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FR202G

产品描述Rectifier Diode, 1 Element, 2A, 100V V(RRM),
产品类别分立半导体    二极管   
文件大小73KB,共2页
制造商Galaxy Semi-Conductor Co Ltd
标准
下载文档 详细参数 全文预览

FR202G概述

Rectifier Diode, 1 Element, 2A, 100V V(RRM),

FR202G规格参数

参数名称属性值
是否Rohs认证符合
厂商名称Galaxy Semi-Conductor Co Ltd
包装说明O-PALF-W2
Reach Compliance Codeunknown
应用GENERAL PURPOSE
外壳连接ISOLATED
配置SINGLE
二极管元件材料SILICON
二极管类型RECTIFIER DIODE
最大正向电压 (VF)1.3 V
JEDEC-95代码DO-15
JESD-30 代码O-PALF-W2
最大非重复峰值正向电流60 A
元件数量1
相数1
端子数量2
最高工作温度150 °C
最低工作温度-55 °C
最大输出电流2 A
封装主体材料PLASTIC/EPOXY
封装形状ROUND
封装形式LONG FORM
最大重复峰值反向电压100 V
最大反向电流5 µA
最大反向恢复时间0.15 µs
表面贴装NO
端子形式WIRE
端子位置AXIAL

FR202G文档预览

BL
FEATURES
Low cost
Low leakage
GALAXY ELECTRICAL
FR201G --- FR207G
VOLTAGE RANGE: 50 --- 1000 V
CURRENT: 2.0 A
GLASS PASSIVATED RECTIFIERS
DO - 15
Glass passivated junction
Low forward voltage drop
High current capability
z
Easily cleaned with alcohol,Isopropanol and similar
solvents
The plastic material carries U/L recognition 94V-0
Case:JEDEC DO-15,molded plastic
Terminals: Axial lead ,solderable per
MIL- STD-202,Method 208
Polarity: Color band denotes cathode
Weight: 0.014 ounces,0.39 grams
Mounting position: Any
MECHANICAL DATA
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25
ambient temperature unless otherwise specified.
Single phase,half wave,60 Hz,resistive or inductive load. For capacitive load,derate by 20%.
FR201G FR202G FR203G FR204G FR205G FR206G FR207G UNITS
Maximum recurrent peak reverse voltage
Maximum RMS voltage
Maximum DC blocking voltage
Maximum average forw ard rectified current
9.5mm lead length,
@T
A
=75
V
RRM
V
RMS
V
DC
I
F(AV)
50
35
50
100
70
100
200
140
200
400
280
400
2.0
600
420
600
800
560
800
1000
700
1000
V
V
V
A
Peak forw ard surge current
8.3ms single half-sine-w ave
superimposed on rated load
Maximum instantaneous forw ard voltage at
2.0A
Maximum reverse current
@T
J
=25
(Note1)
(Note2)
(Note3)
I
FSM
70.0
A
V
F
I
R
t
rr
C
J
R
θJA
T
J
T
STG
150
1.3
5.0
100.0
250
18.0
45.0
- 55 ---- + 175
- 55 ---- + 175
500
V
A
ns
pF
/W
at rated DC blocking voltage @T
J
=125
Maximum reverse recovery time
Typical junction capacitance
Typical thermal resistance
Operating junction temperature range
Storage temperature range
NOTE: 1. Measured with I
F
=0.5A, I
R
=1A, I
rr
=0.25A.
www.galaxycn.com
2. Measured at 1.0MH
Z
and applied rev erse v oltage of 4.0V DC.
3.Thermal resistance junction to ambient
Document Number 0269007
BL
GALAXY ELECTRICAL
1.
RATINGS AND CHARACTERISTIC CURVES
FIG.1 --FORWARD DERATING CURVE
FR201G --- FR207G
FIG.2 -- TYPICAL FORWARD CHARACTERISTICS
AVERAGE FORWARD RECTIFIED CURRENT
10
2.5
Single Phase
Half Wave 60HZ
Resistive or
Inductive Load
2.0
INSTANTANEOUS FORWARD CURRENT
AMPERES
1
T
J
=25
1.5
AMPERES
1.0
0.1
.5
Pulse width=300
s
0
25
.01
0.4
0.6
0.8
1.0
1.2
1.4
1.6
50
75
100
125
150
175
AMBIENT TEMPERATURE,
INSTANTANEOUS FORWARD VOLTAGE, VOLTS
FIG.3 --REAK FORWARD SURGE CURRENT
FIG.4 -- TYPICAL JUNCTION CAPACITANCE
100
PEAK FORWARD SURGE CURRENT
AMPERES
100
80
8.3ms Single Half
Sine-Wave
JUNCTION CAPACITANCE,pF
T
J
=25
20
10
60
40
20
0
1
5
10
50
100
1
1
4
10
100
NUMBER OF CYCLES AT 60Hz
REVERSE VOLTAGE,VOLTS
www.galaxycn.com
Document Number 0269007
BL
GALAXY ELECTRICAL
2.

 
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