CM450DXL-34SA
Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272
www.pwrx.com
Dual IGBT
NX-Series Module
450 Amperes/1700 Volts
AU
F
AD
18
G
H
17
J
H
16
15
J
A
D
AX
E
AR
AS
K
13
H
12
J
AK
11
AT
14
MN
L
10
9
G
H
U T
AQ
P
1
DETAIL “C & D”
AB (6 PLACES)
8
7
Z
Y
EB
P V
H
AM
DETAIL “A”
AP
AN
QR S
2
3
W
P
4
X
DETAIL “A”
AA (4 PLACES)
AL
DETAIL “B”
BA
5
6
M
H
AE
B
M
AH
AK
DETAIL “B”
AG
11
45°
BA
G
AC
AG
AF
AZ
DETAIL “C”
C
AV
AJ
AW
AU
AY
BB
G
10
Es1 G1 TH2
(18) (17) (16)
C1(1)
C1(2)
E2(3)
E2(4)
Tr1
Di1
NC
(5)
NC
(6)
Th
NTC
TH1 Cs1
(15) (14)
Es2 G2 Cs2
(13) (12) (11)
NC(10)
Tr2
Di2
NC(9)
C2E1 (8)
C2E1 (7)
Tolerance Otherwise Specified (mm)
Division of Dimension Tolerance
0.5 to 3
±0.2
over
3 to 6
±0.3
over
6 to 30
±0.5
over 30 to 120
±0.8
over 120 to 400
±1.2
The tolerance of size between
terminals is assumed to ±0.4
H
9
Description:
Powerex IGBT Modules are
designed for use in switching
applications. Each module
consists of two IGBT Transistors
in a half-bridge configuration with
each transistor having a reverse-
connected super-fast recovery
free-wheel diode. All components
and interconnects are isolated from
the heat sinking baseplate, offering
simplified system assembly and
thermal management.
Features:
£
Low Drive Power
£
Low V
CE(sat)
£
Discrete Super-Fast Recovery
Free-Wheel Diode
£
Isolated Baseplate for Easy
Heat Sinking
Applications:
£
AC Motor Control
£
Motion/Servo Control
£
Photovoltaic/Fuel Cell
Ordering Information:
Example: Select the complete
module number you desire from
the table below -i.e.
CM450DXL-34SA is a 1700V
(V
CES
), 450 Ampere Dual
IGBT Power Module.
Type
CM
Current Rating
Amperes
450
V
CES
Volts (x 50)
34
DETAIL “D”
Outline Drawing and Circuit Diagram
Dimensions
A
B
C
D
E
F
G
H
J
K
L
M
N
P
Q
R
S
T
U
V
W
X
Y
Z
AA
06/13 Rev. 1
Inches
5.98
4.79
0.81
5.39
4.33±0.02
0.53
0.81±0.012
0.15
0.6
0.74±0.012
0.75
0.3
0.42
0.86
3.72±0.012
3.48
1.08
1.62
1.95
1.53
0.47
0.31
0.26
0.61
Dia.
