CM300DU-24NFH
Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272
Dual IGBTMOD™
NFH-Series Module
300 Amperes/1200 Volts
A
S
K
Q
M
(3 PLACES)
B E
E1
C2E1
E2
C1
G1
D
K
K
S
L
(4 PLACES)
V
G2
E2
G
H
G
AA
N J
Q
Z
F
F
T
Y
X
V
Q
P
P
Q
P
U
S
W
C
LABEL
R
G2
E2
C2E1
E2
C1
E1
G1
Description:
Powerex IGBTMOD™ Modules are
designed for use in high
frequency applications; 30 kHz
for hard switching applications
and 60 to 70 kHz for soft switching
applications. Each module
consists of two IGBT Transistors
in a half-bridge configuration with
each transistor having a reverse-
connected super-fast recovery
free-wheel diode. All components
and interconnects are isolated from
the heat sinking baseplate, offering
simplified system assembly and
thermal management.
Features:
£
Low ESW(off)
£
Discrete Super-Fast Recovery
Free-Wheel Diode
£
Isolated Baseplate for Easy
Heat Sinking
Applications:
£
Power Supplies
£
Induction Heating
£
Welders
Ordering Information:
Example: Select the complete
part module number you desire
from the table below -i.e.
CM300DU-24NFH is a 1200V
(VCES), 300 Ampere Dual
IGBTMOD™ Power Module.
Type
CM
Current Rating
Amperes
300
VCES
Volts (x 50)
24
Outline Drawing and Circuit Diagram
Dimensions
A
B
C
D
E
F
G
H
J
K
L
M
N
Inches
4.25
2.44
3.66±0.01
1.89±0.01
0.98
0.24
0.59
0.7854
0.55
0.26 Dia.
M6 Metric
1.022
Millimeters
108.0
62.0
93.0±0.25
48.0±0.25
25.0
6.0
15.0
19.95
14.0
6.5 Dia.
M6
25.95
Dimensions
P
Q
R
S
T
U
V
W
X
Y
Z
AA
Inches
0.71
0.28
0.874
0.30
0.94
0.11
0.16
0.33
0.46
0.012 ~ 0
0.85
0.69
Millimeters
18.0
7.0
22.2
7.5
24.0
2.8
4.0
8.5
11.75
0.3 ~ 0
21.5
17.5
1.14+0.04/-0.02 29.0+1.0/-0.5
7/11 Rev. 1
1
Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272
CM300DU-24NFH
Dual IGBTMOD™ NFH-Series Module
3 00 Amperes/1200 Volts
Absolute Maximum Ratings,
Tj = 25 °C unless otherwise specified
Ratings
Junction Temperature
Storage Temperature
Collector-Emitter Voltage (G-E Short)
Gate-Emitter Voltage (C-E Short)
Collector Current (TC = 25°C)
Peak Collector Current
Emitter Current** (TC = 25°C)
Peak Emitter Current**
Maximum Collector Dissipation (TC = 25°C, Tj ≤ 150°C)
Maximum Collector Dissipation (TC' = 25°C, Tj' ≤ 150°C)
Mounting Torque, M6 Main Terminal
Mounting Torque, M6 Mounting
Weight
Isolation Voltage (Main Terminal to Baseplate, AC 1 min.)
Symbol
Tj
Tstg
VCES
VGES
IC
ICM
IE
IEM
PC
PC
—
—
—
VISO
CM300DU-24NF
–40 to 150
–40 to 125
1200
±20
300*
600*
300*
600*
1130
1900
40
40
400
2500
Units
°C
°C
Volts
Volts
Amperes
Amperes
Amperes
Amperes
Watts
Watts
in-lb
in-lb
Grams
Volts
Static Electrical Characteristics,
Tj = 25 °C unless otherwise specified
Characteristics
Collector-Cutoff Current
Gate Leakage Current
Gate-Emitter Threshold Voltage
Collector-Emitter Saturation Voltage
Total Gate Charge
Emitter-Collector Voltage**
Symbol
ICES
IGES
VGE(th)
VCE(sat)
QG
VEC
Test Conditions
VCE = VCES, VGE = 0V
VGE = VGES, VCE = 0V
IC = 30mA, VCE = 10V
IC = 300A, VGE = 15V, Tj = 25°C
IC = 300A, VGE = 15V, Tj = 125°C
VCC = 600V, IC = 300A, VGE = 15V
IE = 300A, VGE = 0V
Min.
