MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Complementary Silicon Plastic
Power Transistors
. . . designed for use in general purpose amplifier and switching applications.
•
Collector–Emitter Saturation Voltage —
VCE = 1.2 Vdc (Max) @ IC = 3.0 Adc
•
Collector–Emitter Sustaining Voltage —
VCEO(sus) = 80 Vdc (Min.) BD241B, BD242B
VCEO(sus)
= 100 Vdc (Min.) BD241C, BD242C
•
High Current Gain — Bandwidth Product
fT = 3.0 MHz (Min) @ IC = 500 mAdc
•
Compact TO–220 AB Package
BD241B
BD241C*
PNP
BD242B
BD242C*
*Motorola Preferred Device
NPN
MAXIMUM RATINGS
Rating
Symbol
VCEO
VCES
VEB
IC
IB
BD241B
BD242B
80
90
BD241C
BD242C
100
115
3 AMPERE
POWER TRANSISTORS
COMPLEMENTARY
SILICON
80, 100 VOLTS
40 WATTS
PD, POWER DISSIPATION (WATTS)
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Unit
Vdc
Vdc
Vdc
Adc
Adc
Adc
Collector–Emitter Voltage
Collector–Emitter Voltage
Emitter–Base Voltage
5.0
3.0
5.0
1.0
Collector Current — Continuous
Peak
Base Current
Total Device Dissipation @ TC = 25
_
C
Derate above 25
_
C
Operating and Storage Junction
Temperature Range
PD
40
0.32
Watts
W/
_
C
TJ, Tstg
– 65 to + 150
_
C
CASE 221A–06
TO–220AB
THERMAL CHARACTERISTICS
Characteristic
Symbol
R
θJA
Max
Unit
Thermal Resistance, Junction to Ambient
Thermal Resistance, Junction to Case
62.5
_
C/W
_
C/W
R
θJC
3.125
40
30
20
10
0
0
20
40
60
80
100
120
140
160
TC, CASE TEMPERATURE (°C)
Figure 1. Power Derating
Preferred
devices are Motorola recommended choices for future use and best overall value.
REV 7
3–174
Motorola Bipolar Power Transistor Device Data
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1 Pulse Test: Pulse Width
2 fT = |hfe|
•
ftest.
ELECTRICAL CHARACTERISTICS
(TC = 25
_
C unless otherwise noted)
Motorola Bipolar Power Transistor Device Data
DYNAMIC CHARACTERISTICS
ON CHARACTERISTICS1
OFF CHARACTERISTICS
Small–Signal Current Gain
(IC = 0.5 Adc, VCE = 10 Vdc, f = 1 kHz)
Current Gain – Bandwidth Product2
(IC = 500 mAdc, VCE = 10 Vdc, ftest = 1 MHz)
Base–Emitter On Voltage
(IC = 3.0 Adc, VCE = 4.0 Vdc)
Collector–Emitter Saturation Voltage
(IC = 3.0 Adc, IB = 600 Adc)
DC Current Gain
(IC = 1.0 Adc, VCE = 4.0 Vdc)
(IC = 3.0 Adc, VCE = 4.0 Vdc)
Emitter Cutoff Current
(VBE = 5.0 Vdc, IC = 0)
Collector Cutoff Current
(VCE = 80 Vdc, VEB = 0)
(VCE = 100 Vdc, VEB = 0)
Collector Cutoff Current
(VCE = 60 Vdc, IB = 0)
Collector–Emitter Sustaining Voltage1
(IC = 30 mAdc, IB = 0)
APPROX
+ 11 V
Vin 0
TURN-ON PULSE
v
300
µs,
Duty Cycle
v
2.0%.
Characteristic
VCC
Vin
Cjd
%
Ceb
RK
RL
BD241B, BD241C, BD242B, BD242C
SCOPE
t, TIME (
µ
s)
VEB(off)
APPROX
+ 11 V
Figure 2. Switching Time Equivalent Circuit
Vin
t2
TURN-OFF PULSE
t1
t3
DUTY CYCLE 2.0%
APPROX – 9.0 V
t1 7.0 ns
100 t2 500
µs
t3 15 ns
v
t t
t
[
– 4.0 V
BD241B, BD242B
BD241C, BD242C
BD241B, BD242B
BD241C, BD242C
0.03
0.02
0.03
0.07
0.05
0.1
0.3
0.7
0.5
1.0
2.0
0.05 0.07 0.1
0.3
0.5 0.7 1.0
IC, COLLECTOR CURRENT (AMP)
BD241B BD241C BD242B BD242C
tr @ VCC = 10 V
VCE(sat)
VBE(on)
Symbol
VCEO
Figure 3. Turn–On Time
ICEO
IEBO
ICES
hFE
hfe
fT
tr @ VCC = 30 V
Min.
