CYStech Electronics Corp.
20V N-Channel Enhancement Mode MOSFET
Spec. No. : C915N3
Issued Date : 2013.10.08
Revised Date :
Page No. : 1/8
MTA340N02N3
Features
•
Simple drive requirement
•
Small package outline
•
Pb-free lead plating and halogen-free package
BV
DSS
I
D
R
DSON
@V
GS
=4.5V, I
D
=650mA
R
DSON
@V
GS
=2.5V,I
D
=500mA
R
DSON
@V
GS
=1.8V,I
D
=200mA
20V
820mA
299mΩ(typ)
541mΩ(typ)
1.05Ω (typ)
Symbol
MTA340N02N3
Outline
SOT-23
D
G：Gate
S：Source
D：Drain
G
S
Absolute Maximum Ratings
(Ta=25°C)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current @ T
A
=25°C , V
GS
=4.5V
Continuous Drain Current @ T
A
=70°C, V
GS
=4.5V
Pulsed Drain Current
(Notes 1, 2)
Power Dissipation
ESD susceptibility
Operating Junction and Storage Temperature
Note : 1. Pulse width limited by maximum junction temperature.
2. Pulse width≤ 300μs, duty cycle≤2%.
3. Surface mounted on 1 in² copper pad of FR-4 board, t≤10s.
4. Surface mounted on FR-4 board of minimum pad size.
5. Human body model, 1.5kΩ in series with 100pF.
Symbol
V
DS
V
GS
I
D
I
DM
P
D
V
ESD
Tj, Tstg
Limits
20
±12
820
(Note 4)
656
(Note 4)
3.3
1.38
(Note 3)
0.35
(Note 4)
1400
(Note 5)
-55~+150
Unit
V
mA
A
W
V
°C
MTA340N02N3
CYStek Product Specification
CYStech Electronics Corp.
Thermal Performance
Parameter
Thermal Resistance, Junction-to-Ambient, max
Thermal Resistance, Junction-to-Case, max
Symbol
Rth,ja
R
θJC
Spec. No. : C915N3
Issued Date : 2013.10.08
Revised Date :
Page No. : 2/8
Limit
90
80
Unit
°C/W
°C/W
Note : Surface mounted on 1 in² copper pad of FR-4 board, 357°C/W when mounted on minimum copper pad.
Electrical Characteristics (Tj=25°C, unless otherwise noted)
Symbol
Static
BV
DSS
V
GS(th)
I
GSS
I
DSS
*R
DS(ON)
*G
FS
Dynamic
Ciss
Coss
Crss
t
d(ON)
t
r
t
d(OFF)
t
f
Qg
Qgs
Qgd
Source-Drain Diode
*V
SD
Min.
20
0.45
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Typ.
-
0.66
-
-
-
299
541
1.05
870
35
11
9
7
21
25
47
1
0.05
0.4
0.78
Max.
-
1.0
±
10
1
10
390
705
1.5
-
-
-
-
-
-
-
-
-
-
-
1.0
Unit
V
V
μA
mΩ
Ω
mS
Test Conditions
V
GS
=0, I
D
=250μA
V
DS
=V
GS
, I
D
=250μA
V
GS
=
±
12V, V
DS
=0
V
DS
=16V, V
GS
=0
V
DS
=16V, V
GS
=0 (Tj=70
°C)
V
GS
=4.5V, I
D
=650mA
V
GS
=2.5V, I
D
=500mA
V
GS
=1.8V, I
D
=200mA
V
DS
=10V, I
D
=400mA
pF
V
DS
=15V, V
GS
=0, f=1MHz
V
DS
=15V, I
D
=500mA, V
GS
=4.5V,
R
G
=6
Ω
ns
nC
V
DS
=15V, I
D
=500mA, V
GS
=4.5V
V
V
GS
=0V, I
S
=150mA
*Pulse Test : Pulse Width
≤300μs,
Duty Cycle≤2%
Ordering Information
Device
MTA340N02N3-0-T1-G
Package
SOT-23
(Pb-free lead plating and halogen-free package)
Shipping
3000 pcs / tape & reel
Environment friendly grade : S for RoHS compliant products, G for RoHS compliant and
green compound products
Packing spec, T1 : 3000 pcs / tape & reel,7” reel
Product rank, zero for no rank products
Product name
MTA340N02N3
CYStek Product Specification
CYStech Electronics Corp.
