MMBT5401W
High Voltage Transistor
PNP Silicon
Features
•
NSV Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements; AEC−Q101
Qualified and PPAP Capable
•
These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
MAXIMUM RATINGS
Rating
Collector −Emitter Voltage
Collector −Base Voltage
Emitter −Base Voltage
Collector Current − Continuous
Symbol
V
CEO
V
CBO
V
EBO
I
C
Value
−150
−160
−5.0
−500
Unit
Vdc
Vdc
Vdc
mAdc
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COLLECTOR
3
1
BASE
2
EMITTER
Stresses exceeding those listed in the Maximum Ratings table may damage
the device. If any of these limits are exceeded, device functionality should not
be assumed, damage may occur and reliability may be affected.
SC−70 (SOT−323)
CASE 419
STYLE 3
THERMAL CHARACTERISTICS
Characteristic
Total Device Dissipation
FR− 5 Board (Note 2)
T
A
= 25°C
Derate Above 25°C
Thermal Resistance,
Junction−to−Ambient
Junction and Storage Temperature
Symbol
P
D
Max
400
3.2
R
qJA
T
J
, T
stg
312
−55 to +150
Unit
mW
mW/°C
°C/W
°C
4W
M
G
1
= Specific Device Code
= Date Code*
= Pb−Free Package
4W MG
G
MARKING DIAGRAM
1. FR−5 @ 100 mm
2
, 0.5 oz. copper traces, still air.
2. FR− 5 = 1.0
0.75
0.062 in.
(Note: Microdot may be in either location)
*Date Code orientation and/or overbar may
vary depending upon manufacturing location.
ORDERING INFORMATION
Device
Package
Shipping
†
3000 / Tape &
Reel
MMBT5401WT1G,
SC−70
NSVMMBT5401WT1G (Pb−Free)
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
©
Semiconductor Components Industries, LLC, 2015
1
March, 2015 − Rev. 2
Publication Order Number:
MMBT5401W/D
MMBT5401W
ELECTRICAL CHARACTERISTICS
(T
A
= 25°C unless otherwise noted)
Characteristic
Symbol
Min
Max
Unit
OFF CHARACTERISTICS
Collector −Emitter Breakdown Voltage
(I
C
= −1.0 mAdc, I
B
= 0)
Collector −Base Breakdown Voltage
(I
C
= −100
mAdc,
I
E
= 0)
Emitter −Base Breakdown Voltage
(I
E
= −10
mAdc,
I
C
= 0)
Collector−Base Cutoff Current
(V
CB
= −120 Vdc, I
E
= 0)
(V
CB
= −120 Vdc, I
E
= 0, T
A
= 100°C)
V
(BR)CEO
−150
V
(BR)CBO
−160
V
(BR)EBO
−5.0
I
CBO
−
−
−50
−50
nAdc
mAdc
−
−
Vdc
−
Vdc
Vdc
ON CHARACTERISTICS
DC Current Gain
(I
C
= −1.0 mAdc, V
CE
= −5.0 Vdc)
(I
C
= −10 mAdc, V
CE
= −5.0 Vdc)
(I
C
= −50 mAdc, V
CE
= −5.0 Vdc)
Collector −Emitter Saturation Voltage
(I
C
= −10 mAdc, I
B
= −1.0 mAdc)
(I
C
= −50 mAdc, I
B
= −5.0 mAdc)
Base −Emitter Saturation Voltage
(I
C
= −10 mAdc, I
B
= −1.0 mAdc)
(I
C
= −50 mAdc, I
B
= −5.0 mAdc)
h
FE
50
60
50
V
CE(sat)
−
−
V
BE(sat)
−
−
−1.0
−1.0
−0.2
−0.5
Vdc
−
240
−
Vdc
−
SMALL− SIGNAL CHARACTERISTICS
Current −Gain — Bandwidth Product
(I
C
= −10 mAdc, V
CE
= −10 Vdc, f = 100 MHz)
Output Capacitance
(V
CB
= −10 Vdc, I
E
= 0, f = 1.0 MHz)
Small Signal Current Gain
(I
C
= −1.0 mAdc, V
CE
= −10 Vdc, f = 1.0 kHz)
Noise Figure
(I
C
= −200
mAdc,
V
CE
= −5.0 Vdc, R
S
= 10
W,
f = 1.0 kHz)
f
T
100
C
obo
−
h
fe
40
NF
−
8.0
200
dB
6.0
−
300
pF
MHz
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
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2
