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MT5VDDT872HIY-265XX

产品描述DDR DRAM Module, 8MX72, 0.75ns, CMOS, LEAD FREE, SODIMM-200
产品类别存储    存储   
文件大小831KB,共39页
制造商Micron Technology
官网地址http://www.mdtic.com.tw/
标准
下载文档 详细参数 全文预览

MT5VDDT872HIY-265XX概述

DDR DRAM Module, 8MX72, 0.75ns, CMOS, LEAD FREE, SODIMM-200

MT5VDDT872HIY-265XX规格参数

参数名称属性值
是否无铅不含铅
是否Rohs认证符合
厂商名称Micron Technology
零件包装代码SODIMM
包装说明DIMM,
针数200
Reach Compliance Codecompliant
ECCN代码EAR99
访问模式SINGLE BANK PAGE BURST
最长访问时间0.75 ns
其他特性AUTO/SELF REFRESH
JESD-30 代码R-XZMA-N200
JESD-609代码e4
内存密度603979776 bit
内存集成电路类型DDR DRAM MODULE
内存宽度72
功能数量1
端口数量1
端子数量200
字数8388608 words
字数代码8000000
工作模式SYNCHRONOUS
最高工作温度85 °C
最低工作温度-40 °C
组织8MX72
封装主体材料UNSPECIFIED
封装代码DIMM
封装形状RECTANGULAR
封装形式MICROELECTRONIC ASSEMBLY
峰值回流温度(摄氏度)260
认证状态Not Qualified
自我刷新YES
最大供电电压 (Vsup)2.7 V
最小供电电压 (Vsup)2.3 V
标称供电电压 (Vsup)2.5 V
表面贴装NO
技术CMOS
温度等级INDUSTRIAL
端子面层Gold (Au)
端子形式NO LEAD
端子位置ZIG-ZAG
处于峰值回流温度下的最长时间30

文档预览

下载PDF文档
64MB, 128MB, 256MB: (x72, ECC, SR) 200-Pin DDR SODIMM
Features
DDR SDRAM Small-Outline DIMM
MT5VDDT872H(I) – 64MB
MT5VDDT1672H(I) – 128MB
MT5VDDT3272H(I) – 256MB
For the latest data sheet, please refer to the Micron
®
Web site:
www.micron.com/products/modules
Features
• 200-pin, small-outline dual in-line memory module
(DDR SODIMM)
• Fast data transfer rates: PC2100, or PC2700
• Utilizes 266 MT/s and 333 MT/s DDR SDRAM
components
• 64MB (8 Meg x 72), 128MB (16 Meg x 72), and
256MB (128 Meg x 32)
• Supports ECC error detection and correction
• V
DD
= V
DD
Q= +2.5V
• V
DDSPD
= +2.3V to +3.6V
• 2.5V I/O (SSTL_2 compatible)
• Commands entered on each positive CK edge
• DQS edge-aligned with data for READs; center-
aligned with data for WRITEs
• Internal, pipelined double data rate (DDR)
architecture; two data accesses per clock cycle
• Bidirectional data strobe (DQS) transmitted/
received with data—i.e., source-synchronous data
capture
• Differential clock inputs (CK and CK#)
• Four internal device banks for concurrent operation
• Selectable burst lengths: 2, 4, or 8
• Auto precharge option
• Auto Refresh and Self Refresh Modes 15.625µs
(64MB); 7.8125µs (128MB, 256MB) maximum
average periodic refresh interval
• Serial Presence Detect (SPD) with EEPROM
• Selectable READ CAS latency for maximum
compatibility
• Gold edge contacts
Figure 1:
200-Pin SODIMM (MO-224)
64MB
1.25in. (31.75mm)
128MB, 256MB 1.25in. (31.75mm)
Options
Marking
• Operating temperature
Commercial (0°C
T
A
+70°C)
None
Industrial (-40°C
T
A
+85°C)
I
• Package
200-pin SODIMM (standard)
G
1
200-pin SODIMM (lead-free)
Y
2
• Memory clock, frequency, CAS latency
6ns (167 MHz), 333 MT/s, CL = 2.5
-335
7.5ns (133 MHz), 266 MT/s, CL = 2
-262
1
7.5ns (133 MHz), 266 MT/s, CL = 2
-26A
1
7.5ns (133 MHz), 266 MT/s, CL = 2.5
-265
1
• PCB Height
1.25in. (31.75mm)
Notes: 1. Consult factory for product availability.
Shown for legacy products and backwards
compatibility; not recommended for new
designs.
2. CL = Device CAS (READ) latency.
pdf: 09005aef80a8e793, source: 09005aef80a8e767
DD5C8_16_32x72H_1.fm - Rev. E 8/05 EN
1
Micron Technology, Inc., reserves the right to change products or specifications without notice.
©2004 Micron Technology, Inc. All rights reserved.
Products and specifications discussed herein are subject to change by Micron without notice.

 
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