CM1200DC-34N
Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272
www.pwrx.com
Dual IGBTMOD™
HVIGBT Module
1200 Amperes/1700 Volts
A
D
D
U
K (4 TYP)
4
2
F
B C
E
Q
3
E1
G1
C1
1
Y
E2
Z
AA
G2
C2
M (3 TYP)
V
W
H
G
N
T
S
J
AB
L
(6 PLACES)
4(E1)
R
P
G1
E1
X
2(C2)
C2
G2
Description:
Powerex IGBTMOD™ Modules
are designed for use in switching
applications. Each module consists
of two IGBT Transistors in a half-
bridge configuration with each
transistor having a reverse-
connected super-fast recovery
free-wheel diode. All components
and interconnects are isolated
from the heat sinking baseplate,
offering simplified system assembly
and thermal management.
Features:
Q
C1
3(C1)
1(E2)
E2
Outline Drawing and Circuit Diagram
Dimensions
A
B
C
D
E
F
G
H
J
K
L
M
N
Inches
5.12±0.02
5.51±0.02
4.88±0.01
2.24±0.01
1.18±0.008
0.79±0.004
2.09±0.008
1.57±0.008
1.73±0.008
M8 Metric
0.28 Dia.
M4 Metric
2.17±0.01
Millimeters
130.0±0.5
140.0±0.5
124.0±0.25
57.0±0.25
30.0±0.2
20.0±0.1
53.0±0.2
40.0±0.2
44.0±0.2
M8
7.0 Dia.
M4
55.2±0.3
Dimensions
P
Q
R
S
T
U
V
W
X
Y
Z
AA
AB
Inches
0.2±0.008
0.65 Min.
0.30 Min.
0.47±0.008
1.16±0.02
0.45±0.008
0.55±0.008
1.38±0.008
0.63±0.008
0.71±0.008
2.24±0.008
Millimeters
5.0±0.2
16.5 Min.
7.7 Min.
11.85±0.2
29.5±0.5
11.5±0.2
14.0±0.2
35.0±0.2
16.0±0.2
18.0±0.2
57.0±0.2
£
Low Drive Power
£
Low V
CE(sat)
£
Super-Fast Recovery
Free-Wheel Diode
Heat Sinking
£
Isolated Baseplate for Easy
Applications:
1.50+0.04/-0.0 38.0+1.0/-0.0
£
Traction
£
Medium Voltage Drives
£
High Voltage Power Supplies
Ordering Information:
Example: Select the complete
part module number you desire
from the table below -i.e.
CM1200DC-34N is a 1700V
(V
CES
), 1200 Ampere Dual
IGBTMOD™ Power Module.
Type
CM
Current Rating
Amperes
1200
V
CES
Volts (x 50)
34
1.10+0.04/-0.0 28.0+1.0/-0.0
12/12 Rev. 2
1
Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272 www.pwrx.com
CM1200DC-34N
Dual IGBTMOD™ HVIGBT Module
1200 Amperes/1700 Volts
Absolute Maximum Ratings,
T
j
= 25 °C unless otherwise specified
Ratings
Junction Temperature
Storage Temperature
Operating Temperature
Collector-Emitter Voltage (V
GE
= 0V)
Gate-Emitter Voltage (V
CE
= 0V)
Collector Current (DC, T
c
= 75°C)
Peak Collector Current (Pulse)
Emitter Current (T
c
= 25°C)*
2
Emitter Surge Current (Pulse)*
2
Maximum Power Dissipation (T
c
= 25°C, IGBT Part)*
3
Max. Mounting Torque M8 Main Terminal Screws
Max. Mounting Torque M6 Mounting Screws
Max. Mounting Torque M4 Auxiliary Terminal Screws
Module Weight (Typical)
Isolation Voltage (RMS, Sinusoidal, f = 60Hz, t = 1 min.)
Maximum Short Circuit Pulse Width
(V
CC
= 1200V, V
CES
≤ 1700V, V
GE
= 15V, T
j
= 125°C)
Symbol
T
j
T
stg
T
opr
V
CES
V
GES
I
C
I
CM
*
1
I
E
I
EM
*
1
P
C
–
–
–
–
V
iso
t
psc
CM1200DC-34N
-40 to 150
-40 to 125
-40 to 125
1700
±20
1200
2400
1200
2400
6500
177
53
27
0.8
4000
10
Units
°C
°C
°C
Volts
Volts
Amperes
Amperes
Amperes
Amperes
Watts
in-lb
in-lb
in-lb
kg
Volts
µs
*1 Pulse width and repetition rate should be such that device junction temperature (T
j
) does not exceed T
opr(max)
rating (125°C).
