Data Sheet
Schottky Barrier Diode
RBQ30T65A
lApplications
General rectification
lDimensions
(Unit : mm)
4.5±0.3
0.1
10.0±0.3
0.1
2.8±0.2
0.1
lStructure
①
1.3
0.8
(1) (2) (3)
13.5MIN
lConstruction
Silicon epitaxial planer
1.2
5.0±0.2
8.0±0.2
12.0±0.2
15.0±0.4
0.2
8.0
0.7±0.1
0.05
lFeatures
1)Cathode common type.
2)Low I
R
3)High reliability
2.6±0.5
ROHM : TO220FN
①
Manufacture Date
lAbsolute
maximum ratings
(Tc=25C)
Parameter
Symbol
V
RM
Reverse voltage (repetitive)
V
R
Reverse voltage (DC)
Average rectified forward current (*1)
Io
I
FSM
Forward current surge peak (60Hz・1cyc)
Junction temperature
Tj
Storage temperature
(*1) Rating of per diode : Io/2
lElectrical
characteristics
(Tj=25°C)
Parameter
Forward voltage
Reverse current
Symbol
V
F
I
R
Min.
-
-
Tstg
Limits
65
65
30
100
150
-40
to
+150
Unit
V
V
A
A
°C
°C
Typ.
-
-
Max.
0.69
450
Unit
V
μA
I
F
=15A
V
R
=65V
Conditions
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© 2011 ROHM Co., Ltd. All rights reserved.
1/4
2011.11 - Rev.A
RBQ30T65A
Data Sheet
100
100000
Ta=150°C
10000
FORWARD CURRENT:I
F
(A)
10
Ta=125°C
Ta=150°C
REVERSE CURRENT:IR(mA)
1000
100
Ta=125°C
1
Ta=75°C
Ta=75°C
10
Ta=25°C
0.1
Ta=-25°C
1
Ta=25°C
0.1
Ta=-25°C
0.01
0
100
200
300
400
500
600
700
800
900
0.01
0
5 10 15 20 25 30 35 40 45 50 55 60 65 70
REVERSE VOLTAGE：V
R
(V)
V
R
-I
R
CHARACTERISTICS
FORWARD VOLTAGE：V
F
(mV)
V
F
-I
F
CHARACTERISTICS
10000
CAPACITANCE BETWEEN TERMINALS:Ct(pF)
f=1MHz
FORWARD VOLTAGE:V
F
(mV)
700
690
680
670
660
650
640
630
620
610
AVE:645.4mV
Ta=25°C
I
F
=15A
n=30pcs
1000
100
10
1
0
5
10
15
20
25
30
600
REVERSE VOLTAGE:V
R
(V)
V
R
-Ct CHARACTERISTICS
V
F
DISPERSION MAP
100
CAPACITANCE BETWEEN TERMINALS:Ct(pF)
1300
1290
1280
1270
1260
1250
1240
1230
1220
1210
1200
AVE:1225.8pF
Ta=25°C
f=1MHz
V
R
=0V
n=10pcs
80
REVERSE CURRENT:I
R
(mA)
Ta=25°C
V
R
=65V
n=30pcs
AVE:40.08mA
60
40
20
0
I
R
DISPERSION MAP
Ct DISPERSION MAP
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© 2011 ROHM Co., Ltd. All rights reserved.
2/4
2011.11 - Rev.A
RBQ30T65A
Data Sheet
500
450
PEAK SURGE
FORWARD CURRENT:I
FSM
(A)
400
350
300
250
200
150
100
50
0
I
FSM
DISRESION MAP
REVERSE RECOVERY TIME:trr(ns)
I
FSM
1cyc
8.3ms
30
Ta=25°C
I
F
=0.5A
I
R
=1A
Irr=0.25*I
R
n=10pcs
AVE:16.1ns
25
20
15
10
5
0
trr DISPERSION MAP
500
450
PEAK SURGE
FORWARD CURRENT:I
FSM
(A)
PEAK SURGE
FORWARD CURRENT:I
FSM
(A)
400
350
300
250
200
150
100
50
0
1
10
NUMBER OF CYCLES
I
FSM
-CYCLE CHARACTERISTICS
100
I
FSM
8.3ms
1cyc
8.3ms
500
450
400
350
300
250
200
150
100
50
0
1
10
TIME:t(ms)
I
FSM
-t CHARACTERISTICS
100
I
FSM
t
100
40
35
TRANSIENT
THERMAL IMPEDANCE:Rth (°C/W)
Rth(j-a)
10
FORWARD POWER
DISSIPATION:Pf(W)
30
25
20
15
10
DC
5
0.01
0.001
0
0.01
0.1
1
10
100
1000
0
10
20
30
40
50
D=1/2
Sin(q＝180)
Rth(j-c)
1
0.1
TIME:t(s)
Rth-t CHARACTERISTICS
AVERAGE RECTIFIED
FORWARD CURRENT：Io(A)
Io-Pf CHARACTERISTICS
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© 2011 ROHM Co., Ltd. All rights reserved.
3/4
2011.11 - Rev.A
RBQ30T65A
Data Sheet
7
60
0A
Io
t
40
D=1/2
30
DC
T
V
R
D=t/T
V
R
=30V
Tj=150°C
6
AVERAGE RECTIFIED
FORWARD CURRENT:Io(A)
50
0V
REVERSE POWER
DISSIPATION:P
R
(W)
5
4
3
DC
20
2
Sin(q＝180)
D=1/2
1
10
Sin(q＝180)
0
0
10
20
30
40
50
60
70
0
0
25
50
75
100
125
150
REVERSE VOLTAGE:V
R
(V)
V
R
-P
R
CHARACTERISTICS
AMBIENT TEMPERATURE:Ta(°C)
DERATING CURVE(Io-Ta)
80
Io
70
AVERAGE RECTIFIED
FORWARD CURRENT:Io(A)
60
DC
50
40
30
20
10
0
0
25
50
75
100
125
150
D=1/2
0A
0V
t
T
V
R
D=t/T
V
R
=30V
Tj=150°C
30
No break at 30kV
25
ELECTROSTATIC
DISCHARGE TEST ESD(KV)
20
15
10
AVE:5.9kV
5
Sin(q＝180)
0
C=200pF
R=0W
C=100pF
R=1.5kW
CASE TEMPERATURE:Tc(°C)
DERATING CURVE(Io-Tc)
ESD DISPERSION MAP
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© 2011 ROHM Co., Ltd. All rights reserved.
4/4
2011.11 - Rev.A
Notice
Notes
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http://www.rohm.com/contact/
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© 2011 ROHM Co., Ltd. All rights reserved.
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