MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
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by MRF9030/D
The RF Sub–Micron MOSFET Line
RF Power Field Effect Transistors
N–Channel Enhancement–Mode Lateral MOSFETs
Designed for broadband commercial and industrial applications with frequen-
cies up to 1.0 GHz. The high gain and broadband performance of these devices
make them ideal for large–signal, common–source amplifier applications in
26 volt base station equipment.
•
Typical Two–Tone Performance at 945 MHz, 26 Volts
Output Power — 30 Watts PEP
Power Gain — 19 dB
Efficiency — 41.5%
IMD — –32.5 dBc
•
Integrated ESD Protection
•
Designed for Maximum Gain and Insertion Phase Flatness
•
Capable of Handling 10:1 VSWR, @ 26 Vdc, 945 MHz, 30 Watts CW
Output Power
•
Excellent Thermal Stability
•
Characterized with Series Equivalent Large–Signal Impedance Parameters
•
In Tape and Reel. R1 Suffix = 500 Units per 32 mm, 13 inch Reel.
•
Available with Low Gold Plating Thickness on Leads. L Suffix Indicates
40µ″ Nominal.
MRF9030R1
MRF9030LSR1
945 MHz, 30 W, 26 V
LATERAL N–CHANNEL
BROADBAND
RF POWER MOSFETs
CASE 360B–05, STYLE 1
NI–360
MRF9030R1
CASE 360C–05, STYLE 1
NI–360S
MRF9030LSR1
MAXIMUM RATINGS
Rating
Drain–Source Voltage
Gate–Source Voltage
Total Device Dissipation @ T
C
= 25°C
Derate above 25°C
MRF9030R1
MRF9030LSR1
Storage Temperature Range
Operating Junction Temperature
T
stg
T
J
Symbol
V
DSS
V
GS
P
D
Value
68
–0.5, +15
92
0.53
117
0.67
–65 to +150
200
Unit
Vdc
Vdc
Watts
W/°C
°C
°C
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction to Case
MRF9030R1
MRF9030LSR1
Symbol
R
θJC
Max
1.9
1.5
Unit
°C/W
ESD PROTECTION CHARACTERISTICS
Test Conditions
Human Body Model
Machine Model
Class
1 (Minimum)
M1 (Minimum)
NOTE –
CAUTION
– MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and
packaging MOS devices should be observed.
REV 3
MOTOROLA RF
Motorola, Inc. 2002
DEVICE DATA
MRF9030R1 MRF9030LSR1
1
ELECTRICAL CHARACTERISTICS
(T
C
= 25°C unless otherwise noted)
Characteristic
OFF CHARACTERISTICS
Zero Gate Voltage Drain Leakage Current
(V
DS
= 68 Vdc, V
GS
= 0 Vdc)
Zero Gate Voltage Drain Leakage Current
(V
DS
= 26 Vdc, V
GS
= 0 Vdc)
Gate–Source Leakage Current
(V
GS
= 5 Vdc, V
DS
= 0 Vdc)
ON CHARACTERISTICS
Gate Threshold Voltage
(V
DS
= 10 Vdc, I
D
= 100
µAdc)
Gate Quiescent Voltage
(V
DS
= 26 Vdc, I
D
= 250 mAdc)
Drain–Source On–Voltage
(V
GS
= 10 Vdc, I
D
= 0.7 Adc)
Forward Transconductance
(V
DS
= 10 Vdc, I
D
= 2 Adc)
DYNAMIC CHARACTERISTICS
Input Capacitance
(V
DS
= 26 Vdc
±
