< HVIGBT MODULES >
CM1200HC-90R
HIGH POWER SWITCHING USE
INSULATED TYPE
4th-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules
CM1200HC-90R
I
C ································································
1200A
V
CES ··························································
4500V
1-element in a pack
Insulated type
LPT-IGBT / Soft Recovery Diode
AlSiC baseplate
APPLICATION
Traction drives, High Reliability Converters / Inverters, DC choppers
OUTLINE DRAWING & CIRCUIT DIAGRAM
Dimensions in mm
November 2012
HVM-1057-E
1
< HVIGBT MODULES >
CM1200HC-90R
HIGH POWER SWITCHING USE
INSULATED TYPE
MAXIMUM RATINGS
Symbol
V
CES
V
GES
I
C
I
CRM
I
E
I
ERM
P
tot
V
iso
V
e
T
j
T
jop
T
stg
t
psc
Item
Collector-emitter voltage
Gate-emitter voltage
Collector current
Emitter current
(Note 2)
4th-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules
Maximum power dissipation
(Note 3)
Isolation voltage
Partial discharge extinction voltage
Junction temperature
Operating junction temperature
Storage temperature
Short circuit pulse width
Conditions
V
GE
= 0V, T
j
=
−40…+125°C
V
GE
= 0V, T
j
=
−50°C
V
CE
= 0V, T
j
= 25°C
DC, T
c
= 85°C
Pulse
(Note 1)
DC
Pulse
(Note 1)
T
c
= 25°C, IGBT part
RMS, sinusoidal, f = 60Hz, t = 1 min.
RMS, sinusoidal, f = 60Hz, Q
PD
≤
10 pC
V
CC
= 3200V, V
CE
≤
V
CES
, V
GE
=15V, T
j
=125°C
Ratings
4500
4400
±20
1200
2400
1200
2400
12500
6000
3500
−50
~ +150
−50
~ +125
−55
~ +125
10
Unit
V
V
A
A
A
A
W
V
V
°C
°C
°C
s
ELECTRICAL CHARACTERISTICS
Symbol
I
CES
V
GE(th)
I
GES
C
ies
C
oes
C
res
Q
G
V
CEsat
t
d(on)
t
r
E
on(10%)
E
on
t
d(off)
t
f
E
off(10%)
E
off
Item
Collector cutoff current
Gate-emitter threshold voltage
Gate leakage current
Input capacitance
Output capacitance
Reverse transfer capacitance
Total gate charge
Collector-emitter saturation voltage
Turn-on delay time
Turn-on rise time
Turn-on switching energy
Turn-on switching energy
Turn-off delay time
Turn-off fall time
Turn-off switching energy
Turn-off switching energy
(Note 5)
(Note 5)
Conditions
V
CE
= V
CES
, V
GE
= 0V
V
CE
= 10 V, I
C
= 120 mA, T
j
= 25°C
V
GE
= V
GES
, V
CE
= 0V, T
j
= 25°C
V
CE
= 10 V, V
GE
= 0 V, f = 100 kHz
T
j
= 25°C
V
CC
= 2800V, I
C
= 1200A, V
GE
=
±15V
I
C
= 1200 A
(Note 4)
V
GE
= 15 V
V
CC
= 2800 V
I
C
= 1200 A
V
GE
= ±15 V
R
G(on)
= 2.7
Ω
L
s
= 150 nH
Inductive load
T
j
= 25°C
T
j
= 125°C
T
j
= 25°C
T
j
= 125°C
T
j
= 25°C
T
j
= 125°C
T
j
= 25°C
T
j
= 125°C
T
j
= 25°C
T
j
= 125°C
T
j
= 25°C
T
j
= 125°C
T
j
= 25°C
T
j
= 125°C
T
j
= 25°C
T
j
= 125°C
T
j
= 25°C
T
j
= 125°C
T
j
= 25°C
T
j
= 125°C
(Note 6)
(Note 6)
V
CC
= 2800 V
I
C
= 1200 A
V
GE
= ±15 V
R
G(off)
= 10
Ω
L
s
= 150 nH
Inductive load
Min
―
―
5.8
−0.5
―
―
―
―
―
―
―
―
―
―
―
―
―
―
―
―
―
―
―
―
―
―
Limits
Typ
―
16.0
6.3
―
175.0
11.0
5.0
13.5
3.50
4.40
1.00
0.95
0.28
0.30
4.30
5.10
4.60
5.50
3.60
3.80
0.35
0.45
2.90
3.85
3.20
4.30
Max
16.0
―
6.8
0.5
―
―
―
―
―
5.10
―
1.50
―
0.50
―
―
―
―
―
5.00
―
1.00
―
―
―
―
Unit
mA
V
µA
nF
nF
nF
µC
V
µs
µs
J
J/P
µs
µs
J
J
December 2012
HVM-1057-E
2
< HVIGBT MODULES >
CM1200HC-90R
HIGH POWER SWITCHING USE
INSULATED TYPE
4th-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules
ELECTRICAL CHARACTERISTICS (continuation)
Symbol
V
EC
t
rr
I
rr
Q
rr
E
rec(10%)
E
rec
Item
Emitter-collector voltage
Reverse recovery time
Reverse recovery current
Reverse recovery charge
Reverse recovery energy
Reverse recovery energy
(Note 2)
Conditions
I
E
= 1200 A
(Note 4)
V
GE
= 0 V
T
j
= 25°C
T
j
= 125°C
T
j
= 25°C
T
j
= 125°C
T
j
= 25°C
T
j
= 125°C
T
j
= 25°C
T
j
= 125°C
T
j
= 25°C
T
j
= 125°C
T
j
= 25°C
T
j
= 125°C
(Note 2)
(Note 2)
(Note 2)
(Note 2)
