a. Drain current limited by maximum junction temperature.
b. Repetitive rating; pulse width limited by maximum junction temperature.
c. V
DD
= 50 V, starting T
J
= 25 °C, L = 2.5 mH, R
g
= 25
,
I
AS
= 17 A.
d. I
SD
18 A, dI/dt
380 A/μs, V
DD
V
DS
, T
J
150 °C.
e. 1.6 mm from case.
* Pb containing terminations are not RoHS compliant, exemptions may apply
Document Number: 91374
S11-0520-Rev. D, 21-Mar-11
www.vishay.com
1
This datasheet is subject to change without notice.
THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
SiHP18N50C
Vishay Siliconix
THERMAL RESISTANCE RATINGS
PARAMETER
Maximum Junction-to-Ambient
Maximum Junction-to-Case (Drain)
TO-220
TO-220
SYMBOL
R
thJA
R
thJC
TYP.
-
-
MAX.
62
0.56
UNIT
°C/W
SPECIFICATIONS
(T
J
= 25 °C, unless otherwise noted)
PARAMETER
Static
Drain-Source Breakdown Voltage
V
DS
Temperature Coefficient
Gate-Source Threshold Voltage (N)
Gate-Source Leakage
Zero Gate Voltage Drain Current
Drain-Source On-State Resistance
Forward
Transconductance
a
Dynamic
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Internal Gate Resistance
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current
Pulsed Diode Forward Current
Body Diode Voltage
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
Reverse Recovery Current
I
S
I
SM
V
SD
t
rr
Q
rr
I
RRM
MOSFET symbol
showing the
integral reverse
p - n junction diode
D
SYMBOL
V
DS
V
DS
/T
J
V
GS(th)
I
GSS
I
DSS
R
DS(on)
g
fs
C
iss
C
oss
C
rss
R
g
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
TEST CONDITIONS
V
GS
= 0 V, I
D
= 250 μA
Reference to 25 °C, I
D
= 1 mA
V
DS
= V
GS
, I
D
= 250 μA
V
GS
= ± 30 V
V
DS
= 500 V, V
GS
= 0 V
V
DS
= 400 V, V
GS
= 0 V, T
J
= 125 °C
V
GS
= 10 V
I
D
= 10 A
V
DS
= 50 V, I
D
= 10 A
V
GS
= 0 V,
V
DS
= 25 V,
f = 1.0 MHz
f = 1.0 MHz, open drain
V
GS
= 10 V
I
D
= 18 A, V
DS
= 400 V
MIN.
500
-
3.0
-
-
-
-
-
-
-
-
-
-
-
-
-
TYP.
-
0.6
-
-
-
-
0.225
6.4
2451
300
26
1.1
65
21
29
80
27
32
44
MAX.
-
-
5.0
± 100
25
250
0.270
-
2942
360
32
-
76
-
-
-
-
-
-
UNIT
V
V/°C
V
nA
μA
S
pF
nC
V
DD
= 250 V, I
D
= 18 A
R
g
= 7.5
,
V
GS
= 10 V
-
-
-
ns
-
-
-
-
-
-
-
-
-
503
6.7
30
18
A
72
1.5
-
-
-
V
ns
μC
A
G
S
T
J
= 25 °C, I
S
= 18 A, V
GS
= 0 V
T
J
= 25 °C, I
F
= I
S
,
dI/dt = 100 A/μs, V
R
= 35 V
Note
a. Repetitive rating; pulse width limited by maximum junction temperature.
The information shown here is a preliminary product proposal, not a commercial product datasheet. Vishay Siliconix is not committed to produce this or any similar
product. This information should not be used for design purposes, nor construed as an offer to furnish or sell such products.
www.vishay.com
2
Document Number: 91374
S11-0520-Rev. D, 21-Mar-11
This datasheet is subject to change without notice.
THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
SiHP18N50C
Vishay Siliconix
TYPICAL CHARACTERISTICS
(25 °C, unless otherwise noted)
70
I
D
, Drain Current (A)
I
D
, Drain Current (A)
V
GS
Top
15 V
60
14 V
13 V
12 V
11 V
50
10 V
9.0 V
8.0 V
40
7.0 V
6.0 V
30 Bottom 5.0 V
20
10
0
0
6
12
18
100
T
J
=
25 °C
T
J
= 150 °C
10
T
J
= 25 °C
1
0.1
7.0 V
0.01
24
30
5
6
7
8
9
10
V
DS
, Drain-to-Source Voltage (V)
V
GS,
Gate-to-Source Voltage (V)
Fig. 1 - Typical Output Characteristics, T
C
= 150 °C
Fig. 3 - Typical Transfer Characteristics
I
D
, Drain Current (A)
V
GS
15 V
14 V
13 V
12 V
30
11 V
10 V
9.0 V
8.0 V
7.0 V
20
6.0 V
Bottom 5.0 V
Top
R
DS(on)
, Drain-to-Source On Resistance
(Normalized)
40
T
J
=
150 °C
3
2.5
2
1.5
1
0.5
0
- 60 - 40 - 20
I
D
= 17 A
V
GS
= 10 V
7.0 V
10
0
0
6
12
18
24
30
0
20 40 60 80 100 120 140 160
V
DS
, Drain-to-Source Voltage (V)
T
J,
Junction Temperature (°C)
Fig. 2 - Typical Output Characteristics, T
C
= 150 °C
Fig. 4 - Normalized On-Resistance vs. Temperature
Document Number: 91374
S11-0520-Rev. D, 21-Mar-11
www.vishay.com
3
This datasheet is subject to change without notice.
THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
SiHP18N50C
Vishay Siliconix
10
5
100
Capacitance (pF)
10
4
I
SD
, Reverse Drain Current (A)
V
GS
= 0 V, f = 1 MHz
C
iss
= C
gs
+ C
gd
, C
ds
Shorted
C
rss
= C
gd
C
oss
= C
ds
+ C
gd
C
iss
10
T
J
= 150 °C
T
J
= 25 °C
10
3
1
10
2
C
oss
10
1
10
100
C
rss
1000
0.1
0.2
0.5
0.8
V
GS
= 0 V
1.1
1.4
V
DS,
Drain-to-Source Voltage (V)
Fig. 5 - Typical Capacitance vs. Drain-to-Source Voltage
V
SD
, Source-to-Drain Voltage (V)
Fig. 7 - Typical Source-Drain Diode Forward Voltage
20
V
GS
, Gate-to-Source Voltage (V)
I
D
= 17 A
V
DS
= 400 V
V
DS
= 250 V
V
DS
= 100 V
10
3
Operation in this area limited
by
R
DS(on)
16
12
I
D
, Drain Current (A)
10
2
10
100 µs
1 ms
8
1
4
T
C
= 25
°C
T
J
= 150
°C
Single Pulse
10
10
2
10 ms
0
0
30
60
90
120
0.1
10
3
10
4
Q
G
, Total Gate Charge (nC)
Fig. 6 - Typical Gate Charge vs. Gate-to-Source Voltage
V
DS
, Drain-to-Source Voltage (V)
Fig. 8 - Maximum Safe Operating Area
20
I
D
, Drain Current (A)
15
10
5
0
25
50
75
100
125
150
T
C
, Case Temperature (°C)
Fig. 9 - Maximum Drain Current vs. Case Temperature
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Document Number: 91374
S11-0520-Rev. D, 21-Mar-11
This datasheet is subject to change without notice.
THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
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