TO
-24
7
ARF461C(G)
ARF461D(G)
Common
Drain
RF POWER MOSFETs
N - CHANNEL ENHANCEMENT MODE
250V
150W
65MHz
The ARF461C and ARF461D comprise a symmetric pair of common drain RF power transistors designed for push-
pull scientific, commercial, medical and industrial RF power amplifier applications up to 65 MHz. They have been
optimized for both linear and high efficiency classes of operation.
•
Specified 250 Volt, 40.68 MHz Characteristics:
•
Output Power = 150 Watts.
•
Gain = 13dB (Class AB)
•
Efficiency = 75% (Class C)
•
Low Cost Common Source RF Package.
•
Low Vth thermal coefficient.
•
Low Thermal Resistance.
•
Optimized SOA for Superior Ruggedness.
• RoHS Compliant
MAXIMUM RATINGS
Symbol
V
DSS
V
DGO
I
D
V
GS
P
D
R
θ
JC
T
J
, T
STG
T
L
Parameter
Drain-Source Voltage
Drain-Gate Voltage
Continuous Drain Current @ T
C
= 25°C
Gate-Source Voltage
Total Power Dissipation @ T
C
= 25°C
Junction to Case
Operating and Storage Junction Temperature Range
Lead Temperature: 0.063” from Case for 10 Sec.
All Ratings: T
C
= 25°C unless otherwise specified.
ARF461CG/DG
1000
1000
6.5
±30
250
0.50
-55 to 150
300
Unit
V
A
V
W
°C/W
°C
STATIC ELECTRICAL CHARACTERISTICS
Symbol
BV
DSS
V
DS(ON)
I
DSS
I
GSS
g
fs
V
GS(TH)
Parameter
Drain-Source Breakdown Voltage (V
GS
= 0V, I
D
= 250
μA)
On State Drain Voltage
1
(I
D(ON)
= 3.25A, V
GS
= 10V)
Zero Gate Voltage Drain Current (V
DS
= V
DSS
, V
GS
= 0V)
Zero Gate Voltage Drain Current (V
DS
= 0.8V
DSS
, V
GS
= 0, T
C
= 125°C)
Gate-Source Leakage Current (V
DS
= ±30V, V
DS
= 0V)
Forward Transconductance (V
DS
= 25V, I
D
= 3.25A)
Gate Threshold Voltage (V
DS
= V
GS
, I
D
= 50mA)
3
3
4
5
Min
1000
6.5
25
250
±100
Typ
Max
Unit
V
μA
nA
mhos
Volts
6-2008
050-4933 Rev A
CAUTION:
These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
Microsemi Website - http://www.microsemi.com
Dynamic Characteristics
Symbol
C
ISS
C
oss
C
rss
t
d(on)
t
r
t
d(off)
t
f
Parameter
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-On Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Test Conditions
V
GS
= 0V
V
DS
= 50V
f = 1MHz
V
GS
= 15V
V
DD
= 0.5V
DSS
I
D
= I
D (Cont.)
@ 25°C
R
G
= 1.6Ω
Min
Typ
1700
175
50
8
5
21
10.1
ARF461C/D
Max
Unit
pF
ns
Functional Characteristics
Symbol
G
PS
η
Ψ
1
Characteristic
Common Source Amplifier Power Gain
Drain Efficiency
Electrical Ruggedness VSWR 10:1
Test Conditions
f = 40.68MHz
V
GS
= 0V V
DD
= 250V
P
OUT
= 150W
Min
13
70
Typ
15
75
Max
Unit
dB
%
No Degradation in Output Power
Pulse Test: Pulse width < 380
μS,
Duty Cycle < 2%
APT Reserves the right to change, without notice, the specifications and information contained herein.
30
25
20
GAIN (dB)
15
10
5
0
30
Class C
V
DD
= 150V
P
out
= 150W
CAPACITANCE (pf)
5000
C
iss
1000
500
C
oss
100
50
C
rss
60
75
90
105
120
FREQUENCY (MHz)
Figure 1, Typical Gain vs Frequency
45
.1
.5 1
5 10
50
200
V
DS
, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
Figure 2, Typical Capacitance vs. Drain-to-Source Voltage
10
8
I
D
, DRAIN CURRENT (AMPERES)
T
J
= -55°C
I
D
, DRAIN CURRENT (AMPERES)
V
DS
> I
D
(ON) x R
DS
(ON)MAX.
