NCS1002A
Constant Voltage / Constant
Current SecondarySide
Controller
Description
The NCS1002A is a performance upgrade from the NCS1002
focused on reducing power consumption in applications that require
more efficient operation. It is a highly integrated solution for
Switching Mode Power Supply (SMPS) applications requiring a dual
control loop to perform Constant Voltage (CV) and Constant Current
(CC) regulation. The NCS1002A integrates a 2.5 V voltage reference
and two precision op amps. The voltage reference, along with Op Amp
1, is the core of the voltage control-loop. Op Amp 2 is an independent,
uncommitted amplifier specifically designed for the current control.
Key external components needed to complete the two control loops
are: (a) A resistor divider that senses the output of the power supply
(battery charger) and fixes the voltage regulation set point at the
specified value. (b) A sense resistor that feeds the current sensing
circuit with a voltage proportional to the DC output current. This
resistor determines the current regulation set point and must be
adequately rated in terms of power dissipation. The NCS1002A comes
in a small 8−pin SOIC package and is ideal for space-shrunk
applications such as battery chargers.
Features
http://onsemi.com
MARKING
DIAGRAMS
8
8
1
A
L
Y
W
G
SOIC−8
D SUFFIX
CASE 751
1
1002A
ALYWG
G
= Assembly Location
= Wafer Lot
= Year
= Work Week
= Pb−Free Package
(Note: Microdot may be in either location)
PIN CONNECTIONS
Out 1
1
2
3
4
(Top View)
8 V
CC
7 Out 2
6 In 2−
5 In 2+
•
•
•
•
•
•
•
Low Input Offset Voltage: 0.5 mV, Typ
Input Common-Mode Range includes Ground
Low Quiescent Current: 75
mA
per Op Amp at V
CC
= 5 V
Large Output Voltage Swing
Wide Power Supply Range: 3 V to 36 V
High ESD Protection: 2 kV
This is a Pb−Free Device
Output 1
In 1−
In 1+
GND
Typical Applications
1
- +
2
8
V
CC
Output 2
•
Battery Chargers
•
Switch Mode Power Supplies
7
+ -
6
2.5V
Inputs 1
3
Inputs 2
5
GND
4
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 8 of this data sheet.
©
Semiconductor Components Industries, LLC, 2014
1
June, 2014 − Rev. 5
Publication Order Number:
NCS1002A/D
NCS1002A
MAXIMUM RATINGS
Parameter
Supply Voltage (V
CC
to GND) (Operating Range V
CC
= 3 V to 36 V)
Differential Input Voltage
Input Voltage
ESD Protection Voltage at Pin
Maximum Junction Temperature
Specification Temperature Range (T
min
to T
max
)
Operating Free−Air Temperature Range
Storage Temperature Range
Human Body Model
Symbol
V
CC
V
id
V
i
V
ESD
T
J
T
A
T
oper
T
stg
Rating
36
36
−0.3 to +36
2000
150
−40 to +105
−55 to +125
−55 to +150
Unit
V
V
V
V
°C
°C
°C
°C
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the
Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect
device reliability.
