Preliminary
Datasheet
HITJ0201MP
–20V, –3.4A, 69mmax.
Silicon P Channel MOS FET
Power Switching
Features
Low on-resistance
R
DS(on)
= 53 m typ (V
GS
= –4.5 V, I
D
= –1.8 A)
Low drive current
High speed switching
2.5 V gate drive
R07DS0473EJ0200
Rev.2.00
May 09, 2013
Outline
RENESAS Package code: PLSP0003ZB-A
(Package name: MPAK)
3
D
3
G
1
2
S
1
2
1. Source
2. Gate
3. Drain
Note:
Marking is “UV”.
Absolute Maximum Ratings
(Ta = 25°C)
Item
Drain to source voltage
Gate to source voltage
Drain current
Drain peak current
Body - drain diode reverse drain current
Channel dissipation
Channel temperature
Storage temperature
Symbol
V
DSS
V
GSS
I
D
I
D(pulse) Note1
I
DR
Pch
(pulse) Note2
Tch
Tstg
Ratings
–20
+8 / –12
–3.4
–10
–3.4
0.8
150
–55 to +150
Unit
V
V
A
A
A
W
C
C
Notes: 1. PW
10
s,
duty cycle
1%
2. When using the glass epoxy board (FR-4: 40 x 40 x 1 mm)
R07DS0473EJ0200 Rev.2.00
May 09, 2013
Page 1 of 6
HITJ0201MP
Preliminary
Electrical Characteristics
(Ta = 25°C)
Item
Drain to source breakdown voltage
Gate to source breakdown voltage
Gate to source leak current
Drain to source leak current
Gate to source cutoff voltage
Drain to source on state resistance
Forward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn - on delay time
Rise time
Turn - off delay time
Fall time
Total gate charge
Gate to source charge
Gate to drain charge
Body - drain diode forward voltage
Notes: 3. Pulse test
Symbol
V
(BR)DSS
V
(BR)GSS
V
(BR)GSS
I
GSS
I
GSS
I
DSS
V
GS(off)
R
DS(on)
R
DS(on)
|y
fs
|
Ciss
Coss
Crss
t
d(on)
t
r
t
d(off)
t
f
Qg
Qgs
Qgd
V
DF
Min
–20
+8
–12
—
—
—
–0.4
—
—
4.5
—
—
—
—
—
—
—
—
—
—
—
Typ
—
—
—
—
—
—
—
53
80
6.5
597
149
93
18
43
37
12
6.3
1.1
2.5
–0.85
Max
—
—
—
+10
–10
–1
–1.4
69
112
—
—
—
—
—
—
—
—
—
—
—
–1.1
Unit
V
V
V
A
A
A
V
m
m
S
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
V
Test conditions
I
D
= –10 mA, V
GS
= 0
I
G
=
+100 A,
V
DS
= 0
I
G
=
–100 A,
V
DS
= 0
V
GS
=
+6
V, V
DS
= 0
V
GS
=
–10
V, V
DS
= 0
V
DS
= –20 V, V
GS
= 0
V
DS
= –10 V, I
D
= –1 mA
I
D
= –1.8 A, V
GS
= –4.5 V
Note3
I
D
= –1.8 A, V
GS
= –2.5 V
Note3
I
D
= –1.8 A, V
DS
= –10 V
Note3
V
DS
= –10 V
V
GS
= 0
f = 1 MHz
I
D
= –1.8 A
V
GS
= –4.5 V
R
L
= 5.5
Rg = 4.7
V
DD
= –10 V
V
GS
= –4.5 V
I
D
= –3.4 A
I
F
= –3.4 A, V
GS
= 0
Note3
R07DS0473EJ0200 Rev.2.00
May 09, 2013
Page 2 of 6
HITJ0201MP
Preliminary
Main Characteristics
Maximum Channel Power
Dissipation Curve
1
–100
Operation in this area
is limited by R
DS(on)
100
μs
Maximum Safe Operation Area
Channel Dissipation Pch (W)
Drain Current I
D
(A)
0.8
–10
1
m
0.6
PW
10
s
–1
DC
=
m
0.4
O
10
s
0
pe
m
ra
s
tio
n
0.2
0
–0.1
Ta = 25°C
1 Shot Pulse
0
50
100
150
–0.01
–0.01
–0.1
–1
–10
–100
Ambient Temperature Ta (°C)
*When using the glass epoxy board (FR-4: 40
×
40
×
1 mm)
Drain to Source Voltage V
DS
(V)
Typical Output Characteristics
–10
–3 V
–6 V
–10 V
–2.6 V
–2.4 V
Pulse Test
Tc = 25
°
C
Typical Transfer Characteristics
(1)
–10
V
DS
= –10 V
Pulse Test
Drain Current I
D
(A)
–2.2 V
Drain Current I
D
(A)
–8
–8
–6
–2.0 V
–6
–4
–1.8 V
–4
–2
–1.6 V
V
GS
= 0 V
–2
Tc = 75°C
0
0
–1
–25°C
25°C
–2
0
0
–2
–4
–6
–8
–10
–3
–4
Drain to Source Voltage V
DS
(V)
Gate to Source Voltage V
GS
(V)
Gate to Source Cutoff Voltage vs.