250μSEC. PULSE TEST
@ <0.5 % DUTY CYCLE
26
10
5
OPERATION HERE
(ON)
LIMITED BY R
DS
100uS
6
1mS
4
1
.5
T
C
=+25°C
T
J
=+150°C
SINGLE PULSE
10mS
6-2008
2
100mS
DC
050-4933 Rev A
T
J
= +125°C
T
J
= +25°C
T
J
= -55°C
0
0
2
4
6
8
V
GS
, GATE-TO-SOURCE VOLTAGE (VOLTS)
Figure 3, Typical Transfer Characteristics
.1
1
10
100
1000
V
DS
, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
Figure 4, Typical Maximum Safe Operating Area
ARF461C/D
1.2
I
D
, DRAIN CURRENT (AMPERES)
V
GS(th)
, THRESHOLD VOLTAGE
(NORMALIZED)
25
V
GS
=15, 10, 8 & 6.5V
20
6V
15
5.5V
1.1
1.0
0.9
10
5V
4.5V
4V
0.8
5
0
25 50 75 100 125 150
T
C
, CASE TEMPERATURE (°C)
Figure 5, Typical Threshold Voltage vs Temperature
0.60
0.50
0.9
0.40
0.30
0.7
0.5
0.7
-50 -25
0
1
5
10
15
20
25
30
V
DS
, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
Figure 6, Typical Output Characteristics
Z
θJC
, THERMAL IMPEDANCE (°C/W)
0.20
0.10
0
10
-5
0.3
0.1
0.05
10
-4
SINGLE PULSE
1.0
10
-3
10
-2
10
-1
RECTANGULAR PULSE DURATION (SECONDS)
Figure 9, Typical Maximum Effective Transient Thermal Impedance, Junction-To-Case vs Pulse Duration
RC MODEL
Junction
temp. ( ”C)
0.0284
0.00155F
Power
(Watts)
0.165
0.00934F
0.307
Case temperature
0.128F
Figure 9a, TRANSIENT THERMAL IMPEDANCE MODEL
Table 1 - Typical Class AB Large Signal Input - Output Impedance
Freq. (MHz)
2.0
13.5
27
40
65
Zin ( )
20.9 - j 9.2
2.4 - j 6.8
.57 - j 2.6
.31 - j 0.5
.44 + j 1.9
Z
OL
( )
38 - j 2.6
31 - j 14
19.6 - j 17.6
12.5 - j 15.8
6.0 - j 10.5
6-2008
050-4933 Rev A
Zin - Gate shunted with 25
I
DQ
= 100mA
Z
OL
- Conjugate of optimum load for 150 Watts output at Vdd = 125V
ARF461C/D
L4
Bias
0 - 12V
+
-
C6
R1
C7
L3
C9
L1
R2
C1
DUT
L2
C8
+
125V
-
RF
Input C2
C5
C4
C3
40.68 MHz Test Circuit
C1 -- 2000 pF 100V NPO chip
mounted at gate lead
C2-C5 -- Arco 463 Mica trimmer
C6-C8 -- .1 µF 500V ceramic chip
C9 -- 2200 pF 500V chip
RF
L1 -- 4t #20 AWG .25"ID .3 "L ~80nH
Output L2 -- 6t #16 AWG .312" ID .4"L ~185
L3 -- 15t #24 AWG .25"ID ~.85uH
L4 -- VK200-4B ferrite choke 3uH
R1-R2 -- 51 Ohm 0.5W Carbon
DUT = ARF461C/D
TO-247 Package Outline
4.69 .185
5.31 (.209)
1.49 (.059)
2.49 (.098)
6.15 (.242) BSC
15.49 (.610)
16.26 (.640)
5.38 (.212)
6.20 (.244)
20.80 (.819)
21.46 (.845)
3.50 (.138)
3.81 (.150)
NOTE:
These two parts comprise a symmetric pair of RF
power transistors and meet the same electrical specifica-
tions. The device pin-outs are the mirror image of each
other to allow ease of use as a push-pull pair.
Drain
4.50 (.177) Max.
0.40 (.016)
0.79 (.031) 19.81 (.780)
20.32 (.800)
1.01 (.040)
1.40 (.055)
2.87 (.113)
3.12 (.123)
1.65 (.065)
2.13 (.084)
Device
ARF- C
ARF- D
Gate ------- Source
Drain ---- Drain
Source ------- Gate
6-2008
2.21 (.087)
2.59 (.102)
5.45 (.215) BSC
2-Plcs.
Dimensions in Millimeters and (Inches)
050-4933 Rev A
Microsemi’s products are covered by one or more of U.S. patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583
4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 6,939,743, 7,352,045 5,283,201 5,801,417 5,648,283 7,196,634 6,664,594 7,157,886 6,939,743 7,342,262
and foreign patents. US and Foreign patents pending. All Rights Reserved.
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