CONFIDENTIAL
Prepared by
Date
th
MITSUBISHI HVIGBT MODULES
S.Iura
Revision: C
I.Umezaki 5-Sep.-2011
CM2400HC-34N
HIGH POWER SWITCHING USE
INSULATED TYPE
COMPANY PROPRIETARY
NOT TO BE REPRODUCED OR DISCLOSED WITHOUT SPECIFIC
WRITTEN PERMISSION OF MITSUBISHI ELECTRIC CORPORATION
4 -Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) MODULES
CM2400HC-34N
●I
C
………………………
2400 A
●V
CES
…………………… 1700 V
●Insulated
Type
●1-element
in a Pack
●AlSiC
Baseplate
●Trench
Gate IGBT : CSTBT
TM
●Soft
Reverse Recovery Diode
APPLICATION
Traction drives, High Reliability Converters / Inverters, DC choppers
OUTLINE DRAWING & CIRCUIT DIAGRAM
Dimensions in mm
HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules
HVM-1035-C
1 of 7
CONFIDENTIAL
MITSUBISHI HVIGBT MODULES
CM2400HC-34N
4 -Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) MODULES
th
HIGH POWER SWITCHING USE
INSULATED TYPE
MAXIMUM RATINGS
Symbol
V
CES
V
GES
I
C
I
CM
I
E
I
EM
P
c
V
iso
T
j
T
op
T
stg
T
psc
Item
Collector-emitter voltage
Gate-emitter voltage
Collector current
Emitter current
Maximum power dissipation
Isolation voltage
Junction temperature
Operating temperature
Storage temperature
Maximum short circuit pulse width
V
CC
=1200V, V
CE
≤
V
CES
, V
GE
=15V, T
j
=125°C
(Note 2)
(Note 3)
Conditions
V
GE
= 0V, T
j
= 25 °C
V
CE
= 0V, T
j
= 25 °C
DC, T
c
= 75 °C
(Note 1)
Pulse
DC
(Note 1)
Pulse
T
c
= 25 °C, IGBT part
RMS, sinusoidal, f = 60Hz, t = 1min.
Ratings
1700
± 20
2400
4800
2400
4800
13100
4000
−40
~ +150
−40
~ +125
−40
~ +125
10
Unit
V
V
A
A
A
A
W
V
°C
°C
°C
µs
ELECTRICAL CHARACTERISTICS
Symbol
I
CES
V
GE(th)
I
GES
C
ies
C
oes
C
res
Q
g
V
CE(sat)
t
d(on)
t
r
E
on(10%)
t
d(off)
t
f
E
off(10%)
V
EC
t
rr
Q
rr
E
rec (10%)
Item
Collector cutoff current
Gate-emitter threshold voltage
Gate leakage current
Input capacitance
Output capacitance
Reverse transfer capacitance
Total gate charge
Collector-emitter saturation voltage
Turn-on delay time
Turn-on rise time
Turn-on switching energy
Turn-off delay time
Turn-off fall time
Turn-off switching energy
Emitter-collector voltage
Reverse recovery time
Reverse recovery charge
Reverse recovery energy
(Note 5)
(Note 5)
Conditions
V
CE
= V
CES
, V
GE
= 0V
T
j
= 25 °C
T
j
= 125 °C
Limits
Min
—
—
6.0
—
—
—
—
—
T
j
= 25 °C
T
j
= 125 °C
—
—
—
—
—
—
—
—
T
j
= 25 °C
T
j
= 125 °C
—
—
—
—
—
Typ
—
6.0
7.0
—
352
19.2
5.6
24.5
2.15
2.40
—
—
0.64
—
—
0.84
2.60
2.30
—
620
0.38
Max
8.0
16.0
8.0
0.5
—
—
—
—
2.80
—
1.50
0.70
—
3.00
0.60
—
3.30
—
1.50
—
—
Unit
mA
V
µA
nF
nF
nF
µC
V
µs
µs
J/P
µs
µs
J/P
V
µs
µC
J/P
V
CE
= 10 V, I
C
= 240 mA, T
j
= 25 °C
V
GE
= V
GES
, V
CE
= 0V, T
j
= 25°C
V
CE
= 10 V, V
GE
= 0 V, f = 100 kHz
T
j
= 25 °C
V
CC
= 850 V, I
C
= 2400 A
V
GE
= ±15V, T
j
= 25 °C
I
C
= 2400 A
V
GE
= 15 V
V
CC
= 850 V, I
C
= 2400 A
V
GE
= ±15 V, R
G(on)
= 0.7
Ω
T
j
= 125 °C, L
s
= 100 nH
Inductive load
V
CC
= 850 V, I
C
= 2400 A
V
GE
= ±15 V, R
G(off)
= 1.6
Ω
T
j
= 125 °C, L
s
= 100 nH
Inductive load
(Note 2)
(Note 4)
I
E
= 2400 A
V
GE
= 0 V
(Note 4)
(Note 2)
(Note 2)
(Note 2),(Note 5)
V
CC
= 850 V, I
E
= 2400 A
V
GE
= ±15 V, R
G(on)
= 0.7
Ω
T
j
= 125 °C, L
s
= 100 nH
Inductive load
HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules
HVM-1035-C
2 of 7
CONFIDENTIAL
MITSUBISHI HVIGBT MODULES
CM2400HC-34N
4 -Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) MODULES
th
HIGH POWER SWITCHING USE
INSULATED TYPE
THERMAL CHARACTERISTICS
Symbol
R
th(j-c)Q
R
th(j-c)R
R
th(c-f)
Item
Thermal resistance
Thermal resistance
Contact thermal resistance
Conditions
Junction to Case, IGBT part
Junction to Case, FWDi part
Case to Fin,
λ
grease
= 1W/m·K, D
(c-f)
= 100 µm
Limits
Min
—
—
—
Typ
—
—
8.0
Max
9.5
21.0
—
Unit
K/kW
K/kW
K/kW
MECHANICAL CHARACTERISTICS
Symbol
M
t
M
s
M
t
m
CTI
d
a
d
S
L
P CE
R
CC’+EE’
Note 1.
