2N3960
Qualified Levels:
JAN, JANTX, and
JANTXV
Compliant
NPN Silicon Switching Transistor
Qualified per MIL-PRF-19500/399
DESCRIPTION
This 2N3960 epitaxial planar transistor is military qualified up to the JANTXV level for high-
reliability applications. It features a thru-hole TO-18 package. This device is also available in
a low profile ceramic UB package.
Important:
For the latest information, visit our website
http://www.microsemi.com.
FEATURES
•
•
•
Surface mount equivalent of JEDEC registered 2N3960 number
JAN, JANTX, and JANTXV qualifications are available per MIL-PRF-19500/366.
(See
part nomenclature
for all available options.)
RoHS compliant versions available
TO-18
(TO-206AA)
Package
Also available in:
UB package
(surface mount)
2N3960UB
APPLICATIONS / BENEFITS
•
•
•
•
General purpose transistors for medium power applications requiring high frequency switching
Leaded, hermetically sealed TO-18 package
Lightweight
Military and other high-reliability applications
MAXIMUM RATINGS
@ T
C
= +25 ºC unless otherwise noted
Parameters / Test Conditions
Junction & Storage Temperature Range
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Total Power Dissipation
@ T
A
= +25 °C
(1)
Symbol
T
J
, T
stg
V
CEO
V
CBO
V
EBO
P
T
Value
-65 to +200
12
20
4.5
400
Unit
°C
V
V
V
mW
MSC – Lawrence
6 Lake Street,
Lawrence, MA 01841
Tel: 1-800-446-1158 or
(978) 620-2600
Fax: (978) 689-0803
MSC – Ireland
Gort Road Business Park,
Ennis, Co. Clare, Ireland
Tel: +353 (0) 65 6840044
Fax: +353 (0) 65 6822298
Website:
www.microsemi.com
Notes:
1. Derate linearly 2.3 mW/°C above T
A
= +25 °C.
T4-LDS-0161, Rev. 2 (10/15/13)
©2013 Microsemi Corporation
Page 1 of 4
2N3960
MECHANICAL and PACKAGING
•
•
•
•
•
CASE: Hermetically sealed, nickel plated kovar base, nickel cap
TERMINALS: Kovar with Gold plate over nickel for JANS, plus solder dip for JAN, JANTX, and JANTXV
MARKING: Part number, date code, manufacturer’s ID
WEIGHT: Approximately 0.3 grams
See
Package Dimensions
on last page.
PART NOMENCLATURE
JAN
Reliability Level
JAN = JAN Level
JANTX = JANTX Level
JANTXV = JANTXV Level
Blank = Commercial
2N3960
JEDEC type number
(see
Electrical Characteristics
table)
Symbol
I
B
I
C
V
CB
V
CBO
V
CE
V
CEO
V
CC
V
EB
V
EBO
SYMBOLS & DEFINITIONS
Definition
Base current: The value of the dc current into the base terminal.
Collector current: The value of the dc current into the collector terminal.
Collector-base voltage: The dc voltage between the collector and the base.
Collector-base voltage, base open: The voltage between the collector and base terminals when the emitter terminal is
open-circuited.
Collector-emitter voltage: The dc voltage between the collector and the emitter.
Collector-emitter voltage, base open: The voltage between the collector and the emitter terminals when the base
terminal is open-circuited.
Collector-supply voltage: The supply voltage applied to a circuit connected to the collector.
Emitter-base voltage: The dc voltage between the emitter and the base
Emitter-base voltage, collector open: The voltage between the emitter and base terminals with the collector terminal
open-circuited.
