MUN5133DW1,
NSBA143ZDXV6,
NSBA143ZDP6
Dual PNP Bias Resistor
Transistors
R1 = 4.7 kW, R2 = 47 kW
PNP Transistors with Monolithic Bias
Resistor Network
This series of digital transistors is designed to replace a single
device and its external resistor bias network. The Bias Resistor
Transistor (BRT) contains a single transistor with a monolithic bias
network consisting of two resistors; a series base resistor and a
base−emitter resistor. The BRT eliminates these individual
components by integrating them into a single device. The use of a BRT
can reduce both system cost and board space.
Features
(3)
R
1
Q
1
Q
2
R
2
(4)
(5)
R
1
(6)
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PIN CONNECTIONS
(2)
(1)
R
2
•
S and NSV Prefix for Automotive and Other Applications
•
•
•
•
Requiring Unique Site and Control Change Requirements;
AEC-Q101 Qualified and PPAP Capable
Simplifies Circuit Design
Reduces Board Space
Reduces Component Count
These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
MARKING DIAGRAMS
6
0K M
G
G
1
SOT−363
CASE 419B
MAXIMUM RATINGS
(T
A
= 25°C, common for Q1 and Q2, unless otherwise noted)
Rating
Collector−Base Voltage
Collector−Emitter Voltage
Collector Current
−
Continuous
Input Forward Voltage
Input Reverse Voltage
Symbol
V
CBO
V
CEO
I
C
V
IN(fwd)
V
IN(rev)
Max
50
50
100
30
5
Unit
Vdc
Vdc
mAdc
Vdc
Vdc
0K/K
M
G
1
M
G
G
K
1
0K M
G
G
SOT−563
CASE 463A
SOT−963
CASE 527AD
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
= Specific Device Code
= Date Code*
= Pb−Free Package
(Note: Microdot may be in either location)
*Date Code orientation may vary depending
upon manufacturing location.
ORDERING INFORMATION
Device
MUN5133DW1T1G
NSBA143ZDXV6T1G
NSBA143ZDP6T5G
Package
SOT−363
SOT−563
SOT−963
Shipping
†
3,000 / Tape & Reel
4,000 / Tape & Reel
8,000 / Tape & Reel
†For information on tape and reel specifications, including part orientation and
tape sizes, please refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
©
Semiconductor Components Industries, LLC, 2013
May, 2013
−
Rev. 1
1
Publication Order Number:
DTA143ZD/D
MUN5133DW1, NSBA143ZDXV6, NSBA143ZDP6
THERMAL CHARACTERISTICS
Characteristic
MUN5133DW1 (SOT−363) One Junction Heated
Total Device Dissipation
T
A
= 25°C
Derate above 25°C
Thermal Resistance,
Junction to Ambient
MUN5133DW1 (SOT−363) Both Junction Heated
(Note 3)
Total Device Dissipation
T
A
= 25°C
Derate above 25°C
Thermal Resistance,
Junction to Ambient
Thermal Resistance,
Junction to Lead
Junction and Storage Temperature Range
NSBA143ZDXV6 (SOT−563) One Junction Heated
Total Device Dissipation
T
A
= 25°C
Derate above 25°C
Thermal Resistance,
Junction to Ambient
NSBA143ZDXV6 (SOT−563) Both Junction Heated
(Note 3)
Total Device Dissipation
T
A
= 25°C
Derate above 25°C
Thermal Resistance,
Junction to Ambient
Junction and Storage Temperature Range
NSBA143ZDP6 (SOT−963) One Junction Heated
Total Device Dissipation
T
A
= 25°C
Derate above 25°C
Thermal Resistance,
Junction to Ambient
NSBA143ZDP6 (SOT−963) Both Junction Heated
(Note 3)
Total Device Dissipation
T
A
= 25°C
Derate above 25°C
Thermal Resistance,
Junction to Ambient
Junction and Storage Temperature Range
1.
2.
3.
4.
5.
FR−4 @ Minimum Pad.
FR−4 @ 1.0 x 1.0 Inch Pad.
Both junction heated values assume total power is sum of two equally powered channels.
FR−4 @ 100 mm
2
, 1 oz. copper traces, still air.
FR−4 @ 500 mm
2
, 1 oz. copper traces, still air.
(Note 4)
(Note 5)
(Note 4)
(Note 5)
(Note 4)
(Note 5)
P
D
339
408
2.7
3.3
369
306
−55
to +150
mW
mW/°C
°C/W
°C
(Note 4)
(Note 5)
(Note 4)
(Note 5)
(Note 4)
(Note 5)
P
D
231
269
1.9
2.2
540
464
mW
mW/°C
°C/W
(Note 1)
(Note 1)
(Note 1)
P
D
500
4.0
250
−55
to +150
mW
mW/°C
°C/W
°C
(Note 1)
(Note 1)
(Note 1)
P
D
357
2.9
350
mW
mW/°C
°C/W
(Note 1)
(Note 2)
(Note 1)
(Note 2)
(Note 1)
(Note 2)
(Note 1)
(Note 2)
P
D
250
385
2.0
3.0
493
325
188
208
−55
to +150
mW
mW/°C
°C/W
°C/W
°C
(Note 1)
(Note 2)
(Note 1)
(Note 2)
(Note 1)
(Note 2)
P
D
187
256
1.5
2.0
670
490
mW
mW/°C
°C/W
Symbol
Max
Unit
R
qJA
R
qJA
R
qJL
T
J
, T
stg
R
qJA
R
qJA
T
J
, T
stg
R
qJA
R
qJA
T
J
, T
stg
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2
MUN5133DW1, NSBA143ZDXV6, NSBA143ZDP6
ELECTRICAL CHARACTERISTICS
(T
A
= 25°C, common for Q
1
and Q
2
, unless otherwise noted)
Characteristic
OFF CHARACTERISTICS
Collector−Base Cutoff Current
(V
CB
= 50 V, I
E
= 0)
Collector−Emitter Cutoff Current
(V
CE
= 50 V, I
B
= 0)
Emitter−Base Cutoff Current
(V
EB
= 6.0 V, I
C
= 0)
Collector−Base Breakdown Voltage
(I
C
= 10
mA,
I
E
= 0)
Collector−Emitter Breakdown Voltage (Note 6)
(I
C
= 2.0 mA, I
B
= 0)
ON CHARACTERISTICS
DC Current Gain (Note 6)
(I
C
= 5.0 mA, V
CE
= 10 V)
Collector−Emitter Saturation Voltage (Note 6)
(I
C
= 10 mA, I
B
= 0.3 mA)
Input Voltage (off)
(V
CE
= 5.0 V, I
C
= 100
mA)
Input Voltage (on)
(V
CE
= 0.2 V, I
C
= 5.0 mA)
Output Voltage (on)
(V
CC
= 5.0 V, V
B
= 2.5 V, R
L
= 1.0 kW)
Output Voltage (off)
(V
CC
= 5.0 V, V
B
= 0.5 V, R
L
= 1.0 kW)
Input Resistor
Resistor Ratio
6. Pulsed Condition: Pulse Width = 300 msec, Duty Cycle
≤
2%.
