CM300EXS-24S
Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272
www.pwrx.com
Chopper IGBT
NX-Series Module
300 Amperes/1200 Volts
A
D
E
K
F
G
6
J
5
H
4
J
3
S
T
U
M
7
2
L
N
8
AL (4 PLACES)
AK (4 PLACES)
1
P B
Q
R
DETAIL "A"
DETAIL "B"
Y
V W X
C
Tolerance Otherwise Specified (mm)
Division of Dimension Tolerance
0.5 to 3
±0.2
over
3 to 6
±0.3
over
6 to 30
±0.5
over 30 to 120
±0.8
over 120 to 400
±1.2
The tolerance of size between
terminals is assumed to ±0.4
AC
AD
TH1
(6)
Th
N
T
C
TH2
(5)
Es(4) G(3)
Tr
C(2)
A(1)
Di
AB
AA
AE
AG
AF
E(7)
K(8)
Z
AH AJ
Description:
Powerex IGBT Modules are
designed for use in switching
applications. Each module
consists of one IGBT Transistor
and one super-fast recovery diode.
All components and interconnects
are isolated from the heat sinking
baseplate, offering simplified
system assembly and thermal
management.
Features:
£
Low Drive Power
£
Low V
CE(sat)
£
Discrete Super-Fast
Recovery Clamp Diode
£
RoHS Compliant
£
Isolated Copper Baseplate
for Easy Heat Sinking
Applications:
£
DC/DC Converter
£
DC Motor Control
£
Brake Circuit
Ordering Information:
Example: Select the complete
module number you desire from
the table below -i.e.
CM300EXS-24S is a 1200V
(V
CES
), 300 Ampere Chopper
IGBT Power Module.
Type
CM
Current Rating
Amperes
300
V
CES
Volts (x 50)
24
Outline Drawing and Circuit Diagram
Dimensions
A
B
C
D
E
F
G
H
J
K
L
M
N
P
Q
R
S
T
Inches
4.09
2.44
0.47
3.5
2.44
0.53
0.69
0.75
0.14
0.16
1.97
0.55
0.87
2.26
1.83
2.9
0.8
0.67
Millimeters
104.0
62.0
11.9
89.0
62.0
13.5
17.66
19.05
3.8
4.2
50.0
14.0
22.0
57.5
46.5
73.71
20.5
17.0
Dimensions
U
V
W
X
Y
Z
AA
AB
AC
AD
AE
AF
AG
AH
AJ
AK
AL
Inches
0.27
0.67
0.64
0.51
0.17
0.49
0.12
0.17 Dia.
0.102 Dia.
0.088 Dia.
0.15
0.045
0.025
0.05
0.29
0.21 Dia.
M5
Millimeters
7.0
17.0
16.4
13.1
4.4
12.5
3.0
4.3 Dia.
2.6 Dia.
2.25 Dia.
3.81
1.15
0.65
1.2
7.4
5.5 Dia.
M5
07/12 Rev. 0
1
Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272
www.pwrx.com
CM300EXS-24S
Chopper IGBT NX-Series Module
300 Amperes/1200 Volts
Absolute Maximum Ratings,
T
j
= 25°C unless otherwise specified
Characteristics
Collector-Emitter Voltage (V
GE
= 0V)
Gate-Emitter Voltage (V
CE
= 0V)
Collector Current (DC, T
C
= 119°C)
*2
Collector Current (Pulse, Repetitive)
*3
Total Power Dissipation (T
C
= 25°C)
*2,*4
Repetitive Peak Reverse Voltage (Clamp Diode Part, V
GE
= 0V)
Forward Current (Clamp Diode Part, T
C
= 25°C)
*2,*4
Forward Current (Clamp Diode Part, Pulse, Repetitive)
*3
Maximum Junction Temperature
Operating Junction Temperature
Storage Temperature
Case Temperature
Isolation Voltage (Terminals to Baseplate, f = 60Hz, AC 1 minute)
*1 Represent ratings and characteristics of the anti-parallel, emitter-to-collector clamp diode.
*2 Case temperature (T
C
) and heatsink temperature (T
s
) is measured on the surface
(mounting side) of the baseplate and the heatsink side just under the chips.
Refer to the figure to the right for chip location.
The heatsink thermal resistance should be measured just under the chips.
*3 Pulse width and repetition rate should be such that device junction temperature (T
j
)
does not exceed T
j(max)
rating.
*4 Junction temperature (T
j
) should not increase beyond maximum junction
temperature (T
j(max)
) rating.
Symbol
V
CES
V
GES
I
C
I
CRM
P
tot
V
RRM
I
F
*1
I
FRM
*1
T
j(max)
T
j(op)
T
stg
T
C
V
ISO
Rating
1200
±20
300
600
2270
1200
300
600
+175
-40 to +150
-40 to +125
-40 to +125
2500
Units
Volts
Volts
Amperes
Amperes
Watts
Volts
Amperes
Amperes
°C
°C
°C
°C
Volts
32.5
0
51.1
42.7
29.5
16.1
Th
Tr
Tr
Di Di
0
LABEL SIDE
Each mark points to the center position of each chip.