THERMAL CHARACTERISTICS
Parameter
Thermal Resistance
Junction−to−Ambient
Symbol
R
qJA
Rating
175
Unit
°C/W
http://onsemi.com
2
NCS1002A
ELECTRICAL CHARACTERISTICS
Symbol
I
CC
I
CC
Characteristics
Conditions
Min
Typ
0.15
0.2
Max
0.25
0.3
Unit
mA
mA
Total Supply Current, excluding current in the Voltage Reference V
CC
= 5 V, no
load; −40
v
T
A
v
+105°C
Total Supply Current, excluding Current in the Voltage Reference V
CC
= 30 V, no
load; −40
v
T
A
v
+105°C
OP AMP 1 (OP AMP WITH NONINVERTING INPUT CONNECTED TO THE INTERNAL V
ref
)
(V
CC
= 5 V, T
A
= 25°C unless otherwise noted)
V
IO
Input Offset Voltage
T
A
= 25°C
−40
v
T
A
v
+105°C
DV
IO
l
IB
AVD
PSRR
I
SOURCE
I
O
I
SINK
Input Offset Voltage Drift (−40
v
T
A
v
+105°C)
Input Bias Current (Inverting Input Only)
Large Signal Voltage Gain (V
CC
= 15 V, R
L
= 2 kW,
V
ICM
= 0 V)
Power Supply Rejection (V
CC
= 5.0 V to 30 V, V
OUT
= 2 V)
Output Source Current (V
CC
= 15 V, V
OUT
= 2.0 V,
V
id
= 1 V)
Short Circuit to GND (V
CC
= 15 V)
Output Current Sink (V
id
= −1 V)
V
CC
= +15 V, V
OUT
= 0.2 V
(Note 1)
V
CC
= +15 V, V
OUT
= 2 V
V
OH
Output Voltage Swing, High (V
CC
= 30 V)
R
L
= 2 kW, T
A
= 25°C
−40
v
T
A
v
+105°C
R
L
= 10 kW, T
A
= 25°C
−40
v
T
A
v
+105°C
V
OL
SR
GBP
THD
Output Voltage Swing, Low
Slew Rate (AV = +1, V
i
= 0.5 V to 2 V, V
CC
= 15 V,
R
L
= 2 kW, C
L
= 100 pF)
Gain Bandwidth Product (V
CC
= 30 V, AV = +1, (Note 1)
R
L
= 2 kW, C
L
= 100 pF, f = 100 kHz, V
IN
= 10 mV
PP
)
Total Harmonic Distortion (f = 1 kHz, AV = 10,
R
L
= 2 kW, V
CC
= 30 V, V
OUT
= 2 V
PP
)
R
L
= 10 kW, T
A
= 25°C
0.2
0.5
1
10
26
26
27
27
5.0
0.4
0.9
0.08
50
mV
V/ms
MHz
%
28
80
20
7.0
20
100
100
40
40
10
20
27
60
150
2.0
3.0
mV
mV
mV/°C
nA
V/mV
dB
mA
mA
mA
mA
V
OP AMP 2 (INDEPENDENT OP AMP)
(V
CC
= 5.0 V, T
A
= 25°C unless otherwise noted)
V
IO
Input Offset Voltage
T
A
= 25°C
−40
v
T
A
v
+105°C
DV
IO
I
IO
Input Offset Voltage Drift (−40
v
T
A
v
+105°C)
Input Offset Current
T
A
= 25°C
−40
v
T
A
v
+105°C
I
B
Input Bias Current
T
A
= 25°C
−40
v
T
A
v
+105°C
AVD
Large Signal Voltage Gain (V
CC
= 15 V,
R
L
= 2 kW, V
OUT
= 1.4 V to 11.4 V)
Power Supply Rejection (V
CC
= 5 V to 30 V)
