SBESD5301N
Elektronische Bauelemente
82W, 5V
Ultra Low Capacitance
ESD Protection for high-speed interfaces
RoHS Compliant Product
A suffix of “-C” specifies halogen and lead-free
DESCRIPTION
The SBESD5301N is an ultra-low capacitance TVS
(Transient Voltage Suppressor) designed to protect high
speed data interfaces. It has been specifically designed to
protect sensitive electronic components which are connected
to data and transmission lines from over-stress caused by
ESD (Electrostatic Discharge).
The SBESD5301N incorporates one pair of ultra- low
capacitance steering diodes plus a TVS diode.
The SBESD5301N may be used to provide ESD protection
up to ±25kV (contact discharge) according to IEC61000-4-2,
and withstand peak pulse current up to 5.5A (8/20µs)
according to IEC61000-4-5.The SBESD5301N is available in
DFN1006-2L package.
DFN1006-2L
APPLICATIONS
Mobile phone
PAD
Notebook
LCD TV
Other electronics equipments
REF.
A
B
C
D
Millimeter
Min.
Max.
0.95
1.05
0.55
0.65
0.2
0.3
0.45
0.55
REF.
E
F
G
Millimeter
Min.
Max.
0.65 TYP.
0.3
0.4
0.00
0.05
FEATURES
Ultra-low clamping voltage
Low leakage current
Small package
MARKING
7*
*
= Date Code
Circuit diagram
PACKAGE INFORMATION
Package
DFN1006-2L
MPQ
5K
Leader Size
7 inch
ABSOLUTE MAXIMUM RATINGS
(T
A
=25°C unless otherwise specified)
Rating
Air contact
IEC 61000-4-2 (ESD)
Contact discharge
Peak pulse power (tp=8/20us)
Peak pulse current (tp=8/20us)
Storage temperature range
Lead temperature
.
http://www.SeCoSGmbH.com/
Any changes of specification will not be informed individually.
Symbol
Value
±25
Unit
kV
±25
P
PK
I
PP
T
J
, T
STG
T
L
82
5.5
125, -55 ~ 150
260
W
A
°
C
°
C
18-Dec-2013 Rev. A
Page 1 of 3
SBESD5301N
Elektronische Bauelemente
82W, 5V
Ultra Low Capacitance
ESD Protection for high-speed interfaces
ELECTRICAL CHARACTERISTICS
(T
A
=25°C unless otherwise specified)
Parameter
Reveres maximum working voltage
Reveres leakage current
Reveres breakdown voltage
Symbol
V
RWM
I
R
V
BR
V
F
Condition
Min.
-
Typ.
-
0.1
8
0.9
18
0.57
-
-
0.4
Max.
5
100
9
1.2
-
-
10
15
0.55
Units
V
nA
V
V
V
V
RWM
=5V
I
T
=1mA
I
T
=10mA
I
PP
=16A, tp=100ns
-
7
0.6
-
-
Forward voltage
Clamping voltage
1
1
V
CL
R
DYN
Dynamic resistance
Clamping Voltage
2
I
PP
=1A, tp=8/20us
V
C
I
PP
=5.5A, tp=8/20us
-
-
-
V
V
pF
Junction capacitance
C
J
f=1MHz, V
R
=0
Note:
1. TLP parameter: Z0 = 50 , tp = 100ns, tr = 2ns, averaging window from 60ns to 80ns. RDYN is calculated from 4A to16A.
2. According to IEC61000-4-5.
RATINGS AND CHARACTERISTICS CURVES
http://www.SeCoSGmbH.com/
Any changes of specification will not be informed individually.
18-Dec-2013 Rev. A
Page 2 of 3
SBESD5301N
Elektronische Bauelemente
82W, 5V
Ultra Low Capacitance
ESD Protection for high-speed interfaces
RATINGS AND CHARACTERISTICS CURVES
http://www.SeCoSGmbH.com/
Any changes of specification will not be informed individually.
18-Dec-2013 Rev. A
Page 3 of 3
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