Data Sheet
Schottky Barrier Diode
RBE1KA20A
lApplications
Rectifying Small Power
lDimensions
(Unit : mm)
2.0±0.1
1.3±0.1
0.65
0.65
0.85MAX
0.77±0.05
lFeatures
1)Small power mold type (TUMD5)
2)High reliability
2.1±0.1
1.7±0.1
0½0.1
0.2MAX
0.3
－0.05
＋0.1
0.17±0.05
1pin mark
ROHM : TUMD5
JEDEC : -
JEITA : -
dot (year week factory)
lLand
size figure
(Unit : mm)
1.3
0.65 0.65
lStructure
0.6MIN.
0.4
0.45
lTaping
dimensions
(Unit : mm)
lAbsolute
maximum ratings
(Tc=25C)
Parameter
Limits
Symbol
V
RM
Reverse voltage (repetitive peak)
30
Reverse voltage (DC)
20
V
R
Average rectified forward current (*1)
1
Io
I
FSM
Forward current surge peak (60Hz・1cyc) (*2)
3
Junction temperature
125
Tj
Storage temperature
-40
to
+125
Tstg
(*1)Rating for each diode Io/2 (*2)Rating of per diode.
lElectrical
characteristics
(Tj=25C)
Parameter
Symbol
V
F
Forward voltage
Reverse current
I
R
1.9
Unit
V
V
A
A
C
C
Min.
-
-
Typ.
-
-
Max.
0.43
200
Unit
V
μA
Conditions
I
F
=0.5A
V
R
=20V
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© 2011 ROHM Co., Ltd. All rights reserved.
1/4
2011.10 - Rev.A
RBE1KA20A
Data Sheet
10
100000
10000
REVERSE CURRENT:I
R
(mA)
FORWARD CURRENT:I
F
(A)
1
Ta=125°C
1000
Ta=125°C
100
Ta=75°C
Ta=75°C
0.1
Ta=25°C
10
Ta=25°C
1
Ta=-25°C
0.01
0
100
200
300
400
500
600
700
FORWARD VOLTAGE：V
F
(mV)
V
F
-I
F
CHARACTERISTICS
0.1
0
5
10
15
Ta=-25°C
20
25
30
REVERSE VOLTAGE：V
R
(V)
V
R
-I
R
CHARACTERISTICS
100
f=1MHz
FORWARD VOLTAGE:V
F
(mV)
CAPACITANCE BETWEEN
TERMINALS:Ct(pF)
400
395
390
385
380
375
370
365
360
355
AVE:384.1mV
Ta=25°C
I
F
=500mA
n=30pcs
10
1
0
5
10
15
20
25
30
REVERSE VOLTAGE:V
R
(V)
V
R
-Ct CHARACTERISTICS
350
V
F
DISPERSION MAP
100
Ta=25°C
V
R
=20V
n=30pcs
CAPACITANCE BETWEEN
TERMINALS:Ct(pF)
65
Ta=25°C
f=1MHz
V
R
=0V
n=10pcs
AVE:62.8pF
63
90
REVERSE CURRENT:I
R
(μA)
64
80
AVE:84.9μA
70
62
60
61
50
I
R
DISPERSION MAP
60
Ct DISPERSION MAP
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© 2011 ROHM Co., Ltd. All rights reserved.
2/4
2011.10 - Rev.A
RBE1KA20A
Data Sheet
30
20
Ta=25°C
I
F
=0.5A
I
R
=1A
Irr=0.25*I
R
n=10pcs
REVERSE RECOVERY TIME:trr(ns)
PEAK SURGE
FORWARD CURRENT:I
FSM
(A)
25
I
FSM
8.3ms
1cyc
15
20
15
10
AVE:5.8ns
5
10
AVE:13.6A
5
0
I
FSM
DISPERSION MAP
0
trr DISPERSION MAP
30
I
FSM
PEAK SURGE
FORWARD CURRENT:I
FSM
(A)
8.3ms
20
8.3ms
30
25
PEAK SURGE
FORWARD CURRENT:I
FSM
(A)
25
I
FSM
t
1cyc
20
15
15
10
10
5
5
0
1
10
NUMBER OF CYCLES
I
FSM
-CYCLE CHARACTERISTICS
100
0
1
10
TIME:t(ms)
I
FSM
-t CHARACTERISTICS
100
10000
Mounted on epoxy board
TRANSIENT
THERMAL IMPEDANCE:Rth (°C/W)
1
1000
Rth(j-a)
100
Rth(j-c)
FORWARD POWER
DISSIPATION:Pf(W)
0.5
D=1/2
Sin(θ＝180)
DC
10
1
0.001
0
0.01
1
10
TIME:t(s)
Rth-t CHARACTERISTICS
0.1
100
1000
0
0.5
1
1.5
2
AVERAGE RECTIFIED
FORWARD CURRENT：Io(A)
Io-Pf CHARACTERISTICS
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© 2011 ROHM Co., Ltd. All rights reserved.
3/4
2011.10 - Rev.A
RBE1KA20A
Data Sheet
1
3
0A
0V
AVERAGE RECTIFIED
FORWARD CURRENT:Io(A)
t
2
D=1/2
DC
T
V
R
D=t/T
V
R
=10V
Tj=125°C
Io
REVERSE POWER
DISSIPATION:P
R
(W)
0.5
DC
1
Sin(θ＝180)
D=1/2
Sin(θ＝180)
0
0
10
20
30
REVERSE VOLTAGE:V
R
(V)
V
R
-P
R
CHARACTERISTICS
0
0
25
50
75
100
125
AMBIENT TEMPERATURE:Ta(°C)
DERATING CURVE (Io-Ta)
3
Io
0A
0V
AVERAGE RECTIFIED
FORWARD CURRENT:Io(A)
t
2
DC
T
V
R
D=t/T
V
R
=10V
Tj=125°C
30
AVE:25.0kV
25
ELECTROSTATIC
DISCHARGE TEST ESD(KV)
20
15
1
D=1/2
Sin(θ＝180)
10
AVE:2.6kV
5
0
0
25
50
75
100
125
CASE TEMPERATURE:Tc(°C)
DERATING CURVE (Io-Tc)
0
C=200pF
R=0Ω
C=100pF
R=1.5kΩ
ESD DISPERSION MAP
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© 2011 ROHM Co., Ltd. All rights reserved.
4/4
2011.10 - Rev.A
Notice
Notes
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