T4-LDS-0161, Rev. 2 (10/15/13)
©2013 Microsemi Corporation
Page 2 of 4
2N3960
ELECTRICAL CHARACTERISTICS
@ T
A
= +25 °C, unless otherwise noted
Parameters / Test Conditions
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage
I
C
= 10
µA,
pulsed
Collector-Base Cutoff Current
V
CB
= 20 V
Emitter-Base Cutoff Current
V
EB
= 4.5 V
Collector-Emitter Cutoff Current
V
CE
= 10 V, V
EB
= 0.4 V
V
CE
= 10 V, V
EB
= 2.0 V
ON CHARACTERISTICS
(1)
Forward-Current Transfer Ratio
I
C
= 1.0 mA, V
CE
= 1 V
I
C
= 10 mA, V
CE
= 1 V
I
C
= 30 mA, V
CE
= 1 V
Collector-Emitter Saturation Voltage
I
C
= 1.0 mA, I
B
= 0.1 mA
I
C
= 30 mA, I
B
= 3.0 mA
Base-Emitter Saturation Voltage
I
C
= 1.0 mA, V
CE
= 1.0 V
I
C
= 30 mA, V
CE
= 1.0 V
DYNAMIC CHARACTERISTICS
Forward Current Transfer Ratio, Magnitude
I
C
= 5.0 mA, V
CE
= 4 V, f = 100 MHz
I
C
= 10 mA, V
CE
= 4 V, f = 100 MHz
I
C
= 30 mA, V
CE
= 4 V, f = 100 MHz
Output Capacitance
V
CB
= 4 V, I
E
= 0, 100 kHz < f < 1 MHz
Input Capacitance
V
EB
= 0.5 V, I
C
= 0, 100 kHz < f < 1.0 MHz
(1) Pulse Test: pulse width = 300
µs,
duty cycle < 2.0%
Symbol
Min.
Max.
Unit
V
(BR)CEO
I
CBO
I
EBO
I
CEX1
I
CEX2
12
10
10
1
5
V
µA
µA
µA
nA
h
FE
40
60
30
300
V
CE(sat)
0.2
0.3
0.8
1.0
V
V
BE
V
|h
fe
|
13
14
12
2.5
2.5
pF
pF
C
obo
C
ibo
T4-LDS-0161, Rev. 2 (10/15/13)
©2013 Microsemi Corporation
Page 3 of 4
2N3960
PACKAGE DIMENSIONS
Symbol
CD
CH
HD
LC
LD
LL
LU
L1
L2
P
Q
TL
TW
r
α
Dimensions
Inch
Millimeters
Min
Max
Min
Max
0.178 0.195
4.52
4.95
0.170 0.210
4.32
5.33
0.209 0.230
5.31
5.84
0.100 TP
2.54 TP
0.016 0.021
0.41
0.53
0.500 0.750 12.70 19.05
0.016 0.019
0.41
0.48
-
0.050
-
1.27
0.250
-
6.35
-
0.100
-
2.54
-
-
0.040
-
1.02
0.028 0.048
0.71
1.22
0.036 0.046
0.91
1.17
-
0.010
-
0.25
45° TP
45° TP
Note
6
7,11
7
12
7
7
5
4
3
9
10
6
NOTES:
1.
2.
3.
4.
5.
6.
Dimensions are in inches.
Millimeters are given for information only.
Symbol TL is measured from HD maximum.
Details of outline in this zone are optional.
Symbol CD shall not vary more than 0.010 (0.25 mm) in zone P. This zone is controlled for automatic handling.
Leads at gauge plane 0.054 inch (1.37 mm) +.001 inch (0.03 mm) -0.000 inch (0.00 mm) below seating
plane shall be within 0.007 inch (0.18 mm) radius of true position (TP) relative to tab. Device may be
measured by direct methods or by gauge.
7. Symbol LD applies between L1 and L2. Dimension LD applies between L2 and LL minimum.
8. Lead number three is electrically connected to case.
9. Beyond r maximum, TW shall be held for a minimum length of 0.011 inch (0.28 mm).
10. Symbol r applied to both inside corners of tab.
11. Measured in a zone beyond 0.250 (6.35 mm) from the seating plane.
12. Measured in the zone between 0.050 (1.27 mm) and 0.250 (6.35 mm) from the seating plane.
13. In accordance with ASME Y14.5M, diameters are equivalent to φx symbology.
14. Lead 1 is emitter, lead 2 is base, and case is collector.
T4-LDS-0161, Rev. 2 (10/15/13)
©2013 Microsemi Corporation
Page 4 of 4
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