T
A
= 25°C
−40
v
T
A
v
+105°C
50
25
80
100
dB
100
20
7.0
2.0
75
150
150
200
V/mV
nA
0.5
2.0
3.0
mV/°C
nA
mV
PSRR
1. Guaranteed by design and/or characterization.
http://onsemi.com
3
NCS1002A
ELECTRICAL CHARACTERISTICS (continued)
Symbol
Characteristics
Conditions
Min
Typ
Max
Unit
OP AMP 2 (INDEPENDENT OP AMP) (continued)
(V
CC
= 5.0 V, T
A
= 25°C unless otherwise noted)
V
ICM
Input Common Mode Voltage Range (Note 2)
(V
CC
= +30 V)
T
A
= 25°C
−40
v
T
A
v
+105°C
CMRR
Common Mode Rejection Ratio (Note 4)
0 to V
CC
− 1.7 V,
T
A
= 25°C
0 to V
CC
− 2.2 V
−40
v
T
A
v
+105°C
I
SOURCE
I
O
I
SINK
Output Current Source (V
CC
= 15 V, V
OUT
= 2 V, V
ID
= +1 V)
Short−Circuit to GND (V
CC
= 15 V)
Output Current Sink (V
ID
= −1 V)
V
CC
= +15 V, V
OUT
= 0.2 V
V
CC
= +15 V, V
OUT
= 2 V
V
OH
Output Voltage Swing, High (V
CC
= 30 V)
R
L
= 2 kW, T
A
= 25°C
−40
v
T
A
v
+105°C
R
L
= 10 kW, T
A
= 25°C
−40
v
T
A
v
+105°C
V
OL
SR
GBP
THD
e
noise
Output Voltage Swing, Low
R
L
= 10 kW, T
A
= 25°C
0.2
0.5
1
10
26
26
27
27
5.0
0.4
0.9
0.08
50
50
mV
V/ms
MHz
%
nV/√Hz
28
0
0
70
60
20
40
40
10
20
27
60
mA
mA
mA
mA
V
85
V
CC
−
1.5
V
CC
−
2.0
dB
V
Slew Rate (AV = +1, V
i
= 0.5 V to 3 V, V
CC
= 15 V, R
L
= 2 kW, C
L
= 100 pF)
Gain Bandwidth Product (V
CC
= 30 V, AV = +1,
R
L
= 2 kW, C
L
= 100 pF, f = 100 kHz, V
IN
= 10 mV
PP
) (Note 4)
Total Harmonic Distortion (f = 1 kHz, AV = 10,
R
L
= 2 kW, V
CC
= 30 V, V
OUT
= 2 V
PP
)
Equivalent Input Noise Voltage (f = 1 kHz, R
S
= 100
W,
V
CC
= 30 V)
VOLTAGE REFERENCE
(V
CC
= 5.0 V, T
A
= 25°C unless otherwise noted)
I
K
V
ref
Cathode Current
Reference Voltage (I
K
= 1 mA)
T
A
= 25°C
−40
v
T
A
v
+105°C
DV
ref
I
min
I ZKA I
Reference Deviation over Temperature (V
KA
= V
ref
, I
K
= 10 mA, −40
v
T
A
v
+105°C) (Note 4)
Minimum Cathode Current for Regulation (2.4875 V
f
≤
V
KA
≤
2.5125 V
f
)
Dynamic Impedance (Note 3)
(V
KA
= V
ref
, I
K
= 1 mA to 100 mA, f < 1 kHz)
0.05
2.49
2.48
2.5
2.5
7.0
10
0.2
100
2.51
2.52
30
50
0.5
mV
mA
W
mA
V
2. The input common−mode voltage of either input signal should not be allowed to go negative by more than 0.3 V. The upper end of the
common−mode range is V
CC
− 1.5 V. Both inputs can go to V
CC
+ 0.3 V without damage.
3. The Dynamic Impedance is defined as l ZKA l =
DV
KA
/
DI
K
.
4. Guaranteed by design and/or characterization.
http://onsemi.com
4
NCS1002A
1.4
INPUT OFFSET VOLTAGE (mV)
1.2
4
1.0
0.8
0.6
0.4
0.2
0
−50
0
−40
OP1
BIAS CURRENT (nA)
70
90
110
130
5
3
2
1
−30
−10
10
30
50
−20
0
20
40
60
80
100
120
TEMPERATURE (°C)
TEMPERATURE (°C)
Figure 1. Input Offset Voltage vs. Temperature
Figure 2. IB vs. Temperature
2.6
2.58
2.56
2.54
Vref (V)
Vref (V)
0
10
20
30
40
50
60
70
80
90
100
2.52
2.5
2.48
2.46
2.44
2.42
2.4
CATHODE CURRENT IK (mA)
2.52
2.51
2.5
2.49
2.48
−40
−20
0
20
40
60
80
100
TEMPERATURE (°C)
Figure 3. Vref as a Function of IK
Figure 4. Vref Over Temperature
0.5
DYNAMIC IMPEDANCE (W)
0.45
0.4
0.35
0.3
0.25
0.2
−40 −30 −20 −10 0
10 20 30 40 50 60 70 80 90 100
TEMPERATURE (°C)
Figure 5. Ref Dynamic Impedance vs.
Temperature
http://onsemi.com
5