—
—
4.5
—
—
—
—
Typ.
—
—
6.0
5.0
5.0
1360
—
Max.
1.0
1.0
7.5
6.5
—
—
3.5
Units
mA
µA
Volts
Volts
Volts
nC
Volts
Dynamic Electrical Characteristics,
Tj = 25 °C unless otherwise specified
Characteristics
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Inductive
Load
Switch
Time
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Symbol
Cies
Coes
Cres
td(on)
tr
td(off)
tf
trr
Qrr
VCC = 600V, IC = 300A,
VGE1 = VGE2 = 15V, RG = 1.0Ω,
Inductive Load Switching Operation,
IE = 300A
VCE = 10V, VGE = 0V
Test Conditions
Min.
—
—
—
—
—
—
—
—
—
Typ.
—
—
—
—
—
—
—
—
13
Max.
47
4.0
0.9
300
80
500
150
250
—
Units
nf
nf
nf
ns
ns
ns
ns
ns
µC
Diode Reverse Recovery Time**
Diode Reverse Recovery Charge**
* Pulse width and repetition rate should be such that device junction temperature (Tj) does not exceed Tj(max) rating.
**Represents characteristics of the anti-parallel, emitter-to-collector free-wheel diode (FWDi).
2
7/11 Rev. 1
Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272
CM300DU-24NFH
Dual IGBTMOD™ NFH-Series Module
300 Amperes/1200 Volts
Thermal and Mechanical Characteristics,
Tj = 25 °C unless otherwise specified
Characteristics
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Case
Contact Thermal Resistance
External Gate Resistance
Symbol
Rth(j-c)Q
Rth(j-c)D
Rth(j-c)'Q
Rth(j-c)'D
Rth(c-f)
RG
Test Conditions
Per IGBT 1/2 Module, TC Reference
Point per Outline Drawing
Per FWDi 1/2 Module, TC Reference
Point per Outline Drawing
Per IGBT 1/2 Module,
TC Reference Point Under Chips
Per FWDi 1/2 Module,
TC Reference Point Under Chips
Per 1/2 Module, Thermal Grease Applied
—
1.0
0.04
—
—
10
°C/W
Ω
—
—
0.1
°C/W
—
—
0.066
°C/W
—
—
0.18
°C/W
Min.
—
Typ.
—
Max.
0.11
Units
°C/W
OUTPUT CHARACTERISTICS
(TYPICAL)
TRANSFER CHARACTERISTICS
(TYPICAL)
COLLECTOR-EMITTER
SATURATION VOLTAGE CHARACTERISTICS
(TYPICAL)
600
T
j
= 25°C
COLLECTOR CURRENT, I
C
, (AMPERES)
500
400
300
200
100
0
15
13
12
500
400
300
200
100
0
COLLECTOR-EMITTER
SATURATION VOLTAGE, V
CE(sat)
, (VOLTS)
COLLECTOR CURRENT, I
C
, (AMPERES)
V
GE
= 20V
14
600
V
GE
= 10V
T
j
= 25°C
T
j
= 125°C
9
8
7
6
5
4
3
2
1
0
0
V
GE
= 15V
T
j
= 25°C
T
j
= 125°C
11
10
9
8
0
2
4
6
8
10
0
5
10
15
20
100
200
300
400
500
600
COLLECTOR-EMITTER VOLTAGE, V
CE
, (VOLTS)
GATE-EMITTER VOLTAGE, V
GE
, (VOLTS)
COLLECTOR-CURRENT, I
C
, (AMPERES)
COLLECTOR-EMITTER
SATURATION VOLTAGE CHARACTERISTICS
(TYPICAL)
FREE-WHEEL DIODE
FORWARD CHARACTERISTICS
(TYPICAL)
CAPACITANCE VS. VCE
(TYPICAL)
10
COLLECTOR-EMITTER
SATURATION VOLTAGE, VCE(sat), (VOLTS)
10
3
T
j
= 25°C
EMITTER CURRENT, I
E
, (AMPERES)