Millimeters
152.0
121.7
20.5
137.0
110.0±0.5
13.5
20.5±0.3
3.81
15.24
19.05±0.3
19.24
7.75
10.74
22.0
94.5±0.3
88.53
27.53
41.22
49.72
39.0
12.0
8.0
6.5
15.64
5.5 Dia.
Dimensions
AB
AC
AD
AE
AF
AG
AH
AJ
AK
AL
AM
AN
AP
AQ
AR
AS
AT
AU
AV
AW
AX
AY
AZ
BA
BB
Inches
M6 Metric
0.6
0.14
4.16±0.012
0.55
0.27
0.14
0.67+0.04/-0.02
0.12
0.04
0.02
0.05
0.18
0.5
0.18 Dia.
0.10 Dia.
0.09 Dia.
0.45±0.012
0.36±0.012
0.46±0.012
4.18±0.012
0.017±0.012
0.51
0.54
0.53±0.012
Millimeters
M6
15.14
3.6
105.9±0.3
14.0
7.0
3.5
17.0+1.0/-0.5
3.0
1.15
0.65
1.2
4.5
12.5
4.5 Dia.
2.6 Dia.
2.25 Dia.
11.36±0.3
9.15±0.3
11.8±0.3
106.3±0.3
0.45±0.3
13.0
13.7
11.35±0.3
1
Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272
www.pwrx.com
CM450DXL-34SA
Dual IGBT NX-Series Module
450 Amperes/1700 Volts
Absolute Maximum Ratings,
T
j
= 25°C unless otherwise specified
Characteristics
Collector-Emitter Voltage (V
GE
= 0V)
Gate-Emitter Voltage (V
CE
= 0V)
Collector Current (DC, T
C
= 125°C)
*2,*4
Collector Current (Pulse, Repetitive)
*3
Total Power Dissipation (T
C
= 25°C)
*2,*4
Emitter Current
*2
Emitter Current (Pulse, Repetitive)
*3
Isolation Voltage (Terminals to Baseplate, RMS, f = 60Hz, AC 1 minute)
Maximum Junction Temperature, Instantaneous Event (Overload)
Maximum Case Temperature
*4
Operating Junction Temperature, Continuous Operation (Under Switching)
Storage Temperature
*1 Represent ratings and characteristics of the anti-parallel, emitter-to-collector free wheeling
diode (FWDi).
*2 Junction temperature (T
j
) should not increase beyond maximum junction
temperature (T
j(max)
) rating.
*3 Pulse width and repetition rate should be such that device junction temperature (T
j
)
does not exceed T
j(max)
rating.
*4 Case temperature (T
C
) and heatsink temperature (T
s
) is measured on the surface
(mounting side) of the baseplate and the heatsink side just under the chips.
Refer to the figure to the right for chip location.
The heatsink thermal resistance should be measured just under the chips.
24.2
45.1
47.2
Symbol
V
CES
V
GES
I
C
I
CRM
P
tot
I
E
*1
I
ERM
*1
V
ISO
T
j(max)
T
C(max)
T
j(op)
T
stg
92.1
Rating
1700
±20
450
900
4410
450
900
4000
175
125
-40 to +150
-40 to +125
Units
Volts
Volts
Amperes
Amperes
Watts
Amperes
Amperes
Volts
°C
°C
°C
°C
0
0
18.5
29.5
30.5
43.6
44.6
70.8
84.9
Tr1
Di1
Th
Tr1
Di1
Tr1
Di1
0
27.0
41.1
Tr2
Di2
Tr2
Di2
Tr2
Di2
70.2
84.3
0
27.6
74.5
Tr1 / Tr2: IGBT, Di1 / Di2: FWDi, Th: NTC Thermistor
Each mark points to the center position of each chip.
2
95.8
06/13 Rev. 1
Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272
www.pwrx.com
CM450DXL-34SA
Dual IGBT NX-Series Module
450 Amperes/1700 Volts
Electrical Characteristics,
T
j
= 25°C unless otherwise specified
Characteristics
Collector-Emitter Cutoff Current
Gate-Emitter Leakage Current
Gate-Emitter Threshold Voltage
Collector-Emitter Saturation Voltage
Symbol
I
CES
I
GES
V
GE(th)
V
CE(sat)
(Terminal)
Collector-Emitter Saturation Voltage
V
CE(sat)
(Chip)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Charge
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Emitter-Collector Voltage
C
ies
C
oes
C
res
Q
G
t
d(on)
t
r
t
d(off)
t
f
V
EC
*1
(Terminal)
Emitter-Collector Voltage
V
EC
*1
(Chip)
Reverse Recovery Time
Reverse Recovery Charge
Turn-on Switching Energy per Pulse
Turn-off Switching Energy per Pulse
Reverse Recovery Energy per Pulse
Internal Lead Resistance
Internal Gate Resistance
t
rr
*1
Q
rr
*1
E
on
E
off
E
rr
*1
R
CC' + EE'
r
g
I
E
= 450A, V
GE
= 0V, T
j
= 25°C
*5
I
E
= 450A, V
GE
= 0V, T
j
= 125°C
*5
I
E
= 450A, V
GE
= 0V, T
j
= 150°C
*5
I
E
= 450A, V
GE
= 0V, T
j
= 25°C
*5
I
E
= 450A, V
GE
= 0V, T
j
= 125°C
*5
I
E
= 450A, V
GE
= 0V, T
j
= 150°C
*5
V
CC
= 1000V, I
E
= 450A, V
GE
=
±15V
R
G
= 0Ω, Inductive Load
V
CC
= 1000V, I
C
= I
E
= 450A, V
GE
=
±15V
R
G
= 0Ω, T
j
= 150°C
Inductive Load
Main Terminals-Chip,
Per Switch,T
C
= 25°C
*4
Per Switch
24.2
0
Test Conditions
V
CE
= V
CES
, V
GE
= 0V
V
GE
= V
GES
, V
CE
= 0V
I
C
= 45mA, V
CE
= 10V
I
C
= 450A, V
GE
= 15V, T
j
= 25°C
*5
I
C
= 450A, V
GE
= 15V, T
j
= 125°C
*5
I
C
= 450A, V
GE
= 15V, T
j
= 150°C
*5
I
C
= 450A, V
GE
= 15V, T
j
= 25°C
*5
I
C
= 450A, V
GE
= 15V, T
j
= 125°C
*5
I
C
= 450A, V
GE
= 15V, T
j
= 150°C
*5
V
CE
= 10V, V
GE
= 0V
V
CC
= 1000V, I
C
= 450A, V
GE
= 15V
V
CC
= 1000V, I
C
= 450A, V
GE
=
±15V,
R
G
= 0Ω, Inductive Load
Min.