30 mV(rms)ac @ 1 MHz, V
GS
= 0 Vdc)
Output Capacitance
(V
DS
= 26 Vdc
±
30 mV(rms)ac @ 1 MHz, V
GS
= 0 Vdc)
Reverse Transfer Capacitance
(V
DS
= 26 Vdc
±
30 mV(rms)ac @ 1 MHz, V
GS
= 0 Vdc)
C
iss
C
oss
C
rss
—
—
—
49.5
26.5
1
—
—
—
pF
pF
pF
(continued)
V
GS(th)
V
GS(Q)
V
DS(on)
g
fs
2
—
—
—
2.9
3.8
0.19
3
4
—
0.4
—
Vdc
Vdc
Vdc
S
I
DSS
I
DSS
I
GSS
—
—
—
—
—
—
10
1
1
µAdc
µAdc
µAdc
Symbol
Min
Typ
Max
Unit
MRF9030R1 MRF9030LSR1
2
MOTOROLA RF DEVICE DATA
ELECTRICAL CHARACTERISTICS — continued
(T
C
= 25°C unless otherwise noted)
Characteristic
FUNCTIONAL TESTS
(In Motorola Test Fixture, 50 ohm system)
Two–Tone Common–Source Amplifier Power Gain
(V
DD
= 26 Vdc, P
out
= 30 W PEP, I
DQ
= 250 mA,
f1 = 945.0 MHz, f2 = 945.1 MHz)
Two–Tone Drain Efficiency
(V
DD
= 26 Vdc, P
out
= 30 W PEP, I
DQ
= 250 mA,
f1 = 945.0 MHz, f2 = 945.1 MHz)
3rd Order Intermodulation Distortion
(V
DD
= 26 Vdc, P
out
= 30 W PEP, I
DQ
= 250 mA,
f1 = 945.0 MHz, f2 = 945.1 MHz)
Input Return Loss
(V
DD
= 26 Vdc, P
out
= 30 W PEP, I
DQ
= 250 mA,
f1 = 945.0 MHz, f2 = 945.1 MHz)
Two–Tone Common–Source Amplifier Power Gain
(V
DD
= 26 Vdc, P
out
= 30 W PEP, I
DQ
= 250 mA,
f1 = 930.0 MHz, f2 = 930.1 MHz and f1 = 960.0 MHz,
f2 = 960.1 MHz)
Two–Tone Drain Efficiency
(V
DD
= 26 Vdc, P
out
= 30 W PEP, I
DQ
= 250 mA,
f1 = 930.0 MHz, f2 = 930.1 MHz and f1 = 960.0 MHz,
f2 = 960.1 MHz)
3rd Order Intermodulation Distortion
(V
DD
= 26 Vdc, P
out
= 30 W PEP, I
DQ
= 250 mA,
f1 = 930.0 MHz, f2 = 930.1 MHz and f1 = 960.0 MHz,
f2 = 960.1 MHz)
Input Return Loss
(V
DD
= 26 Vdc, P
out
= 30 W PEP, I
DQ
= 250 mA,
f1 = 930.0 MHz, f2 = 930.1 MHz and f1 = 960.0 MHz,
f2 = 960.1 MHz)
Power Output, 1 dB Compression Point
(V
DD
= 26 Vdc, P
out
= 30 W CW, I
DQ
= 250 mA,
f1 = 945.0 MHz)
Common–Source Amplifier Power Gain
(V
DD
= 26 Vdc, P
out
= 30 W CW, I
DQ
= 250 mA,
f1 = 945.0 MHz)
Drain Efficiency
(V
DD
= 26 Vdc, P
out
= 30 W CW, I
DQ
= 250 mA,
f1 = 945.0 MHz)
Output Mismatch Stress
(V
DD
= 26 Vdc, P
out
= 30 W CW, I
DQ
= 250 mA,
f = 945.0 MHz, VSWR = 10:1, All Phase Angles at Frequency
of Tests)
G
ps
18
19
—
dB
Symbol
Min
Typ
Max
Unit
η
37
41.5
—
%
IMD
—
–32.5
–28
dBc
IRL
—
–15.5
–9
dB
G
ps
—
19
—
dB
η
—
41.5
—
%
IMD
—
–33
—
dBc
IRL
—
–14
—
dB
P
1dB
—
30
—
W
G
ps
—
19
—
dB
η
—
60
—
%
Ψ
No Degradation In Output Power
MOTOROLA RF DEVICE DATA
MRF9030R1 MRF9030LSR1
3
V
GG
+
C7
B1
B2
V
DD
+
+
C16
+
C17
C8
C14
C15
L1
RF
INPUT
C5
DUT
C9
L2
RF
OUTPUT
Z1
C1
Z2
Z3
Z4
Z5
Z6
Z7
Z8
Z9
Z10
Z11
Z12
C13
Z13
C2
C3
C4
C6
C10
C11
C12
B1
B2
C1, C8, C13, C14
C2, C4
C3
C5, C6
C7, C15, C16
C9, C10
C11
C12
