SOT223 N-CHANNEL ENHANCEMENT
MODE VERTICAL DMOS FET
ISSUE 3 - JANUARY 1996
7
FEATURES
* Compact geometry
* Fast switching speeds
* No secondary breakdown and Excellent temperature stability
* High input impedance and low current drive
* Ease of parralleling
ZVN4206G
D
S
D
G
APPLICATIONS
* DC-DC converters
* Solenoid / relay drivers for automotive applications
* Stepper motor drivers and Print head drivers
PARTMARKING DETAIL -
ZVN4206
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
Drain-Source Voltage
Continuous Drain Current at T
amb
=25°C
Pulsed Drain Current
Gate-Source Voltage
Power Dissipation at T
amb
=25°C
Operating and Storage Temperature Range
SYMBOL
V
DS
I
D
I
DM
V
GS
P
tot
T
j
:T
stg
VALUE
60
1
8
±
20
2
-55 to +150
UNIT
V
A
A
V
W
°C
3 - 401
ZVN4206G
ELECTRICAL CHARACTERISTICS (at T
amb
= 25°C unless otherwise stated).
PARAMETER
SYMBOL MIN.
60
1.3
3
100
10
100
3
1
1.5
300
100
60
20
8
12
12
15
MAX.
UNIT CONDITIONS.
V
V
nA
µA
µA
A
Ω
Ω
mS
pF
pF
pF
ns
ns
ns
ns
V
DD
≈25V,
I
D
=1.5A, V
GEN
=10V
V
DS
=25V, V
GS
=0V, f=1MHz
I
D
=1mA, V
GS
=0V
I
D
=1mA, V
DS
= V
GS
V
GS
=± 20V, V
DS
=0V
V
DS
=60V, V
GS
=0V
V
DS
=48V, V
GS
=0V, T=125°C
(2)
V
DS
=25V, V
GS
=10V
V
GS
=10V, I
D
=1.5A
V
GS
=5V, I
D
=0.5A
V
DS
=25V,I
D
=1.5A
Drain-Source Breakdown Voltage BV
DSS
Gate-Source Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
On-State Drain Current (1)
Static Drain-Source On-State
Resistance (1)
V
GS(th)
I
GSS
I
DSS
I
D(on)
R
DS(on)
Forward Transconductance (1)(2) g
fs
Input Capacitance (2)
Common Source Output
Capacitance (2)
Reverse Transfer Capacitance (2)
Turn-On Delay Time (2)(3)
Rise Time (2)(3)
Turn-Off Delay Time (2)(3)
Fall Time (2)(3)
C
iss
C
oss
C
rss
t
d(on)
t
r
t
d(off)
t
f
(1) Measured under pulsed conditions. Width=300µs. Duty cycle
≤2%
(2) Sample test.
(3) Switching times measured with 50Ω source impedance and <5ns rise time on a pulse generator
3 - 402
ZVN4206G
TYPICAL CHARACTERISTICS
10
V
GS=
20V
16V
14V
12V
10V
9V
8V
7V
2
6V
5V
4.5V
4V
3.5V
50
10
V
GS=
20V
16V
14V
12V
10V
9V
8V
7V
6V
5V
4.5V
4V
3.5V
10
I
D
- Drain Current (Amps)
6
I
D
- Drain Current (Amps)
8
8
6
4
4
2
0
0
10
20
30
40
0
2
4
6
8
V
DS
- Drain Source
Voltage (Volts)
V
DS
- Drain Source
Voltage (Volts)
Output Characteristics
Saturation Characteristics
V
DS-
Drain Source
Voltage (Volts)
10
I
D
- Drain Current (Amps)
6
V
DS=
10V
4
8
6
4
I
D=
3A
1.5A
0.5A
0
2
4
6
8
10
2
2
0
0
0
2
4
6
8
10
V
GS-
Gate Source Voltage
(Volts)
V
GS-
Gate Source
Voltage (Volts)
Voltage Saturation Characteristics
R
DS(on)
-Drain Source On Resistance
(Ω)
Transfer Characteristics
V
GS
=3.5V
10
4.5V
6V
8V 10V
2.6
Normalised R
DS(on)
and V
GS(th)
2.4
2.2
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
-50 -25
)
on
S(
V
GS=
10V
I
D=
1.5A
14V
1.0
20V
R
D
ce
an
ist
es
eR
rc
ou
-S
in
a
Dr
V
GS=
V
DS
I
D=
1mA
Gate Threshold Voltage V
GS(TH)
0
25 50 75 100 125 150 175 200 225
0.1
0.1
1.0
10
I
D-
Drain Current
(Amps)
T
j
-Junction Temperature (°C)
On-resistance v drain current
Normalised R
DS(on)
and V
GS(th)
v Temperature
3 - 403
ZVN4206G
TYPICAL CHARACTERISTICS
1000
1000
g
fs
-Transconductance (mS)
700
600
500
400
300
200
100
0
0
1
2
3
g
fs
-Transconductance (mS)
900
800
V
DS=
10V
900
800
700
600
500
400
300
200
100
0
0
1
2
3
4
5
6
7
8
9
10
V
DS=
10V
4
5
6
7
8
9
10
I
D
- Drain Current (Amps)
V
GS
-Gate Source Voltage (Volts)
Transconductance v drain current
Transconductance v gate-source voltage
V
DS
=
20V 40V 60V
I
D=
1.5A
V
GS
-Gate Source Voltage (Volts)
200
16
14
12
10
8
6
4
2
0
C-Capacitance (pF)
160
120
80
40
0
0
10
20
30
40
50
C
iss
C
oss
C
rss
60
70
80
0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 6.0
V
DS
-Drain Source Voltage (Volts)
Q-Charge (nC)
Capacitance v drain-source voltage
Gate charge v gate-source voltage
3 - 404
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