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2N708: 产品描述Small Signal Bipolar Transistor, 15V V(BR)CEO, 1-Element, NPN, Silicon, TO-18,; 产品类别分立半导体晶体管; 文件大小92KB，共1页; 制造商CDIL[Continental Device India Pvt. Ltd.]

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2N708概述

Small Signal Bipolar Transistor, 15V V(BR)CEO, 1-Element, NPN, Silicon, TO-18,

2N708规格参数

参数名称	属性值
是否Rohs认证	不符合
包装说明	CYLINDRICAL, O-MBCY-W3
Reach Compliance Code	compli
基于收集器的最大容量	6 pF
集电极-发射极最大电压	15 V
配置	SINGLE
最小直流电流增益 (hFE)	30
JEDEC-95代码	TO-18
JESD-30 代码	O-MBCY-W3
JESD-609代码	e0
元件数量	1
端子数量	3
最高工作温度	200 °C
封装主体材料	METAL
封装形状	ROUND
封装形式	CYLINDRICAL
极性/信道类型	NPN
最大功率耗散 (Abs)	0.36 W
认证状态	Not Qualified
表面贴装	NO
端子面层	Tin/Lead (Sn/Pb)
端子形式	WIRE
端子位置	BOTTOM
晶体管元件材料	SILICON
标称过渡频率 (fT)	300 MHz
最大关闭时间（toff）	70 ns
VCEsat-Max	0.4 V
Base Number Matches	1

2N708相似产品对比

	2N708	2N834	2N3117	2N720A	2N2586	2N6430	2N3647	2N718	2N911	2N720
描述	Small Signal Bipolar Transistor, 15V V(BR)CEO, 1-Element, NPN, Silicon, TO-18,	Small Signal Bipolar Transistor, 0.2A I(C), 20V V(BR)CEO, 1-Element, NPN, Silicon, TO-18	Small Signal Bipolar Transistor, 0.05A I(C), 60V V(BR)CEO, 1-Element, NPN, Silicon, TO-18,	Small Signal Bipolar Transistor, 80V V(BR)CEO, 1-Element, NPN, Silicon, TO-18,	Small Signal Bipolar Transistor, 0.03A I(C), 45V V(BR)CEO, 1-Element, NPN, Silicon, TO-18	Small Signal Bipolar Transistor, 0.05A I(C), 200V V(BR)CEO, 1-Element, NPN, Silicon, TO-18,	Small Signal Bipolar Transistor, 0.5A I(C), 10V V(BR)CEO, 1-Element, NPN, Silicon, TO-18	Small Signal Bipolar Transistor, 0.5A I(C), 30V V(BR)CEO, 1-Element, NPN, Silicon, TO-18	Small Signal Bipolar Transistor, 0.5A I(C), 60V V(BR)CEO, 1-Element, NPN, Silicon, TO-18	Small Signal Bipolar Transistor, 0.4A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon, TO-18
是否Rohs认证	不符合	不符合	不符合	符合	不符合	不符合	不符合	不符合	不符合	符合
包装说明	CYLINDRICAL, O-MBCY-W3	CYLINDRICAL, O-MBCY-W3	CYLINDRICAL, O-MBCY-W3	CYLINDRICAL, O-MBCY-W3	CYLINDRICAL, O-MBCY-W3	CYLINDRICAL, O-MBCY-W3	CYLINDRICAL, O-MBCY-W3	CYLINDRICAL, O-MBCY-W3	CYLINDRICAL, O-MBCY-W3	CYLINDRICAL, O-MBCY-W3
Reach Compliance Code	compli	compli	compli	compli	compli	compli	compli	compliant	compliant	compli
集电极-发射极最大电压	15 V	20 V	60 V	80 V	45 V	200 V	10 V	30 V	60 V	80 V
配置	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE
最小直流电流增益 (hFE)	30	25	400	40	80	50	25	40	15	40
JEDEC-95代码	TO-18	TO-18	TO-18	TO-18	TO-18	TO-18	TO-18	TO-18	TO-18	TO-18
JESD-30 代码	O-MBCY-W3	O-MBCY-W3	O-MBCY-W3	O-MBCY-W3	O-MBCY-W3	O-MBCY-W3	O-MBCY-W3	O-MBCY-W3	O-MBCY-W3	O-MBCY-W3
元件数量	1	1	1	1	1	1	1	1	1	1
端子数量	3	3	3	3	3	3	3	3	3	3
最高工作温度	200 °C	175 °C	200 °C	200 °C	200 °C	200 °C	200 °C	175 °C	200 °C	175 °C
封装主体材料	METAL	METAL	METAL	METAL	METAL	METAL	METAL	METAL	METAL	METAL
封装形状	ROUND	ROUND	ROUND	ROUND	ROUND	ROUND	ROUND	ROUND	ROUND	ROUND
封装形式	CYLINDRICAL	CYLINDRICAL	CYLINDRICAL	CYLINDRICAL	CYLINDRICAL	CYLINDRICAL	CYLINDRICAL	CYLINDRICAL	CYLINDRICAL	CYLINDRICAL
极性/信道类型	NPN	NPN	NPN	NPN	NPN	NPN	NPN	NPN	NPN	NPN
最大功率耗散 (Abs)	0.36 W	0.3 W	0.36 W	0.5 W	0.3 W	0.5 W	2 W	0.4 W	0.5 W	0.4 W
认证状态	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified
表面贴装	NO	NO	NO	NO	NO	NO	NO	NO	NO	NO
端子形式	WIRE	WIRE	WIRE	WIRE	WIRE	WIRE	WIRE	WIRE	WIRE	WIRE
端子位置	BOTTOM	BOTTOM	BOTTOM	BOTTOM	BOTTOM	BOTTOM	BOTTOM	BOTTOM	BOTTOM	BOTTOM
晶体管元件材料	SILICON	SILICON	SILICON	SILICON	SILICON	SILICON	SILICON	SILICON	SILICON	SILICON
标称过渡频率 (fT)	300 MHz	350 MHz	60 MHz	50 MHz	45 MHz	50 MHz	350 MHz	50 MHz	50 MHz	50 MHz
基于收集器的最大容量	6 pF	4 pF	4.5 pF	15 pF	2 pF	4 pF	-	35 pF	-	20 pF
JESD-609代码	e0	e0	e0	-	e0	e0	e0	e0	e0	-
端子面层	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)	-	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)	-
VCEsat-Max	0.4 V	0.4 V	0.35 V	5 V	0.5 V	0.5 V	-	1.5 V	1.2 V	5 V
Base Number Matches	1	1	1	1	1	1	1	1	-	-
ECCN代码	-	EAR99	EAR99	-	EAR99	EAR99	EAR99	EAR99	EAR99	EAR99
最大集电极电流 (IC)	-	0.2 A	0.05 A	-	0.03 A	0.05 A	0.5 A	0.5 A	0.5 A	0.4 A

2N708

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2N708概述

2N708规格参数

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