MMBT5401W
1000
V
CE
= 5 V
h
FE
, CURRENT GAIN
T
J
= 150°C
T
J
= 25°C
100
T
J
= −55°C
10
0.1
1
10
100
I
C
, COLLECTOR CURRENT (mA)
Figure 1. DC Current Gain
VCE , COLLECTOR-EMITTER VOLTAGE (VOLTS)
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0
0.005
0.01
0.02
0.05
0.1
0.2
0.5
1.0
I
B
, BASE CURRENT (mA)
2.0
5.0
10
20
50
I
C
= 1.0 mA
10 mA
30 mA
100 mA
Figure 2. Collector Saturation Region
10
3
IC, COLLECTOR CURRENT (
μ
A)
10
2
10
1
T
J
= 125°C
10
0
75°C
10
-1
10
-2
10
-3
0.3
REVERSE
25°C
FORWARD
V
CE
= 30 V
I
C
= I
CES
0.2
0.1
0
0.1
0.2 0.3 0.4
0.5
V
BE
, BASE-EMITTER VOLTAGE (VOLTS)
0.6
0.7
Figure 3. Collector Cut−Off Region
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3
MMBT5401W
0.20
V
CE(sat)
, COLLECTOR−EMITTER
SATURATION VOLTAGE (V)
V
BE(sat)
, BASE−EMITTER
SATURATION VOLTAGE (V)
0.18
0.15
0.13 150°C
0.10
0.08
0.05 −55°C
0.03
0
0.0001
0.001
0.01
0.1
I
C
, COLLECTOR CURRENT (A)
25°C
I
C
/I
B
= 10
1.0
I
C
/I
B
= 10
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.0001
0.001
0.01
0.1
I
C
, COLLECTOR CURRENT (A)
150°C
−55°C
25°C
Figure 4. Collector Emitter Saturation Voltage
vs. Collector Current
V
BE(on)
, BASE−EMITTER VOLTAGE (V)
1.1
θ
V, TEMPERATURE COEFFICIENT (mV/
°
C)
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.0001
0.001
0.01
0.1
I
C
, COLLECTOR CURRENT (A)
150°C
25°C
V
CE
= 10 V
−55°C
2.5
2.0
1.5
1.0
0.5
0
-0.5
-1.0
-1.5
-2.0
-2.5
0.1
Figure 5. Base Emitter Saturation Voltage vs.
Collector Current
T
J
= - 55°C to 135°C
q
VC
for V
CE(sat)
q
VB
for V
BE(sat)
0.2 0.3 0.5 1.0 2.0 3.0 5.0
10
20 30
I
C
, COLLECTOR CURRENT (mA)
50
100
Figure 6. Base Emitter Voltage vs. Collector
Current
100
70
50
C, CAPACITANCE (pF)
30
20
10
7.0
5.0
3.0
2.0
1.0
0.2
Figure 7. Temperature Coefficients
T
J
= 25°C
V
BB
+ 8.8 V
10.2 V
V
in
10
ms
INPUT PULSE
t
r
, t
f
≤
10 ns
DUTY CYCLE = 1.0%
0.25
mF
100
R
B
5.1 k
V
in
100
1N914
V
CC
-30 V
3.0 k
R
C
V
out
C
ibo
C
obo
Values Shown are for I
C
@ 10 mA
0.3
2.0 3.0
5.0 7.0
0.5 0.7 1.0
V
R
, REVERSE VOLTAGE (VOLTS)
10
20
Figure 8. Switching Time Test Circuit
Figure 9. Capacitances
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4
MMBT5401W
1000
700
500
300
t, TIME (ns)
200
100
70
50
30
20
10
0.2 0.3 0.5
t
d
@ V
BE(off)
= 1.0 V
V
CC
= 120 V
1.0
2.0 3.0 5.0
10
20 30
50
100
200
2000
I
C
/I
B
= 10
T
J
= 25°C
t
r
@ V
CC
= 120 V
t
r
@ V
CC
= 30 V
t, TIME (ns)
1000
700
500
300
200
100
70
50
30
20
0.2 0.3 0.5
1.0
2.0 3.0 5.0
10
20 30
50
100
200
I
C
/I
B
= 10
T
J
= 25°C
t
f
@ V
CC
= 30 V
t
s
@ V
CC
= 120 V
t
f
@ V
CC
= 120 V
I
C
, COLLECTOR CURRENT (mA)
I
C
, COLLECTOR CURRENT (mA)
Figure 10. Turn−On Time
1000
f
T
, CURRENT−GAIN−BANDWIDTH
PRODUCT (MHz)
V
CE
= 1 V
T
A
= 25°C
I
C
, COLLECTOR CURRENT (A)
1
Figure 11. Turn−Off Time
10 mSec
0.1
100
1 Sec
0.01
10
0.1
1
10
100
I
C
, COLLECTOR CURRENT (A)
0.001
1
10
100
1000
V
CE
, COLLECTOR EMITTER VOLTAGE (V)
Figure 12. Current Gain Bandwidth Product
Figure 13. Safe Operating Area
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