Tr: IGBT
Di: Clamp Diode
Th: NTC Thermistor
2
35.9
40.7
35.4
07/12 Rev. 0
Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272
www.pwrx.com
CM300EXS-24S
Chopper IGBT NX-Series Module
300 Amperes/1200 Volts
Electrical Characteristics,
T
j
= 25°C unless otherwise specified
Characteristics
Collector-Emitter Cutoff Current
Gate-Emitter Leakage Current
Gate-Emitter Threshold Voltage
Collector-Emitter Saturation Voltage
Symbol
I
CES
I
GES
V
GE(th)
V
CE(sat)
(Terminal)
Collector-Emitter Saturation Voltage
V
CE(sat)
(Chip)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Charge
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Repetitive Peak Reverse Current
forward Voltage Drop
Clamp Di Part
Forward Voltage Drop
Clamp Di Part
Reverse Recovery Time
Reverse Recovery Charge
Turn-on Switching Energy per Pulse
Turn-off Switching Energy per Pulse
Reverse Recovery Energy per Pulse
Internal Lead Resistance
Internal Gate Resistance
C
ies
C
oes
C
res
Q
G
t
d(on)
t
r
t
d(off)
t
f
I
RRM
V
F
*1
(Terminal)
V
F
*1
(Chip)
t
rr
*1
Q
rr
*1
E
on
E
off
E
rr
*1
R
CC' + EE'
r
g
32.5
35.9
40.7
35.4
Test Conditions
V
CE
= V
CES
, V
GE
= 0V
±V
GE
= V
GES
, V
CE
= 0V
I
C
= 30mA, V
CE
= 10V
I
C
= 300A, V
GE
= 15V, T
j
= 25°C
*6
I
C
= 300A, V
GE
= 15V, T
j
= 125°C
*6
I
C
= 300A, V
GE
= 15V, T
j
= 150°C
*6
I
C
= 300A, V
GE
= 15V, T
j
= 25°C
*6
I
C
= 300A, V
GE
= 15V, T
j
= 125°C
*6
I
C
= 300A, V
GE
= 15V, T
j
= 150°C
*6
V
CE
= 10V, V
GE
= 0V
V
CC
= 600V, I
C
= 300A, V
GE
= 15V
V
CC
= 600V, I
C
= 300A, V
GE
=
±15V,
R
G
= 0Ω, Inductive Load
V
R
= V
RRM
I
F
= 300A, V
GE
= 0V, T
j
= 25°C
*6
I
F
= 300A, V
GE
= 0V, T
j
= 125°C
*6
I
F
= 300A, V
GE
= 0V, T
j
= 150°C
*6
I
F
= 300A, V
GE
= 0V, T
j
= 25°C
*6
I
F
= 300A, V
GE
= 0V, T
j
= 125°C
*6
I
F
= 300A, V
GE
= 0V, T
j
= 150°C
*6
V
CC
= 600V, I
F
= 300A, V
GE
=
±15V
R
G
= 0Ω, Inductive Load, Clamp Di Part
V
CC
= 600V, I
C
= I
F
= 300A,
V
GE
=
±15V,
R
G
= 0Ω, T
j
= 150°C,
Inductive Load, Clamp Di Part
Main Terminals-Chip,
Per Switch,T
C
= 25°C
*2
—
Min.
—
—
5.4
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
1.80
—
—
—
—
—
—
—
—
—
—
Typ.
—
—
6
1.80
2.00
2.05
1.70
1.90
1.95
—
—
—
700
—
—
—
—
—
1.80
1.80
—
1.70
1.70
1.70
—
16.0
41.0
32.0
22.0
—
6.5
Max.
1
0.5
6.6
2.25
—
—
2.15
—
—
30
6.0
0.5
—
800
200
600
300
1
2.25
—
Volts
2.15
—
—
300
—
—
—
—
—
—
Units
mA
µA
Volts
Volts
Volts
Volts
Volts
Volts
Volts
nF
nF
nF
nC
ns
ns
ns
ns
mA
Volts
Volts
Volts
Volts
Volts
ns
µC
mJ
mJ
mJ
mΩ
Ω
*1 Represent ratings and characteristics of the anti-parallel, emitter-to-collector clamp diode.
*2 Case temperature (T
C
) and heatsink temperature (T
s
) is measured on the surface
(mounting side) of the baseplate and the heatsink side just under the chips.
Refer to the figure to the right for chip location.
The heatsink thermal resistance should be measured just under the chips.
*5 Pulse width and repetition rate should be such as to cause negligible temperature rise.
0
51.1
42.7
29.5
16.1
Th
Tr
Tr
Di Di
0
LABEL SIDE
Each mark points to the center position of each chip.
Tr: IGBT
Di: Clamp Diode
Th: NTC Thermistor
07/12 Rev. 0
3
Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272
www.pwrx.com
CM300EXS-24S
Chopper IGBT NX-Series Module
300 Amperes/1200 Volts
Electrical Characteristics,
T
j
= 25°C unless otherwise specified (continued)
NTC Thermistor Part
Characteristics
Zero Power Resistance
Deviation of Resistance
B Constant
Power Dissipation
Symbol
R
25
∆R/R
B
(25/50)
P
25
Test Conditions
T
C
= 25°C
*2
T
C
= 100°C, R
100
= 493Ω
Approximate by Equation
*8
T
C
= 25°C
*2
Min.
