The documentation and process conversion
measures necessary to comply with this
revision shall be completed by
28 November 2000.
INCH-POUND
MIL-PRF-19500/349E
28 August 2000
SUPERSEDING
MIL-PRF-19500/349D
12 December 1997
PERFORMANCE SPECIFICATION
SEMICONDUCTOR DEVICE, TRANSISTOR, NPN, SILICON, SWITCHING
TYPES 2N3506, 2N3506A, 2N3506L, 2N3506AL, 2N3507, 2N3507L, 2N3507A, 2N3507AL,
JAN, JANTX, JANTXV, AND JANS
This specification is approved for use by all Depart-
ments and Agencies of the Department of Defense.
1. SCOPE
1.1 Scope. This specification covers the performance requirements for NPN, silicon, switching transistors. Four
levels of product assurance are provided for each device type as specified in MIL-PRF-19500.
1.2 Physical dimensions. See figure 1 (similar to T0-39).
1.3 Maximum ratings. (1)
P
T
(2)
T
A
= +25°C
P
T
(3)
T
C
= +25°C
2N3506
2N3506A
W
1.0
W
5.0
V dc
60
2N3507
2N3507A
V dc
80
2N3506
2N3506A
V dc
40
2N3507
2N3507A
V dc
50
V dc
5.0
A dc
3.0
°C
-65 to
+200
°C/W
175
V
CBO
V
CEO
V
EBO
I
C
T
J
and
T
STG
R
θJA
(1) Electrical characteristics for "A", "AL", and "L" suffix devices are identical to non "L" suffix devices unless
otherwise noted.
(2) Derate linearly 5.71 mW/°C above T
A
= +25°C.
(3) Derate linearly 28.6 mW/°C above T
C
= +25°C.
1.4 Primary electrical characteristics. (1)
h
FE2
(2)
Limits
h
FE4
(2)
V
CE(sat)
I
C
= 1.5 A dc
I
B
= 150 mA dc
|h
fe
|
f = 20 Mhz
V
CE
= 5 V dc
I
C
= 100 mA dc
C
obo
V
CB
= 10 V dc
I
E
= 0
100 kHz
≤
f
≤
1 MHz
pF
3
15
40
t
on
t
off
V
CE
= 2.0 V dc
V
CE
= 5.0 V dc
I
C
= 1.5 A dc
I
C
= 3.0 A dc
2N3506
2N3507
2N3506
2N3507
2N3506A 2N3507A 2N3506A 2N3507A
I
C
= 1.5 A dc
I
B
= 150 mA dc
V dc
Min
Max
40
200
30
150
25
20
1.0
ns
45
ns
90
(1) Electrical characteristics for "A", "AL", and "L" suffix devices are identical to non "L" suffix devices unless
otherwise noted.
(2) Pulsed (see 4.5.1).
Beneficial comments (recommendations, additions, deletions) and any pertinent data which may be of use in improving
this document should be addressed to: (Defense Supply Center, Columbus, ATTN: DSCC/VAC,
Post Office Box 3990, Columbus, OH 43216-5000), by using the Standardization Document Improvement Proposal
(DD Form 1426) appearing at the end of this document or by letter.
AMSC N/A
DISTRIBUTION STATEMENT A. Approved for public release; distribution is unlimited.
FSC5961
MIL-PRF-19500/349E
Dimensions
Symbol
CD
CH
HD
LC
LD
LL
LU
L1
L2
P
Q
r
TL
TW
α
0.029
0.028
0.250
0.100
0.050
0.010
0.045
0.034
0.74
0.71
45
/
TP
0.016
Inches
0.305
0.240
0.335
0.335
0.260
0.370
Millimeters
7.75
6.10
8.51
5.08 TP
0.41
0.53
8.51
6.60
9.40
6
7, 8
7, 8, 11,12
0.48
1.27
6.35
2.54
1.27
0.25
1.14
0.86
7, 8
7, 8
7, 8
5
4
10
3
2
6
Notes
.200 TP
0.016
0.021
See notes
0.019
0.050
0.41
45
/
TP
NOTES:
1.
2.
3.
4.
