CYStech Electronics Corp.
N-Channel Enhancement Mode Power MOSFET
Spec. No. : C948E3
Issued Date : 2014.03.05
Revised Date :
Page No. : 1/8
MTB1D7N03E3
Features
•
Low Gate Charge
•
Simple Drive Requirement
•
Fast Switching Characteristic
•
RoHS compliant package
BV
DSS
I
D
@V
GS
=10V
R
DSON(TYP) @
V
GS
=10V, I
D
=30A
R
DSON(TYP) @
V
GS
=4.5V, I
D
=20A
30V
203A
2mΩ
2.6mΩ
Symbol
MTB1D7N03E3
Outline
TO-220
G：Gate
D：Drain
S：Source
G D S
Ordering Information
Device
MTB1D7N03E3-0-UB-S
Package
Shipping
TO-220
50 pcs/tube, 20 tubes/box, 4 boxes / carton
(Pb-free lead plating package)
Environment friendly grade : S for RoHS compliant products, G for RoHS compliant and
green compound products
Packing spec, UB : 50 pcs / tube, 20 tubes/box
Product rank, zero for no rank products
Product name
MTB1D7N03E3
CYStek Product Specification
CYStech Electronics Corp.
Absolute Maximum Ratings
(T
C
=25°C, unless otherwise noted)
Parameter
Symbol
Spec. No. : C948E3
Issued Date : 2014.03.05
Revised Date :
Page No. : 2/8
Limits
Unit
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current @ T
C
=25°C, V
GS
=10V (silicon limit)
Continuous Drain Current @ T
C
=100°C, V
GS
=10V (silicon limit)
Continuous Drain Current @ T
C
=25°C, V
GS
=10V(package limit)
Pulsed Drain Current
Continuous Drain Current @ T
A
=25°C, V
GS
=10V
Continuous Drain Current @ T
A
=70°C, V
GS
=10V
Avalanche Current
Avalanche Energy @ L=100μH, I
D
=80A, R
G
=25Ω
T
C
=25°C
Power Dissipation
T
C
=100°C
T
A
=25°C
Power Dissipation
T
A
=70°C
Operating Junction and Storage Temperature
(Note 1)
(Note 3)
(Note 2)
(Note 2)
(Note 3)
(Note 2)
(Note 1)
(Note 1)
(Note 2)
(Note 2)
V
DS
V
GS
I
D
I
DM
I
DSM
I
AS
E
AS
P
D
P
DSM
Tj, Tstg
30
±20
203
144
120
600
20
16
80
320
214
107
2
1.3
-55~+175
V
A
mJ
W
W
°C
Thermal Data
Parameter
Thermal Resistance, Junction-to-case, max
Thermal Resistance, Junction-to-ambient, max, t≤10s
Thermal Resistance, Junction-to-ambient, max
Symbol
R
th,j-c
(Note 1)
(Note 1)
R
th,j-a
Value
0.7
15
62.5
Unit
°C/W
°C/W
°C/W
Note : 1
.
The power dissipation P
D
is based on T
J(MAX)
=175
°
C, using junction-to-case thermal resistance, and is more useful
in setting the upper dissipation limit for cases where additional heatsinking is used.
2
.
The value of R
θJA
is measured with the device mounted on 1 in²FR-4 board with 2 oz. copper, in a still air
environment with T
A
=25
°
C. The power dissipation P
DSM
is based on R
θJA
and the maximum allowed junction
temperature of 150°C. The value in any given application depends on the user’s specific board design, and the
maximum temperature of 175°C may be used if the PCB allows it.
3
.
Repetitive rating, pulse width limited by junction temperature T
J(MAX)
=175
°
C. Ratings are based on low frequency
and low duty cycles to keep initial T
J
=25°C.
4.
The maximum current limited by package is 120A.
5. The static characteristics are obtained using <300μs pulses, duty cycle 0.5% maximum.
6. The R
θJA
is the sum of thermal resistance from junction to case R
θJC
and case to ambient.
MTB1D7N03E3
CYStek Product Specification
CYStech Electronics Corp.
Characteristics (T
C
=25°C, unless otherwise specified)
Symbol
Static
BV
DSS
V
GS(th)
G
FS
I
GSS
I
DSS
*R
DS(ON)
Min.
30
1.3
-
-
-
-
-
-
Typ.
-
1.9
52
-
-
-
2
2.6
41
14
17
30
21
142
84
5385
935
854
1.6
-
-
0.79
Max.
