DISCRETE SEMICONDUCTORS
DATA SHEET
M3D319
BAP50-02
General purpose PIN diode
Product specification
2001 Apr 17
Philips Semiconductors
Product specification
General purpose PIN diode
FEATURES
•
Low diode capacitance
•
Low diode forward resistance.
APPLICATIONS
•
General RF applications.
DESCRIPTION
General purpose PIN diode in a SOD523 small SMD
plastic package.
handbook, halfpage
BAP50-02
PINNING
PIN
DESCRIPTION
cathode
anode
Marking code:
K4.
Fig.1 Simplified outline (SOD523) and symbol.
2
1
2
Top view
1
MAM405
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
SYMBOL
V
R
I
F
P
tot
T
stg
T
j
PARAMETER
continuous reverse voltage
continuous forward current
total power dissipation
storage temperature
junction temperature
T
s
= 90
°C
CONDITIONS
−
−
−
−65
−65
MIN.
MAX.
50
50
715
+150
+150
UNIT
V
mA
mW
°C
°C
2001 Apr 17
2
Philips Semiconductors
Product specification
General purpose PIN diode
ELECTRICAL CHARACTERISTICS
T
j
= 25
°C
unless otherwise specified.
SYMBOL
V
F
V
R
I
R
C
d
PARAMETER
forward voltage
reverse voltage
reverse current
diode capacitance
CONDITIONS
I
F
= 50 mA
I
R
= 10
µA
V
R
= 50 V
V
R
= 0; f = 1 MHz
V
R
= 1 V; f = 1 MHz
V
R
= 5 V; f = 1 MHz
r
D
diode forward resistance
I
F
= 0.5 mA; f = 100 MHz; note 1
I
F
= 1 mA; f = 100 MHz; note 1
I
F
= 10 mA; f = 100 MHz; note 1
|s
21
|
2
isolation
V
R
= 0; f = 900 MHz
V
R
= 0; f = 1800 MHz
V
R
= 0; f = 2450 MHz
|s
21
|
2
insertion loss
I
F
= 0.5 mA; f = 900 MHz
I
F
= 0.5 mA; f = 1800 MHz
I
F
= 0.5 mA; f = 2450 MHz
|s
21
|
2
insertion loss
I
F
= 1 mA; f = 900 MHz
I
F
= 1 mA; f = 1800 MHz
I
F
= 1 mA; f = 2450 MHz
|s
21
|
2
insertion loss
I
F
= 10 mA; f = 900 MHz
I
F
= 10 mA; f = 1800 MHz
I
F
= 10 mA; f = 2450 MHz
τ
L
charge carrier life time
MIN.
−
50
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
TYP.
0.95
−
−
0.4
0.3
0.22
25
14
3
20.4
17.3
15.5
1.74
1.79
1.88
1.03
1.09
1.15
0.26
0.32
0.34
1.05
BAP50-02
MAX.
1.1
−
100
−
0.55
0.35
40
25
5
−
−
−
−
−
−
−
−
−
−
−
−
−
UNIT
V
V
nA
pF
pF
pF
Ω
Ω
Ω
dB
dB
dB
dB
dB
dB
dB
dB
dB
dB
dB
dB
µs
when switched from I
F
= 10 mA to
−
I
R
= 6 mA; R
L
= 100
Ω;
measured at I
R
= 3 mA
I
F
= 100 mA; f = 100 MHz
−
L
S
Note
series inductance
0.6
−
nH
1. Guaranteed on AQL basis: inspection level S4, AQL 1.0.
THERMAL CHARACTERISTICS
SYMBOL
R
th j-s
PARAMETER
thermal resistance from junction to soldering point
VALUE
85
UNIT
K/W
2001 Apr 17
3
Philips Semiconductors
Product specification
General purpose PIN diode
GRAPHICAL DATA
BAP50-02
handbook, halfpage
10
3
MLD601
handbook, halfpage
600
Cd
MLD602
rD
(Ω)
10
2
(fF)
400
10
200
1
10
−1
1
10
IF (mA)
10
2
0
0
4
8
12
16
VR (V)
20
f = 100 MHz; T
j
= 25
°C.
f = 1 MHz; T
j
= 25
°C.
Fig.2
Forward resistance as a function of
forward current; typical values.
Fig.3
Diode capacitance as a function of
reverse voltage; typical values.
handbook, halfpage
s
2
0
MLD603
21
(dB)
−1
(1)
handbook, halfpage
s
2
0
MLD604
21
(dB)
−5
(2)
−2
(3)
−10
−3
−15
−4
−20
−5
0.5
1
1.5
2
2.5
f (GHz)
3
−25
0.5
1
1.5
2
2.5
f (GHz)
3
(1) I
F
= 10 mA.
(2) I
F
= 1 mA.
(3) I
F
= 0.5 mA.
Diode zero biased and inserted in series with a 50
Ω
stripline circuit.
T
amb
= 25
°C.
Diode inserted in series with a 50
Ω
stripline circuit and
biased via the analyzer Tee network.
T
amb
= 25
°C.
Fig.4
Insertion loss
|s
21
|
2
of the diode in on-state
as a function of frequency; typical values.
Fig.5
Isolation (|s
21
|
2
) of the diode in off-state as a
function of frequency; typical values.
2001 Apr 17
4
Philips Semiconductors
Product specification
General purpose PIN diode
PACKAGE OUTLINE
BAP50-02
Plastic surface mounted package; 2 leads
SOD523
A
c
HE
v
M
A
D
A
0
0.5
scale
1 mm
1
E
bp
2
DIMENSIONS (mm are the original dimensions)
UNIT
mm
A
0.7
0.5
bp
0.35
0.25
c
0.2
0.1
D
1.3
1.1
E
0.9
0.7
HE
1.7
1.5
v
0.15
(1)
Note
1. The marking bar indicates the cathode.
OUTLINE
VERSION
SOD523
REFERENCES
IEC
JEDEC
EIAJ
SC-79
EUROPEAN
PROJECTION
ISSUE DATE
98-11-25
2001 Apr 17
5
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