HY51V64160A,HY51V65160A
4Mx16, Fast Page mode
2nd Generation
DESCRIPTION
This family is a 64M bit dynamic RAM organized 4,194,304 x 16-bit configuration with Fast Page mode CMOS DRAMs.
Fast Page mode offers high speed of random access memory within the same row. The circuit and process design allow
this device to achieve high performance and low power dissipation. Optional features are access time(60 or 70ns) and
refresh cycle(8K ref. or 4K ref.) and power consumption (Normal or Low power with self refresh). Hyundai’s advanced
circuit design and process technology allow this device to achieve high bandwidth, low power consumption and high
reliability.
FEATURES
Ÿ
Fast page mode operation
Ÿ
Read-modify-write capability
Ÿ
Multi-bit parallel test capability
Ÿ
LVTTL(3.3V) compatible inputs and outputs
Ÿ
/CAS-before-/RAS, /RAS-only, Hidden and
Self refresh capability
Ÿ
Max. Active power dissipation
Speed
50
60
Ÿ
Refresh cycles
Part number
HY51V64160A
1)
HY51V65160A
2)
Refresh
8K
64ms
4K
128ms
Normal
L-part
8K refresh
396mW
324mW
4K refresh
504mW
432mW
Ÿ
JEDEC standard pinout
50-pin plastic TSOP-II (400mil)
Ÿ
Single power supply of 3.3
±
0.3V
Ÿ
Early write or output enable controlled write
Ÿ
Fast access time and cycle time
Speed
50
60
tRAC
50ns
60ns
tCAC
13ns
15ns
tPC
35ns
40ns
1) Normal read / write, /RAS only refresh : 8K cycles / 64ms
/CAS-before-/RAS, Hidden refresh
: 4K cycles / 64ms
2) Normal read / write, /RAS only refresh : 4K cycles / 64ms
/CAS-before-/RAS, Hidden refresh
: 4K cycles / 64ms
ORDERING INFORMATION
Part Name
HY51V64160ATC
HY51V64160ALTC
HY51V64160ASLTC
HY51V65160ATC
HY51V65160ALTC
HY51V65160ASLTC
*SL : Self refresh with low power.
Refresh
8K
8K
8K
4K
4K
4K
Power
Package
50Pin TSOP-II
L-part
*SL-part
50Pin TSOP-II
50Pin TSOP-II
50Pin TSOP-II
L-part
*SL-part
50Pin TSOP-II
50Pin TSOP-II
This document is a general product description and is subject to change without notice. Hyundai electronics does not assume any responsibility for use of
circuits described. No patent licences are implied
Hyundai Semiconductor
Rev.12/Sep.98
1
HY51V64160A,HY51V65160A
PIN CONFIGURATION
(Marking Side)
V
CC
DQ0
DQ1
DQ2
DQ3
V
CC
DQ4
DQ5
DQ6
DQ7
N.C
V
CC
WE
RAS
N.C
N.C
N.C
N.C
A0
A1
A2
A3
A4
A5
V
CC
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
23
24
25
•
50
49
48
47
46
45
44
43
42
41
40
39
38
37
36
35
34
33
32
31
30
29
28
27
26
V
SS
DQ15
DQ14
DQ13
DQ12
V
SS
DQ11
DQ10
DQ9
DQ8
N.C
V
SS
LCAS
UCAS
OE
N.C
N.C
A12(N.C)*
A11
A10
A9
A8
A7
A6
V
SS
50Pin Plastic TSOP- II (400mil)
A12(N.C)* : For 4K refresh product
PIN DESCRIPTION
Pin Name
/RAS
/CAS
/WE
/OE
A0~A12
A0~A11
DQ0~DQ15
Vcc
Vss
NC
Parameter
Row Address Strobe
Column Address Strobe
Write Enable
Output Enable
Address Input (8K Refresh Product)
Address Input (4K Refresh Product)
Data In/Out
Power (3.3V)
Ground
No Connection
4Mx16,FP DRAM
Rev.12/S3ep.98
3
HY51V64160A,HY51V65160A
ABSOLUTE MAXIMUM RATING
Symbol
T
A
T
STG
V
IN,
V
OUT
V
CC
I
OS
P
D
T
SOLDER
Parameter
Ambient Temperature
Storage Temperature
Voltage on Any Pin relative to V
SS
Voltage on V
CC
relative to V
SS
Short Circuit Output Current
Power Dissipation
Soldering Temperature
Ÿ
Time
Rating
0 to 70
-55 to 150
-0.5 to 6.0
-0.5 to 4.6
50
1
260
Ÿ
10
Unit
°C
°C
V
V
mA
W
°C
Ÿ
sec
Note
: Operation at or above Absolute Maximum Ratings could adversely affect device reliability and cause permanent
damage.
