MIMMK110A160UA
Features
·
Isolation voltage 3500 V~
·
Industrial Standard Package
·
High Surge Capability
·
Glass Passivated Chips
·
Simple Mounting
·
Electrically Isolated by DBC Ceramic
Applications
·
DC Motor Control and Drives
·
Battery Charges
·
Welders
·
Power Converters
·
Lighting Control
·
Heat and Temperature Control
Advantages
·
Space and weight savings
·
Improved temperature and power cycling
ABSOLUTE MAXIMUM RATINGS
Symbol
Test Condition
V
RRM
/V
DRM
I
T(AV)
I
T(RMS)
T
C
=85℃,180° conduction, half sine wave;
as AC switch;
T
J
=45℃,
t
=10m s (50H z),sine,
V
R
=0;
I
TSM
T
J
=45℃,
t 3 m s (60H z),sine,
V
R
=0;
=8.
T
J
=45℃,
t
=10m s (50H z),sine,
V
R
=V
RRM
;
T
J
=45℃,
t 3 m s (60H z),sine,
V
R
= V
RRM
;
=8.
T
J
=45℃,
t
=10m s (50H z),sine,
V
R
=0;
It
2
1600V 110A thyristor Module
RoHS Compliant
T
C
=25°C unless otherwise specified
Value
1600
110
235
1785
1870
1500
1570
16
17.5
11.2
12.3
20
500
3500
-40½130
-40½150
Unit
V
A
A
A
T
J
=45℃,
t 3 m s (60H z),sine,
V
R
=0;
=8.
T
J
=45℃,
t
=10m s (50H z),sine,
V
R
=V
RRM
;
T
J
=45℃,
t 3 m s (60H z),sine,
V
R
= V
RRM
;
=8.
KA s
2
I
DRM
/I
RRM
dV/dt
V
ISOL
T
J
T
STG
T
J
=130℃,V
D
=V
R
=1600V, gate open circuit;
T
J
=130℃, exponential to 67% rated V
DRM
50Hz, all terminals shorted, t=1s, I
ISOL
≤1mA ;
Max. junction operating temperature range
Max. storage temperature range
mA
V/us
V~
℃
℃
MIMMK110A160UA
ELECTRICAL CHARACTERISTICS
Symbol Test Condition
V
TO
r
t
I
H
I
L
V
TM
P
GM
P
GM(AV)
I
GM
-V
GT
V
GT
16.7% x p x I
AV
<
I
<
p x I
AV
,T
J
=130°C;
I
>
p x I
AV
, T
J
=130°C;
16.7% x p x I
AV
<
I
<
p x I
AV
,T
J
=130°C;
I
>
p x I
AV
, T
J
=130°C;
V
AK
= 6V, resistive load;
Anode supply =6V, resistive load=1 ,
gate pulse =10V, 100us;
I
TM
=345A, t
d
=10 ms, half sine
t
p
≤5ms, T
J
=125°C;
f=50Hz, T
J
=125°C;
t
p
≤5ms, T
J
T
C
=25°C unless otherwise specified
Min. Typ. Max.
0.80
0.85
2.37
2.25
250
400
1.64
12
3
3
10
4
2.5
1.7
270
150
80
0.25
6
150
Unit
V
V
m
m
mA
mA
V
W
W
A
V
V
=125°C;
J
V
A
=6V, R
A
=1 , T
V
A
=6V, R
A
=1 ;
=-40°C;
V
A
=6V, R
A
=1
,
T
J
=125°C;
V
A
=6V, R
A
=1
,
T
J
=-40°C;
I
GT
V
GD
I
GD
di/dt
V
A
=6V, R
A
=1 ;
V
A
=6V, R
A
=1
,
T
J
=125°C;
V
AK
=V
DRM
, T
J
=125℃
T
J
= 25℃,
V
D
=0.67V
DRM
, I
TM
=345A,
I
g
= 500mA, tr< 0.5 µs, tp > 6 µs
mA
V
mA
A/us
THERMAL AND MECHANICAL CHARACTERISTICS
Symbol Test Condition
R
thjc
R
THCS
Md
Weight
DC operation,per junction;
Mounting surface smooth,flat and greased,per junction
Mounting torque(M5)
Terminal connection torque(M5)
Typical value
T
C
=25°C unless otherwise specified
value
0.30
0.1
3 to 5
105
Unit
K/W
K/W
N·m
g
Characteristic curves
130
120
110
100
90
80
70
0
40
80
Average forward current(A)
30
○
Conduction angle
MIMMK110A160UA
130
Maximun allowable case tem (℃)
R
THJC
(DC)=0.30 K/W
Maximun allowable case tem (℃)
R
THJC
(DC)=0.30 K/W
120
110
100
90
80
70
60
0
30
○
Conduction period
60
○
90
○
120
○
180
○
120
60
○
90
○
120
○
180
○
DC
180
60
120
Average on-state current (A)
Figure 1.
