VP0610LTA: 产品描述Small Signal Field-Effect Transistor, 0.18A I(D), 60V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-92; 产品类别分立半导体晶体管; 文件大小55KB，共2页; 制造商Calogic; 官网地址http://www.calogic.net/

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VP0610LTA概述

Small Signal Field-Effect Transistor, 0.18A I(D), 60V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-92

VP0610LTA规格参数

参数名称	属性值
厂商名称	Calogic
包装说明	CYLINDRICAL, O-PBCY-T3
Reach Compliance Code	unknown
ECCN代码	EAR99
配置	SINGLE
最小漏源击穿电压	60 V
最大漏极电流 (ID)	0.18 A
最大漏源导通电阻	10 Ω
FET 技术	METAL-OXIDE SEMICONDUCTOR
最大反馈电容 (Crss)	5 pF
JEDEC-95代码	TO-92
JESD-30 代码	O-PBCY-T3
元件数量	1
端子数量	3
工作模式	ENHANCEMENT MODE
最高工作温度	150 °C
封装主体材料	PLASTIC/EPOXY
封装形状	ROUND
封装形式	CYLINDRICAL
极性/信道类型	P-CHANNEL
认证状态	Not Qualified
表面贴装	NO
端子形式	THROUGH-HOLE
端子位置	BOTTOM
晶体管应用	SWITCHING
晶体管元件材料	SILICON

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VP0610LTA相似产品对比

	VP0610LTA	VP0610TT1	VP0610LTR1	VP0610LTR4	VP0610LTR3	VP0610LTR2	VP0610TT2
描述	Small Signal Field-Effect Transistor, 0.18A I(D), 60V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-92	Small Signal Field-Effect Transistor, 0.12A I(D), 60V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET	Small Signal Field-Effect Transistor, 0.18A I(D), 60V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-92	Small Signal Field-Effect Transistor, 0.18A I(D), 60V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-92	Small Signal Field-Effect Transistor, 0.18A I(D), 60V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-92	Small Signal Field-Effect Transistor, 0.18A I(D), 60V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-92	Small Signal Field-Effect Transistor, 0.12A I(D), 60V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET
厂商名称	Calogic	Calogic	Calogic	Calogic	Calogic	Calogic	Calogic
Reach Compliance Code	unknown	unknown	unknown	unknown	unknown	unknown	unknown
ECCN代码	EAR99	EAR99	EAR99	EAR99	EAR99	EAR99	EAR99
配置	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE
最小漏源击穿电压	60 V	60 V	60 V	60 V	60 V	60 V	60 V
最大漏极电流 (ID)	0.18 A	0.12 A	0.18 A	0.18 A	0.18 A	0.18 A	0.12 A
最大漏源导通电阻	10 Ω	10 Ω	10 Ω	10 Ω	10 Ω	10 Ω	10 Ω
FET 技术	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR
最大反馈电容 (Crss)	5 pF	5 pF	5 pF	5 pF	5 pF	5 pF	5 pF
JESD-30 代码	O-PBCY-T3	R-PDSO-G3	O-PBCY-T3	O-PBCY-T3	O-PBCY-T3	O-PBCY-T3	R-PDSO-G3
元件数量	1	1	1	1	1	1	1
端子数量	3	3	3	3	3	3	3
工作模式	ENHANCEMENT MODE	ENHANCEMENT MODE	ENHANCEMENT MODE	ENHANCEMENT MODE	ENHANCEMENT MODE	ENHANCEMENT MODE	ENHANCEMENT MODE
最高工作温度	150 °C	150 °C	150 °C	150 °C	150 °C	150 °C	150 °C
封装主体材料	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY
封装形状	ROUND	RECTANGULAR	ROUND	ROUND	ROUND	ROUND	RECTANGULAR
封装形式	CYLINDRICAL	SMALL OUTLINE	CYLINDRICAL	CYLINDRICAL	CYLINDRICAL	CYLINDRICAL	SMALL OUTLINE
极性/信道类型	P-CHANNEL	P-CHANNEL	P-CHANNEL	P-CHANNEL	P-CHANNEL	P-CHANNEL	P-CHANNEL
认证状态	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified
表面贴装	NO	YES	NO	NO	NO	NO	YES
端子形式	THROUGH-HOLE	GULL WING	THROUGH-HOLE	THROUGH-HOLE	THROUGH-HOLE	THROUGH-HOLE	GULL WING
端子位置	BOTTOM	DUAL	BOTTOM	BOTTOM	BOTTOM	BOTTOM	DUAL
晶体管应用	SWITCHING	SWITCHING	SWITCHING	SWITCHING	SWITCHING	SWITCHING	SWITCHING
晶体管元件材料	SILICON	SILICON	SILICON	SILICON	SILICON	SILICON	SILICON
包装说明	CYLINDRICAL, O-PBCY-T3	SMALL OUTLINE, R-PDSO-G3	CYLINDRICAL, O-PBCY-T3	-	CYLINDRICAL, O-PBCY-T3	CYLINDRICAL, O-PBCY-T3	-
JEDEC-95代码	TO-92	-	TO-92	TO-92	TO-92	TO-92	-

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