80
100
3.0
20
25
10
td @ VBE(off) = 2.0 V
Max.
200
200
1.8
1.2
1.0
0.3
IC/IB = 10
TJ = 25°C
3–175
mAdc
mAdc
µAdc
MHz
Unit
Vdc
Vdc
Vdc
3.0
BD241B BD241C BD242B BD242C
r(t), TRANSIENT THERMAL RESISTANCE
(NORMALIZED)
1.0
0.7
0.5
0.3
0.2
0.1
0.1
0.07
0.05
0.03
0.02
0.01
0.01
0.01
0.02
SINGLE PULSE
0.05
0.1
0.2
0.5
1.0
0.05
0.02
P(pk)
Z
θJC
(t) = r(t) R
θJC
R
θJC
= 3.125°C/W MAX
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
t1
READ TIME AT t1
t2
TJ(pk) – TC = P(pk) Z
θJC(t)
DUTY CYCLE, D = t1/t2
2.0
5.0
t, TIME (ms)
10
20
50
100
200
500 1.0 k
D = 0.5
0.2
Figure 4. Thermal Response
VCE , COLLECTOR–EMITTER VOLTAGE (VOLTS)
10
5.0
5.0 ms
2.0
1.0
0.5
SECOND BREAKDOWN
LIMITED @ TJ 150°C
THERMAL LIMITATION @ TC = 25°C
BONDING WIRE LIMITED
1.0 ms
100
µs
v
0.2
0.1
5.0
CURVES APPLY BELOW
RATED VCEO
BD241B, BD242B
BD241C, BD242C
100
There are two limitations on the power handling ability of a
transistor: average junction temperature and second break-
down. Safe operating area curves indicate IC – VCE limits of
the transistor that must be observed for reliable operation,
i.e., the transistor must not be subjected to greater dissipa-
tion than the curves indicate.
The data of Figure 5 is based on TJ(pk) = 150
_
C; TC is
variable depending on conditions. Second breakdown pulse
limits are valid for duty cycles to 10% provided T J(pk)
150
_
C, TJ(pk) may be calculated from the data in Fig-
ure 4. At high case temperatures, thermal limitations will
reduce the power that can be handled to values less than the
limitations imposed by second breakdown.
v
10
20
50
IC, COLLECTOR CURRENT (AMP)
Figure 5. Active Region Safe Operating Area
3.0
2.0
1.0
0.7
0.5
0.3
0.2
0.1
0.07
0.05
0.03
0.03
ts′
tf @ VCC = 30 V
IB1 = IB2
IC/IB = 10
ts′ = ts – 1/8 tf
TJ = 25°C
CAPACITANCE (pF)
300
TJ = + 25°C
200
t, TIME (
µ
s)
100
Ceb
70
50
Ccb
tf @ VCC = 10 V
0.05 0.07 0.1
0.2 0.3
0.5 0.7 1.0
IC, COLLECTOR CURRENT (AMP)
2.0 3.0
30
0.1
0.2 0.3
0.5
10
1.0
2.0 3.0 5.0
VR, REVERSE VOLTAGE (VOLTS)
20 30 40
Figure 6. Turn–Off Time
Figure 7. Capacitance
3–176
Motorola Bipolar Power Transistor Device Data
BD241B BD241C BD242B BD242C
500
300
hFE, DC CURRENT GAIN
TJ = 150°C
25°C
– 55°C
VCE = 2.0 V
VCE , COLLECTOR–EMITTER VOLTAGE (VOLTS)
2.0
TJ = 25°C
1.6
100
70
50
30
1.2
IC = 0.3 A
1.0 A
3.0 A
0.8
10
7.0
5.0
0.03
0.4
0.05 0.07 0.1
0.3
0.5 0.7 1.0
IC, COLLECTOR CURRENT (AMP)
3.0
0
1.0
2.0
5.0
10
20
50
100 200
IB, BASE CURRENT (mA)
500
1000
Figure 8. DC Current Gain
Figure 9. Collector Saturation Region
θ
V, TEMPERATURE COEFFICIENTS (mV/
°
C)
1.4
1.2
V, VOLTAGE (VOLTS)
1.0
0.8
VBE(sat) @ IC/IB = 10
0.6
VBE @ VCE = 2.0 V
0.4
0.2
VCE(sat) @ IC/IB = 10