C17
L1, L2
Z1
Z2
Short Ferrite Bead
Long Ferrite Bead
47 pF Chip Capacitors, B Case
0.8 pF to 8.0 pF Trim Capacitors
3.9 pF Chip Capacitor, B Case
7.5 pF Chip Capacitors, B Case
10
µF,
35 V Tantalum Capacitors
10 pF Chip Capacitors, B Case
9.1 pF Chip Capacitor, B Case
0.6 pF to 4.5 pF Trim Capacitor
220
µF,
50 V Electrolytic Capacitor
12.5 nH Surface Mount Inductors
0.260″ x 0.060″ Microstrip
0.240″ x 0.060″ Microstrip
Z3
Z4
Z5
Z6
Z7
Z8
Z9
Z10
Z11
Z12
Z13
PCB
0.500″ x 0.100″ Microstrip
0.215″ x 0.270″ Microstrip
0.315″ x 0.270″ Microstrip
0.160″ x 0.270″ x 0.520″, Taper
0.285″ x 0.520″ Microstrip
0.140″ x 0.270″ Microstrip
0.450″ x 0.270″ Microstrip
0.250″ x 0.060″ Microstrip
0.720″ x 0.060″ Microstrip
0.490″ x 0.060″ Microstrip
0.290″ x 0.060″ Microstrip
Taconic RF–35–0300, 30 mil,
ε
r
= 3.55
Figure 1. 945 MHz Broadband Test Circuit Schematic
C7
V
DD
C8
C9
L1
RF INPUT
C1
C2
C3
C5
C4 C6
C10
C14
L2
C15 C16
C17
V
GG
C13
CUT OUT AREA
C11
C12
RF OUTPUT
MRF9030
900 MHz
Rev-02
Figure 2. 945 MHz Broadband Test Circuit Component Layout
MRF9030R1 MRF9030LSR1
4
MOTOROLA RF DEVICE DATA
TYPICAL CHARACTERISTICS
η
, DRAIN EFFICIENCY (%)
IMD, INTERMODULATION DISTORTION (dBc)
20
19
G ps , POWER GAIN (dB)
18
17
16
15
14
13
12
930
935
940
945
950
955
IMD
IRL
G
ps
η
V
DD
= 26 Vdc
P
out
= 30 W (PEP)
I
DQ
= 250 mA
Two-Tone, 100 kHz Tone Spacing
50
45
40
35
-30
-32
-34
-36
-38
960
-10
-12
-14
-16
-18
f, FREQUENCY (MHz)
Figure 3. Class AB Broadband Circuit Performance
20
19.5
G ps , POWER GAIN (dB)
19
18.5
18
17.5
17
I
DQ
= 375 mA
300 mA
250 mA
200 mA
IMD, INTERMODULATION DISTORTION (dBc)
-20
V
DD
= 26 Vdc
f1 = 945 MHz, f2 = 945.1 MHz
-30
I
DQ
= 200 mA
-40
300 mA
-50
375 mA
250 mA
V
DD
= 26 Vdc
f1 = 945 MHz, f2 = 945.1 MHz
1
10
P
out
, OUTPUT POWER (WATTS) PEP
100
-60
1
IRL, INPUT RETURN LOSS (dB)
10
P
out
, OUTPUT POWER (WATTS) PEP
100
Figure 4. Power Gain versus Output Power
Figure 5. Intermodulation Distortion versus
Output Power
IMD, INTERMODULATION DISTORTION (dBc)
0
-10
-20
-30
-40
-50
-60
-70
3rd Order
V
DD
= 26 Vdc
I
DQ
= 250 mA
f1 = 945 MHz, f2 = 945.1 MHz
G ps , POWER GAIN (dB)
22
20
18
16
14
12
10
0.1
η
V
DD
= 26 Vdc
I
DQ
= 250 mA
f = 945 MHz
60
50
40
30
20
10
0
η
, DRAIN EFFICIENCY (%)
G
ps
5th Order
7th Order
1
10
P
out
, OUTPUT POWER (WATTS) PEP
100
1
10
100
P
out
, OUTPUT POWER (WATTS) AVG.
Figure 6. Intermodulation Distortion Products
versus Output Power
Figure 7. Power Gain and Efficiency versus
Output Power
MOTOROLA RF DEVICE DATA
MRF9030R1 MRF9030LSR1
5
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