RECOMMENDED DC OPERATING CONDITIONS
(T
A
= 0°C to 70°C )
Symbol
V
CC
V
IH
V
IL
Parameter
Power Supply Voltage
Input High Voltage
Input Low Voltage
Min
3.0
2.0
-0.3
2)
Typ
3.3
-
-
Max
3.6
V
CC+
0.3
1)
0.8
UNIT
V
V
V
Note
: All voltages are referenced to V
SS
.
1) 6.0V at pulse width 10ns which is measured at V
CC
.
2) -1.0V at pulse width 10ns which is measured at V
SS
.
DC AND OPERATING CHARACTERISTICS
Symbol
I
LI
I
LO
Parameter
Input Leakage Current
(Any input)
Output Leakage Current
(Any input)
Output Low Voltage
Output High Voltage
Test condition
V
SS
≤
V
IN
≤
V
CC +
0.3
All other pins not under test
=
V
SS
V
SS
≤
V
OUT
≤
V
CC
/RAS&/CAS at V
IH
I
OL
= 2.0mA
I
OH
= -2.0mA
Min
-5
-5
-
2.4
Max
5
5
0.4
-
Unit
µA
µA
V
V
V
OL
V
OH
4Mx16,FP DRAM
Rev.12/Sep.98
4
HY51V64160A,HY51V65160A
DC CHARACTERISTICS
(T
A
= 0°C to 70°C , V
CC
= 3.3
±
0.3V , V
SS
= 0V, unless otherwise noted.)
Symbol
Parameter
Test condition
Speed
Max. Current
8K refresh
I
CC1
I
CC2
I
CC3
I
CC4
I
CC5
I
CC6
Operating Current
LVTTL Standby
Current
/RAS-only Refresh
Current
FP mode Current
CMOS Standby
Current
/CAS-before-/RAS
Refresh Current
Battery Back-up
Current (L-part)
/RAS, /CAS Cycling
t
RC =
t
RC(min.)
/RAS, /CAS
≥
V
IH
Other inputs
≥
V
SS
/RAS Cycling,/CAS
=
V
IH
t
RC =
t
RC(min.)
/CAS Cycling, /RAS
=
V
IL
t
PC =
t
PC(min.)
/RAS
=
/CAS
≥
V
CC -
0.2V
t
RC =
t
RC(min.)
50
60
50
60
L-part
50
60
50
60
110
90
1
110
90
90
80
500
300
140
120
4K refresh
140
120
1
140
120
100
90
500
300
140
120
mA
mA
mA
mA
µA
mA
Unit
I
CC7
V
IH =
V
CC -
0.2V, V
IL =
0.2V
/CAS
=
CBR cycling or 0.2V
/OE&/WE
=
V
IH =
V
CC -
0.2V
Address
=
Don’t care
DQ0~DQ15
=
Open, tRAS
≤
300ns
tRC=31.25uS
/RAS&/CAS
=
0.2V
Other pins are same as I
CC7
550
550
µA
I
CC8
Self Refresh Current
(L-part)
450
450
µA
Note
1. I
CC1
, I
CC3
, I
CC4
and I
CC6
depend on output loading and cycle rates(t
RC
and t
PC
).
2. Specified values are obtained with output unloaded.
3. I
CC
is specified as an average current. In I
CC1
, I
CC3
, I
CC6
, address can be changed only once while /RAS=V
IL
. In I
CC4
,
address can be changed maximum once while /CAS=V
IH
withen one FP mode cycle time t
PC
.
4Mx16,FP DRAM
Rev.12/Sep.98
5
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