0.1
0.2 0.3 0.5
1.0
2.0 3.0
TJ = 25°C
+ 2.5
+ 2.0
+ 1.5
+ 1.0
+ 0.5
0
– 0.5
– 1.0
– 1.5
– 2.0
– 2.5
0.003 0.005 0.01 0.02
0.05
0.1
0.2 0.3
0.5
1.0
2.0 3.0
θ
VB FOR VBE
*θVC FOR VCE(sat)
*APPLIES FOR IC/IB
≤
5.0
TJ = – 65°C TO + 150°C
0
0.003 0.005 0.01 0.020.03 0.05
IC, COLLECTOR CURRENT (AMPS)
IC, COLLECTOR CURRENT (AMP)
Figure 10. “On” Voltages
Figure 11. Temperature Coefficients
103
IC, COLLECTOR CURRENT (
µ
A)
102
101
100
10–1
REVERSE
10– 2
25°C
ICES
0
+ 0.1 + 0.2 + 0.3
+ 0.4 + 0.5
+ 0.6
FORWARD
VCE = 30 V
TJ = 150°C
100°C
RBE , EXTERNAL BASE–EMITTER RESISTANCE (OHMS)
107
IC = 10 x ICES
106
105
104
103
102
VCE = 30 V
IC
≈
ICES
IC = 2 x ICES
(TYPICAL ICES VALUES
OBTAINED FROM FIGURE 12)
20
40
60
80
100
120
140
160
10– 3
– 0.4 – 0.3 – 0.2 – 0.1
VBE, BASE–EMITTER VOLTAGE (VOLTS)
TJ, JUNCTION TEMPERATURE (°C)
Figure 12. Collector Cut–Off Region
Figure 13. Effects of Base–Emitter Resistance
Motorola Bipolar Power Transistor Device Data
3–177
CASE 221D
Isolated TO–220 Type
UL Recognized
File #E69369
1
2
3
STYLE 1:
PIN 1. BASE
2. COLLECTOR
3. EMITTER
Table 1. Plastic (Isolated TO–220 Type)
Device Type
ICCont
Amps
Max
1
2
VCEO(sus)
Volts
Min
250
400
700
1000
3
5
100
100
400
450
700
1000
1000
550
6
400
450
8
80
150
400
700
1200
700
1000
VCES
Volts
Min
hFE
Min/Max
30/150
14/34
14/34
@ IC
Amp
0.3
0.2
0.2
1
3
0.3
.005
0.3
0.5
0.5
0.5
2
3
5
1
1
4
4
3
1.5
8
Resistive Switching
ts
µs
Max
2 typ
2.75(3)
2.75(3)
0.6
1.5 typ
1.7(3)
4
1.7(3)
2.75(3)
2.5(3)
3.2(3)
0.5 typ
1 typ
3
2.5(3)
2.75(3)
—
0.5 typ
1.5 typ
2.75(3)
3
tf
µs
Max
0.17 typ
0.2(3)
0.175(3)
0.3
1.5 typ
0.15(3)
0.8
0.15(3)
0.2(3)
0.15(3)
0.15(3)
0.13 typ
0.15 typ
0.7
0.18(3)
0.18(3)
—
0.14 typ
1.5 typ
0.2(3)
0.7
3
8
@ IC
Amp
0.3
1
1
1
3
1
2.5
1
2
3
3
2
3
5
2
2
—
5
13 typ
12
14 typ
14 typ
4
30
4
14 typ
13 typ
2
40
20(1)
12
8
fT
MHz
Min
10
13 typ
13 typ
3
4(1)
12 typ
PD (Case)
Watts
@ 25°C
28
25
25
28
28
35
40
35
35
40
40
35
35
40
45
45
40
35
40
50
40
NPN
PNP
MJF47
BUL44F
MJF18002
MJF31C
MJF122
(2)
BUL45F
BUT11AF
MJF18004
MJF18204
BUL146F
MJF18006
MJF6107
MJF15030
MJF13007
BUL147F
MJF15031
MJF32C
MJF127
(2)
10 min
2000 min
14/34
10 min
14/34
18/35
14/34
14/34
30/90
40 min
5/30
14/34
16/34
450
10
60
80
100
450
12
400
1000
MJF18008
MJF3055
MJF44H11
MJF6388
(2)
MJF2955
MJF45H11
MJF6668
(2)
20/100
40/100
3k/20k
14/34
6/30
1000
700
MJF18009
MJF13009
(1)|h | @ 1 MHz
FE
(2)Darlington
(3)Switching tests performed w/special application simulator circuit. See data sheet for details.
Devices listed in bold, italic are Motorola preferred devices.
Motorola Bipolar Power Transistor Device Data
Selector Guide
2–3
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