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Datasheet> 器件分类 > 无线/射频/通信> 射频和微波> SGL-0263Z
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SGL-0263Z

产品描述1400MHz - 2500MHz RF/MICROWAVE NARROW BAND LOW POWER AMPLIFIER, GREEN, SOT-363, 6 PIN
产品类别无线/射频/通信    射频和微波   
文件大小522KB，共6页
制造商Qorvo
官网地址https://www.qorvo.com
标准
下载文档 详细参数 全文预览

SGL-0263Z概述

1400MHz - 2500MHz RF/MICROWAVE NARROW BAND LOW POWER AMPLIFIER, GREEN, SOT-363, 6 PIN

SGL-0263Z规格参数

参数名称属性值
是否Rohs认证符合
厂商名称Qorvo
Reach Compliance Codecompliant
特性阻抗50 Ω
构造COMPONENT
增益12.1 dB
最大输入功率 (CW)10 dBm
JESD-609代码e3
最大工作频率2500 MHz
最小工作频率1400 MHz
最高工作温度85 °C
最低工作温度-40 °C
射频/微波设备类型NARROW BAND LOW POWER
端子面层Matte Tin (Sn)
最大电压驻波比1.5

SGL-0263Z文档预览

SGL0263Z
1400MHz to
2500MHz Sili-
con Germa-
nium
Cascadable
Low Noise
Amplifier
SGL0263Z
1400MHz to 2500MHz SILICON GERMANIUM
CASCADABLE LOW NOISE AMPLIFIER
Package: SOT-363
Product Description
The SGL0263Z is a high performance SiGe HBT MMIC low noise amplifier
featuring 1 micron emitters with F
T
up to 50GHz. This device has an inter-
nal temperature compensation circuit permitting operation directly from
supply voltages as low as 2.5V. The SGL0263Z has been characterized at
V
D
=3V for low power and 4V for medium power applications. Only two DC-
blocking capacitors, 2 input matching components, a bias resistor, and an
optional RF choke are required for operation from 1400MHz to 2500MHz.
Optimum Technology
Matching® Applied
GaAs HBT
GaAs MESFET
InGaP HBT
SiGe BiCMOS
Si BiCMOS
Temperature
Compensation
Circuit
Features
High Input/Output Intercept
Low Noise Figure: 1.3dB typ.
at 1900MHz
Low Power Consumption
Single Voltage Supply Opera-
tion
Internal Temperature Com-
pensation
Receivers, GPS, RFID
Cellular, Fixed Wireless, Land
Mobile
V
S
RF Out / V
S
Applications
RF In
SiGe HBT
GaAs pHEMT
Si CMOS
Si BJT
GaN HEMT
InP HBT
Parameter
Small Signal Gain
Specification (V
S
=3V)
Min.
Typ.
Max.
12.1
13.4
12.5
10.8
5.5
6.8
7.9
9.5
14.7
Specification (V
S
=4V)
Min.
Typ.
Max.
13.8
12.9
11.3
11.4
12.3
12.8
15.1
Unit
dB
dB
dB
dBm
dBm
dBm
dBm
Condition
1900MHz
2100MHz
2400MHz
1900MHz
2100MHz
2400MHz
1900MHz
Output Power at 1dB Compres-
sion
3.5
Input Third Order Intercept
Point
Tone Spacing=1MHz, P
OUT
per
tone=-13dBm
7.5
Noise Figure
13.5
15.5
1.3
1.5
2.0
13.3
12.9
20.7
12.5
255
1.7
16.8
18.4
1.9
2.1
2.8
21.9
17.4
21.0
23.0
dBm
dBm
dB
dB
dB
dB
dB
dB
mA
°C/W
2100MHz
2400MHz
1900MHz, Z
S
=50
2100MHz, Z
S
=50
2400MHz, Z
S
=50
1900MHz
1900MHz
1900MHz
Input Return Loss
10.0
Output Return Loss
10.0
Reverse Isolation
Device Current
9.0
15.0
Thermal Resistance (Junction
to Lead)
Test Conditions: 1400MHz to 2500MHz Application Circuit, T
LEAD
=25°C, Z
0
=Z
L
=50
RF MICRO DEVICES®, RFMD®, Optimum Technology Matching®, Enabling Wireless Connectivity™, PowerStar®, POLARIS™ TOTAL RADIO™ and UltimateBlue™ are trademarks of RFMD, LLC. BLUETOOTH is a trade-
mark owned by Bluetooth SIG, Inc., U.S.A. and licensed for use by RFMD. All other trade names, trademarks and registered trademarks are the property of their respective owners. ©2006, RF Micro Devices, Inc.
DS111011
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical
support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com.
1 of 6
SGL0263Z
Absolute Maximum Ratings
Parameter
Max Device Current (I
D
)
Max Device Voltage (V
D
