DISCRETE SEMICONDUCTORS
DATA SHEET
M3D319
BAP1321-02
Silicon PIN diode
Product specification
2001 Apr 17
Philips Semiconductors
Product specification
Silicon PIN diode
FEATURES
•
High voltage, current controlled
•
RF resistor for RF attenuators and switches
•
Low diode capacitance
•
Low diode forward resistance
•
Very low series inductance
•
For applications up to 3 GHz.
handbook, halfpage
BAP1321-02
PINNING
PIN
DESCRIPTION
cathode
anode
APPLICATIONS
•
RF attenuators and switches.
DESCRIPTION
Planar PIN diode in a SOD523 ultra small SMD plastic
package.
Marking code:
K7.
Fig.1 Simplified outline (SOD523) and symbol.
2
1
2
Top view
1
MAM405
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
SYMBOL
V
R
I
F
P
tot
T
stg
T
j
PARAMETER
continuous reverse voltage
continuous forward current
total power dissipation
storage temperature
junction temperature
T
s
≤
90
°C
CONDITIONS
MIN.
−
−
−
−65
−65
MAX.
60
100
715
+150
+150
UNIT
V
mA
mW
°C
°C
2001 Apr 17
2
Philips Semiconductors
Product specification
Silicon PIN diode
ELECTRICAL CHARACTERISTICS
T
j
= 25
°C
unless otherwise specified.
SYMBOL
V
F
I
R
C
d
PARAMETER
forward voltage
reverse leakage current
diode capacitance
I
F
= 50 mA
V
R
= 60 V
V
R
= 0; f = 1 MHz
V
R
= 1 V; f = 1 MHz
V
R
= 20 V; f = 1 MHz
r
D
diode forward resistance
f = 100 MHz; note 1
I
F
= 0.5 mA
I
F
= 1 mA
I
F
= 10 mA
I
F
= 100 mA
|s
21
|
2
isolation
V
R
= 0; f = 900 MHz
V
R
= 0; f = 1800 MHz
V
R
= 0; f = 2450 MHz
|s
21
|
2
insertion loss
I
F
= 0.5 mA; f = 900 MHz
I
F
= 0.5 mA; f = 1800 MHz
I
F
= 0.5 mA; f = 2450 MHz
|s
21
|
2
insertion loss
I
F
= 1 mA; f = 900 MHz
I
F
= 1 mA; f = 1800 MHz
I
F
= 1 mA; f = 2450 MHz
|s
21
|
2
insertion loss
I
F
= 10 mA; f = 900 MHz
I
F
= 10 mA; f = 1800 MHz
I
F
= 10 mA; f = 2450 MHz
|s
21
|
2
insertion loss
I
F
= 100 mA; f = 900 MHz
I
F
= 100 mA; f = 1800 MHz
I
F
= 100 mA; f = 2450 MHz
τ
L
L
S
Note
1. Guaranteed on AQL basis: inspection level S4, AQL 1.0.
THERMAL CHARACTERISTICS
SYMBOL
R
th j-s
PARAMETER
thermal resistance from junction to soldering point
charge carrier life time
series inductance
when switched from I
F
= 10 mA to I
R
= 6 mA;
R
L
= 100
Ω;
measured at I
R
= 3 mA
I
F
= 100 mA; f = 100 MHz
CONDITIONS
BAP1321-02
TYP.
0.95
−
0.4
0.35
0.25
3.4
2.4
1.2
0.85
16.3
11.4
9.2
0.23
0.27
0.33
0.18
0.22
0.27
0.10
0.16
0.20
0.08
0.13
0.18
0.5
0.6
MAX.
1.1
100
−
0.45
0.32
5.0
3.6
1.8
1.3
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
UNIT
V
nA
pF
pF
pF
Ω
Ω
Ω
Ω
dB
dB
dB
dB
dB
dB
dB
dB
dB
dB
dB
dB
dB
dB
dB
µs
nH
VALUE
85
UNIT
K/W
2001 Apr 17
3
Philips Semiconductors
Product specification
Silicon PIN diode
GRAPHICAL DATA
BAP1321-02
handbook, halfpage
10
MLD591
handbook, halfpage
rD
(Ω)
500
Cd
MLD592
(fF)
400
300
1
200
100
10
−1
10
−1
1
10
IF (mA)
10
2
0
0
4
8
12
16
VR (V)
f = 1 MHz; T
j
= 25
°C.
20
f = 100 MHz; T
j
= 25
°C.
Fig.2
Forward resistance as a function of
forward current; typical values.
Fig.3
Diode capacitance as a function of reverse
voltage; typical values.
handbook, halfpage
s
2
0
MLD595
21
handbook, halfpage
s
2
(1)
(2)
(3)
0
MLD594
(
dB
)
21
−0.1
(
dB
)
−10
−0.2
(4)
−20
−0.3
−30
−0.4
−0.5
0
1
2
(3) I
F
= 1 mA.
(4) I
F
= 0.5 mA.
f (GHz)
3
−40
0
1
2
f (GHz)
3
(1) I
F
= 100 mA.
(2) I
F
= 10 mA.
Diode inserted in series with a 50
Ω
stripline circuit
and biased via the analyzer Tee network.
T
amb
= 25
°C.
Diode zero biased and inserted in series with a 50
Ω
stripline circuit.
T
amb
= 25
°C.
Fig.4
Insertion loss (|s
21
|
2
) of the diode as a
function of frequency; typical values.
Fig.5
Isolation (|s
21
|
2
) of the diode as a function
of frequency; typical values.
2001 Apr 17
4
Philips Semiconductors
Product specification
Silicon PIN diode
PACKAGE OUTLINE
Plastic surface mounted package; 2 leads
BAP1321-02
SOD523
A
c
HE
v
M
A
D
A
0
0.5
scale
1 mm
1
E
bp
2
DIMENSIONS (mm are the original dimensions)
UNIT
mm
A
0.7
0.5
bp
0.35
0.25
c
0.2
0.1
D
1.3
1.1
E
0.9
0.7
HE
1.7
1.5
v
0.15
(1)
Note
1. The marking bar indicates the cathode.
OUTLINE
VERSION
SOD523
REFERENCES
IEC
JEDEC
EIAJ
SC-79
EUROPEAN
PROJECTION
ISSUE DATE
98-11-25
2001 Apr 17
5
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