Small Signal Field-Effect Transistor, 0.32A I(D), 30V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-226AA, TO-226AA (TO-92), 3 PIN
| 参数名称 | 属性值 |
| 厂商名称 | TEMIC |
| 包装说明 | CYLINDRICAL, O-PBCY-W3 |
| Reach Compliance Code | unknown |
| 配置 | SINGLE WITH BUILT-IN DIODE |
| 最小漏源击穿电压 | 30 V |
| 最大漏极电流 (ID) | 0.32 A |
| 最大漏源导通电阻 | 2.5 Ω |
| FET 技术 | METAL-OXIDE SEMICONDUCTOR |
| 最大反馈电容 (Crss) | 60 pF |
| JEDEC-95代码 | TO-226AA |
| JESD-30 代码 | O-PBCY-W3 |
| 元件数量 | 1 |
| 端子数量 | 3 |
| 工作模式 | ENHANCEMENT MODE |
| 封装主体材料 | PLASTIC/EPOXY |
| 封装形状 | ROUND |
| 封装形式 | CYLINDRICAL |
| 极性/信道类型 | P-CHANNEL |
| 认证状态 | Not Qualified |
| 表面贴装 | NO |
| 端子形式 | WIRE |
| 端子位置 | BOTTOM |
| 晶体管应用 | SWITCHING |
| 晶体管元件材料 | SILICON |
| VP0300L | VQ2001J | VQ2001P | VP0300M | |
|---|---|---|---|---|
| 描述 | Small Signal Field-Effect Transistor, 0.32A I(D), 30V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-226AA, TO-226AA (TO-92), 3 PIN | Power Field-Effect Transistor, 0.6A I(D), 30V, 2ohm, 4-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, | Power Field-Effect Transistor, 0.6A I(D), 30V, 2ohm, 4-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, | Small Signal Field-Effect Transistor, 0.5A I(D), 30V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-237AA, TO-237, 3 PIN |
| 厂商名称 | TEMIC | TEMIC | TEMIC | TEMIC |
| Reach Compliance Code | unknown | unknown | unknown | unknow |
| 配置 | SINGLE WITH BUILT-IN DIODE | SEPARATE, 4 ELEMENTS WITH BUILT-IN DIODE | SEPARATE, 4 ELEMENTS WITH BUILT-IN DIODE | SINGLE WITH BUILT-IN DIODE |
| 最小漏源击穿电压 | 30 V | 30 V | 30 V | 30 V |
| 最大漏极电流 (ID) | 0.32 A | 0.6 A | 0.6 A | 0.5 A |
| 最大漏源导通电阻 | 2.5 Ω | 2 Ω | 2 Ω | 2.5 Ω |
| FET 技术 | METAL-OXIDE SEMICONDUCTOR | METAL-OXIDE SEMICONDUCTOR | METAL-OXIDE SEMICONDUCTOR | METAL-OXIDE SEMICONDUCTOR |
| JESD-30 代码 | O-PBCY-W3 | R-PDIP-T14 | R-PDIP-T14 | O-PBCY-W3 |
| 元件数量 | 1 | 4 | 4 | 1 |
| 端子数量 | 3 | 14 | 14 | 3 |
| 工作模式 | ENHANCEMENT MODE | ENHANCEMENT MODE | ENHANCEMENT MODE | ENHANCEMENT MODE |
| 封装主体材料 | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY |
| 封装形状 | ROUND | RECTANGULAR | RECTANGULAR | ROUND |
| 封装形式 | CYLINDRICAL | IN-LINE | IN-LINE | CYLINDRICAL |
| 极性/信道类型 | P-CHANNEL | P-CHANNEL | P-CHANNEL | P-CHANNEL |
| 认证状态 | Not Qualified | Not Qualified | Not Qualified | Not Qualified |
| 表面贴装 | NO | NO | NO | NO |
| 端子形式 | WIRE | THROUGH-HOLE | THROUGH-HOLE | WIRE |
| 端子位置 | BOTTOM | DUAL | DUAL | BOTTOM |
| 晶体管应用 | SWITCHING | SWITCHING | SWITCHING | SWITCHING |
| 晶体管元件材料 | SILICON | SILICON | SILICON | SILICON |
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