ESD Protection Diode
CDZC6.8B
Applications
ESD Protection
Dimensions（Unit
: mm
）
Land size figure(Unit
: mm)
Features
1)Ultra small mold type.
（VMN2）
2)High reliability
3)Ultra low Capacitance
Construction
Silicon epitaxial planar
Structure
Taping specifications（Unit
: mm
）
Absolute maximum ratings
（Ta=25℃）
Parameter
Symbol
Power dissipation
P
Junction temperature
T
j
Storage temperature
Tstg
Limits
100
150
-55 to +150
Unit
mW
℃
℃
Electical voltage（Ta=25℃）
Parameter
Zener voltage
Reverse current
Capacitance between terminals
Symbol
V
Z
I
R
Ct
Min.
6.65
-
-
Typ.
-
-
3
Max.
6.93
0.50
-
Unit
V
µA
pF
Conditions
I
Z
=5mA
V
R
=3.5V
V
R
=0V , f=1MHz
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©2009 ROHM Co., Ltd. All rights reserved.
1/2
2009.12 - Rev.A
CDZC6.8B
Electrical characteristic curves
10
10000
Data Sheet
Ta=125°C
10
REVERSE CURRENT:I
R
(nA)
Ta=25°C
ZENER CURRENT:Iz(mA)
1
Ta=75°C
1000
Ta=75°C
CAPACITANCE BETWEEN
TERMINALS:Ct(pF)
f=1MH½
Ta=125°C
Ta=−25°C
Ta=25°C
0.1
100
Ta=−25°C
0.01
5
5.5
6
6.5
7
7.5
8
ZENER VOLTAGE : Vz(V)
Vz-Iz CHARACTERISTICS
10
0
0.5
1
1.5
2
2.5
3
3.5
REVERSE VOLTAGE : V
R
(V)
V
R
-I
R
CHARACTERISTICS
1
0
0.5
1
1.5
2
2.5
3
3.5
REVERSE VOLTAGE : V
R
(V)
V
R
-Ct CHARACTERISTICS
7
Ta=25°C
IZ=5mA
n=30pcs
10
9
REVERSE CURRENT:I
R
(nA)
8
7
6
5
4
3
2
1
AVE:0.334nA
Ta=25°C
V
R
=3.5V
n=30pcs
10
9
CAPACITANCE BETWEEN
TERMINALS:Ct(pF)
8
7
6
5
4
3
2
1
0
AVE:2.87pF
Ta=25°C
f=1MHz
V
R
=0V
n=10pcs
ZENER VOLTAGE:Vz(V)
6.9
6.8
6.7
AVE:6.752V
6.6
6.5
Vz DISPERSION MAP
0
I
R
DISPERSION MAP
Ct DISPERSION MAP
100
DYNAMIC IMPEDANCE:Zz(Ω)
10
1
0.1
1
ZENER CURRENT : Iz(mA)
Zz-Iz CHARACTERISTICS
10
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©2009 ROHM Co., Ltd. All rights reserved.
2/2
2009.12 - Rev.A
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