-
2.5
-
±
100
1
5
2.6
3.8
-
-
-
-
-
-
-
-
-
-
4
203
600
1.2
Unit
V
S
nA
μA
m
Ω
Test Conditions
Spec. No. : C948E3
Issued Date : 2014.03.05
Revised Date :
Page No. : 3/8
V
GS
=0V, I
D
=250μA
V
DS
= V
GS
, I
D
=250μA
V
DS
=5V, I
D
=20A
V
GS
=
±
20V
V
DS
=24V, V
GS
=0V
V
DS
=24V, V
GS
=0V, Tj=55°C
V
GS
=10V, I
D
=30A
V
GS
=4.5V, I
D
=20A
I
D
=15A, V
DS
=15V, V
GS
=4.5V
Dynamic
*Qg
-
*Qgs
-
*Qgd
-
*t
d(ON)
-
*tr
-
*t
d(OFF)
-
*t
f
-
Ciss
-
Coss
-
Crss
-
Rg
-
Source-Drain Diode
*I
S
-
*I
SM
-
*V
SD
-
nC
ns
V
DS
=15V, I
D
=1A, V
GS
=10V, R
G
=3.3
Ω
pF
Ω
A
V
V
GS
=0V, V
DS
=15V, f=1MHz
V
DS
=0V, V
GS
=0V, f=1MHz
I
S
=20A, V
GS
=0V
*Pulse Test : Pulse Width
≤300μs,
Duty Cycle≤2%
MTB1D7N03E3
CYStek Product Specification
CYStech Electronics Corp.
Typical Characteristics
Typical Output Characteristics
400
350
I
D
, Drain Current(A)
300
250
200
150
100
50
0
0
1
2
3
4
V
DS
, Drain-Source Voltage(V)
5
V
GS
=3.5V
V
GS
=3V
4.5V
Spec. No. : C948E3
Issued Date : 2014.03.05
Revised Date :
Page No. : 4/8
Brekdown Voltage vs Ambient Temperature
1.4
1.2
BV
DSS
, Normalized Drain-Source
Breakdown Voltage
10V, 6V, 5V
V
GS
=4V
1
0.8
0.6
0.4
-75 -50 -25 0 25 50 75 100 125 150 175
Tj, Junction Temperature(°C)
Reverse Drain Current vs Source-Drain Voltage
I
D
=250
μ
A,
V
GS
=0V
Static Drain-Source On-State resistance vs Drain Current
1000
R
DS(ON)
, Static Drain-Source On-State
Resistance(mΩ)
V
SD
, Source-Drain Voltage(V)
1.2
1
Tj=25°C
100
V
GS
=4.5V
0.8
0.6
Tj=150°C
10
V
GS
=7V
V
GS
=10V
0.4
0.2
1
0.01
0.1
1
10
I
D
, Drain Current(A)
100
0
4
8
12
16
I
DR
, Reverse Drain Current(A)
20
Static Drain-Source On-State Resistance vs Gate-Source
Voltage
Drain-Source On-State Resistance vs Junction Tempearture
100
90
R
DS(ON)
, Static Drain-Source On-
State Resistance(mΩ)
70
60
50
40
30
20
10
0
0
2
4
6
8
V
GS
, Gate-Source Voltage(V)
10
80
I
D
=20A
2.4
V
GS
=10V, I
D
=20A
R
DS(ON)
, Normalized Static Drain-
Source On-State Resistance
2
1.6
1.2
0.8
R
DS(ON)
@Tj=25°C :2mΩ typ
0.4
-75 -50 -25 0 25 50 75 100 125 150 175
Tj, Junction Temperature(°C)
MTB1D7N03E3
CYStek Product Specification
CYStech Electronics Corp.
Typical Characteristics(Cont.)
Capacitance vs Drain-to-Source Voltage
Ciss
Spec. No. : C948E3
Issued Date : 2014.03.05
Revised Date :
Page No. : 5/8
NormalizedThreshold Voltage vs Junction Tempearture
V
GS(th)
, Normalized Threshold Voltage
1.4
1.2
I
D
=1mA
10000
Capacitance---(pF)
C
oss
1
0.8
I
D
=250μA
1000
Crss
0.6
0.4
100
0.1
1
10
V
DS
, Drain-Source Voltage(V)
100
-75 -50 -25
0 25 50 75 100 125 150 175
Tj, Junction Temperature(°C)
Forward Transfer Admittance vs Drain Current
100
G
FS
, Forward Transfer Admittance(S)
10
8
6
4
2
0
0.01
0.1
1
I
D
, Drain Current(A)
10
100
0
10
20
V
DS
=15V
I
D
=15A
Gate Charge Characteristics
10
1
V
DS
=5V
Pulsed
Ta=25°C
0.1
0.01
0.001
V
GS
, Gate-Source Voltage(V)
30 40 50 60 70 80
Total Gate Charge---Qg(nC)
90 100
Maximum Safe Operating Area
1000
100
μ
s
R
DS(ON)
Limit
1ms
10ms
100ms
DC
Maximum Drain Current vs Case Temperature
250
I
D
, Maximum Drain Current(A)
I
D
, Drain Current(A)
100
200
150
100
package limit
silicon imit
10
1
T
C
=25°C, Tj=175°, V
GS
=10V
R
θJC
=0.7°C/W, Single Pulse
50
V
GS
=10V, R
θ
JC
=0.7°C/W
0.1
0.1
1
10
V
DS
, Drain-Source Voltage(V)
100
0
25
50
75
100 125 150
T
C
, Case Temperature(°C)
175
200
MTB1D7N03E3
CYStek Product Specification
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