(Note 5)
(Note 2)
(Note 6)
V
CC
= 2800 V
I
C
= 1200 A
V
GE
= ±15 V
R
G(on)
= 2.7
Ω
L
s
= 150 nH
Inductive load
Min
—
—
—
—
—
—
—
—
—
—
—
—
Limits
Typ
2.50
2.80
0.70
0.90
1100
1200
1000
1500
1.30
2.10
1.55
2.40
Max
—
3.40
—
—
—
—
—
—
—
—
—
—
Unit
V
µs
A
µC
J
J
THERMAL CHARACTERISTICS
Symbol
R
th(j-c)Q
R
th(j-c)D
R
th(c-s)
Item
Thermal resistance
Contact thermal resistance
Conditions
Junction to Case, IGBT part
Junction to Case, FWDi part
Case to heat sink,
grease
= 1W/m
·
k, D
(c-s)
= 100m
Min
―
―
―
Limits
Typ
―
―
6.0
Max
10.0
19.0
―
Unit
K/kW
K/kW
K/kW
MECHANICAL CHARACTERISTICS
Symbol
M
t
M
s
M
t
m
CTI
d
a
d
s
L
P CE
R
CC’+EE’
r
g
Item
Mounting torque
Mass
Comparative tracking index
Clearance
Creepage distance
Parasitic stray inductance
Internal lead resistance
Internal gate resistance
Conditions
M8 : Main terminals screw
M6 : Mounting screw
M4 : Auxiliary terminals screw
Min
7.0
3.0
1.0
―
600
19.5
32.0
―
―
―
Limits
Typ
―
―
―
1.2
―
―
―
11.0
0.12
1.7
Max
22.0
6.0
3.0
―
―
―
―
―
―
―
Unit
N·m
N·m
N·m
kg
―
mm
mm
nH
mΩ
Ω
T
C
= 25°C
T
C
= 25°C
Note1. Pulse width and repetition rate should be such that junction temperature (T
j
) does not exceed T
opmax
rating.
2. The symbols represent characteristics of the anti-parallel, emitter to collector free-wheel diode (FWD
i
).
3. Junction temperature (T
j
) should not exceed T
jmax
rating (150°C).
4. Pulse width and repetition rate should be such as to cause negligible temperature rise.
5. E
on(10%)
/ E
off(10%)
/ E
rec(10%)
are the integral of
0.1V
CE
x 0.1I
C
x dt.
6. Definition of all items is according to IEC 60747, unless otherwise specified.
December 2012
HVM-1057-E
3
< HVIGBT MODULES >
CM1200HC-90R
HIGH POWER SWITCHING USE
INSULATED TYPE
4th-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules
PERFORMANCE CURVES
OUTPUT CHARACTERISTICS
(TYPICAL)
2500
Tj = 25 °C
V
GE
= 1 3V
TRANSFER CHARACTERISTICS
(TYPICAL)
2500
V
CE
= V
GE
2000
V
GE
= 16V
2000
V
GE
= 1 5V
V
GE
= 11V
Coll ector Current [A]
1500
Coll ector Current [A]
1500
1000
V
GE
= 10V
1000
Tj = 1 25°C
500
500
Tj = 2 5°C
0
0
2
4
6
8
0
0
4
8
12
16
Collector - Emitter Voltage [V]
Gate - Emitter Voltage [V]
COLLECTOR-EMITTER SATURATION VOLTAGE
CHARACTERISTICS (TYPICAL)
2500
V
GE
= 15 V
FREE-WHEEL DIODE FORWARD
CHARACTERISTICS (TYPICAL)
2500
2000
2000
Tj = 25 °C
Tj = 25 °C
Coll ector Current [A]
1500
Emi tter Current [A]
Tj = 1 25°C
1500
Tj = 1 25 °C
1000
1000
500
500
0
0
2
4
6
8
0
0
1
2
3
4
5
Collector-Emitter Saturation Voltage [V]
Emitter-Coll ector Voltage [V]
December 2012
HVM-1057-E
4
< HVIGBT MODULES >
CM1200HC-90R
HIGH POWER SWITCHING USE
INSULATED TYPE
4th-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules
PERFORMANCE CURVES
CAPACITANCE CHARACTERISTICS
(TYPICAL)
1000
GATE CHARGE CHARACTERISTICS
(TYPICAL)
20
15
V
CE
= 28 00V, I
C
= 1 200 A
Tj = 2 5° C
Cies
Gate-Emitter Voltage [V]
100
10
5
0
-5
-10
-15
Capa citance [nF]
100
10
Co es
Cre s
V
GE
= 0V, Tj = 2 5° C
f = 10 0kHz
1
0.1
1
10
0
5
10
15
20
Coll ector-Emitter Voltage [V]
Gate Charge [µC]
HALF-BRIDGE SWITCHING ENERGY
CHARACTERISTICS (TYPICAL)
16
14
V
CC
= 280 0V, V
GE
= ±1 5V
R
G( on)
= 2.7
Ω,
R
G(off )
= 10Ω
L
S
= 15 0nH, Tj = 125 °C
Indu ctive lo ad
Eon
HALF-BRIDGE SWITCHING ENERGY
CHARACTERISTICS (TYPICAL)
12
V
CC
= 28 00V, I
C
= 1 200 A
V
GE
= ±1 5V, L
S
= 1 50n H
Tj = 1 25°C, Ind uctive load
Switching Energies [J/pulse]
Switching Energies [J/pulse]
12
10
Eo ff
10
8
8
6
4
2
0
0
500
1000
1500
2000
2500
Erec
6
Eon
4
2
Ere c
0
0
1
2
3
4
5
Collector Curre nt [A]
Gate resistor [Ohm]
December 2012
HVM-1057-E
5
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