–1
V
DS
= –10 V
Pulse Test
Gate to Source Cutoff Voltage
V
GS(off)
(V)
Typical Transfer Characteristics
(2)
Case Temperature
–1.5
V
DS
= –10 V
Pulse Test
I
D
= –10 mA
–1
Drain Current I
D
(A)
–0.1
–0.01 Tc = 75°C
25°C
–1 mA
–0.5
–0.1 mA
–0.001
–25°C
–0.0001
0
–0.5
–1
–1.5
–2
–2.5
–3
0
–25
0
25
50
75
100 125 150
Gate to Source Voltage V
GS
(V)
Case Temperature Tc (°C)
R07DS0473EJ0200 Rev.2.00
May 09, 2013
Page 3 of 6
HITJ0201MP
Drain to Source Saturation Voltage
V
DS(on)
(mV)
Drain to Source Saturation Voltage vs.
Gate to Source Voltage
Preliminary
Static Drain to Source on State Resistance
vs. Drain Current
Drain to Source on State Resistance
R
DS(on)
(m
Ω
)
–
400
Pulse Test
Tc = 25°C
1000
Pulse Test
Tc = 25°C
–
300
–
200
100
V
GS
=
–
2.5 V
–4.5 V
–10 V
I
D
= –3.4 A
–
100
–1.8 A
–1 A
–0.5 A
0
0
–
2
10
–0.1
–1
–10
–100
–
4
–
6
–
8
–10
Gate to Source Voltage
V
GS
(V)
Drain Current
I
D
(A)
Static Drain to Source on State Resistance
vs. Case Temperature
Static Drain to Source on State Resistance
vs. Case Temperature
Drain to Source on State Resistance
R
DS(on)
(m
Ω
)
130
I
D
= –3.4 A
110
–1.8 A
Drain to Source on State Resistance
R
DS(on)
(m
Ω
)
130
Pulse Test
V
GS
= –4.5 V
110
90
–1 A
70
–0.5 A
90
–1.8 A
70
–1 A
50
30
–25
–0.5 A
I
D
= –3.4 A
50
30
–25
Pulse Test
V
GS
= –
2
.5 V
0
25
50
75
100 125 150
0
25
50
75
100 125 150
Case Temperature
Tc (
°
C)
Case Temperature
Tc (
°
C)
Zero Gate Voltage Drain current vs.
Case Temperature
–10000
Pulse Test
V
GS
= 0 V
–1000 V
DS
= –20 V
–100
Forward Transfer Admittance
|yfs| (S)
100
Pulse Test
V
DS
=
–
10 V
10
–25°C
1
25°C
0.1
Tc = 75°C
Zero Gate Voltage Drain current
I
DSS
(nA)
Forward Transfer Admittance vs.
Drain Current
–10
–1
–0.1
–25
0.01
–0.01
–0.1
–1
–10
0
25
50
75
100 125 150
Drain Current
I
D
(A)
Case Temperature
Tc (
°
C)
R07DS0473EJ0200 Rev.2.00
May 09, 2013
Page 4 of 6
HITJ0201MP
Dynamic Input Characteristics
Drain to Source Voltage V
DS
(V)
Gate to Source Voltage V
GS
(V)
0
V
DS
V
DD
= –20 V
–5 V
–10 V
–20
V
DD
= –20 V
V
GS
I
D
= –3.4 A
Tc = 25°C
–40
0
2
4
6
8
10
12
–16
16
–12
–10 V
–5 V
–8
0
1000
Preliminary
Switching Characteristics
V
DD
=
–
10 V
V
GS
=
–
4.5 V
Rg = 4.7
Ω
PW = 5
μs
Tc = 25°C
tr
–4
Switching Time
t (ns)
100
td(off)
td(on)
10
tf
1
–
0.1
–
1
–
10
Gate Charge Qg (nc)
Drain Current
I
D
(A)
Typical Capacitance vs.
Drain to Source Voltage
1000
Ciss
1100
1050
1000
950
900
V
GS
= 0 V
f = 1 MHz
Input Capacitance vs.
Gate to Source Voltage
Ciss, Coss, Crss (pF)
Coss
100
Crss
Ciss (pF)
850
800
V
DS
= 0 V
f = 1 MHz
0
2
4
6
8
10
10
–0
–5
–10
–15
–20
–
10
–
8
–
6
–
4
–
2
Drain to Source Voltage
V
DS
(V)
Reverse Drain Current vs.
Source to Drain Voltage
–10
Gate to Source Voltage V
GS
(V)
Body-Drain Diode Forward Voltage vs.
Case Temperature
–0.6
V
GS
= 0
–0.5
I
D
= –10 mA
–0.4
Reverse Drain Current I
DR
(A)
–
10V
Pulse Test
Tc = 25°C
–8
–
5V
–6
–4
Body-Drain Diode Forward Voltage V
SDF
(V)
–2
0
0
–0.4
–0.8
–0.3
–1 mA
–0.2
25
50
75
100
125
150
5, 10 V
V
GS
= 0 V
–1.2
–1.6
–2.0
Source to Drain Voltage V
SD
(V)
Case Temperature Tc (°C)
R07DS0473EJ0200 Rev.2.00
May 09, 2013
Page 5 of 6
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