*2 Represents characteristics of the anti-parallel, emitter-to-collector free-wheel diode (FWDi).
*3 Junction temperature (T
j
) should not exceed T
j(max)
rating (150°C).
2
12/12 Rev. 2
Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272 www.pwrx.com
CM1200DC-34N
Dual IGBTMOD™ HVIGBT Module
1200 Amperes/1700 Volts
Static Electrical Characteristics,
T
j
= 25 °C unless otherwise specified
Characteristics
Collector-Cutoff Current
Gate-Emitter Threshold Voltage
Gate Leakage Current
Collector-Emitter Saturation Voltage
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Emitter-Collector Voltage
Turn-On Delay Time
Turn-On Rise Time
Turn-On Switching Energy
Turn-Off Delay Time
Turn-Off Fall Time
Turn-Off Switching Energy
Reverse Recovery Time
Reverse Recovery Current
Reverse Recovery Charge
Reverse Recovery Energy
Symbol
I
CES
V
GE(th)
I
GES
V
CE(sat)
C
ies
C
oes
C
res
Q
G
V
EC
*
2
t
d(on)
t
r
E
on
t
d(off)
t
f
E
off
t
rr
*
2
I
rr
*
2
Q
rr
*
2
E
rec
*
2
V
CC
= 850V, I
C
= 1200A, V
GE
= 15V
I
E
= 1200A, V
GE
= 0V, T
j
= 25°C*
4
I
E
= 1200A, V
GE
= 0V, T
j
= 125°C*
4
V
CC
= 850V, I
C
= 1200A,
V
GE
=
±15V,
R
G(on)
= 1.3Ω,
T
j
= 125°C, L
s
= 150nH, Inductive Load
V
CC
= 850V, I
C
= 1200A,
V
GE
=
±15V,
R
G(off)
= 3.3Ω,
T
j
= 125°C, L
s
= 150nH, Inductive Load
V
CC
= 850V, I
C
= 1200A,
V
GE
=
±15V,
R
G(on)
= 1.3Ω,
T
j
= 125°C, L
s
= 150nH,
Inductive Load
V
CE
= 10V, f = 100kHz, V
GE
= 0V
Test Conditions
V
CE
= V
CES
, V
GE
= 0V
I
C
= 120mA, V
CE
= 10V
V
GE
= V
GES
, V
CE
= 0V
I
C
= 1200A, V
GE
= 15V, T
j
= 25°C*
4
I
C
= 1200A, V
GE
= 15V, T
j
= 125°C*
4
Min.
–
6.0
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
Typ.
–
7.0
–
2.15
2.40
176
9.6
2.8
6.8
2.60
2.30
1.00
0.40
380
1.20
0.30
360
1.00
560
300
220
Max.
4
8.0
0.5
2.80
–
–
–
–
–
3.30
–
–
–
–
–
–
–
–
–
–
–
Units
mA
Volts
µA
Volts
Volts
nF
nF
nF
µC
Volts
Volts
µs
µs
mJ/P
µs
µs
mJ/P
µs
Amperes
µC
mJ/P
*2 Represents characteristics of the anti-parallel, emitter-to-collector free-wheel diode (FWDi).
*4 Pulse width and repetition rate should be such as to cause negligible temperature rise.
12/12 Rev. 2
3
Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272 www.pwrx.com
CM1200DC-34N
Dual IGBTMOD™ HVIGBT Module
1200 Amperes/1700 Volts
Thermal Characteristics,
T
j
= 25 °C unless otherwise specified
Characteristics
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Case
Contact Thermal Resistance, Case to Fin
Symbol
R
th(j-c)
Q
R
th(j-c)
D
R
th(c-f)
Test Conditions
IGBT Part, 1/2 Module
FWDi Part, 1/2 Module
λ
grease
= 1W/m•K, 1/2 Module
Min.
–
–
–
Typ.
–
–
0.016
Max.