8
6
4
2
0
CAPACITANCE, C
ies
, C
oes
, C
res
, (nF)
I
C
= 600A
T
j
= 25°C
T
j
= 125°C
10
2
C
ies
10
1
C
oes
I
C
= 300A
I
C
= 120A
10
2
10
0
C
res
V
GE
= 0V
6
8
10
12
14
16
18
20
10
1
0
1
2
3
4
5
10
-1
10
-1
10
0
10
1
10
2
GATE-EMITTER VOLTAGE, V
GE
, (VOLTS)
EMITTER-COLLECTOR VOLTAGE, V
EC
, (VOLTS)
COLLECTOR-EMITTER VOLTAGE, V
CE
, (VOLTS)
7/11 Rev. 1
3
Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272
CM300DU-24NFH
Dual IGBTMOD™ NFH-Series Module
3 00 Amperes/1200 Volts
HALF-BRIDGE
SWITCHING CHARACTERISTICS
(TYPICAL)
REVERSE RECOVERY CHARACTERISTICS
(TYPICAL)
I
rr
t
rr
REVERSE RECOVERY CURRENT, I
rr
, (AMPERES)
GATE CHARGE VS. VGE
10
3
t
d(off)
t
d(on)
REVERSE RECOVERY TIME, t
rr
, (ns)
10
3
10
3
20
GATE-EMITTER VOLTAGE, V
GE
, (VOLTS)
I
C
= 300A
V
CC
= 400V
V
CC
= 600V
16
12
8
4
0
SWITCHING TIME, (ns)
10
2
t
f
10
2
V
CC
= 600V
V
GE
= ±15V
R
G
= 1.0Ω
T
j
= 25°C
Inductive Load
10
2
10
1
t
r
10
0
10
1
V
CC
= 600V
V
GE
= ±15V
R
G
= 1.0Ω
T
j
= 125°C
Inductive Load
10
2
COLLECTOR CURRENT, I
C
, (AMPERES)
10
3
10
1
10
1
10
1
10
2
EMITTER CURRENT, I
E
, (AMPERES)
10
3
0
400
800
1200
1600
2000
GATE CHARGE, Q
G
, (nC)
SWITCHING LOSS VS.
COLLECTOR CURRENT
(TYPICAL)
SWITCHING LOSS, E
SW(on)
, E
SW(off)
, (mJ/PULSE)
SWITCHING LOSS, E
SW(on)
, E
SW(off)
, (mJ/PULSE)
SWITCHING LOSS VS.
GATE RESISTANCE
(TYPICAL)
REVERSE RECOVERY SWITCHING LOSS VS.
EMITTER CURRENT
(TYPICAL)
10
2
REVERSE RECOVERY
SWITCHING LOSS, E
rr
, (mJ/PULSE)
10
1
V
CC
= 600V
V
GE
= ±15V
R
G
= 1.0Ω
T
j
= 125°C
Inductive Load
C Snubber at Bus
E
SW(on)
E
SW(off)
10
2
10
2
E
rr
10
1
V
CC
= 600V
V
GE
= ±15V
I
C
= 300A
T
j
= 125°C
Inductive Load
C Snubber at Bus
E
SW(on)
E
SW(off)
10
1
V
CC
= 600V
V
GE
= ±15V
R
G
= 1.0Ω
T
j
= 125°C
Inductive Load
C Snubber at Bus
10
0
10
1
10
2
COLLECTOR CURRENT, I
C
, (AMPERES)
10
3
10
0
10
0
10
1
GATE RESISTANCE, R
G
, (Ω)
10
2
10
0
10
1
10
2
EMITTER CURRENT, I
E
, (AMPERES)
10
3
NORMALIZED TRANSIENT THERMAL IMPEDANCE, Z
th(j-c')
Z
th
= R
th
• (NORMALIZED VALUE)
REVERSE RECOVERY SWITCHING LOSS VS.
GATE RESISTANCE
(TYPICAL)
10
2
REVERSE RECOVERY
SWITCHING LOSS, E
rr
, (mJ/PULSE)
10
0
10
-3
TRANSIENT THERMAL
IMPEDANCE CHARACTERISTICS
(IGBT & FWDi)
10
-2
10
-1
10
0
10
1
E
rr
10
-1
10
1
V
CC
= 600V
V
GE
= ±15V
I
E
= 300A
T
j
= 125°C
Inductive Load
C Snubber at Bus
10
-2
Single Pulse
T
C
= 25°C
Per Unit Base =
R
th(j-c)
=
0.11°C/W
(IGBT)
R
th(j-c)
=
0.18°C/W
(FWDi)
10
-1
10
-2
10
0
10
0
10
1
GATE RESISTANCE, R
G
, (Ω)
10
2
10
-3
10
-5
TIME, (s)
10
-4
10
-3
10
-3
4
7/11 Rev. 1
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