Data Sheet
Schottky Barrier Diode
RBQ20T65A
lApplications
General rectification
lDimensions
(Unit : mm)
4.5±0.3
0.1
10.0±0.3
0.1
2.8±0.2
0.1
lStructure
①
1.2
lConstruction
Silicon epitaxial planer
5.0±0.2
8.0±0.2
12.0±0.2
lFeatures
1)Cathode common type.
2)Low I
R
3)High reliability
1.3
0.8
(1) (2) (3)
13.5MIN
15.0±0.4
0.2
8.0
0.7±0.1
0.05
2.6±0.5
ROHM : TO220FN
Manufacture Date
①
lAbsolute
maximum ratings
(Tc=25C)
Parameter
Symbol
V
RM
Reverse voltage (repetitive)
Reverse voltage (DC)
V
R
Average rectified forward current (*1)
Io
I
FSM
Forward current surge peak (60Hz・1cyc)
Junction temperature
Tj
Storage temperature
Tstg
(*1) Rating of per diode : Io/2
Limits
65
65
20
100
150
-40
to
+150
Unit
V
V
A
A
°C
°C
lElectrical
characteristics
(Tj=25°C)
Parameter
Forward voltage
Reverse current
Symbol
V
F
I
R
Min.
-
-
Typ.
-
-
Max.
0.69
300
Unit
V
mA
I
F
=10A
V
R
=65V
Conditions
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© 2011 ROHM Co., Ltd. All rights reserved.
1/4
2011.11 - Rev.A
RBQ20T65A
Data Sheet
100
100000
Ta=150°C
10000
REVERSE CURRENT:I
R
(mA)
FORWARD CURRENT:I
F
(A)
10
Ta=125°C
Ta=150°C
1
Ta=75°C
1000
Ta=125°C
100
Ta=75°C
10
0.1
Ta=25°C
1
Ta=25°C
Ta=-25°C
0.01
0
100
200
300
400
500
600
700
800
0.1
Ta=-25°C
0.01
0
5 10 15 20 25 30 35 40 45 50 55 60 65 70
REVERSE VOLTAGE：V
R
(V)
V
R
-I
R
CHARACTERISTICS
FORWARD VOLTAGE：V
F
(mV)
V
F
-I
F
CHARACTERISTICS
10000
CAPACITANCE BETWEEN TERMINALS:Ct(pF)
f=1MHz
650
640
FORWARD VOLTAGE:V
F
(mV)
630
620
610
600
590
580
570
560
AVE:610.4mV
Ta=25°C
I
F
=10A
n=30pcs
1000
100
10
1
0
5
10
15
20
25
30
550
V
F
DISPERSION MAP
REVERSE VOLTAGE:V
R
(V)
V
R
-Ct CHARACTERISTICS
50
CAPACITANCE BETWEEN TERMINALS:Ct(pF)
Ta=25°C
V
R
=65V
n=30pcs
950
940
930
920
910
900
890
880
870
860
850
Ct DISPERSION MAP
AVE:902pF
Ta=25°C
f=1MHz
V
R
=0V
n=10pcs
40
REVERSE CURRENT:I
R
(mA)
AVE:25.41mA
30
20
10
0
I
R
DISPERSION MAP
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© 2011 ROHM Co., Ltd. All rights reserved.
2/4
2011.11 - Rev.A
RBQ20T65A
Data Sheet
500
450
PEAK SURGE
FORWARD CURRENT:I
FSM
(A)
400
350
300
250
200
150
100
50
0
I
FSM
DISRESION MAP
AVE:236A
I
FSM
1cyc
8.3ms
REVERSE RECOVERY TIME:trr(ns)
30
Ta=25°C
I
F
=0.5A
I
R
=1A
Irr=0.25*I
R
n=10pcs
25
20
15
10
AVE:13.3ns
5
0
trr DISPERSION MAP
500
450
I
FSM
PEAK SURGE
FORWARD CURRENT:I
FSM
(A)
PEAK SURGE
FORWARD CURRENT:I
FSM
(A)
400
350
300
250
200
150
100
50
0
1
10
NUMBER OF CYCLES
I
FSM
-CYCLE CHARACTERISTICS
100
8.3ms
8.3ms
1cyc
500
450
400
350
300
250
200
150
100
50
0
1
10
TIME:t(ms)
I
FSM
-t CHARACTERISTICS
100
I
FSM
t
100
25
TRANSIENT
THERMAL IMPEDANCE:Rth (°C/W)
Rth(j-a)
10
FORWARD POWER
DISSIPATION:Pf(W)
20
D=1/2
15
Sin(q＝180)
10
1
Rth(j-c)
0.1
5
DC
0.01
0.001
0
0.01
0.1
1
10
100
1000
0
10
20
30
40
TIME:t(s)
Rth-t CHARACTERISTICS
AVERAGE RECTIFIED
FORWARD CURRENT：Io(A)
Io-Pf CHARACTERISTICS
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© 2011 ROHM Co., Ltd. All rights reserved.
3/4
2011.11 - Rev.A
RBQ20T65A
Data Sheet
10
40
35
0A
0V
AVERAGE RECTIFIED
FORWARD CURRENT:Io(A)
30
D=1/2
25
20
15
10
5
DC
t
V
R
D=t/T
T V
R
=30V
Tj=150°C
Io
8
REVERSE POWER
DISSIPATION:P
R
(W)
DC
6
D=1/2
4
Sin(q＝180)
2
Sin(q＝180)
0
0
10
20
30
40
50
60
70
0
0
25
50
75
100
125
150
REVERSE VOLTAGE:V
R
(V)
V
R
-P
R
CHARACTERISTICS
AMBIENT TEMPERATURE:Ta(°C)
DERATING CURVE(Io-Ta)
50
45
40
AVERAGE RECTIFIED
FORWARD CURRENT:Io(A)
35
30
D=1/2
25
20
15
Sin(q＝180)
10
5
0
0
25
50
75
100
125
150
DC
T
Io
0A
0V
t
V
R
D=t/T
V
R
=30V
Tj=150°C
30
25
ELECTROSTATIC
DISCHARGE TEST ESD(KV)
AVE:18.6kV
20
15
10
AVE:5.8kV
5
0
C=200pF
R=0W
ESD DISPERSION MAP
C=100pF
R=1.5kW
CASE TEMPERATURE:Tc(°C)
DERATING CURVE(Io-Tc)
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© 2011 ROHM Co., Ltd. All rights reserved.
4/4
2011.11 - Rev.A
Notice
Notes
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http://www.rohm.com/contact/
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