Silicon RF Power Semiconductors
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
RD00HVS1
4.4+/-0.1
1.6+/-0.1
LOT No.
φ
1
0.
RoHS Compliance, Silicon MOSFET Power Transistor 175MHz,0.5W
DESCRIPTION
RD00HVS1 is a MOS FET type transistor specifically
designed for VHF/UHF RF amplifiers applications.
TYPE NAME
0.8 MIN 2.5+/-0.1
OUTLINE DRAWING
1.5+/-0.1
High power gain
Pout>0.5W, Gp>20dB @Vdd=12.5V,f=175MHz
1
2
1.5+/-0.1
3
1.5+/-0.1
0.4 +0.03
-0.05
Terminal No.
1 : GATE
2 : SOURSE
3 : DRAIN
UNIT : mm
APPLICATION
For output stage of high power amplifiers in VHF/UHF
Band mobile radio sets.
0.4+/-0.07 0.5+/-0.07 0.4+/-0.07
0.1 MAX
RoHS COMPLIANT
RD00HVS1-101,T113 is a RoHS compliant products.
This product includes the lead in high melting temperature type solders.
How ever, it applicable to the following exceptions of RoHS Directions.
1.Lead in high melting temperature type solders (i.e.tin-lead solder alloys containing more than85% lead.)
ABSOLUTE MAXIMUM RATINGS
(Tc=25 deg.C UNLESS OTHERWISE NOTED)
SYMBOL
VDSS
VGSS
Pch
Pin
ID
Tch
Tstg
Rth j-c
PARAMETER
Drain to source voltage
Gate to source voltage
Channel dissipation
Input Power
Drain Current
Channel Temperature
Storage temperature
Thermal resistance
CONDITIONS
Vgs=0V
Vds=0V
Tc=25
°C
Zg=Zl=50
Ω
-
-
-
Junction to case
RATINGS
30
+/-10
3.1
20
200
150
-40 to +125
40
UNIT
V
V
W
mW
mA
°C
°C
°C/W
Note: Above parameters are guaranteed independently.
ELECTRICAL CHARACTERISTICS
(Tc=25deg.C, UNLESS OTHERWISE NOTED)
SYMBOL
I
DSS
I
GSS
Vth
Pout
η
D
PARAMETER
Zero gate voltage drain current
Gate to source leak current
Gate threshold Voltage
Output power
Drain efficiency
CONDITIONS
V
DS
=17V, V
GS
=0V
V
GS
=10V, V
DS
=0V
V
DS
=12V, I
DS
=1mA
V
DD
=12.5V, Pin=5mW,
f=175MHz,Idq=50mA
MIN
-
-
1
0.5
50
LIMITS
TYP
MAX.
-
25
-
1
2
3
0.8
-
60
-
UNIT
uA
uA
V
W
%
Note: Above parameters, ratings, limits and conditions are subject to change.
RD00HVS1
17 Aug 2010
1/7
3.9+/-0.3
FEATURES
Silicon RF Power Semiconductors
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
RD00HVS1
Vgs-Ids CHARACTERISTICS
1.0
Ta=+25°C
Vds=10V
RoHS Compliance, Silicon MOSFET Power Transistor 175MHz,0.5W
TYPICAL CHARACTERISTICS
CHANNEL DISSIPATION VS.
AMBIENT TEMPERATURE
*1:The material of the PCB
Glass epoxy (t=0.6 mm)
4
CHANNEL DISSIPATION Pch(W)
...