)
Max RF Input Power
Max Junction Temp (T
J
)
Operating Temp Range (T
L
)
Max Storage Temp
ESD
MSL
Rating
45
5
+10
+150
-40 to +85
+150
1A
1
Unit
mA
V
dBm
°C
°C
°C
Class
Exceeding any one or a combination of the Absolute Maximum Rating conditions may
cause permanent damage to the device. Extended application of Absolute Maximum
Rating conditions to the device may reduce device reliability. Specified typical perfor-
mance or functional operation of the device under Absolute Maximum Rating condi-
tions is not implied.
The information in this publication is believed to be accurate and reliable. However, no
responsibility is assumed by RF Micro Devices, Inc. ("RFMD") for its use, nor for any
infringement of patents, or other rights of third parties, resulting from its use. No
license is granted by implication or otherwise under any patent or patent rights of
RFMD. RFMD reserves the right to change component circuitry, recommended appli-
cation circuitry and specifications at any time without prior notice.
RFMD Green: RoHS compliant per EU Directive 2002/95/EC, halogen free
per IEC 61249-2-21, < 1000ppm each of antimony trioxide in polymeric
materials and red phosphorus as a flame retardant, and <2% antimony in
solder.
Caution! ESD sensitive device.
Operation of this device beyond any one of these limits may cause permanent dam-
age. For reliable continuous operation, the device voltage and current must not
exceed the maximum operating values specified in the table on page one.
Bias Conditions should also satisfy the following expression:
I
D
V
D
<(T
J
-T
L
)/R
TH
, j-l
Typical RF Performance Over Lead Temperature at 3 V and 4 V -- 1400-2500 MHz Evaluation Board
Input IP3 vs. Frequency Over Temperature
20
18
16
16
14
12
10
P1dB vs. Frequency Over Temperature
Input IP3 (dBm)
14
12
10
T=-40°C, VS=3 V
P1dB (dBm)
8
6
T=-40°C, VS=3 V
8
6
4
1400
T=+25°C, VS=3 V
T=+85°C, VS=3 V
T=-40°C, VS=4 V
T=+25°C, VS=4 V
T=+85°C, VS=4 V
4
2
0
1400
T=+25°C, VS=3 V
T=+85°C, VS=3 V
T=-40°C, VS=4 V
T=+25°C, VS=4 V
T=+85°C, VS=4 V
1500
1600
1700
1800
1900
2000
2100
2200
2300
2400
2500
1500
1600
1700
1800
1900
2000
2100
2200
2300
2400
2500
Freq. (MHz)
Freq. (MHz)
Noise Figure vs. Frequency at T
LEAD
=+25C
3.5
Output IP3 vs. Frequency Over Temperature
34
32
3.0
30
Output IP3 (dBm)
2.5
28
NF (dB)
2.0
26
24
T=-40°C, VS=3 V
1.5
22
1.0
Vs=3 V
Vs=4 V
0.5
1400
T=+25°C, VS=3 V
T=+85°C, VS=3 V
T=-40°C, VS=4 V
20
18
1400
T=+25°C, VS=4 V
T=+85°C, VS=4 V
1600
1800
2000
2200
2400
1500
1600
1700
1800
1900
2000
2100
2200
2300
2400
2500
Freq. (MHz)
Freq. (MHz)
Device Voltage (Vd) vs. Device Current (Id)
for T = -40C, +25C, & +85C
Load lines for Vs =+5 Volts, Rs=43
W
and 180
W
5.0
Vs= +5 V, Rs = 43
W
4.5
4.0
3.5
Vd (Volts)
3.0
2.5
2.0
1.5
1.0
0.5
0.0
6
8
10
12
14
16
Id (mA)
18
20
22
24
26
T=-40C
T=+25C
T=+85C
Vs = +5 V, Rs = 180
W
2 of 6
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical
support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com.
DS111011
SGL0263Z
Typical RF Performance at V
S
= 3 V -- 1400-2500 MHz Evaluation Board -- T
LEAD
=+25
°
C
20
16
12
8
4
0
1300
|
S
21
|
vs. Frequency
0
-5
-1 0
|
S
11
|
vs. Frequency
S
21
(dB)
S
11
(dB)
-1 5
-2 0
-2 5
-3 0
1300
1500
1700
1900
2100
2300
2500
1500
1700
1900
2100
2300
2500
F re q u e n c y (M H z)
-1 0
-1 4
-1 8
-2 2
-2 6
-2 5
