Fast reponse time: typically less than 1ps from 0 volts to
V
BR
min.
♦
Typical I
D
less than 1µA above 10V
♦
High temperature soldering: 250°C/10 seconds
at terminals
♦
Plastic package has Underwriters Laboratory
Flammability Classification 94V-O
MECHANICAL DATA
0.060 (1.52)
0.030 (0.76)
0.220 (5.59)
0.205 (5.21)
0.008 (0.203)
MAX.
Dimensions in inches and (millimeters)
Case:
JEDEC DO-214AA (SMB) molded plastic over
passivated junction
Terminals:
Solder plated solderable per MIL-STD-750,
Method 2026
Polarity:
For uni-directional types: Color band
denotes positive end (cathode)
Standard Packaging:
12mm tape (EIA STD RS-481)
Weight:
0.003 ounces, 0.093 gram
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25°C ambient temperature unless otherwise specified
SYMBOLS
VALUE
UNIT
Peak Pulse Power Dissipation on 10/1000µs
waveform
(NOTES 1, 2, Fig. 1)
Peak Pulse Current on 10/1000µs
waveform
(NOTE 1, Fig. 3)
Power Dissipation on Infinite Heatsink, T
A
=50°C
Peak Forward Surge Current, 10ms Single Half Sine-wave,
Undirectional Only
Max. Junction Temperature
Storage Temperature Range
Thermal Resistance Junction to Ambient Air
(NOTE 2)
Thermal Resistance Junction to Leads
P
PPM
I
PPM
P
M(AV)
I
FSM
T
J
T
STG
R
ΘJA
R
ΘJL
Minimum 600
See Table 1
5.0
100
150
-65 to +175
100
20
Watts
Amps
Watts
Amps
°C
°C
°C/W
°C/W
NOTES
(1) Non-repetitive current pulse, per Fig. 3 and derated above T
A
=25°C per Fig. 2
(2) Mounted on 5.0mm
2
(.013mm thick) land areas.
(3) Measured on 8.3ms single half sine-wave or equivalent squarewave, duty cycle 4 pulses per minute maximum.
1/21/99
ELECTRICAL CHARACTERISTICS RATINGS at (T
A
=25ºC unless otherwise noted)
Device Marking Code Standoff Leakage
Voltage Current
(3)
V
RM
I
RM
@ V
RM
Uni
SM6T6V8A
SM6T7V5A
SM6T10A
SM6T12A
SM6T15A
SM6T18A
SM6T22A
SM6T24A
SM6T27A
SM6T30A
SM6T33A
SM6T36A
SM6T39A
SM6T68A
SM6T100A
SM6T150A
SM6T200A
SM6T220A
KE7
KK7
KT7
KX7
LG7
LM7
LT7
LV7
LX7
ME7
MG7
MK7
MM7
NG7
NV7
PK7
PR7
PR8
Bi
KE7
AK7
AT7
AX7
LG7
BM7
BT7
LV7
BX7
CE7
MG7
CK7
CM7
NG7
NV7
PK7
PR7
PR8
(Volts)
5.80
6.40
8.55
10.2
12.8
15.3
18.8
20.5
23.1
25.6
28.2
30.8
33.3
58.1
85.5
128
171
188
(µA)
1000
500
10.0
5.00
1.00
1.00
1.00
1.00
1.00
1.00
1.00
1.00
1.00
1.00
1.00
1.00
1.00
1.00
Breakdown Voltage
V
BR
@ I
T
(2)
(Volts)
Min
6.45
7.13
9.50
11.4
14.3
17.1
20.9
22.8
25.7
28.5
31.4
34.2
37.1
64.6
95.0
143
190
209
Max
7.14
7.88
10.5
12.6
15.8
18.9
23.1
25.2
28.4
31.5
34.7
37.8
41.0
71.4
105
158
210
231
Test
Current
I
T
(mA)
10
10
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
Clamping Voltage Clamping Voltage
V
C
@ I
PP
V
C
@ I
PP
10/1000µs
8/20µs
(Volts)
10.5
11.3
14.5
16.7
21.2
25.2
30.6
33.2
37.5
41.5
45.7
49.9
53.9
92.0
137
207
274
328
(Amps)
57.0
53.0
41.0
36.0
28.0
24
20.0
18.0
16.0
14.5
13.1
12.0
11.1
6.50
4.40
2.90
2.20
2.00
(Volts)
13.4
14.5
18.6
21.7
27.2
32.5
39.3
42.8
48.3
53.5
59.0
64.3
69.7
121
178
265
353
388
(Amps)
298
276
215
184
147
123
102
93
83
75
68
62
57
33
22.5
15
11.3
10.3
5.7
6.1
7.3
7.8
8.4
8.8
9.2
9.4
9.6
9.7
9.8
9.9
10.0
10.4
10.6
10.8
10.8
10.8
α
T
Max
10
-4
/°C
Type
(1)
NOTES:
(1) For bi-directional devices add “C” for ±10% and “CA” for ±5% tolerance of V
BR
(2) V
BR
measured after I
T
applied for 300µs square wave pulse
(3) For bipolar devices with V
R
=10 Volts or under, the I
T
limit is doubled
APPLICATION NOTES
A 600W (SMB) device is normally selected when the threat of transients is from lightning induced transients, conducted via external leads or I/O lines. It is also used to pro-
tect against switching transients induced by large coils or industrial motors. Source impedance at component level in a system is usually high enough to limit the current
within the peak pulse current (I
PP
) rating of this series. In an overstress condition, the failure mode is a short circuit.
RECOMMENDED PAD SIZES
The pad dimensions should be 0.010” (0.25mm) longer than the contact size, in the lead axis. This allows a solder fillet to form, see figure below. Contact factory for
STM32F7 online training (OLT)：https://training.eeworld.com.cn/course/5494The STM32F7 series is one of our very high-performance MCUs. Taking advantage of ST’s ART Accelerator? as ......
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