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MT46V32M4TG-6TIT

产品描述DDR DRAM, 32MX4, 0.7ns, CMOS, PDSO66, 0.400 INCH, PLASTIC, TSOP-66
产品类别存储    存储   
文件大小2MB,共82页
制造商Micron Technology
官网地址http://www.mdtic.com.tw/
下载文档 详细参数 全文预览

MT46V32M4TG-6TIT概述

DDR DRAM, 32MX4, 0.7ns, CMOS, PDSO66, 0.400 INCH, PLASTIC, TSOP-66

MT46V32M4TG-6TIT规格参数

参数名称属性值
是否无铅含铅
是否Rohs认证不符合
厂商名称Micron Technology
零件包装代码TSOP
包装说明0.400 INCH, PLASTIC, TSOP-66
针数66
Reach Compliance Codenot_compliant
ECCN代码EAR99
访问模式FOUR BANK PAGE BURST
最长访问时间0.7 ns
其他特性AUTO/SELF REFRESH
最大时钟频率 (fCLK)167 MHz
I/O 类型COMMON
交错的突发长度2,4,8
JESD-30 代码R-PDSO-G66
JESD-609代码e0
长度22.22 mm
内存密度134217728 bit
内存集成电路类型DDR DRAM
内存宽度4
功能数量1
端口数量1
端子数量66
字数33554432 words
字数代码32000000
工作模式SYNCHRONOUS
最高工作温度85 °C
最低工作温度-40 °C
组织32MX4
输出特性3-STATE
封装主体材料PLASTIC/EPOXY
封装代码TSSOP
封装等效代码TSSOP66,.46
封装形状RECTANGULAR
封装形式SMALL OUTLINE, THIN PROFILE, SHRINK PITCH
峰值回流温度(摄氏度)235
电源2.5 V
认证状态Not Qualified
刷新周期4096
座面最大高度1.2 mm
自我刷新YES
连续突发长度2,4,8
最大待机电流0.003 A
最大压摆率0.355 mA
最大供电电压 (Vsup)2.7 V
最小供电电压 (Vsup)2.3 V
标称供电电压 (Vsup)2.5 V
表面贴装YES
技术CMOS
温度等级INDUSTRIAL
端子面层Tin/Lead (Sn/Pb)
端子形式GULL WING
端子节距0.65 mm
端子位置DUAL
处于峰值回流温度下的最长时间30
宽度10.16 mm

