GS816118(T/D)/GS816132(D)/GS816136(T/D)
100-Pin TQFP & 165-Bump BGA
Commercial Temp
Industrial Temp
Features
• FT pin for user-configurable flow through or pipeline
operation
• Single Cycle Deselect (SCD) operation
• IEEE 1149.1 JTAG-compatible Boundary Scan
• 2.5 V or 3.3 V +10%/–10% core power supply
• 2.5 V or 3.3 V I/O supply
• LBO pin for Linear or Interleaved Burst mode
• Internal input resistors on mode pins allow floating mode pins
• Default to Interleaved Pipeline mode
• Byte Write (BW) and/or Global Write (GW) operation
• Internal self-timed write cycle
• Automatic power-down for portable applications
• JEDEC-standard 100-lead TQFP and 165-bump BGA
packages
1M x 18, 512K x 32, 512K x 36
18Mb Sync Burst SRAMs
250 MHz–133 MHz
2.5 V or 3.3 V V
DD
2.5 V or 3.3 V I/O
counter may be configured to count in either linear or interleave order
with the Linear Burst Order (LBO) input. The Burst function need not
be used. New addresses can be loaded on every cycle with no
degradation of chip performance.
Flow Through/Pipeline Reads
The function of the Data Output register can be controlled by the user
via the FT mode pin (Pin 14). Holding the FT mode pin low places the
RAM in Flow Through mode, causing output data to bypass the Data
Output Register. Holding FT high places the RAM in Pipeline mode,
activating the rising-edge-triggered Data Output Register.
SCD Pipelined Reads
The GS816118(T/D)/GS816132(D)/GS816136(T/D) is a SCD (Single
Cycle Deselect) pipelined synchronous SRAM. DCD (Dual Cycle
Deselect) versions are also available. SCD SRAMs pipeline deselect
commands one stage less than read commands. SCD RAMs begin
turning off their outputs immediately after the deselect command has
been captured in the input registers.
Functional Description
Applications
The GS816118(T/D)/GS816132(D)/GS816136(T/D) is an
18,874,368-bit high performance synchronous SRAM with a 2-bit
burst address counter. Although of a type originally developed for
Level 2 Cache applications supporting high performance CPUs, the
device now finds application in synchronous SRAM applications,
ranging from DSP main store to networking chip set support.
Byte Write and Global Write
Byte write operation is performed by using Byte Write enable (BW)
input combined with one or more individual byte write signals (Bx).
In addition, Global Write (GW) is available for writing all bytes at one
time, regardless of the Byte Write control inputs.
Sleep Mode
Low power (Sleep mode) is attained through the assertion (High) of
the ZZ signal, or by stopping the clock (CK). Memory data is retained
during Sleep mode.
Controls
Addresses, data I/Os, chip enable (E1), address burst control inputs
(ADSP, ADSC, ADV) and write control inputs (Bx, BW, GW) are
synchronous and are controlled by a positive-edge-triggered clock
input (CK). Output enable (G) and power down control (ZZ) are
asynchronous inputs. Burst cycles can be initiated with either ADSP
or ADSC inputs. In Burst mode, subsequent burst addresses are
generated internally and are controlled by ADV. The burst address
Core and Interface Voltages
The GS816118(T/D)/GS816132(D)/GS816136(T/D) operates on a
2.5 V or 3.3 V power supply. All input are 3.3 V and 2.5 V
compatible. Separate output power (V
DDQ
) pins are used to decouple
output noise from the internal circuits and are 3.3 V and 2.5 V
compatible.
Parameter Synopsis
-250 -225 -200 -166 -150 -133 Unit
Pipeline
3-1-1-1
3.3 V
2.5 V
Flow
Through
2-1-1-1
3.3 V
2.5 V
t
KQ
tCycle
Curr (x18)
Curr (x36)
Curr (x18)
Curr (x36)
t
KQ
tCycle
Curr (x18)
Curr (x36)
Curr (x18)
Curr (x36)
2.5
4.0
280
330
275
320
5.5
5.5
175
200
175
200
2.7
4.4
255
300
250
295
6.0
6.0
165
190
165
190
3.0
5.0
230
270
230
265
6.5
6.5
160
180
160
180
3.4
6.0
200
230
195
225
7.0
7.0
150
170
150
170
3.8
6.7
185
215
180
210
7.5
7.5
145
165
145
165
4.0
7.5
165
190
165
185
8.5
8.5
135
150
135
150
ns
ns
mA
mA
mA
mA
ns
ns
mA
mA
mA
mA
Rev: 2.14 3/2005
1/36
© 1999, GSI Technology
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
GS816118(T/D)/GS816132(D)/GS816136(T/D)
TQFP Pin Description
Symbol
A
0
, A
1
A
DQ
A
DQ
B
DQ
C
DQ
D
NC
BW
B
A
, B
B,
B
C
, B
D
CK
GW
E
1
G
ADV
ADSP, ADSC
ZZ
TMS
TDI
TDO
TCK
FT
LBO
V
DD
V
SS
V
DDQ
Type
I
I
I/O
—
I
I
I
I
I
I
I
I
I
I
I
O
I
I
I
I
I
I
Description
Address field LSBs and Address Counter preset Inputs
Address Input
Data Input and Output pins
No Connect
Byte Write—Writes all enabled bytes; active low
Byte Write Enable for DQ
A
, DQ
B
Data I/Os; active low
Clock Input Signal; active high
Global Write Enable—Writes all bytes; active low
Chip Enable; active low
Output Enable; active low
Burst address counter advance enable; active low
Address Strobe (Processor, Cache Controller); active low
Sleep Mode control; active high
Scan Test Mode Select
Scan Test Data In
Scan Test Data Out
Scan Test Clock
Flow Through or Pipeline mode; active low
Linear Burst Order mode; active low
Core power supply
I/O and Core Ground
Output driver power supply
Rev: 2.14 3/2005
4/36
© 1999, GSI Technology
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
微控制器 MCU
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