h
FE
V
CE(sat)
V
i(off)
V
i(on)
V
OL
V
OH
R1
R
1
/R
2
80
−
−
−
−
4.9
3.3
0.08
140
−
0.67
0.91
−
−
4.7
0.1
−
0.25
−
−
0.2
−
6.1
0.14
Vdc
Vdc
Vdc
Vdc
Vdc
kW
I
CBO
I
CEO
I
EBO
V
(BR)CBO
V
(BR)CEO
−
−
−
50
50
−
−
−
−
−
100
500
0.18
−
−
nAdc
nAdc
mAdc
Vdc
Vdc
Symbol
Min
Typ
Max
Unit
400
P
D
, POWER DISSIPATION (mW)
350
300
250
200
150
100
50
0
−50
−25
0
25
50
75
100
125
150
(1) (2) (3)
(1) SOT−363; 1.0 x 1.0 inch Pad
(2) SOT−563; Minimum Pad
(3) SOT−963; 100 mm
2
, 1 oz. copper trace
AMBIENT TEMPERATURE (°C)
Figure 1. Derating Curve
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3
MUN5133DW1, NSBA143ZDXV6, NSBA143ZDP6
TYPICAL CHARACTERISTICS
MUN5133DW1, NSBA143ZDXV6
V
CE(sat)
, COLLECTOR−EMITTER VOLTAGE (V)
1
I
C
/I
B
= 10
75°C
0.1
−25°C
0.01
25°C
h
FE
, DC CURRENT GAIN
1000
75°C
100
−25°C
V
CE
= 10 V
25°C
10
0.001
0
20
40
30
10
I
C
, COLLECTOR CURRENT (mA)
50
1
1
10
I
C
, COLLECTOR CURRENT (mA)
100
Figure 2. V
CE(sat)
vs. I
C
Figure 3. DC Current Gain
10
8
7
6
5
4
3
2
1
0
0
10
20
30
40
50
I
C
, COLLECTOR CURRENT (mA)
9
C
ob
, CAPACITANCE (pF)
f = 10 kHz
I
E
= 0 A
T
A
= 25°C
100
75°C
10
25°C
1
0.1
−25°C
0.01
V
O
= 5 V
0
1
2
3
4
5
6
7
V
in
, INPUT VOLTAGE (V)
8
9
10
0.001
V
R
, REVERSE BIAS VOLTAGE (V)
Figure 4. Output Capacitance
10
Figure 5. Output Current vs. Input Voltage
V
in
, INPUT VOLTAGE (V)
−25°C
1
75°C
25°C
V
O
= 0.2 V
0.1
0
10
20
30
40
I
C
, COLLECTOR CURRENT (mA)
50
Figure 6. Input Voltage vs. Output Current
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4
MUN5133DW1, NSBA143ZDXV6, NSBA143ZDP6
TYPICAL CHARACTERISTICS
NSBA143ZDP6
1
V
CE(sat)
, COLLECTOR−EMITTER
VOLTAGE (V)
1000
I
C
/I
B
= 10
V
CE
= 10 V
150°C
h
FE
, DC CURRENT GAIN
100
25°C
10
−55°C
0.1
150°C
−55°C
25°C
0.01
1
10
20
30
40
50
1
0.1
1
10
100
I
C
, COLLECTOR CURRENT (mA)
I
C
, COLLECTOR CURRENT (mA)
Figure 7. V
CE(sat)
vs. I
C
7
6
C
ob
, CAPACITANCE (pF)
5
4
3
2
1
0
0
10
20
30
40
50
I
C
, COLLECTOR CURRENT (mA)
f = 10 kHz
I
E
= 0 A
T
A
= 25°C
100
150°C
10
1
0.1
0.01
Figure 8. DC Current Gain
−55°C
25°C
0.001
0
1
2
3
V
in
, INPUT VOLTAGE (V)
V
O
= 5 V
4
5
V
R
, REVERSE BIAS VOLTAGE (V)
Figure 9. Output Capacitance
Figure 10. Output Current vs. Input Voltage
100
V
in
, INPUT VOLTAGE (V)
10
25°C
−55°C
1
150°C
V
O
= 0.2 V
0
10
20
30
40
I
C
, COLLECTOR CURRENT (mA)
50
0.1
Figure 11. Input Voltage vs. Output Current
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