3
On PCB(*1) with Heat-sink
0.8
0.6
0.4
0.2
2
1
On PCB(*1)
0
0
40
80
120
160
AMBIENT TEMPERATURE Ta(°C)
200
Ids(A)
0.0
0
1
2
3
Vgs(V)
4
5
Vds-Ids CHARACTERISTICS
1.5
Ta=+25°C
Vgs=10V
Vgs=9V
Vgs=8V
Vgs=7V
Vgs=6V
Vds VS. Ciss CHARACTERISTICS
20
18
16
14
Ciss(pF)
12
10
8
6
Vgs=4V
Vgs=3V
Ta=+25°C
f=1MHz
1
Ids(A)
Vgs=5V
0.5
4
2
0
0
5
10
Vds(V)
15
20
0
0
2
4
6
Vds(V)
8
10
Vds VS. Coss CHARACTERISTICS
20
18
16
14
Coss(pF)
10
8
6
4
2
0
0
5
10
Vds(V)
15
20
0
0
Crss(pF)
12
Ta=+25°C
f=1MHz
Vds VS. Crss CHARACTERISTICS
4
Ta=+25°C
f=1MHz
3
2
1
5
10
Vds(V)
15
20
RD00HVS1
17 Aug 2010
2/7
Silicon RF Power Semiconductors
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
RD00HVS1
Pin-Po CHARACTERISTICS
RoHS Compliance, Silicon MOSFET Power Transistor 175MHz,0.5W
TYPICAL CHARACTERISTICS
Pin-Po CHARACTERISTICS
35
30
Po(dBm) , Gp(dB) ,
Idd(A)
25
20
15
10
5
0
-15 -10
-5
0
5
Pin(dBm)
10
15
η½
Gp
Po
100
90
Pout(W) , Idd(A)
80
ηd(%)
70
60
Ta=+25°C
f=175MHz
Vdd=12.5V
Idq=50mA
1.2
Po
120
100
ηd
1.0
0.8
0.6
0.4
0.2
0.0
0
5
10
Pin(mW)
15
20
Idd
Ta=25°C
f=175MHz
Vdd=12.5V
Idq=50mA
80
60
40
20
0
ηd(%)
Idd(mA)
17 Aug 2010
50
40
30
Pin-Po CHARACTERISTICS
35
30
Po(dBm) , Gp(dB) ,
Idd(A)
25
20
15
10
5
0
-15 -10
-5
0
5
Pin(dBm)
10
15
Ta=+25°C
f=520MHz
Vdd=12.5V
Idq=50mA
η½
Gp
Po
Pin-Po CHARACTERISTICS
100
90
Pout(W) , Idd(A)
80
ηd(%)
70
60
50
40
30
1.4
1.2
1.0
0.8
0.6
0.4
Idd
ηd
Po
140
120
Ta=25°C
f=520MHz
Vdd=12.5V
Idq=50mA
100
80
60
40
20
0
ηd(%)
0.2
0.0
0
5
10
Pin(mW)
15
20
Vdd-Po CHARACTERISTICS
1.4
1.2
1
Po(W)
0.8
Idd
Ta=25°C
f=175MHz
Pin=5mW
Idq=50mA
Zg=ZI=50 ohm
Po
Vdd-Po CHARACTERISTICS
280
240
200
Po(W)
160
120
80
40
0
Idd(mA)
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0.0
4
6
8
10
Vdd(V)
12
14
Ta=25°C
f=520MHz
Pin=15mW
Idq=50mA
Zg=ZI=50 ohm
Po
320
280
240
200
Idd
0.6
0.4
0.2
0
4
6
8
10
Vdd(V)
12
14
160
120
80
40
0
RD00HVS1
3/7
Silicon RF Power Semiconductors
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
RD00HVS1
RoHS Compliance, Silicon MOSFET Power Transistor 175MHz,0.5W
TEST CIRCUIT(f=175MHz)
Vgg
V dd
C1
18.0m m
18.0m m
C2
10uF,50V
4.7kO HM
4m m
RF-in
2m m
19.5m m
L1
10pF
18pF
10.5m m
4.5m m
L2
270O HM
240pF
L1: Enam eled wire 4Turns,D:0.43m m ,2.46m m O .D
L2:LQ G 11A68N(68nH,m urata)
L3: Enam eled wire 9Turns,D:0.43m m ,2.46m m O .D
L4: Enam eled wire 7Turns,D:0.43m m ,2.46m m O .D
C 1,C2:1000pF,0.022uF in parallel
4m m
RD 00HV S1
5m m
L4
15m m
4.0m m
4m m 6.5m m 20.5m m
L3
3pF
180pF
250pF R F-out
18pF
Note:Board m aterial-glass epoxi substrate
Micro strip line width=1.0m m /50 O HM,er:4.8,t=0.6m m
TEST CIRCUIT(f=520MHz)
Vgg
Vdd
C1
W
4.7kOHM
8.5mm
RF-in
62pF
18pF
15pF
6.6nH
24pF
18.1nH
10pF
4mm
7.7mm
3.2mm
19mm
RD00HVS1
520MHz
0.6mm
2.5mm
6mm
C2
W 19mm
34.5nH
10.8nH
1.2mm
25.8mm
15mm
RF-out
190pF
5pF
22pF
10pF
3pF
7pF
Note: Board material- Glass epoxy copper-clad laminates FR-4
Micro strip line width=1mm,50 OHM, er:4.8, t=0.6mm
C1,C2:1000pF,0.022uF in parallel
W:Line width=1.0mm
RD00HVS1
17 Aug 2010
4/7
Silicon RF Power Semiconductors
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
RD00HVS1
S12
S22
(ang)
66.7
56.1
50.7
45.6
37.5
30.2
23.7
18.2
13.3
8.5
4.8
1.1
-2.3
-5.4
-8.6
-11.0
-13.5
-16.2
-17.8
-20.0
-22.1
-23.5
(mag)
0.928
0.889
0.865
0.843
0.796
0.754
0.716
0.688
0.668
0.652
0.640
0.633
0.627
0.626
0.625
0.627
0.630
0.634
0.639
0.645
0.654
0.661
(ang)
-24.7
-36.5
-42.0
-47.2
-56.4
-64.4
-71.5
-77.6
-83.4
-88.7
-93.3
-97.9
-102.1
-105.9
-109.6
-113.4
-116.8
-120.0
-123.3
-126.4
-129.3
-132.1
(mag)
0.027
0.039
0.043
0.048
0.054
0.058
0.060
0.062
0.063
0.063
0.064
0.063
0.062
0.061
0.060
0.058
0.056
0.054
0.053
0.051
0.048
0.046
RoHS Compliance, Silicon MOSFET Power Transistor 175MHz,0.5W
RD00HVS1 S-PARAMETER DATA (@Vdd=7.2V, Id=50mA)
Freq.
