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Datasheet> 器件分类 > 分立半导体> 晶体管> VP0610L
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VP0610L

产品描述Small Signal Field-Effect Transistor, 0.18A I(D), 60V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-226AA,
产品类别分立半导体    晶体管   
文件大小112KB，共4页
制造商TEMIC
官网地址http://www.temic.de/
下载文档 详细参数 选型对比 全文预览

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VP0610L概述

Small Signal Field-Effect Transistor, 0.18A I(D), 60V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-226AA,

VP0610L规格参数

参数名称属性值
厂商名称TEMIC
包装说明CYLINDRICAL, O-PBCY-W3
Reach Compliance Codeunknown
其他特性LOW THRESHOLD
配置SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压60 V
最大漏极电流 (ID)0.18 A
最大漏源导通电阻10 Ω
FET 技术METAL-OXIDE SEMICONDUCTOR
最大反馈电容 (Crss)5 pF
JEDEC-95代码TO-226AA
JESD-30 代码O-PBCY-W3
元件数量1
端子数量3
工作模式ENHANCEMENT MODE
封装主体材料PLASTIC/EPOXY
封装形状ROUND
封装形式CYLINDRICAL
极性/信道类型P-CHANNEL
认证状态Not Qualified
表面贴装NO
端子形式WIRE
端子位置BOTTOM
晶体管应用SWITCHING
晶体管元件材料SILICON