5.
6.
7.
8.
9.
10.
11.
12.
13.
14.
Dimension are in inches.
Metric equivalents are given for general information only.
Beyond r (radius) maximum, TH shall be held for a minimum length of .011 (0.28 mm).
Dimension TL measured from maximum HD.
Body contour optional within zone defined by HD, CD, and Q.
Leads at gauge plane .054 +.001 -.000 inch (1.37 +0.03 -0.00 mm) below seating plane shall be within
.007 inch (0.18 mm) radius of true position (TP) at maximum material condition (MMC) relative to tab at
MMC.
Dimension LU applies between L
1
and L
2
. Dimension LD applies between L
2
and LL minimum. Diameter is
uncontrolled in L
1
and beyond LL minimum.
All three leads.
The collector shall be internally connected to the case.
Dimension r (radius) applies to both inside corners of tab.
For 2N3506L, 2N3507L, 2N3506AL, and 2N3507AL, dimension LL shall be 1.5 inches (38.1) mm minimum
and 1.75 inches (44.4 mm) maximum.
For 2N3506, 2N3506A, 2N3507, and 2N3507A dimension LL shall be 0.5 inches (12.7) mm minimum and
0.75 inches (19.0 mm) maximum.
In accordance with ANSI Y14.5M, diameters are equivalent to
φx
symbology.
Lead 1 = emitter, lead 2 = base, lead 3 = collector.
FIGURE 1. Physical dimensions (similar to TO-39).
2
MIL-PRF-19500/349E
2. APPLICABLE DOCUMENTS
2.1 Government documents.
2.1.1 Specifications, standards and handbooks. The following specifications, standards, and handbooks form a part
of this document to the extent specified herein. Unless otherwise specified, the issues of these documents are those
listed in the issue of the Department of Defense Index of Specifications and Standards (DODISS) and supplement
thereto, cited in the solicitation (see 6.2).
SPECIFICATION
DEPARTMENT OF DEFENSE
MIL-PRF-19500 - Semiconductor Devices, General Specification for.
STANDARD
DEPARTMENT OF DEFENSE
MIL-STD-750 - Test Methods for Semiconductor Devices.
(Unless otherwise indicated, copies of the above specifications, standards, and handbooks are available from the
Defense Automated Printing Service, Building 4D (DPM-DODSSP), 700 Robbins Avenue, Philadelphia, PA 19111-
5094.)
2.2 Order of precedence. In the event of a conflict between the text of this specification and the references cited
herein the text of this specification shall take precedence. Nothing in this specification, however, shall supersede
applicable laws and regulations unless a specific exemption has been obtained.
3. REQUIREMENTS
3.1 General. The requirements for acquiring the product described herein shall consist of this document and
MIL-PRF-19500.
3.2 Qualification. Devices furnished under this specification shall be products that are authorized by the qualifying
activity for listing on the applicable qualified products list before contract award (see 4.2 and 6.2 ).
3.3 Abbreviations, symbols, and definitions. Abbreviations, symbols, and definitions used herein shall be as specified
in MIL-PRF-19500.
3.4 Interface requirements and physical dimensions. The Interface requirements and physical dimensions shall be as
specified in MIL-PRF-19500, and figure 1 (similar to T0-39).
3.4.1 Lead finish. Lead finish shall be solderable in accordance with MIL-PRF-19500.
3.5 Marking. Marking shall be in accordance with MIL-PRF-19500.
3.6 Electrical performance characteristics. Unless otherwise specified herein, the electrical performance
characteristics are as specified in 1.3.
3.7 Electrical test requirements. The electrical test requirements shall be group A as specified herein.
3.8 Workmanship. Semiconductor devices shall be processed in such a manner as to be uniform in quality and shall
be free from other defects that will affect life, serviceability, or appearance.
3
MIL-PRF-19500/349E
4. VERIFICATION
4.1 Classification of Inspections. The inspection requirements specified herein are classified as follows:
a. Qualification inspection (see 4.2).
b. Screening (see 4.3)
c. Conformance inspection (see 4.4).
