of fitness for particular
purpose, non-infringement and merchantability.
Statements regarding the suitability of products for certain types of applications are based on Vishay’s knowledge of typical
requirements that are often placed on Vishay products in generic applications. Such statements are not binding statements
about the suitability of products for a particular application. It is the customer’s responsibility to validate that a particular
product with the properties described in the product specification is suitable for use in a particular application. Parameters
provided in datasheets and/or specifications may vary in different applications and performance may vary over time. All
operating parameters, including typical parameters, must be validated for each customer application by the customer’s
technical experts. Product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase,
including but not limited to the warranty expressed therein.
Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining
applications or for any other application in which the failure of the Vishay product could result in personal injury or death.
Customers using or selling Vishay products not expressly indicated for use in such applications do so at their own risk. Please
contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications.
No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by
any conduct of Vishay. Product names and markings noted herein may be trademarks of their respective owners.
Material Category Policy
Vishay Intertechnology, Inc. hereby certifies that all its products that are identified as RoHS-Compliant fulfill the
definitions and restrictions defined under Directive 2011/65/EU of The European Parliament and of the Council
of June 8, 2011 on the restriction of the use of certain hazardous substances in electrical and electronic equipment
(EEE) - recast, unless otherwise specified as non-compliant.
Please note that some Vishay documentation may still make reference to RoHS Directive 2002/95/EC. We confirm that
all the products identified as being compliant to Directive 2002/95/EC conform to Directive 2011/65/EU.
Vishay Intertechnology, Inc. hereby certifies that all its products that are identified as Halogen-Free follow Halogen-Free
requirements as per JEDEC JS709A standards. Please note that some Vishay documentation may still make reference
to the IEC 61249-2-21 definition. We confirm that all the products identified as being compliant to IEC 61249-2-21
conform to JEDEC JS709A standards.
Revision: 02-Oct-12
1
Document Number: 91000
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