Small Signal Bipolar Transistor, 0.05A I(C), 160V V(BR)CEO, 1-Element, NPN, Silicon, TO-236AB
参数名称 | 属性值 |
厂商名称 | Motorola ( NXP ) |
包装说明 | SMALL OUTLINE, R-PDSO-G3 |
Reach Compliance Code | unknown |
ECCN代码 | EAR99 |
最大集电极电流 (IC) | 0.05 A |
集电极-发射极最大电压 | 160 V |
配置 | SINGLE |
最小直流电流增益 (hFE) | 150 |
JEDEC-95代码 | TO-236AB |
JESD-30 代码 | R-PDSO-G3 |
元件数量 | 1 |
端子数量 | 3 |
最高工作温度 | 150 °C |
封装主体材料 | PLASTIC/EPOXY |
封装形状 | RECTANGULAR |
封装形式 | SMALL OUTLINE |
极性/信道类型 | NPN |
功耗环境最大值 | 0.225 W |
认证状态 | Not Qualified |
表面贴装 | YES |
端子形式 | GULL WING |
端子位置 | DUAL |
晶体管元件材料 | SILICON |
标称过渡频率 (fT) | 150 MHz |
VCEsat-Max | 0.5 V |
MMBC1654N7LT3 | MMBC1654N7LT1 | MMBC1654N5LT1 | MMBC1654N6LT1 | MMBC1654N5LT3 | MMBC1654N6LT3 | |
---|---|---|---|---|---|---|
描述 | Small Signal Bipolar Transistor, 0.05A I(C), 160V V(BR)CEO, 1-Element, NPN, Silicon, TO-236AB | 50mA, 160V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-236AB | 50mA, 160V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-236AB | Small Signal Bipolar Transistor, 0.05A I(C), 160V V(BR)CEO, 1-Element, NPN, Silicon, TO-236AB | 50mA, 160V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-236AB | Small Signal Bipolar Transistor, 0.05A I(C), 160V V(BR)CEO, 1-Element, NPN, Silicon, TO-236AB |
厂商名称 | Motorola ( NXP ) | Motorola ( NXP ) | Motorola ( NXP ) | Motorola ( NXP ) | Motorola ( NXP ) | Motorola ( NXP ) |
包装说明 | SMALL OUTLINE, R-PDSO-G3 | SMALL OUTLINE, R-PDSO-G3 | SMALL OUTLINE, R-PDSO-G3 | SMALL OUTLINE, R-PDSO-G3 | SMALL OUTLINE, R-PDSO-G3 | SMALL OUTLINE, R-PDSO-G3 |
Reach Compliance Code | unknown | unknown | unknown | unknown | unknow | unknow |
ECCN代码 | EAR99 | EAR99 | EAR99 | EAR99 | EAR99 | EAR99 |
最大集电极电流 (IC) | 0.05 A | 0.05 A | 0.05 A | 0.05 A | 0.05 A | 0.05 A |
集电极-发射极最大电压 | 160 V | 160 V | 160 V | 160 V | 160 V | 160 V |
配置 | SINGLE | SINGLE | SINGLE | SINGLE | SINGLE | SINGLE |
最小直流电流增益 (hFE) | 150 | 150 | 50 | 100 | 50 | 100 |
JEDEC-95代码 | TO-236AB | TO-236AB | TO-236AB | TO-236AB | TO-236AB | TO-236AB |
JESD-30 代码 | R-PDSO-G3 | R-PDSO-G3 | R-PDSO-G3 | R-PDSO-G3 | R-PDSO-G3 | R-PDSO-G3 |
元件数量 | 1 | 1 | 1 | 1 | 1 | 1 |
端子数量 | 3 | 3 | 3 | 3 | 3 | 3 |
最高工作温度 | 150 °C | 150 °C | 150 °C | 150 °C | 150 °C | 150 °C |
封装主体材料 | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY |
封装形状 | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR |
封装形式 | SMALL OUTLINE | SMALL OUTLINE | SMALL OUTLINE | SMALL OUTLINE | SMALL OUTLINE | SMALL OUTLINE |
极性/信道类型 | NPN | NPN | NPN | NPN | NPN | NPN |
功耗环境最大值 | 0.225 W | 0.225 W | 0.225 W | 0.225 W | 0.225 W | 0.225 W |
认证状态 | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified |
表面贴装 | YES | YES | YES | YES | YES | YES |
端子形式 | GULL WING | GULL WING | GULL WING | GULL WING | GULL WING | GULL WING |
端子位置 | DUAL | DUAL | DUAL | DUAL | DUAL | DUAL |
晶体管元件材料 | SILICON | SILICON | SILICON | SILICON | SILICON | SILICON |
标称过渡频率 (fT) | 150 MHz | 150 MHz | 150 MHz | 150 MHz | 150 MHz | 150 MHz |
VCEsat-Max | 0.5 V | 0.5 V | 0.5 V | 0.5 V | 0.5 V | 0.5 V |
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