4.2 Qualification inspection. Qualification inspection shall be in accordance with MIL-PRF-19500.
4.3 Screening. Screening shall be in accordance with table IV of MIL-PRF-19500, and as specified herein. The
following measurements shall be made in accordance with table I herein. Devices that exceed the limits of table I herein
shall not be acceptable.
Screen (see table IV
of MIL-PRF-19500)
3c
7
9
10
11
Measurement
JANS level
JANTX and JANTXV levels
Thermal impedance (see 4.3.2)
Thermal impedance (see 4.3.2)
hermetic seal (optional)
(1)
Not applicable
I
CEX1
, h
FE2
48 hours minimum
48 hours minimum
I
CEX1
; h
FE2
;
I
CEX1
and h
FE2
∆I
CEX1
= 100 percent of initial value or 200 nA dc,
whichever is greater;
∆h
FE2
= 15 percent of initial value
See 4.3.1
240 hours minimum
Subgroups 2 and 3 of table I herein;
∆I
CEX1
= 100 percent of initial value or 200 nA dc,
whichever is greater;
∆h
FE2
= 15 percent of initial value.
See 4.3.1
80 hours minimum
Subgroup 2 of table I herein;
∆I
CEX1
= 100 percent of initial value or 200 nA
dc, whichever is greater;
∆h
FE2
= 15 percent of initial value.
12
13
(1) Hermetic seal test shall be performed in either screen 7 or screen 14.
4.3.1 Power burn-in conditions. Power burn-in conditions are as follows: T
A
= Room ambient as defined in 4.5 of
MIL-STD-750; V
CB
= 10-30 V dc; Power shall be applied to achieve T
J
= 135°C minimum and a minimum power
dissipation = 75 % of maximum rated P
T
(see 1.3).
NOTE: No heat sink or forced air cooling on the devices shall be permitted.
4
MIL-PRF-19500/349E
4.3.2 Thermal impedance (Z
θJX
measurements). The Z
θJX
measurements shall be performed in accordance with
MIL-STD-750, Method 3131.
a.
b.
c.
d.
e.
I
M
measurement current ................... 10 mA.
I
H
forward heating current ................ 500 mA (min).
t
H
heating time .................................. 25 - 30 ms.
t
md
measurement delay time............ 60
µs
max.
V
CE
collector-emitter voltage ........... 10 V dc minimum
The maximum limit for Z
θJX
under these test conditions are Z
θJX
(max) = 17.5°C/W.
4.4 Conformance inspection. Conformance inspection shall be in accordance with MIL-PRF-19500, and as specified
herein. If alternate screening is being performed in accordance with E.5.3.1d of MIL-PRF-19500, a sample of screened
devices shall be submitted to and pass the requirements of group A1 and A2 inspection only (table VIb, group B,
subgroup 1 is not required to be performed again if group B has already been satisfied in accordance with 4.4.2).
4.4.1 Group A inspection. Group A inspection shall be conducted in accordance with MIL-PRF-19500, and table I
herein.
4.4.2 Group B inspection. Group B inspection shall be conducted in accordance with the conditions specified for
subgroup testing in table VIa (JANS) of MIL-PRF-19500 and 4.4.2.1. See 4.4.2.2 for JAN, JANTX, and JANTXV group
B testing. Electrical measurements (end-points) shall be in accordance with table I, group A, subgroup 2.
4.4.2.1 Group B inspection, table VIa (JANS) of MIL-PRF-19500.
Subgroup
B3
B4
B5
Method
Condition
2037 Test condition A
1037 V
CB
= 10 V dc
1027 V
CB
= 10 V dc; T
A
= +125°C
±
25°C for 96 hours adjusted as required according to the
chosen T
A
to give a T
J
= +275°C minimum. Optionally, the test may be conducted for
minimum 216 hours with P
T
adjusted to achieve T
J
= 225°C minimum, sample size (for
option) = 45, c = 0. In this case, the ambient temperature shall be adjusted such that a
minimum 100% of maximum rated P
T
(see 1.3) is applied to the device under test.
(Note: If a failure occurs, resubmission shall be at the test conditions of the original sample.)
3131 See 4.5.2
B6
5
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