Cache SRAM, 128KX36, 4ns, CMOS, PQFP100, 20 X 14 MM, TQFP-100
参数名称 | 属性值 |
厂商名称 | SAMSUNG(三星) |
零件包装代码 | QFP |
包装说明 | LQFP, |
针数 | 100 |
Reach Compliance Code | unknown |
ECCN代码 | 3A991.B.2.A |
最长访问时间 | 4 ns |
其他特性 | SELF-TIMED WRITE CYCLE |
JESD-30 代码 | R-PQFP-G100 |
长度 | 20 mm |
内存密度 | 4718592 bit |
内存集成电路类型 | CACHE SRAM |
内存宽度 | 36 |
功能数量 | 1 |
端子数量 | 100 |
字数 | 131072 words |
字数代码 | 128000 |
工作模式 | SYNCHRONOUS |
最高工作温度 | 70 °C |
最低工作温度 | |
组织 | 128KX36 |
封装主体材料 | PLASTIC/EPOXY |
封装代码 | LQFP |
封装形状 | RECTANGULAR |
封装形式 | FLATPACK, LOW PROFILE |
并行/串行 | PARALLEL |
认证状态 | Not Qualified |
座面最大高度 | 1.6 mm |
最大供电电压 (Vsup) | 3.6 V |
最小供电电压 (Vsup) | 3.135 V |
标称供电电压 (Vsup) | 3.3 V |
表面贴装 | YES |
技术 | CMOS |
温度等级 | COMMERCIAL |
端子形式 | GULL WING |
端子节距 | 0.65 mm |
端子位置 | QUAD |
宽度 | 14 mm |
K7A403601A-TC14 | K7A403601A-QC140 | K7A403601A-TC16 | K7A403601A-TC10 | K7A403601A-QC160 | K7A403601A-TC15 | |
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描述 | Cache SRAM, 128KX36, 4ns, CMOS, PQFP100, 20 X 14 MM, TQFP-100 | Cache SRAM, 128KX36, 4ns, CMOS, PQFP100, 20 X 14 MM, TQFP-100 | Cache SRAM, 128KX36, 3.5ns, CMOS, PQFP100, 20 X 14 MM, TQFP-100 | Cache SRAM, 128KX36, 5ns, CMOS, PQFP100, 20 X 14 MM, TQFP-100 | Cache SRAM, 128KX36, 3.5ns, CMOS, PQFP100, 20 X 14 MM, TQFP-100 | Cache SRAM, 128KX36, 3.8ns, CMOS, PQFP100, 20 X 14 MM, TQFP-100 |
零件包装代码 | QFP | QFP | QFP | QFP | QFP | QFP |
包装说明 | LQFP, | LQFP, | LQFP, | LQFP, | LQFP, | LQFP, |
针数 | 100 | 100 | 100 | 100 | 100 | 100 |
Reach Compliance Code | unknown | unknown | unknown | unknown | unknown | unknow |
ECCN代码 | 3A991.B.2.A | 3A991.B.2.A | 3A991.B.2.A | 3A991.B.2.A | 3A991.B.2.A | 3A991.B.2.A |
最长访问时间 | 4 ns | 4 ns | 3.5 ns | 5 ns | 3.5 ns | 3.8 ns |
其他特性 | SELF-TIMED WRITE CYCLE | PIPELINED ARCHITECTURE | SELF-TIMED WRITE CYCLE | SELF-TIMED WRITE CYCLE | PIPELINED ARCHITECTURE | SELF-TIMED WRITE CYCLE |
JESD-30 代码 | R-PQFP-G100 | R-PQFP-G100 | R-PQFP-G100 | R-PQFP-G100 | R-PQFP-G100 | R-PQFP-G100 |
长度 | 20 mm | 20 mm | 20 mm | 20 mm | 20 mm | 20 mm |
内存密度 | 4718592 bit | 4718592 bit | 4718592 bit | 4718592 bit | 4718592 bit | 4718592 bi |
内存集成电路类型 | CACHE SRAM | CACHE SRAM | CACHE SRAM | CACHE SRAM | CACHE SRAM | CACHE SRAM |
内存宽度 | 36 | 36 | 36 | 36 | 36 | 36 |
功能数量 | 1 | 1 | 1 | 1 | 1 | 1 |
端子数量 | 100 | 100 | 100 | 100 | 100 | 100 |
字数 | 131072 words | 131072 words | 131072 words | 131072 words | 131072 words | 131072 words |
字数代码 | 128000 | 128000 | 128000 | 128000 | 128000 | 128000 |
工作模式 | SYNCHRONOUS | SYNCHRONOUS | SYNCHRONOUS | SYNCHRONOUS | SYNCHRONOUS | SYNCHRONOUS |
最高工作温度 | 70 °C | 70 °C | 70 °C | 70 °C | 70 °C | 70 °C |
组织 | 128KX36 | 128KX36 | 128KX36 | 128KX36 | 128KX36 | 128KX36 |
封装主体材料 | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY |
封装代码 | LQFP | LQFP | LQFP | LQFP | LQFP | LQFP |
封装形状 | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR |
封装形式 | FLATPACK, LOW PROFILE | FLATPACK, LOW PROFILE | FLATPACK, LOW PROFILE | FLATPACK, LOW PROFILE | FLATPACK, LOW PROFILE | FLATPACK, LOW PROFILE |
并行/串行 | PARALLEL | PARALLEL | PARALLEL | PARALLEL | PARALLEL | PARALLEL |
认证状态 | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified |
座面最大高度 | 1.6 mm | 1.6 mm | 1.6 mm | 1.6 mm | 1.6 mm | 1.6 mm |
最大供电电压 (Vsup) | 3.6 V | 3.6 V | 3.6 V | 3.6 V | 3.6 V | 3.6 V |
最小供电电压 (Vsup) | 3.135 V | 3.135 V | 3.135 V | 3.135 V | 3.135 V | 3.135 V |
标称供电电压 (Vsup) | 3.3 V | 3.3 V | 3.3 V | 3.3 V | 3.3 V | 3.3 V |
表面贴装 | YES | YES | YES | YES | YES | YES |
技术 | CMOS | CMOS | CMOS | CMOS | CMOS | CMOS |
温度等级 | COMMERCIAL | COMMERCIAL | COMMERCIAL | COMMERCIAL | COMMERCIAL | COMMERCIAL |
端子形式 | GULL WING | GULL WING | GULL WING | GULL WING | GULL WING | GULL WING |
端子节距 | 0.65 mm | 0.65 mm | 0.65 mm | 0.65 mm | 0.65 mm | 0.65 mm |
端子位置 | QUAD | QUAD | QUAD | QUAD | QUAD | QUAD |
宽度 | 14 mm | 14 mm | 14 mm | 14 mm | 14 mm | 14 mm |
厂商名称 | SAMSUNG(三星) | - | SAMSUNG(三星) | SAMSUNG(三星) | SAMSUNG(三星) | SAMSUNG(三星) |
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