CYStech Electronics Corp.
General Purpose NPN Epitaxial Planar Transistor
Spec. No. : C617D3
Issued Date : 2008.06.04
Revised Date :
Page No. : 1/5
MJE13003D3
Features
•
High breakdown voltage, V
CEO
=400V (min.)
•
High collector current, I
C(max)
=1.5A (DC)
•
Pb-free package
Symbol
MJE13003D3
Outline
TO-126ML
B：Base
C：Collector
E：Emitter
B C E
Absolute Maximum Ratings
(Ta=25°C)
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current(DC)
Collector Current(Pulsed)
Base Current
Power Dissipation(T
A
=25℃)
Power Dissipation(T
C
=25℃)
Junction Temperature
Storage Temperature
Note : Single pulse, Pw≤300μs, Duty Cycle≤2%
.
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
CP
I
B
Pd
Limits
700
400
9
1.5
3
(Note )
0.2
1.5
20
Unit
V
V
V
A
A
A
W
W
Tj
Tstg
150
-55~+150
°C
°C
MJE13003D3
CYStek Product Specification
CYStech Electronics Corp.
Characteristics
(Ta=25°C)
Symbol
BV
CBO
BV
CEO
BV
EBO
I
CBO
I
CEO
I
EBO
*V
CE(SAT)
*V
CE(SAT)
*V
BE(SAT)
*h
FE
1
*h
FE
2
f
T
t
stg
t
f
Min.
700
400
9
-
-
-
-
-
-
10
5
5
-
1.8
Typ.
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Max.
-
-
-
10
500
10
300
600
1.2
30
-
-
0.5
6.6
Unit
V
V
V
μA
μA
μA
mV
mV
V
-
-
MHz
μs
Spec. No. : C617D3
Issued Date : 2008.06.04
Revised Date :
Page No. : 2/5
Test Conditions
I
C
=100μA
I
C
=10mA
I
E
=2mA
V
CB
=700V, I
E
=0
V
CE
=400V, I
E
=0
V
EB
=9V, I
C
=0
I
C
=500mA, I
B
=100mA
I
C
=1A, I
B
=250mA
I
C
=1A, I
B
=250mA
V
CE
=5V, I
C
=500mA
V
CE
=5V, I
C
=1.5A
V
CE
=10V, I
C
=100mA, f=100MHz
V
CC
=100V, I
C
=1A, I
B
1=-I
B
2=0.2A,
I
C
=0.25A
*Pulse Test: Pulse Width
≤380μs,
Duty Cycle≤2%
Classification Of h
FE
Rank
Range
A
10~15
B
15~20
C
20~25
D
25~30
Ordering Information
Device
MJE13003D3
Package
TO-126ML
(Pb-free)
Shipping
200 pcs / Bag, 15 Bags/Box, 10 Boxes/Carton
Marking
13003
MJE13003D3
CYStek Product Specification
CYStech Electronics Corp.
Characteristic Curves
Current Gain vs Collector Current
100
VCE=5V
Spec. No. : C617D3
Issued Date : 2008.06.04
Revised Date :
Page No. : 3/5
Saturation Voltage vs Collector Current
1000
VCE(SAT)
Saturation Voltage---(mV)
Current Gain---HFE
IC=4IB
10
100
VCE=1V
VCE=2V
1
10
100
1000
10000
Collector Current---IC(mA)
IC=3IB
10
1
10
100
1000
Collector Current---IC(mA)
10000
Saturation Voltage vs Collector Current
10000
On Vottage vs Collector Current
1000
VBE(SAT)
Saturation Voltage---(mV)
IC=3IB
On Voltage---(mV)
VBE(ON)@VCE=2V
1000
IC=4IB
100
10
100
1000
Collector Current---IC(mA)
10000
100
1
10
100
1000
Collector Current---IC(mA)
10000
Power Derating Curve
1.6
1.4
Power Dissipation---PD(W)
1.2
1
0.8
0.6
0.4
0.2
0
0
50
100
150
Ambient Temperature---TA(℃)
200
0
0
Power Dissipation---PD(W)
20
15
10
5
25
Power Derating Curve
50
100
150
Case Temperature---TC(℃)
200
MJE13003D3
CYStek Product Specification
CYStech Electronics Corp.
Recommended wave soldering condition
Product
Pb-free devices
Peak Temperature
260 +0/-5
°C
Spec. No. : C617D3
Issued Date : 2008.06.04
Revised Date :
Page No. : 4/5
Soldering Time
5 +1/-1 seconds
Recommended temperature profile for IR reflow
Profile feature
Average ramp-up rate
(Tsmax to Tp)
Preheat
−Temperature
Min(T
S
min)
−Temperature
Max(T
S
max)
−Time(ts
min
to ts
max
)
Time maintained above:
−Temperature
(T
L
)
−
Time (t
L
)
Peak Temperature(T
P
)
Time within 5°C of actual peak
temperature(tp)
Ramp down rate
Time 25
°C
to peak temperature
Sn-Pb eutectic Assembly
3°C/second max.
100°C
150°C
60-120 seconds
183°C
60-150 seconds
240 +0/-5
°C
10-30 seconds
6°C/second max.
6 minutes max.
Pb-free Assembly
3°C/second max.
150°C
200°C
60-180 seconds
217°C
60-150 seconds
260 +0/-5
°C
20-40 seconds
6°C/second max.
8 minutes max.
Note : All temperatures refer to topside of the package, measured on the package body surface.
MJE13003D3
CYStek Product Specification
CYStech Electronics Corp.
TO-126ML Dimension
Marking:
Spec. No. : C617D3
Issued Date : 2008.06.04
Revised Date :
Page No. : 5/5
Device
Name
13003
□□□
Date
Code
Style: Pin 1.Base 2.Collector 3.Emitter
3-Lead TO-126ML Plastic Package
CYStek Package Code: D3
*: Typical
DIM
A
A1
b
b1
c
D
E
Inches
Min.
Max.
0.118
0.134
0.071
0.087
0.026
0.034
0.046
0.054
0.018
0.024
0.307
0.323
0.425
0.441
Millimeters
Min.
Max.
3.000
3.400
1.800
2.200
0.660
0.860
1.170
1.370
0.450
0.600
7.800
8.200
10.800
11.200
DIM
e
e1
L
L1
P
Φ
1
Φ
2
Inches
Min.
*0.090
0.176
0.594
0.051
0.159
0.118
0.122
0.183
0.610
0.059
0.167
0.126
0.130
Max.
Millimeters
Min.
Max.
*2.28
4.460
4.660
15.100
15.500
1.300
1.500
4.040
4.240
3.000
3.200
3.100
3.300
Notes:
1.Controlling dimension: millimeters.
2.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material.
3.If there is any question with packing specification or packing method, please contact your local CYStek sales office.
Material:
•
Lead: KFC ; solder plating
•
Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0
Important Notice:
•
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of CYStek.
•
CYStek reserves the right to make changes to its products without notice.
•
CYStek
semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems.
•
CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance.
MJE13003D3
CYStek Product Specification
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