UNISONIC TECHNOLOGIES CO., LTD
4N30
4A, 300V N-CHANNEL
POWER MOSFET
DESCRIPTION
The UTC
4N30
is an N-channel mode power MOSFET using
UTC’s advanced technology to provide customers with a minimum
on-state resistance, low gate charge and superior switching
performance.
Power MOSFET
FEATURES
* R
DS(ON)
<2Ω @ V
GS
=10V, I
D
=4A
* High switching speed
* Typically 3.2nC low gate charge
* 100% avalanche tested
SYMBOL
ORDERING INFORMATION
Ordering Number
Lead Free
Halogen Free
4N30L-TN3-R
4N30G-TN3-R
4N30L-TN3-T
4N30G-TN3-T
Note: Pin Assignment: G: Gate D: Drain
S: Source
Package
TO-252
TO-252
Pin Assignment
1
2
3
G
D
S
G
D
S
Packing
Tape Reel
Tube
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QW-R502-850.A
4N30
ABSOLUTE MAXIMUM RATINGS
Power MOSFET
PARAMETER
SYMBOL
RATINGS
UNIT
Drain-Source Voltage
V
DSS
300
V
Gate-Source Voltage
V
GSS
±20
V
Continuous Drain Current
I
D
4
A
Avalanche Current
I
AR
4
A
Single Pulsed
E
AS
52
mJ
Avalanche Energy
Repetitive
E
AR
52
mJ
Power Dissipation
P
D
1.14
W
Junction Temperature
T
J
+150
°C
Storage Temperature
T
STG
-55~+150
°C
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
ELECTRICAL CHARACTERISTICS
PARAMETER
SYMBOL
TEST CONDITIONS
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
BV
DSS
I
D
=250µA, V
DS
=0V
Drain-Source Leakage Current
I
DSS
V
DS
=300V
Forward
V
GS
=+20V, V
DS
=0V
Gate-Source Leakage Current
I
GSS
Reverse
V
GS
=-20V, V
DS
=0V
ON CHARACTERISTICS
Gate Threshold Voltage
V
GS(TH)
I
D
=250µA
Static Drain-Source On-State Resistance
R
DS(ON)
V
GS
=10V, I
D
=4A
DYNAMIC PARAMETERS
Input Capacitance
C
ISS
Output Capacitance
C
OSS
V
GS
=0V, V
DS
=25V, f=1MHz
Reverse Transfer Capacitance
C
RSS
SWITCHING PARAMETERS
Total Gate Charge
Q
G
V
DD
=50V, I
D
=4A, I
G
=100µA,
Gate to Source Charge
Q
GS
V
GS
=10V
Gate to Drain Charge
Q
GD
Turn-ON Delay Time
t
D(ON)
Rise Time
t
R
V
DD
=30V, I
D
=4A, R
G
=25Ω,
V
GS
=0~10V
Turn-OFF Delay Time
t
D(OFF)
Fall-Time
t
F
SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS
Maximum Body-Diode Continuous Current
I
S
Maximum Body-Diode Pulsed Current
I
SM
Drain-Source Diode Forward Voltage
V
SD
I
S
=4A
MIN TYP MAX UNIT
300
V
1
µA
±100 nA
±100 nA
4
2
850
250
200
3.2
0.64
1.6
6
38
11
13
4
16
1.48
V
Ω
pF
pF
pF
nC
nC
nC
ns
ns
ns
ns
A
A
V
2
0.1
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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VER.A
4N30
TYPICAL CHARACTERISTICS
Power MOSFET
Drain Current, I
D
(µA)
Drain Current, I
D
(A)
Drain Current, I
D
(µA)
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
Drain Current, I
D
(A)
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QW-R502-850.A
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