0.019
0.042
–
Units
°C/W
°C/W
°C/W
Mechanical Characteristics,
T
j
= 25 °C unless otherwise specified
Characteristics
Comparative Tracking Index
Clearance Distance in Air
Creepage Distance Along Surface
Internal Inductance
Internal Lead Resistance
Symbol
CTI
d
a
d
s
L
C-E(int)
R
C-E(int)
Test Conditions
–
–
–
IGBT Part
T
C
= 25°C
Min.
600
9.5
15.0
–
–
Typ.
–
–
–
30
0.28
Max.
–
–
–
–
–
Units
–
mm
mm
nH
mΩ
4
12/12 Rev. 2
Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272 www.pwrx.com
CM1200DC-34N
Dual IGBTMOD™ HVIGBT Module
1200 Amperes/1700 Volts
OUTPUT CHARACTERISTICS
(TYPICAL)
T
j
= 125°C
15V
12V
COLLECTOR-EMITTER VOLTAGE, V
CES
, (VOLTS)
FREE-WHEEL DIODE FORWARD
CHARACTERISTICS (TYPICAL)
TRANSFER CHARACTERISTICS
(TYPICAL)
2400
COLLECTOR CURRENT, I
C
, (AMPERES)
5
COLLECTOR CURRENT, I
C
, (AMPERES)
2400
T
j
= 25°C
T
j
= 125°C
2000
V
GE
= 20V
4
3
2
1
0
2000
1600
1200
800
400
0
V
CE
= 20V
T
j
= 25°C
T
j
= 125°C
1600
1200
800
400
0
10V
8V
0
1
2
3
4
5
6
0
400
800 1200 1600 2000 2400
0
2
4
6
8
10
12
COLLECTOR-EMITTER VOLTAGE, V
CE(sat)
, (VOLTS)
EMITTER CURRENT, I
E
, (AMPERES)
GATE-EMITTER VOLTAGE, V
GE
, (VOLTS)
COLLECTOR-EMITTER SATURATION
VOLTAGE CHARACTERISTICS
(TYPICAL)
COLLECTOR-EMITTER VOLTAGE, V
CES
, (VOLTS)
CAPACITANCE VS.
COLLECTOR-EMITTER VOLTAGE
(TYPICAL)
HALF-BRIDGE
SWITCHING CHARACTERISTICS
(TYPICAL)
5
4
3
2
1
0
CAPACITANCE, C
ies
, C
oes
, C
res
, (pF)
10
3
V
GE
= 15V
T
j
= 25°C
T
j
= 125°C
C
ies
SWITCHING TIME, (µs)
10
1
10
2
10
0
t
d(off)
t
d(on)
t
r
t
f
V
CC
= 850V
V
GE
= ±15V
R
G(on)
= 1.3Ω
R
G(off)
= 3.3Ω
T
j
= 125°C
Inductive Load
10
1
V
GE
= 0V
f = 100kHz
T
j
= 25°C
C
oes
C
res
10
-1
0
400
800 1200 1600 2000 2400
10
0
10
-1
10
0
10
1
10
2
10
-2
10
2
10
3
COLLECTOR CURRENT, I
C
, (AMPERES)
10
4
COLLECTOR CURRENT, I
C
, (AMPERES)
COLLECTOR-EMITTER VOLTAGE, V
CE
, (VOLTS)
FREE-WHEEL DIODE REVERSE RECOVERY
CHARGE CHARACTERISTICS (TYPICAL)
REVERSE BIAS SAFE OPERATING AREA
(RBSOA)
GATE CHARGE, V
GE
500
REVERSE RECOVERY CHARGE, Q
rr
, ( C)
3000
2500
2000
1500
1000
500
0
GATE-EMITTER VOLTAGE, V
GE
, (VOLTS)
COLLECTOR CURRENT, I
C
, (AMPERES)
20
16
12
8
4
0
400
300
200
100
0
V
CC
= 850V
V
GE
= ±15V
R
G(on)
= 1.3Ω
T
j
= 125°C
I
C
= 1200A
V
CC
= 850V
T
j
= 25°C
V
CC
≤ 1200V
V
GE
= ±15V
R
G(off)
≥ 3.3Ω
T
j
= 125°C
Module
Chip
0
400
800 1200 1600 2000 2400
0
500
1000
1500
2000
0
2
4
6
8
10
EMITTER CURRENT, I
E
, (AMPERES)
COLLECTOR-EMITTER VOLTAGE, V
CE
, (VOLTS)
GATE CHARGE, Q
G
, (
C)
12/12 Rev. 2
5
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