文档预览

下载PDF文档
128Mb: x4, x8, x16
DDR SDRAM
DOUBLE DATA RATE
(DDR) SDRAM
Features
• V
DD
= +2.5V ±0.2V, V
DD
Q = +2.5V ±0.2V
• V
DD
= +2.6V ±0.1V, V
DD
Q = +2.6V ±0.1V (DDR 400)
• Bidirectional data strobe (DQS) transmitted/
received with data, i.e., source-synchronous data
capture (x16 has two – one per byte)
• Internal, pipelined double-data-rate (DDR)
architecture; two data accesses per clock cycle
• Differential clock inputs (CK and CK#)
• Commands entered on each positive CK edge
• DQS edge-aligned with data for READs; center-
aligned with data for WRITEs
• DLL to align DQ and DQS transitions with CK
• Four internal banks for concurrent operation
• Data mask (DM) for masking write data (x16 has two
– one per byte)
• Programmable burst lengths: 2, 4, or 8
• Auto Refresh and Self Refresh Modes
• Longer lead TSOP for improved reliability (OCPL)
• 2.5V I/O (SSTL_2 compatible)
• Concurrent auto precharge option is supported
t
RAS lockout supported (
t
RAP =
t
RCD)
OPTIONS
• Configuration
32 Meg x 4 (8 Meg x 4 x 4 banks)
16 Meg x 8 (4 Meg x 8 x 4 banks)
8 Meg x 16 (2 Meg x 16 x 4 banks)
• Plastic Package – OCPL
66-pin TSOP
66-pin TSOP (lead-free)
1
• Plastic Package
60-Ball FBGA (16x9mm)
11
60-Ball FBGA (16x9mm) (lead-free)
1, 11
• Timing – Cycle Time
5ns @ CL = 3 (DDR400)
2, 12
6ns @ CL = 2.5 (DDR333) (FBGA only)
3, 11, 12
6ns @ CL = 2.5 (DDR333) (TSOP only)
3, 4
7.5ns @ CL = 2 (DDR266)
5
7.5ns @ CL = 2 (DDR266A)
6
7.5ns @ CL = 2.5 (DDR266B)
7, 8
• Self Refresh
Standard
Low Power Self Refresh
• Temperature Rating
Standard (0°C to +70°C)
Industrial Temperature (-40°C to +85°C)
MARKING
32M4
16M8
8M16
TG
P
FJ
BJ
-5B
-6
-6T
-75E
-75Z
-75
None
L
None
IT
MT46V32M4 – 8 MEG x 4 x 4 BANKS
MT46V16M8 – 4 MEG x 8 x 4 BANKS
MT46V8M16 – 2 MEG x 16 x 4 BANKS
For the latest data sheet revisions, please refer to the
Micron Web site: www.micron.com/datasheets
Figure 1: Pin Assignment (Top View)
66-pin TSOP
x4
x8
x16
V
DD
V
DD
V
DD
NC
DQ0
DQ0
V
DD
Q V
DD
Q
V
DD
Q
NC
DQ1
NC
DQ0
DQ1
DQ2
V
SS
Q
V
SS
Q
VssQ
NC
DQ3
NC
NC
DQ2
DQ4
V
DD
Q V
DD
Q
V
DD
Q
NC
NC
DQ5
DQ1
DQ3
DQ6
V
SS
Q
V
SS
Q
VssQ
NC
DQ7
NC
NC
NC
NC
V
DD
Q V
DD
Q
V
DD
Q
NC
NC
LDQS
NC
NC
NC
V
DD
V
DD
V
DD
DNU
DNU
DNU
NC
NC
LDM
WE#
WE#
WE#
CAS#
CAS#
CAS#
RAS#
RAS#
RAS#
CS#
CS#
CS#
NC
NC
NC
BA0
BA0
BA0
BA1
BA1
BA1
A10/AP A10/AP A10/AP
A0
A0
A0
A1
A1
A1
A2
A2
A2
A3
A3
A3
V
DD
V
DD
V
DD
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
23
24
25
26
27
28
29
30
31
32
33
66
65
64
63
62
61
60
59
58
57
56
55
54
53
52
51
50
49
48
47
46
45
44
43
42
41
40
39
38
37
36
35
34
x16
V
SS
DQ15
V
SS
Q
DQ14
DQ13
V
DD
Q
DQ12
DQ11
V
SS
Q
DQ10
DQ9
V
DD
Q
DQ8
NC
V
SS
Q
UDQS
DNU
V
REF
V
SS
UDM
CK#
CK
CKE
NC
NC
A11
A9
A8
A7
A6
A5
A4
V
SS
x8
V
SS
DQ7
V
SS
Q
NC
DQ6
V
DD
Q
NC
DQ5
V
SS
Q
NC
DQ4
V
DD
Q
NC
NC
V
SS
Q
DQS
DNU
V
REF
V
SS
DM
CK#
CK
CKE
NC
NC
A11
A9
A8
A7
A6
A5
A4
V
SS
x4
V
SS
NC
V
SS
Q
NC
DQ3
V
DD
Q
NC
NC
V
SS
Q
NC
DQ2
V
DD
Q
NC
NC
V
SS
Q
DQS
DNU
V
REF
V
SS
DM
CK#
CK
CKE
NC
NC
A11
A9
A8
A7
A6
A5
A4
V
SS
32 MEG x 4
Configuration
Refresh Count
Row Addressing
Bank Addressing
Column Addressing
8 Meg x 4 x 4
banks
4K
4K (A0–A11)
4(BA0,BA1)
2K(A0–A9,A11)
16 MEG x 8
4 Meg x 8 x 4
banks
4K
4K (A0–A11)
4(BA0,BA1)
1K(A0–A9)
8 MEG x 16
2 Meg x 16 x 4
banks
4K
4K (A0–A11)
4(BA0,BA1)
512(A0–A8)
Table 1:
Key Timing Parameters
CLOCK RATE
9
DATA-OUT ACCESS DQS–DQ
SPEED
GRADE CL = 2 CL = 2.5 CL = 3
WINDOW
10
WINDOW SKEW
-5B
-6
6T
-75
133 MHz 167 MHz 200 MHz
133 MHz 167 MHz
133 MHz 167 MHz
100 MHz 133 MHz
N/A
N/A
N/A
N/A
1.6ns
2.1ns
2.0ns
2.5ns
2.5ns
±0.70ns
±0.70ns
±0.70ns
±0.75ns
±0.75ns
+0.40ns
+0.40ns
+0.45ns
+0.50ns
+0.50ns
-75E/75Z 133 MHz 133 MHz
NOTE:
1.
2.
3.
4.
5.
6.
7.
8.
9.
10.
Contact Micron for availability of lead-free products.
Supports PC3200 modules with 3-3-3 timing.
Supports PC2700 modules with 2.5-3-3 timing.
-6T is not available in the x16 configuration.
Supports PC2100 modules with 2-2-2 timing.
Supports PC2100 modules with 2-3-3 timing.
Supports PC2100 modules with 2.5-3-3 timing.
Supports PC1600 modules with 2-2-2 timing.
CL = CAS (READ) latency.
Minimum clock rate @ CL = 2 (-75E, -75Z), CL = 2.5 (-6, -6T, -75),
and CL = 3 (-5B).
11. FBGA package is EOL and no longer available.
12. Not available.
09005aef8074a655
128MBDDRx4x8x16_1.fm - Rev. J 7/04 EN
1
©2000 Micron Technology, Inc. All rights reserved.

 
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