Typical Characteristics
Typical Output Characteristics
3.5
3.0
V
GS
=4.5V
I
D
, Drain Current (A)
2.5
2.0
1.5
1.0
0.5
0.0
0
0.5
1
1.5
V
DS
, Drain-Source Voltage(V)
2
V
GS
=2.5V
V
GS
=3.5V
V
GS
=3V
Spec. No. : C915N3
Issued Date : 2013.10.08
Revised Date :
Page No. : 3/8
Brekdown Voltage vs Ambient Temperature
1.4
BV
DSS
, Normalized Drain-Source
Breakdown Voltage
V
GS
=5V
V
GS
=4V
I
D
=250
μ
A,
V
GS
=0V
1.2
1
V
GS
=2V
V
GS
=1.5V
0.8
0.6
-75 -50 -25
0 25 50 75 100 125 150 175
Tj, Junction Temperature(°C)
Static Drain-Source On-State resistance vs Drain Current
2000
R
DS(on)
, Static Drain-Source On-State
Resistance(mΩ)
1800
1600
1400
1200
1000
800
600
400
200
0
0.001
0.01
V
GS
=4.5V
0.1
I
D
, Drain Current(A)
1
10
V
GS
=2.5V
V
GS
=1.8V
Reverse Drain Current vs Source-Drain Voltage
1
V
SD
, Source-Drain Voltage(V)
Tj=25°C
V
GS
=1.5V
0.8
0.6
0.4
0.2
V
GS
=0V
Tj=150°C
0
0
0.2
0.4
0.6
0.8
I
DR
, Reverse Drain Current (A)
1
Static Drain-Source On-State Resistance vs Gate-Source
Voltage
Drain-Source On-State Resistance vs Junction Tempearture
2000
R
DS(ON)
, Static Drain-Source On-
State Resistance(mΩ)
I
D
=650mA
1.8
R
DS(ON)
, Normalized Static Drain-
Source On-State Resistance
1.6
1.4
1.2
1
0.8
0.6
R
DS(ON)
@Tj=25°C : 299mΩ typ.
V
GS
=4.5V, I
D
=650mA
1800
1600
1400
1200
1000
800
600
400
200
0
0
2
4
6
8
V
GS
, Gate-Source Voltage(V)
10
-75 -50 -25
0 25 50 75 100 125 150 175
Tj, Junction Temperature(°C)
MTA340N02N3
CYStek Product Specification
CYStech Electronics Corp.
Typical Characteristics(Cont.)
Capacitance vs Drain-to-Source Voltage
V
GS(th)
, Normalized Threshold Voltage
100
Ciss
Spec. No. : C915N3
Issued Date : 2013.10.08
Revised Date :
Page No. : 4/8
Threshold Voltage vs Junction Tempearture
1.2
1.1
1
0.9
0.8
0.7
0.6
0.5
0.4
-60 -40 -20
0
20 40
60 80 100 120 140 160
I
D
=250
μ
A
Capacitance---(pF)
C
oss
10
Crss
1
0.1
1
10
V
DS
, Drain-Source Voltage(V)
100
Tj, Junction Temperature(°C)
Single Pulse Power Rating, Junction to Ambient
(Note on page 2)
G
FS
, Forward Transfer Admittance(S)
5
4
Power (W)
3
2
1
0
0.01
0.1
1
Pulse Width(s)
10
100
T
J(MAX)
=150°C
T
A
=25°C
R
θJA
=357°C/W
Forward Transfer Admittance vs Drain Current
10
1
0.1
V
DS
=10V
Ta=25°C
Pulsed
0.01
0.001
0.01
0.1
, Drain Current(A)
I
D
1
Maximum Safe Operating Area
10
I
D
, Maximum Drain Current(A)
100
μ
s
Maximum Drain Current vs JunctionTemperature
1
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0
25
T
A
=25°C, V
GS
=4.5V, R
θJA
=357°C/W
I
D
, Drain Current (A)
1
1ms
10ms
0.1
100ms
DC
0.01
T
A
=25°C, Tj=150°C,
V
GS
=4.5V, R
θ
JA
=357°C/W
Single Pulse
0.001
0.01
0.1
1
10
V
DS
, Drain-Source Voltage(V)
100
50
75
100
125
150
Tj, Junction Temperature(°C)
175
MTA340N02N3
CYStek Product Specification
CYStech Electronics Corp.
Typical Characteristics(Cont.)
Gate Charge Characteristics
10
V
GS
, Gate-Source Voltage(V)
P
D
, Power Dissipation(mW)
8
6
4
V
DS
=15V
I
D
=500mA
Spec. No. : C915N3
Issued Date : 2013.10.08
Revised Date :
Page No. : 5/8
Power Derating Curve
400
350
300
250
200
150
100
50
Mounted on FR-4 board with
minimum pad
2
0
0
0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8
Qg, Total Gate Charge(nC)
2
0
0
20
40
60
80 100 120
T
A
, Ambient Temperature(℃)
140
160
Transient Thermal Response Curves
1
D=0.5
Normalized Transient Thermal Resistance
0.2
0.1
0.1
0.05
0.02
0.01
0.01
1.R
θ
JA
(t)=r(t)*R
θJA
2.Duty Factor, D=t
1
/t
2
3.T
JM
-T
A
=P
DM
*Z
θ
JA
(t)
4.R
θJA
=357
°C/W
Single Pulse
0.001
1.E-04
1.E-03
1.E-02
1.E-01
1.E+00
1.E+01
1.E+02
1.E+03
t
1
, Square Wave Pulse Duration(s)
Recommended Soldering Footprint
MTA340N02N3
CYStek Product Specification
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