Product Specification
www.jmnic.com
Silicon NPN Power Transistors
DESCRIPTION
・With
TO-220F package
・DARLINGTON
APPLICATIONS
・
Low frequency power amplifier
PINNING
PIN
1
2
3
Base
Collector
Emitter
DESCRIPTION
2SD2101
Fig.1 simplified outline (TO-220F) and symbol
Absolute maximum ratings(Ta=25
℃)
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
I
CP
PARAMETER
Collector-base voltage
Collector -emitter voltage
Emitter-base voltage
Collector current
Collector current peak
T
C
=25℃
P
C
Collector power dissipation
T
a
=25℃
T
j
T
stg
Junction temperature
Storage temperature
2
150
-55~150
W
℃
℃
CONDITIONS
Open emitter
Open base
Open collector
VALUE
200
200
7
10
15
30
UNIT
V
V
V
A
A
W
JMnic
Product Specification
www.jmnic.com
Silicon NPN Power Transistors
2SD2101
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
V
EBO
V
CBO
V
CEO
V
CEO(sus)
V
CE(sat)1
V
CE(sat)2
V
BE(sat)1
V
BE(sat)2
I
CBO
I
CEO
h
FE
PARAMETER
Base-emitter voltage
Collector-base voltage
Collector-emitter voltage
Base-emitter voltage
Collector-emitter saturation voltage
Collector-emitter saturation voltage
Base-emitter saturation voltage
Base-emitter saturation voltage
Collector cut-off current
Collector cut-off current
DC current gain
CONDITIONS
I
E
=50mA; I
C
=0
I
C
=0.1mA; I
C
=0
I
C
=25mA;R
BE
=∞
I
C
=5A; L=5mH
I
C
=5A ;I
B
=10mA
I
C
=10A ;I
B
=100mA
I
C
=5A ;I
B
=10mA
I
C
=10A ;I
B
=100mA
V
CB
=180V; I
E
=0
V
CE
=180V; R
BE
=∞
I
C
=5A ; V
CE
=3V
1500
MIN
7
200
200
170
1.5
3.0
2.0
3.5
10
50
TYP.
MAX
UNIT
V
V
V
V
V
V
V
V
μA
μA
JMnic
嵌入式系统
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