4.85
-7.3
—
—
Typ.
5.00
—
3375
—
Max.
5.15
+7.8
—
10
Units
kΩ
%
K
mW
Thermal Resistance Characteristics
Thermal Resistance, Junction to Case
*2
Thermal Resistance, Junction to Case
*2
Contact Thermal Resistance,
Case to Heatsink
*2
R
th(j-c)
Q
R
th(j-c)
D
R
th(c-f)
Per IGBT
Per Clamp Diode
Thermal Grease Applied
(Per 1 Module)
*7
—
—
—
—
—
25
0.066
0.12
—
K/W
K/W
K/kW
Mechanical Characteristics
Mounting Torque
Creepage Distance
Clearance
Weight
Flatness of Baseplate
M
t
M
s
d
s
d
a
m
e
c
On Centerline X, Y
*5
Main Terminals, M5 Screw
Mounting to Heatsink, M5 Screw
Terminal to Terminal
Terminal to Baseplate
Terminal to Terminal
Terminal to Baseplate
22
22
20
17
12
10
—
-100
27
27
—
—
—
—
210
—
31
31
—
—
—
—
—
+100
in-lb
in-lb
mm
mm
mm
mm
Grams
µm
Recommended Operating Conditons,
T
a
= 25°C
(DC) Supply Voltage
Gate-Emitter Drive Voltage
External Gate Resistance
V
CC
V
GE(on)
R
G
32.5
35.9
40.7
35.4
Applied Across P-N
Applied Across G-E
—
13.5
0
600
15.0
—
850
16.5
30
Volts
Volts
Ω
*2 Case temperature (T
C
) and heatsink temperature (T
s
) is measured on the surface
(mounting side) of the baseplate and the heatsink side just under the chips.
Refer to the figure to the right for chip location.
The heatsink thermal resistance should be measured just under the chips.
*5 Baseplate (mounting side) flatness measurement points (X, Y) are shown in the figure below.
*7 Typical value is measured by using thermally conductive grease of
λ
= 0.9 [W/(m • K)].
R
25
1
1
*8 B
(25/50)
= In(
)/(
–
)
R
50
T
25
T
50
R
25
; Resistance at Absolute Temperature T
25
[K]; T
25
= 25 [°C] + 273.15 = 298.15 [K]
R
50
; Resistance at Absolute Temperature T
50
[K]; T
50
= 50 [°C] + 273.15 = 323.15 [K]
– : CONCAVE
51.1
42.7
29.5
16.1
+ : CONVEX
0
Th
Tr
Tr
Di Di
Y
X
MOUNTING
SIDE
0
LABEL SIDE
Each mark points to the center position of each chip.
Tr: IGBT
Di: Clamp Diode
Th: NTC Thermistor
MOUNTING SIDE
– : CONCAVE
MOUNTING SIDE
+ : CONVEX
4
07/12 Rev. 0
Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272
www.pwrx.com
CM300EXS-24S
Chopper IGBT NX-Series Module
300 Amperes/1200 Volts
OUTPUT CHARACTERISTICS
(CHIP - TYPICAL)
COLLECTOR-EMITTER
SATURATION VOLTAGE CHARACTERISTICS
(CHIP - TYPICAL)
600
500
400
COLLECTOR-EMITTER
SATURATION VOLTAGE, V
CE(sat)
, (VOLTS)
T
j
=
25°C
15
3.5
V
GE
= 20V
13.5
12
3.0
2.5
2.0
1.5
1.0
0.5
0
0
COLLECTOR CURRENT, I
C
, (AMPERES)
V
GE
= 15V
T
j
= 25°C
T
j
= 125°C
T
j
= 150°C
11
300
200
100
0
10
9
0
2
4
6
8
10
100
200
300
400
500
600
COLLECTOR-EMITTER VOLTAGE, V
CE
, (VOLTS)
COLLECTOR CURRENT, I
C
, (AMPERES)
COLLECTOR-EMITTER
SATURATION VOLTAGE CHARACTERISTICS
(CHIP - TYPICAL)
FREE-WHEEL DIODE
FORWARD CHARACTERISTICS
(CHIP - TYPICAL)
10
COLLECTOR-EMITTER
SATURATION VOLTAGE, VCE(sat), (VOLTS)
10
3
T
j
= 25°C
EMITTER CURRENT, I
E
, (AMPERES)
8
6
4
2
0
I
C
= 600A
I
C
= 300A
I
C
= 120A
V
GE
= 15V
T
j
= 25°C
T
j
= 125°C
T
j
= 150°C
10
2
6
8
10
12
14
16
18
20
10
1
0
0.5
1.0
1.5
2.0
2.5
3.0
GATE-EMITTER VOLTAGE, V
GE
, (VOLTS)
EMITTER-COLLECTOR VOLTAGE, V
EC
, (VOLTS)
07/12 Rev. 0
5
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