[MHz]
100
150
175
200
250
300
350
400
450
500
550
600
650
700
750
800
850
900
950
1000
1050
1100
S11
(mag)
1.004
0.987
0.972
0.957
0.929
0.898
0.875
0.857
0.844
0.831
0.824
0.815
0.810
0.809
0.807
0.806
0.808
0.808
0.810
0.811
0.814
0.817
(ang)
-35.2
-51.9
-59.7
-67.1
-80.1
-91.5
-101.4
-110.0
-117.3
-124.1
-130.0
-135.0
-139.9
-144.1
-148.1
-151.8
-155.1
-158.0
-161.1
-163.9
-166.5
-168.9
S21
(mag)
13.480
12.911
12.500
12.035
11.030
10.055
9.157
8.322
7.642
6.991
6.432
5.963
5.480
5.103
4.769
4.420
4.161
3.900
3.639
3.466
3.254
3.045
(ang)
158.7
147.1
141.6
136.2
126.6
118.7
111.3
104.9
99.3
93.9
89.5
84.9
80.7
77.0
73.1
69.9
66.8
63.1
60.3
57.7
54.1
51.9
RD00HVS1 S-PARAMETER DATA (@Vdd=12.5V, Id=50mA)
Freq.
[MHz]
100
150
175
200
250
300
350
400
450
500
550
600
650
700
750
800
850
900
950
1000
1050
1100
S11
(mag)
1.005
0.995
0.980
0.967
0.943
0.916
0.891
0.877
0.862
0.852
0.844
0.835
0.828
0.824
0.823
0.820
0.821
0.822
0.823
0.822
0.826
0.828
(ang)
-33.4
-49.7
-57.5
-64.6
-77.5
-88.9
-98.7
-107.6
-115.0
-121.9
-128.1
-133.3
-138.3
-142.7
-146.8
-150.6
-153.9
-157.2
-160.2
-163.1
-165.9
-168.4
S21
(mag)
13.343
12.874
12.525
12.108
11.193
10.249
9.403
8.582
7.916
7.273
6.706
6.224
5.755
5.358
5.024
4.671
4.398
4.134
3.853
3.677
3.459
3.241
(ang)
160.0
149.0
143.6
138.3
129.0
121.2
113.9
107.3
101.9
96.4
91.9
87.3
83.0
79.3
75.4
72.0
68.9
65.2
62.3
59.7
56.3
53.9
(mag)
0.024
0.034
0.038
0.042
0.047
0.052
0.054
0.056
0.057
0.057
0.057
0.058
0.056
0.056
0.054
0.053
0.051
0.050
0.048
0.047
0.044
0.042
S12
(ang)
68.3
57.9
53.2
47.8
39.3
32.3
26.2
20.6
15.7
11.2
7.5
3.4
0.2
-2.5
-5.8
-8.4
-10.5
-13.3
-15.2
-17.2
-19.5
-20.2
(mag)
0.898
0.865
0.845
0.826
0.781
0.743
0.709
0.681
0.661
0.644
0.633
0.625
0.619
0.618
0.616
0.615
0.618
0.622
0.628
0.633
0.640
0.646
S22
(ang)
-22.6
-33.1
-38.0
-42.9
-51.3
-58.9
-65.6
-71.5
-77.0
-82.0
-86.6
-91.2
-95.2
-99.0
-102.9
-106.6
-110.1
-113.2
-116.5
-119.8
-122.9
-125.7
RD00HVS1
17 Aug 2010
5/7
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