F re q u e n c y (M H z)
|
S
12
|
vs. Frequency
|
S
22
|
vs. Frequency
0
-5
-1 0
S
12
(dB)
S
22
(dB)
1500
1700
1900
2100
2300
2500
-1 5
-2 0
-3 0
1300
-3 0
1300
1500
1700
1900
2100
2300
2500
F re q u e n c y (M H z)
F re q u e n c y (M H z)
Typical RF Performance at V
S
= 4 V -- 1400-2500 MHz Evaluation Board -- T
LEAD
=+25
°
C
|
S
21
|
vs. Frequency
20
16
12
8
4
0
1300
0
-5
-1 0
|
S
11
|
vs. Frequency
S
21
(dB)
S
11
(dB)
-1 5
-2 0
-2 5
-3 0
1300
1500
1700
1900
2100
2300
2500
1500
1700
1900
2100
2300
2500
F re q u e n c y (M H z)
F re q u e n c y (M H z)
|
S
12
|
vs. Frequency
-1 0
-1 4
-1 8
-2 2
-2 6
-3 0
1300
0
-5
-1 0
|
S
22
|
vs. Frequency
S
12
(dB)
S
22
(dB)
-1 5
-2 0
-2 5
-3 0
1300
1500
1700
1900
2100
2300
2500
1500
1700
1900
2100
2300
2500
F re q u e n c y (M H z)
F re q u e n c y (M H z)
DS111011
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical
support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com.
3 of 6
SGL0263Z
Pin
1
3
4
2, 5
6
Function
N/C
RF IN
DC BIAS
GND
RF OUT/BIAS
Description
No electrical connection. Provide an isolated (ungrounded) solder pad for mounting integrity.
RF input pin. This pin requires the use of an external DC-blocking capacitor chosen for the frequency of operation.
Voltage supply connection. Bypass with suitable capacitors.
Connection to ground. Provide via holes as close to ground leads as possible to reduce ground inductance and achieve
optimum RF performance.
RF output and voltage supply. DC voltage is present on this pin, therefore a DC-blocking capacitor is necessary for proper
operation.
Suggested Pad Layout
0.026
0.075
Notes:
1. Provide a ground pad area under device pins 2 & 5
with plated via holes to the PCB ground plane.
2. We recommend 1 or 2 ounce copper. Measure-
ments for this data sheet were made on a 31 mil
thick Getek with 1 ounce copper on both sides.
0.035
0.016
Package Drawing
Dimensions in inches (millimeters)
Refer to drawing posted at www.rfmd.com for tolerances.
4 of 6
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical
support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com.
DS111011
SGL0263Z
1400MHz to 2500MHz Application Circuit
+V
S
Application Circuit Element Values
Delay Elements
Ref.
Des.
Z1
Z2
Z3
Phase shift @
Z
0
2GHz (deg.)
(Ohms)
50
50
50
11
13
6
L
M1
R
B2
C
D1
C
D2
Reference
Designator
L
B
Value
27 nH
1.2 nH
Manufact
urer &
Part No.
TOKO LL1608-FS27NJ
TOKO LL1608-FS1R2NJ
R
B1
(OPT)
B1
(OPT)
B1
1
1500 Ohms FAIR-RITE 2508051527y0
@100 MHz Ferrite Bead
0.1 uF
22 pF
1.0 pF
47 Ohms
0 Ohms
SAMSUNG CL10B103KBNC
ROHM MCH185AA220DJK
ROHM MCH185A1R0CK
PHILLIPS 9C06031A47R0 JL HFT
PHILLIPS 9C06031A0R00 JL HFT
C
B
, C
D1
C
B
RF
INPUT
Z1
C
M1
4
L
M1
Z2
3
SGL0263Z
5
Z3
L
B
6
C
D2
C
B
RF
OUTPUT
C
M1
R
B1
R
B2
1
2
Notes:
1.
B1 and R
B1
provide improved
K-factor but are optional.
2. R
B2
may be introduced as a voltage dropping resistor for use with
supply voltages greater than the desired device bias voltage.
Evaluation Board Layout
SIRENZA
MICRODEVICES
ECB-101761
Rev B
RF
IN
C
B
C
M1
L
M1
SGL0263Z
C
B
L
B
R
B1
RF
OUT
B1
C
D1
C
D2
R
B2
Note:
Circuit board dielectric
material is GETEK,ML200C
+V
S
GND
DS111011
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical
support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com.
5 of 6
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