—
—
5.4
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
45.1
47.2
Typ.
—
—
6.0
2.0
2.2
2.25
1.9
2.1
2.15
—
—
—
2480
—
—
—
—
4.1
2.9
2.7
4.0
2.8
2.6
—
17
147
129
73
—
3.2
92.1
Max.
1.0
0.5
6.6
2.5
—
—
2.4
—
—
119
9.8
2.2
—
900
150
900
400
5.3
—
—
5.2
—
—
300
—
—
—
—
0.6
—
Units
mA
µA
Volts
Volts
Volts
Volts
Volts
Volts
Volts
nF
nF
nF
nC
ns
ns
ns
ns
Volts
Volts
Volts
Volts
Volts
Volts
ns
µC
mJ
mJ
mJ
mΩ
Ω
*1 Represent ratings and characteristics of the anti-parallel, emitter-to-collector free wheeling
diode (FWDi).
*4 Case temperature (T
C
) and heatsink temperature (T
s
) is measured on the surface
(mounting side) of the baseplate and the heatsink side just under the chips.
Refer to the figure to the right for chip location.
The heatsink thermal resistance should be measured just under the chips.
*5 Pulse width and repetition rate should be such as to cause negligible temperature rise.
0
18.5
29.5
30.5
43.6
44.6
70.8
84.9
Tr1
Di1
Th
Tr1
Di1
Tr1
Di1
0
27.0
41.1
Tr2
Di2
Tr2
Di2
Tr2
Di2
70.2
84.3
0
27.6
74.5
Tr1 / Tr2: IGBT, Di1 / Di2: FWDi, Th: NTC Thermistor
Each mark points to the center position of each chip.
06/13 Rev. 1
95.8
3
Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272
www.pwrx.com
CM450DXL-34SA
Dual IGBT NX-Series Module
450 Amperes/1700 Volts
Electrical Characteristics,
T
j
= 25°C unless otherwise specified (continued)
NTC Thermistor Part
Characteristics
Zero Power Resistance
Deviation of Resistance
B Constant
Power Dissipation
Symbol
R
25
∆R/R
B
(25/50)
P
25
Test Conditions
T
C
= 25°C
*4
T
C
= 100°C, R
100
= 493Ω
*4
Approximate by Equation
*6
T
C
= 25°C
*4
Min.
4.85
-7.3
—
—
Typ.
5.00
—
3375
—
Max.