current rating characteristics
Maximun average on-state power loss (W)
180
○
Maximun average on-state power loss (W)
160
140
120
100
80
60
40
20
0
0
Conduction angle
Figure 2.
current rating characteristics
200
180
160
140
120
80
60
40
20
0
0
DC
180
○
120
○
90
○
60
○
30
○
120
○
90
○
60
○
30
○
RMS limit
100
RMS limit
Conduction period
Per junction
T
J
=130℃
40
80
Average on-state current(A)
120
Per junction
T
J
=130℃
20 40 60 80 100 120 140 160 180
Average on-state current(A)
Figure 3.
on-state power loss characteristics
Peak Half Sine Wave On-state Current (A)
1500
At any rated load condition and with
rated V
RRM
applied following surge
Initial T
J
=130℃
@60Hz 0.0083 s
@50Hz 0.01 s
Peak Half Sine Wave On-state Current (A)
Figure 4.
on-state power loss characteristics
1800
1600
1400
1200
1000
800
600
0.01
Maximum non repetitive surge
current versus pulse train duration.
control of conduction may not be
maintained. Initial T = 130℃
no voltage reapplied
rated V
RRM
reapplied
J
1300
1100
900
Per junction
Per junction
0.1
Pulse Train Duration (s)
1
700
100
1
10
Number Of Equal Amplitude Half Cycle Current Pulses (N)
Figure 5.
Maximum Non-Repetitive Surge Current
Figure 6.
Maximum Non-Repetitive Surge Current
MIMMK110A160UA
350
Maximum Total On-state Power Loss (W)
300
250
200
150
100
50
0
Per module
T
J
=125℃
0
40
80
120 160
200
Total RMS Output Current (A)
240
Conduction angle
350
180
○
120
○
90
○
60
○
30
○
Maximum Total On-state Power Loss (W)
300
250
200
150
100
50
0
100 120 140
Maximum Allowable Ambient Temperature (℃)
On-State Power Loss Characteristics-2
0
20
40
60
80
R
THSA
=0.1K/W-Delta R
0.2K/W
0.3K/W
0.4K/W
0.7K/W
1K/W
2K/W
Figure 7. On-State Power Loss Characteristics-1
Transient Thermal Impedance Z
thJC
(K/W)
1000
Instantaneous On-state Current (A)
Figure.8
1
Steady State Value:
R
THJC
=0.30K/W
(DC Operation)
100
T
J
=25℃
T
J
=130℃
10
0.1
Per junction
1
0
3
Instantaneous On-state Voltage (V)
On State Voltage Drop Characteristics
1
2
0.01
0.001
0.1
0.01
1
Square Wave Pulse Duration (s)
10
Figure.9
Figure.10 Thermal Impedance ZthJC Characteristics
(1) P
GM
= 200 W, tp = 300s
(2) P
GM
= 60 W, tp = 1 ms
(3) P
GM
= 30 W, tp = 2 ms
(4) P
GM
= 12 W, tp = 5 ms
100
Rectangular gate pulse
Instantaneous Gate Voltage (V)
10
1
a)Recommended load line
for rated di/dt:20V, 20Ω
tr =0.5 s, tp≥6 s
b)Recommended load line
for
≤30%
rated di/dt:15V, (a)
40Ω
(b)
T
J
=-40℃
T
J
=25℃
T
J
=125℃
V
GD
I
GD
(4)
(3)
(2)
(1)
Frequency Limited by P
G(AV)
0.1
0.001
0.01
0.1
1
10
100
1000
Instantaneous Gate Current (A)
Figure.11 Gate Characteristics
MIMMK110A160UA
Package Outline (Dimensions in mm)
FPGA/CPLD
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