DISCRETE SEMICONDUCTORS
DATA SHEET
age
M3D121
BZD142W
ZenBlock
TM
; zener with integrated
blocking diode
Product specification
Supersedes data of 2000 May 01
2001 Oct 10
Philips Semiconductors
Product specification
ZenBlock
TM
; zener with
integrated blocking diode
FEATURES
•
Zener and 600 V/100 ns blocking function in one
package
(1)
•
Protects MOSFETS or power IC controllers such as
TINYSwitch™
(2)
, TOPSwitch™
(2)
and STARplug™
(3)
•
Glass passivated
•
Excellent clamping capability and stability
•
Supplied in 8 mm embossed tape.
handbook, halfpage
BZD142W
MAM433
Fig.1 Simplified outline (SOD87).
DESCRIPTION
(1) Types BZD142W-68,-100 and -160 have a 600 V blocking
diode with a minimum t
rr
of 1000 ns.
(2) TINYSwitch and TOPSwitch are trademarks of Power
Integrations.
(3) STARplug is a trademark of Koninklijke Philips Electronics
N.V.
Cavity free cylindrical glass package through Implotec™
(4)
technology. This package is hermetically sealed and
fatigue free as coefficients of expansion of all used parts
are matched.
(4) Implotec is a trademark of Koninklijke Philips Electronics N.V.
LIMITING VALUES
SYMBOL
T
stg
T
j
P
tot
P
RSM
PARAMETER
storage temperature
junction temperature
T
tp
= 105
°C;
see Fig.2
10/1000
µs
exponential pulse;
T
j
= 25
°C
prior to surge; see Fig.5
CONDITIONS
MIN.
−65
−65
−
−
MAX.
+150
+150
UNIT
°C
°C
W
W
Limiting values zener
total power dissipation
non-repetitive peak reverse power
dissipation
1.5
100
Limiting values blocking diode
V
R
E
RSM
continuous reverse voltage
non-repetitive peak reverse
avalanche energy
L = 120 mH; T
j
= T
j max
prior to
surge; inductive load switched off
−
−
600
7.5
V
mJ
2001 Oct 10
2
Philips Semiconductors
Product specification
ZenBlock
TM
; zener with
integrated blocking diode
ELECTRICAL CHARACTERISTICS ZENER/TVS
T
j
= 25
°C
unless otherwise specified.
WORKING VOLTAGE
TYPE
NUMBER
SUFFIX
(1)
MIN.
68
100
160
180
200
Notes
1. To complete the type number the suffix is added to the basic type number, e.g. BZD142W-68.
61
90
149
162
180
TEMPERATURE
COEFFICIENT
S
Z
(%/K) at I
test
MAX.
75
110
171
198
220
MIN.
0.07
0.07
0.07
0.07
0.07
MAX.
0.12
0.12
0.12
0.12
0.12
10
5
5
5
5
TEST
CURRENT
CLAMPING
VOLTAGE
V
(CL)R
(V)
MAX.
106
139
224
250
277
at I
RSM
(A)
(2)
0.94
0.72
0.45
0.40
0.36
BZD142W
REVERSE CURRENT
at STAND-OFF
VOLTAGE
I
R
(µA)
MAX.
5
5
5
5
5
56
82
130
150
160
at V
R
(V)
V
Z
(V) at I
test
NOM.
68
100
160
180
200
I
test
(mA)
2. Non-repetitive peak reverse current in accordance with
“IEC 60060-1, Section 8”
(10/1000
µs
pulse); see Fig.5.
ELECTRICAL CHARACTERISTICS BLOCKING DIODE
T
j
= 25
°C
unless otherwise specified.
SYMBOL
V
(BR)R
I
R
C
d
PARAMETER
reverse avalanche breakdown
voltage
reverse current
diode capacitance
CONDITIONS
I
R
= 0.1 mA
V
R
= 600 V
V
R
= 600 V; T
j
= 150
°C
f = 1 MHz; V
R
= 0 V;
see Fig.3
MIN.
700
−
−
−
−
−
−
15
TYP.
−
5
100
−
MAX.
V
µA
µA
pF
UNIT
THERMAL CHARACTERISTICS
SYMBOL
R
th j-tp
R
th j-a
Note
1. Device mounted on an epoxy-glass printed-circuit board, 1.5 mm thick; thickness of Cu-layer
≥40 µm,
see Fig.4.
For more information please refer to the
“General Part of associated Handbook”.
PARAMETER
thermal resistance from junction to tie-point
thermal resistance from junction to ambient
note 1
CONDITIONS
VALUE
30
150
UNIT
K/W
K/W
2001 Oct 10
3
Philips Semiconductors
Product specification
ZenBlock
TM
; zener with
integrated blocking diode
GRAPHICAL DATA
BZD142W
handbook, halfpage
3.0
MBL106
handbook, halfpage
10
2
MBL107
P
(W)
2.0
Cd
(pF)
10
1.0
0
0
40
80
120
160
T (°C)
Solid line: tie-point temperature.
Dotted line: ambient temperature;
device mounted (see Fig.4).
200
1
1
10
10
2
VR (V)
10
3
f = 1 MHz; T
j
= 25
°C.
Fig.2
Maximum total power dissipation as a
function of temperature.
Fig.3
Diode capacitance as a function of reverse
voltage; typical values.
IRSM
handbook, halfpage
(%)
50
100
90
4.5
50
2.5
50
10
t
t1
t2
MGD521
1.25
MSB213
In accordance with
“IEC 60060-1, Section 8”.
t
1
= 10
µs.
t
2
= 1000
µs.
Dimensions in mm.
Fig.5
Fig.4 Printed-circuit board for surface mounting.
Non-repetitive peak reverse current pulse
definition.
2001 Oct 10
4
Philips Semiconductors
Product specification
ZenBlock
TM
; zener with
integrated blocking diode
PACKAGE OUTLINE
Hermetically sealed glass surface mounted package;
Implotec
TM(1)
technology; 2 connectors
BZD142W
SOD87
k
(2)
a
D1
D
L
DIMENSIONS (mm are the original dimensions)
UNIT
mm
D
2.1
2.0
D1
2.0
1.8
H
3.7
3.3
L
0.3
H
L
0
1
scale
2 mm
Notes
1. Implotec is a trademark of Philips.
2. The marking indicates the cathode.
OUTLINE
VERSION
SOD87
REFERENCES
IEC
100H03
JEDEC
EIAJ
EUROPEAN
PROJECTION
ISSUE DATE
99-03-31
99-06-04
2001 Oct 10
5
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