Note 2.
Note 3.
Note 4.
Note 5.
Item
Conditions
M8: Main terminals screw
Limits
Min
7.0
3.0
1.0
—
600
19.5
32.0
—
Typ
—
—
—
0.8
—
—
—
16
0.14
Max
20.0
6.0
3.0
—
—
—
—
—
—
Unit
N·m
N·m
N·m
kg
—
mm
mm
nH
mΩ
Mounting torque
M6: Mounting screw
M4: Auxiliary terminals screw
Mass
Comparative tracking index
Clearance
Creepage distance
Parasitic stray inductance
Internal lead resistance
T
c
= 25 °C
—
Pulse width and repetition rate should be such that junction temperature (T
j
) does not exceed T
opmax
rating (125°C).
The symbols represent characteristics of the anti-parallel, emitter to collector free-wheel diode (FWDi).
Junction temperature (T
j
) should not exceed T
jmax
rating (150°C).
Pulse width and repetition rate should be such as to cause negligible temperature rise.
E
on(10%)
/ E
off(10%)
/ E
rec(10%)
are the integral of
0.1V
CE
x 0.1I
C
x dt.
HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules
HVM-1035-C
3 of 7
CONFIDENTIAL
MITSUBISHI HVIGBT MODULES
CM2400HC-34N
4 -Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) MODULES
th
HIGH POWER SWITCHING USE
INSULATED TYPE
PERFORMANCE CURVES
OUTPUT CHARACTERISTICS
(TYPICAL)
5000
Tj = 125°C
TRANSFER CHARACTERISTICS
(TYPICAL)
5000
V
CE
= 20V
4000
V
GE
= 20V
V
GE
= 15V
4000
Collector Current [A]
3000
V
GE
= 12V
V
GE
= 10V
Collector Current [A]
3000
Tj = 125°C
Tj = 25°C
2000
2000
1000
V
GE
= 8V
1000
0
0
1
2
3
4
5
6
0
0
5
10
15
Collector - Emitter Voltage [V]
Gate - Emitter Voltage [V]
COLLECTOR-EMITTER SATURATION VOLTAGE
CHARACTERISTICS (TYPICAL)
5000
V
GE
= 15V
FREE-WHEEL DIODE FORWARD
CHARACTERISTICS (TYPICAL)
5000
4000
4000
Tj = 125°C
Collector Current [A]
Tj = 125°C
Emitter Current [A]
Tj = 25°C
Tj = 25°C
3000
3000
2000
2000
1000
1000
0
0
1
2
3
4
0
0
1
2
3
4
Collector-Emitter Saturation Voltage [V]
Emitter-Collector Voltage [V]
HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules
HVM-1035-C
4 of 7
CONFIDENTIAL
MITSUBISHI HVIGBT MODULES
CM2400HC-34N
4 -Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) MODULES
th
HIGH POWER SWITCHING USE
INSULATED TYPE
PERFORMANCE CURVES
CAPACITANCE CHARACTERISTICS
(TYPICAL)
10000
GATE CHARGE CHARACTERISTICS
(TYPICAL)
20
15
V
CE
= 850V, I
C
= 2400A
Tj = 25°C
Gate-Emitter Voltage [V]
1000
Cies
10
5
0
-5
-10
Capacitance [nF]
100
Coes
10
V
GE
= 0V, Tj = 25°C
f = 100kHz
Cres
1
0.1
1
10
100
-15
0
10
20
30
40
Collector-Emitter Voltage [V]
Gate Charge [µC]
HALF-BRIDGE SWITCHING ENERGY
CHARACTERISTICS (TYPICAL)
3
V
CC
= 850V, V
GE
= ±15V
R
G(on)
= 0.7
Ω,
R
G(off)
= 1.6
Ω
Tj = 125°C, Inductive load
Eoff
HALF-BRIDGE SWITCHING ENERGY
CHARACTERISTICS (TYPICAL)
5
V
CC
= 850V, I
C
= 2400A
V
GE
= ±15V, Tj = 125°C
Inductive load
2.5
4
Switching Energies [J/P]
Switching Energies [J/P]
2
Eon
3
Eoff
1.5
Eon
2
1
Erec
0.5
1
Erec
0
0
1000
2000
3000
4000
5000
0
0
2
4
6
8
10
12
Collector Current [A]
Gate Resistance [Ω]
HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules
HVM-1035-C
5 of 7
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