Data Sheet
Schottky Barrier Diode
RBQ10T65A
lApplications
General rectification
lDimensions
(Unit : mm)
4.5±0.3
0.1
10.0±0.3
0.1
2.8±0.2
0.1
lStructure
lFeatures
1)Cathode common type.
2)Low I
R
3)High reliability
1.2
1.3
0.8
(1) (2) (3)
①
5.0±0.2
8.0±0.2
12.0±0.2
lConstruction
Silicon epitaxial planer
13.5MIN
15.0±0.4
0.2
8.0
0.7±0.1
0.05
2.6±0.5
ROHM : TO220FN
①
Manufacture Date
lAbsolute
maximum ratings
(Tc=25C)
Parameter
Symbol
V
RM
Reverse voltage (repetitive)
V
R
Reverse voltage (DC)
Average rectified forward current (*1)
Io
I
FSM
Forward current surge peak
（60Hz・1cyc）
Junction temperature
Tj
Storage temperature
Tstg
(*1) Rating of per diode : Io/2
lElectrical
characteristics
(Tj=25C)
Parameter
Symbol
V
F
Forward voltage
Reverse current
I
R
Limits
65
65
10
50
150
-40
to
+150
Unit
V
V
A
A
C
C
Min.
-
-
Typ. Max.
-
-
0.69
150
Unit
V
mA
Conditions
I
F
=5A
V
R
=65V
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© 2011 ROHM Co., Ltd. All rights reserved.
1/4
2011.11 - Rev.A
RBQ10T65A
Data Sheet
10
100000
Ta=150°C
10000
REVERSE CURRENT:I
R
(mA)
FORWARD CURRENT:I
F
(A)
Ta=125°C
1
Ta=150°C
Ta=75°C
0.1
Ta=25°C
1000
Ta=125°C
100
10
Ta=75°C
1
Ta=25°C
0.1
Ta=-25°C
0.01
0
100
200
300
400
500
600
700
800
0.01
0
Ta=-25°C
5 10 15 20 25 30 35 40 45 50 55 60 65 70
REVERSE VOLTAGE：V
R
(V)
V
R
-I
R
CHARACTERISTICS
FORWARD VOLTAGE：V
F
(mV)
V
F
-I
F
CHARACTERISTICS
1000
CAPACITANCE BETWEEN TERMINALS:Ct(pF)
f=1MHz
FORWARD VOLTAGE:V
F
(mV)
700
690
680
670
660
650
640
630
620
610
AVE:629.1mV
Ta=25°C
I
F
=5A
n=30pcs
100
10
1
0
5
10
15
20
25
30
600
REVERSE VOLTAGE:V
R
(V)
V
R
-Ct CHARACTERISTICS
V
F
DISPERSION MAP
50
CAPACITANCE BETWEEN TERMINALS:Ct(pF)
Ta=25°C
V
R
=65V
n=30pcs
450
440
430
420
410
400
390
380
370
360
350
I
R
DISPERSION MAP
Ct DISPERSION MAP
AVE:396pF
Ta=25°C
f=1MHz
V
R
=0V
n=10pcs
40
REVERSE CURRENT:I
R
(mA)
30
20
AVE:12.36mA
10
0
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© 2011 ROHM Co., Ltd. All rights reserved.
2/4
2011.11 - Rev.A
RBQ10T65A
Data Sheet
300
30
Ta=25°C
I
F
=0.5A
I
R
=1A
Irr=0.25*I
R
n=10pcs
PEAK SURGE
FORWARD CURRENT:I
FSM
(A)
I
FSM
8.3ms
1cyc
200
REVERSE RECOVERY TIME:trr(ns)
250
25
20
150
15
100
AVE:130A
10
AVE:7.5ns
50
5
0
I
FSM
DISRESION MAP
0
trr DISPERSION MAP
300
300
250
PEAK SURGE
FORWARD CURRENT:I
FSM
(A)
I
FSM
8.3ms
8.3ms
PEAK SURGE
FORWARD CURRENT:I
FSM
(A)
250
I
FSM
t
200
1cyc
200
150
150
100
100
50
50
0
1
10
NUMBER OF CYCLES
I
FSM
-CYCLE CHARACTERISTICS
100
0
1
10
TIME:t(ms)
I
FSM
-t CHARACTERISTICS
100
1000
15
TRANSIENT
THERMAL IMPEDANCE:Rth (°C/W)
100
Rth(j-a)
FORWARD POWER
DISSIPATION:Pf(W)
10
10
D=1/2
1
Rth(j-c)
Sin(q=180)
5
DC
0.1
0.01
0.001
0.001
0
0.01
0.1
1
10
100
1000
0
5
10
15
20
AVERAGE RECTIFIED
FORWARD CURRENT：Io(A)
Io-Pf CHARACTERISTICS
TIME:t(s)
Rth-t CHARACTERISTICS
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© 2011 ROHM Co., Ltd. All rights reserved.
3/4
2011.11 - Rev.A
RBQ10T65A
Data Sheet
2
30
0A
25
0V
t
20
D=1/2
DC
T
V
R
D=t/T
V
R
=30V
Tj=150°C
Io
1.5
REVERSE POWER
DISSIPATION:P
R
(W)
DC
1
D=1/2
0.5
Sin(q＝180)
AVERAGE RECTIFIED
FORWARD CURRENT:Io(A)
15
10
5
Sin(q＝180)
0
0
10
20
30
40
50
REVERSE VOLTAGE:V
R
(V)
V
R
-P
R
CHARACTERISTICS
60
70
0
0
25
50
75
100
125
150
AMBIENT TEMPERATURE:Ta(°C)
DERATING CURVE(Io-Ta)
30
Io
25
AVERAGE RECTIFIED
FORWARD CURRENT:Io(A)
0A
0V
t
20
DC
15
D=1/2
10
T
30
25
D=t/T
V
R
=30V
Tj=150°C
ELECTROSTATIC
DISCHARGE TEST ESD(KV)
V
R
20
15
AVE:12.6kV
10
5
Sin(q＝180)
5
AVE:2.9kV
0
0
25
50
75
100
125
150
0
C=200pF
R=0W
C=100pF
R=1.5kW
CASE TEMPERATURE:Tc(°C)
DERATING CURVE(Io-Tc)
ESD DISPERSION MAP
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© 2011 ROHM Co., Ltd. All rights reserved.
4/4
2011.11 - Rev.A
Notice
Notes
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http://www.rohm.com/contact/
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© 2011 ROHM Co., Ltd. All rights reserved.
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