VP0610L文档预览

TP0610L/T, VP0610L/T, BS250
P-Channel Enhancement-Mode MOSFET Transistors
TP0610L
TP0610T
Product Summary
Part Number
TP0610L
TP0610T
VP0610L
VP0610T
BS250
VP0610L
VP0610T
BS250
V
(BR)DSS
Min (V)
–60
–60
–60
–60
–45
r
DS(on)
Max (W)
10 @ V
GS
= –10 V
10 @ V
GS
= –10 V
10 @ V
GS
= –10 V
10 @ V
GS
= –10 V
14 @ V
GS
= –10 V
V
GS(th)
(V)
–1 to –2.4
–1 to –2.4
–1 to –3.5
–1 to
-3.5
–1 to –3.5
I
D
(A)
–0.18
–0.12
–0.18
–0.12
–0.18
Features
D
D
D
D
D
High-Side Switching
Low On-Resistance: 8
W
Low Threshold: –1.9 V
Fast Switching Speed: 16 ns
Low Input Capacitance: 15 pF
TO-226AA
(TO-92)
S
G
D
1
Benefits
D
D
D
D
D
Ease in Driving Switches
Low Offset (Error) Voltage
Low-Voltage Operation
High-Speed Switching
Easily Driven Without Buffer
TO-92-18RM
(TO-18 Lead Form)
D
G
S
1
Applications
D
Drivers: Relays, Solenoids, Lamps, Hammers,
Displays, Memories, Transistors, etc.
D
Battery Operated Systems
D
Power Supply, Converter Circuits
D
Motor Control
TO-236
(SOT-23)
G
S
1
3
D
2
2
2
3
Top View
TP0610L
VP0610L
3
Top View
BS250
Top View
TP0610T (T0)*
VP0610T (V0)*
*Marking Code for TO-236
Absolute Maximum Ratings (T
A
= 25_C Unless Otherwise Noted)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
(T
J
= 150_C)
Pulsed Drain Current
a
Power Dissipation
Maximum Junction-to-Ambient
Operating Junction & Storage Temperature Range
Notes
a. Pulse width limited by maximum junction temperature.
Updates to this data sheet may be obtained via facsimile by calling Siliconix FaxBack, 1-408-970-5600. Please request FaxBack document #70209.
Applications information may also be obtained via FaxBack, request document #70611.
T
A
=
25_C
T
A
=
100_C
T
A
=
25_C
T
A
=
100_C
Symbol
V
DS
V
GS
I
D
I
DM
P
D
R
thJA
T
J
, T
stg
TP0610L
–60
"30
–0.18
–0.11
–0.8
0.8
0.32
156
TP0610T
–60
"30
–0.12
–0.07
–0.4
0.36
0.14
350
VP0610L
–60
"30
–0.18
–0.11
–0.8
0.8
0.32
156
–55 to 150
VP0610T
–60
"30
–0.12
–0.07
–0.4
0.36
0.14
350
BS250
–45
"25
–0.18
Unit
V
A
0.83
150
W
_C/W
_C
Siliconix
S-52426—Rev. E, 14-Apr-97
1
TP0610L/T, VP0610L/T, BS250
Specifications
a
Limits
TP0610L/T
VP0610L/T
BS250
Parameter
Static
Drain-Source
Breakdown V lt
B kd
Voltage
Gate-Threshold Voltage
Symbol
Test Conditions
Typ
b
Min Max Min
Max
Min
Max
Unit
V
(BR)DSS
V
GS(th)
V
GS
= 0 V, I
D
= –10
mA
V
GS
= 0 V, I
D
= –100
mA
V
DS
= V
GS
, I
D
= –1 mA
V
DS
= 0 V, V
GS
=
"20
V
T
J
=
125_C
V
DS
= 0 V, V
GS
=
"15
V
V
DS
= –48 V, V
GS
= 0 V
–70
–60
–60
–45
V
–3.5
–1.9
–1
–2.4
"10
"50
–1
–3.5
"10
–1
Gate-Body Leakage
I
GSS
nA
"20
–1
–200
–1
–200
–0.5
mA
Zero Gate Voltage
Drain Current
I
DSS
T
J
=
125_C
V
DS
= –25 V, V
GS
= 0 V
V
DS
= –10 V, V
GS
= –4.5 V
–180
–750
–50
On-State Drain Current
c
I
D(on)
V
DS
= –10 V
V
GS
= –10 V
10
V
GS
= –4.5 V, I
D
= –25 mA
L
T
–600
–220
mA
11
L
8
15
6.5
125
90
–1.1
80
60
25
10
20
10
80
70
mS
V
10
20
10
14
W
Drain-Source
On-Resistance
c
r
DS(on)
V
GS
= –10 V
I
D
= –0.5 A
05
V
GS
= –10 V
I
D
= –0.2 A
T
J
=
125_C
T
L
T
V
DS
= –10 V, I
D
= –0.5 A
Forward Transconductance
c
Diode Forward Voltage
g
fs
V
SD
V
DS
= –10 V
I
D
= –0.1 A
I
S
= –0.5 A, V
GS
= 0 V
Dynamic
Input Capacitance
Output Capacitance
Reverse Transfer
Capacitance
C
iss
C
oss
C
rss
V
DS
= –25 V, V
GS
= 0 V
f = 1 MHz
15
10
3
60
25
5
60
25
5
pF
Switching
d
t
ON
Turn-On Time
t
d(on)
t
r
t
OFF
Turn-Off Time
t
d(off)
t
f
Notes
a. T
A
= 25_C unless otherwise noted.
b. For DESIGN AID ONLY, not subject to production testing.
c. Pulse test: PW
v300
ms
duty cycle
v2%.
d. Switching time is essentially independent of operating temperature.
V
DD
= –25 V, R
L
= 133
W
I
D
^
–0.18 A, V
GEN
= –10 V
R
G
= 25
W
8
6
10
8
7
8
15
20
15
20
VPDS06
10
15
10
15
10
ns
10
2
Siliconix
S-52426—Rev. E, 14-Apr-97
TP0610L/T, VP0610L/T, BS250
Typical Characteristics (25_C Unless Otherwise Noted)
Ohmic Region Characteristics
–500
V
GS
= –10 V
I
D
– Drain Current (mA)
–400
–8 V
–7 V
I
D
– Drain Current (mA)
–8
–10
Output Characteristics for Low Gate Drive
V
GS
= –3.0, –2.8 V
–2.6 V
–300
–6 V
–6
–2.4 V
–200
–5 V
–4
–2.2 V
–2
–2.0 V
–1.8 V
0
–100
–4 V
–3 V
0
0
–1
–2
–3
–4
–5
V
DS
– Drain-to-Source Voltage (V)
–100
0
–0.4
–0.8
–1.2
–1.6
–2.0
V
DS
– Drain-to-Source Voltage (V)
20.0
17.5
Transfer Characteristics
V
DS
= –15 V
T
C
= –55_C
125_C
r
DS(on)
– On-Resistance (
W
)
On-Resistance vs. Gate-to-Source Voltage
I
D
= –25 mA
–0.2 A
–80
I
D
– Drain Current (mA)
25_C
15.0
–0.5 A
12.5
10.0
7.5
5.0
T
J
= 25_C
–60
–40
–20
0
0
–1
–2
–3
–4
–5
V
GS
– Gate-Source Voltage (V)
2.5
0
–4
–8
–12
–16
–20
V
GS
– Gate-Source Voltage (V)
25
r
DS(on)
– Drain-Source On-Resistance (
W
)
On-Resistance vs. Drain Current
r
DS(on)
– Drain-Source On-Resistance
(Normalized)
2.25
2.00
1.75
1.50
1.25
1.00
0.75
0.50
Normalized On-Resistance
vs. Junction Temperature
V
GS
= –10 V
I
D
= –0.5 A
20
15
V
GS
= –10 V
10
5
0
0
–0.15
–0.30
–0.45
–0.60
–0.75
I
D
– Drain Current (A)
–50
–10
30
70
110
150
T
J
– Junction Temperature (_C)
Siliconix
S-52426—Rev. E, 14-Apr-97
3
TP0610L/T, VP0610L/T, BS250
Typical Characteristics (25_C Unless Otherwise Noted) (Cont’d)
–1
Threshold Region
50
Capacitance
V
GS
= 0 V
f = 1 MHz
I
D
– Drain Current (mA)
–0.1
100_C
50_C
C – Capacitance (pF)
T
J
= 150_C
40
30
20
C
iss
10
C
oss
–0.01
0_C
–55_C
–0.001
0
–0.3
–0.6
–0.9
–1.2
–1.5
–1.8
–2.1
V
GS
– Gate-to-Source Voltage (V)
0
0
C
rss
–10
–20
–30
–40
–50
V
DS
– Drain-to-Source Voltage (V)
Gate Charge
–15.0
V
GS
– Gate-to-Source Voltage (V)
–12.5
–10.0
V
DS
= –30 V
–7.5
–5.0
–2.5
0
0
100
200
300
400
500
600
Q
g
– Total Gate Charge (pC)
1
–10
–48 V
I
D
= –0.5 A
t – Switching Time (ns)
100
Load Condition Effects on Switching
V
DD
= –25 V
R
G
= 25
W
V
GS
= 0 to –10 V
t
f
t
d(off)
10
t
r
t
d(on)
–100
I
D
– Drain Current (A)
–1 k
1
Normalized Effective Transient Thermal Impedance, Junction-to-Ambient (TO-226AA)
Duty Cycle = 0.5
Normalized Effective Transient
Thermal Impedance
0.2
0.1
0.1 0.05
0.02
0.01
Single Pulse
Notes:
P
DM
t
1
t
2
1. Duty Cycle, D =
t
1
t
2
2. Per Unit Base = R
thJA
= 156
_
C/W
3. T
JM
– T
A
= P
DM
Z
thJA(t)
0.01
0.1
1
10
100
1K
10 K
t
1
– Square Wave Pulse Duration (sec)
4
Siliconix
S-52426—Rev. E, 14-Apr-97
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VP0610L相似产品对比

