Data Sheet
Schottky Barrier Diode
RB520ZS8A30
lApplications
Rectifying small power
lDimensions
(Unit : mm)
lLand
size figure
(Unit : mm)
0.4
0.3
lFeatures
1) Ultra small mold type (HMD8)
2) Halogen Free
AD
HMD8 0.25
ROHM : HMD8
JEDEC : -
JEITA : -
lStructure
lConstruction
Silicon epitaxial planer
lTaping
dimensions
(Unit : mm)
dot
(year week factory)
lAbsolute
maximum ratings
(Ta=25C)
Parameter
Symbol
V
R
Reverse voltage (DC)
Average rectified forward current (*1)
Io
Forward current surge peak (60Hz½1cyc.) (*2)
I
FSM
Junction temperature
Tj
Storage temperature
Tstg
Power dissipation
Pd
(*1)(*2)Rating of per diode
lElectrical
characteristics
(Ta=25C)
Parameter
Symbol
V
F
Forward voltage
Reverse current
I
R
Limits
30
100
500
150
-55
to
+150
400
Unit
V
mA
mA
C
C
mW/Total
Min.
-
-
Typ.
-
-
Max.
0.46
0.3
Unit
V
μA
I
F
=10mA
V
R
=10V
Conditions
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© 2011 ROHM Co., Ltd. All rights reserved.
1/4
2011.11 - Rev.A
RB520ZS8A30
Data Sheet
100
Ta=150°C
1000000
Ta=150°C
100000
REVERSE CURRENT:I
R
(nA)
Ta=125°C
FORWARD CURRENT:I
F
(mA)
Ta=125°C
10000
Ta=75°C
1000
Ta=25°C
10
Ta=75°C
Ta=25°C
100
1
Ta=-25°C
10
Ta=-25°C
1
0.1
0
100
200
300
400
500
600
700
FORWARD VOLTAGE：V
F
(mV)
V
F
-I
F
CHARACTERISTICS
0.1
0
10
20
30
REVERSE VOLTAGE：V
R
(V)
V
R
-I
R
CHARACTERISTICS
10
f=1MH½
FORWARD VOLTAGE:V
F
(mV)
430
Ta=25°C
I
F
=10mA
n=30pcs
420
CAPACITANCE BETWEEN
TERMINALS:Ct(pF)
410
400
AVE:405.7mV
390
1
0
10
20
30
REVERSE VOLTAGE:V
R
(V)
V
R
-Ct CHARACTERISTICS
380
V
F
DISPERSION MAP
100
90
REVERSE CURRENT:I
R
(nA)
80
70
60
50
40
30
20
10
0
I
R
DISPERSION MAP
AVE:19.93nA
Ta=25°C
V
R
=10V
n=30pcs
CAPACITANCE BETWEEN
TERMINALS:Ct(pF)
50
45
40
35
30
25
20
15
AVE:6.3pF
10
5
0
Ct DISPERSION MAP
Ta=25°C
f=1MHz
V
R
=0V
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© 2011 ROHM Co., Ltd. All rights reserved.
2/4
2011.11 - Rev.A
RB520ZS8A30
Data Sheet
30
10
9
REVERSE RECOVERY TIME:trr(ns)
Tj=25°C
I
F
=0.1A
I
R
=0.1A
Irr=0.1×I
R
n=10pcs
PEAK SURGE
FORWARD CURRENT:I
FSM
(A)
25
I
FSM
8.3ms
8
7
6
5
4
AVE:5.8ns
3
2
1
20
15
10
AVE:4.30A
5
0
I
FSM
DISPERSION MAP
0
trr DISPERSION MAP
10
I
FSM
PEAK SURGE
FORWARD CURRENT:I
FSM
(A)
PEAK SURGE
FORWARD CURRENT:I
FSM
(A)
8.3ms
8.3ms
10
I
FSM
t
1cyc.
5
5
0
1
10
NUMBER OF CYCLES
I
FSM
-CYCLE CHARACTERISTICS
100
0
1
10
TIME:t(ms)
I
FSM
-t CHARACTERISTICS
100
1000
0.15
TRANSIENT
THERMAL IMPEDANCE:Rth (°C/W)
Sin(θ＝180)
DC
100
FORWARD POWER
DISSIPATION:Pf(W)
0.1
D=1/2
10
0.05
1
0.001
0
0.01
0.1
1
10
100
1000
0
0.05
0.1
0.15
0.2
TIME:t(s)
Rth-t CHARACTERISTICS
AVERAGE RECTIFIED
FORWARD CURRENT：Io(A)
Io-Pf CHARACTERISTICS
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© 2011 ROHM Co., Ltd. All rights reserved.
3/4
2011.11 - Rev.A
RB520ZS8A30
Data Sheet
0.005
30
25
ELECTROSTATIC
DISCHARGE TEST ESD(KV)
0.004
REVERSE POWER
DISSIPATION:P
R
(W)
20
0.003
DC
0.002
D=1/2
0.001
Sin(θ＝180)
15
AVE:7.4kV
10
5
AVE:0.90kV
0
0
10
20
30
REVERSE VOLTAGE:V
R
(V)
V
R
-P
R
CHARACTERISTICS
0
C=200pF
R=0Ω
C=100pF
R=1.5kΩ
ESD DISPERSION MAP
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© 2011 ROHM Co., Ltd. All rights reserved.
4/4
2011.11 - Rev.A
Notice
Notes
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http://www.rohm.com/contact/
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© 2011 ROHM Co., Ltd. All rights reserved.
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