5.15
+7.8
—
10
Units
kΩ
%
K
mW
Thermal Resistance Characteristics
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Case
Contact Thermal Resistance,
Case to Heatsink
*2
R
th(j-c)
Q
R
th(j-c)
D
R
th(c-f)
Per Inverter IGBT
*4
Per Inverter FWDi
*4
Thermal Grease Applied,
Per 1 Module
*4,*7
—
—
—
—
—
7
34
52
—
K/kW
K/kW
K/kW
Mechanical Characteristics
Mounting Torque
Creepage Distance
Clearance
Weight
Flatness of Baseplate
M
t
M
s
d
s
d
a
m
e
c
On Centerline X, Y
*8
Main Terminals, M6 Screw
Mounting to Heatsink, M5 Screw
Terminal to Terminal
Terminal to Baseplate
Terminal to Terminal
Terminal to Baseplate
31
22
22.5
16.8
15.5
11.3
—
±0
35
27
—
—
—
—
690
—
40
31
—
—
—
—
—
+100
in-lb
in-lb
mm
mm
mm
mm
Grams
µm
Recommended Operating Conditons,
T
a
= 25°C
DC Supply Voltage
Gate-Emitter Drive Voltage
External Gate Resistance
V
CC
V
GE(on)
R
G
Applied Across C1-E2 Terminals
Applied Across
G1-Es1/G2-Es2 Terminals
Per Switch
24.2
45.1
47.2
—
13.5
0
92.1
1000
15.0
—
1200
16.5
18
Volts
Volts
Ω
*4 Case temperature (T
C
) and heatsink temperature (T
s
) is measured on the surface
(mounting side) of the baseplate and the heatsink side just under the chips.
Refer to the figure to the right for chip location.
The heatsink thermal resistance should be measured just under the chips.
R
25
1
1
*6 B
(25/50)
= In(
)/(
–
)
R
50
T
25
T
50
R
25
; Resistance at Absolute Temperature T
25
[K]; T
25
= 25 [°C] + 273.15 = 298.15 [K]
R
50
; Resistance at Absolute Temperature T
50
[K]; T
50
= 50 [°C] + 273.15 = 323.15 [K]
*7 Typical value is measured by using thermally conductive grease of
λ
= 0.9 [W/(m
•
K)].
*8 Baseplate (mounting side) flatness measurement points (X, Y) are shown in the figure below.
– : CONCAVE
+ : CONVEX
Y
0
0
18.5
29.5
30.5
43.6
44.6
70.8
84.9
Tr1
Di1
Th
Tr1
Di1
Tr1
Di1
0
27.0
41.1
Tr2
Di2
Tr2
Di2
Tr2
Di2
70.2
84.3
X
27.6
74.5
95.8
MOUNTING SIDE
MOUNTING SIDE
LABEL SIDE
– : CONCAVE
+ : CONVEX
4
0
Tr1 / Tr2: IGBT, Di1 / Di2: FWDi, Th: NTC Thermistor
Each mark points to the center position of each chip.
06/13 Rev. 1
Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272
www.pwrx.com
CM450DXL-34SA
Dual IGBT NX-Series Module
450 Amperes/1700 Volts
OUTPUT CHARACTERISTICS
(INVERTER PART - TYPICAL)
COLLECTOR-EMITTER
SATURATION VOLTAGE CHARACTERISTICS
(INVERTER PART - TYPICAL)
900
COLLECTOR-EMITTER
SATURATION VOLTAGE, V
CE(sat)
, (VOLTS)
COLLECTOR CURRENT, I
C
, (AMPERES)
800
700
600
500
400
300
200
100
0
0
2
V
GE
= 20V
15
11
T
j
= 25°C
(Chip)
4.5
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0
0 100 200 300 400 500 600 700 800 900
COLLECTOR CURRENT, I
C
, (AMPERES)
(Chip)
T
j
= 25°C
T
j
= 125°C
T
j
= 150°C
10
9
8
4
6
8
10
COLLECTOR-EMITTER VOLTAGE, V
CE
, (VOLTS)
COLLECTOR-EMITTER
SATURATION VOLTAGE CHARACTERISTICS
(INVERTER PART - TYPICAL)
FREE-WHEEL DIODE
FORWARD CHARACTERISTICS
(INVERTER PART - TYPICAL)
10
COLLECTOR-EMITTER
SATURATION VOLTAGE, VCE(sat), (VOLTS)
10
3
T
j
= 25°C
(Chip)
I
C
= 900A
EMITTER CURRENT, I
E
, (AMPERES)
8
6
4
2
0
I
C
= 450A
I
C
= 270A
10
2
T
j
= 25°C
T
j
= 125°C
T
j
= 150°C
10
1
6
8
10
12
14
16
18
20
COLLECTOR CURRENT, I
C
, (AMPERES)
(Chip)
0
1
2
3
4
5
6
EMITTER-COLLECTOR VOLTAGE, V
EC
, (VOLTS)
06/13 Rev. 1
5
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