VP0610L VP0610T TP0610L BS250
描述 Small Signal Field-Effect Transistor, 0.18A I(D), 60V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-226AA, Small Signal Field-Effect Transistor, 0.12A I(D), 60V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236, Small Signal Field-Effect Transistor, 0.18A I(D), 60V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-226AA, TO-92, 3 PIN Small Signal Field-Effect Transistor, 0.18A I(D), 45V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-92-18RM, 3 PIN
厂商名称 TEMIC TEMIC TEMIC TEMIC
Reach Compliance Code unknown unknown unknown unknown
配置 SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压 60 V 60 V 60 V 45 V
最大漏极电流 (ID) 0.18 A 0.12 A 0.18 A 0.18 A
最大漏源导通电阻 10 Ω 10 Ω 10 Ω 14 Ω
FET 技术 METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR
JESD-30 代码 O-PBCY-W3 R-PDSO-G3 O-PBCY-W3 O-PBCY-W3
元件数量 1 1 1 1
端子数量 3 3 3 3
工作模式 ENHANCEMENT MODE ENHANCEMENT MODE ENHANCEMENT MODE ENHANCEMENT MODE
封装主体材料 PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY
封装形状 ROUND RECTANGULAR ROUND ROUND
封装形式 CYLINDRICAL SMALL OUTLINE CYLINDRICAL CYLINDRICAL
极性/信道类型 P-CHANNEL P-CHANNEL P-CHANNEL P-CHANNEL
认证状态 Not Qualified Not Qualified Not Qualified Not Qualified
表面贴装 NO YES NO NO
端子形式 WIRE GULL WING WIRE WIRE
端子位置 BOTTOM DUAL BOTTOM BOTTOM
晶体管应用 SWITCHING SWITCHING SWITCHING SWITCHING
晶体管元件材料 SILICON SILICON SILICON SILICON
包装说明 CYLINDRICAL, O-PBCY-W3 - CYLINDRICAL, O-PBCY-W3 CYLINDRICAL, O-PBCY-W3
最大反馈电容 (Crss) 5 pF 5 pF 5 pF -
JEDEC-95代码 TO-226AA TO-236 TO-226AA -

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